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1.
One of the most promising areas for the industrial application of atomic layer deposition (ALD) is for gas barrier layers on polymers. In this work, a packaging material system with improved diffusion barrier properties has been developed and studied by applying ALD on flexible polymer based packaging materials. Nanometer scale metal oxide films have been applied to polymer-coated papers and their diffusion barrier properties have been studied by means of water vapor and oxygen transmission rates. The materials for the study were constructed in two stages: the paper was firstly extrusion coated with polymer film, which was then followed by the ALD deposition of oxide layer. The polymers used as extrusion coatings were polypropylene, low and high density polyethylene, polylactide and polyethylene terephthalate. Water vapor transmission rates (WVTRs) were measured according to method SCAN-P 22:68 and oxygen transmission rates (O2TRs) according to a standard ASTM D 3985. According to the results a 10 nm oxide layer already decreased the oxygen transmission by a factor of 10 compared to uncoated material. WVTR with 40 nm ALD layer was better than the level currently required for most common dry flexible packaging applications. When the oxide layer thickness was increased to 100 nm and above, the measured WVTRs were limited by the measurement set up. Using an ALD layer allowed the polymer thickness on flexible packaging materials to be reduced. Once the ALD layer was 40 nm thick, WVTRs and O2TRs were no longer dependent on polymer layer thickness. Thus, nanometer scale ALD oxide layers have shown their feasibility as high quality diffusion barriers on flexible packaging materials.  相似文献   

2.
Thin aluminum oxide coatings have been deposited at a low temperature of 80 °C on various uncoated papers, polymer-coated papers and boards and plain polymer films using the atomic layer deposition (ALD) technique. The work demonstrates that such ALD-grown Al2O3 coatings efficiently enhance the gas-diffusion barrier performance of the studied porous and non-porous materials towards oxygen, water vapor and aromas.  相似文献   

3.
几种食品包装用塑料膜阻透性能比较   总被引:1,自引:1,他引:0  
目的研究不同厚度、不同材质的食品包装用塑料膜透氧量、透湿量的变化情况,为食品包装在阻隔性方面的选材提供依据和指导。方法采用压差法和杯式法分别测试塑料膜的透氧量和透湿量。结果单层塑料膜随厚度的增加,透氧量和透湿量均减小,阻隔性能变好。相同厚度的PE,PET,BOPP,PA这4种单层塑料膜中,PA的透氧量最小,PE的透氧量最大,BOPP的透湿量最小,PA的透湿量最大。复合膜厚度增加,其透氧量、透湿量均减小,但减小幅度逐渐变小。塑塑复合膜外层材料厚度不变时,透氧量、透湿量随总厚度变化不太明显,EVOH塑料复合膜的透氧量值和透湿量值较小,通常在5以下,铝箔塑料复合膜的透氧量值和透湿量值均小于1。结论单层塑料膜PA的氧气阻隔性最好,PE的氧气阻隔性最差,BOPP的水蒸气阻隔性最好,PA的水蒸气阻隔性最差。复合膜中,塑塑复合膜的阻隔性主要取决于外层材料,铝塑复合膜的阻隔性最好,含高阻隔材料EVOH的塑料复合膜的阻隔性比普通塑塑复合膜好,其阻隔性可与铝塑复合膜媲美。  相似文献   

4.
在柔性产业的引领下,柔性超高阻隔膜由于可以使器件免受水汽侵蚀,延长使用寿命,广泛应用于有机发光二极管(OLED)柔性面板、量子点显示、柔性光伏等行业.原子层沉积(ALD)技术是一种原子尺度的薄膜制备技术,沉积的薄膜均匀性好、纯度高、而且厚度精确可控,是超高阻隔膜的理想制备方法.本文总结了ALD的基本原理,技术特点和沉积...  相似文献   

5.
目的基于氧化硅(SiO_x)镀层优异的性能,研究不同厚度的SiO_x层对SiO_x/PET复合薄膜力学性能和阻隔性能的影响,以期得到性能较优的SiO_x/PET复合薄膜。方法以自制的聚对苯二甲酸乙二醇酯(PET)薄膜为基材,采用等离子体增强化学气相沉积法沉积得到SiO_x层厚度分别为40,150,230,320 nm的SiO_x/PET复合薄膜,并进行傅里叶变换红外线光谱分析、力学性能和阻隔性能测试,以及薄膜表观形貌分析。结果沉积SiO_x层后,SiO_x/PET复合薄膜拉伸强度和断裂伸长率随SiO_x层厚度的增大先增大后减小,氧气透过率和水蒸气透过率则出现明显衰减而后逐渐平缓的趋势。SiO_x层厚度达150~230 nm时,复合薄膜的力学性能和阻隔性能表现较优,拉伸强度、断裂伸长率、氧气透过率以及水蒸气透过率分别提高了约25.0%,20.9%,79.3%,77.3%。结论适宜厚度的SiO_x层可以使得SiO_x/PET复合薄膜同时具备较优的力学性能和阻隔性能。  相似文献   

6.
We report the use of scanning tunneling spectroscopy (STS) to investigate one-dimensional quantum confinement effects in lead sulfide (PbS) thin films. Specifically, quantum confinement effects on the band gap of PbS quantum wells were explored by controlling the PbS film thickness and potential barrier height. PbS quantum well structures with a thickness range of 1-20?nm were fabricated by atomic layer deposition (ALD). Two barrier materials were selected based on barrier height: aluminum oxide as a high barrier material and zinc oxide as a low barrier material. Band gap measurements were carried out by STS, and an effective mass theory was developed to compare the experimental results. Our results show that the band gap of PbS thin films increased as the film thickness decreased, and the barrier height increased from 0.45 to 2.19?eV.  相似文献   

7.
徐汾丽  周美丽  陈强 《包装工程》2017,38(17):70-76
目的为柔性高阻隔薄膜的应用提供理论指导。方法综述柔性高阻隔膜的应用现状及存在问题,总结热蒸发、化学气相沉积、原子层沉积等制备柔性高阻隔薄膜的方法、原理、特点及应用,展望高阻隔膜包装材料的发展前景。结果高阻隔薄膜制备工艺趋向于单次制备,采用等离子体辅助原子层沉积技术是制备超高阻隔薄膜的首选,原子层沉积(ALD)和分子层沉积(MLD)结合也是获得超高阻隔薄膜的未来发展方向。结论快速、高效地制备柔性高阻隔薄膜是包装工业的发展趋势。  相似文献   

8.
Transparent permeation barrier layers on flexible polymer substrates This paper reviews different vacuum based technologies for manufacturing transparent permeation barrier layers and layer stacks on flexible polymer substrates. With plasma assisted reactive evaporation, a cost‐efficient, highly productive process for food packaging applications is presented. Reactive dual magnetron sputtering is a technology for the deposition of oxide layers with a very low water vapor and oxygen transmission rate at a reasonable deposition rate. Many groups suggest multilayer stacks for the encapsulation of flexible electronic devices. In this paper, an all‐in‐vacuum inline concept for manufacturing such multilayers is presented. It is based on the combination of reactively sputtered barrier layers with interlayers grown by using a magnetron based PECVD process (Magnetron‐PECVD). Both, process parameters, such as deposition rate and process pressure, and important layer properties, such as morphology and the water vapor and oxygen transmission rate are compared for the different single and multi layer technologies.  相似文献   

9.
通过生物基可降解材料制造阻隔性包装的应用越来越受到人们的关注。然而,现有的技术仍较难同时实现纸基包装材料的高氧气阻隔性和水蒸气阻隔性。本研究以自制透明纸作为基底,采用天然高分子材料(淀粉、瓜尔胶)及环保水性防水剂为涂布层,通过涂布工艺制备了兼具高阻氧和阻水蒸气性能的透明纸基材料。结果表明,不同涂层之间充分发挥各自的阻隔作用,降低了外界水蒸气在纸基材料表面的吸附作用,同时增加了水分子和氧气分子在纸张内部的扩散难度;制得的透明纸基材料氧气透过率最低为2.46 cm3/(m2·day·0.1 MPa),水蒸气透过率仅为107.09 g/(m2·day),相比于未涂布的透明纸分别下降了92%和94%。同时,有防水层的透明纸基材料的纸与纸板表面吸水量(Cobb)值均小于1 g/m2,接触角大于90°,呈现出良好的疏水性和抗水特性。本文的制备工艺简便、制造成本较低、材料性能可控,有望在替塑包装中得到应用。   相似文献   

10.
A new technique, called “plasma defect etching” (PDE), is proposed for studying the continuity of ultra-thin layers. The PDE technique utilizes the extremely high selectivity in the deep reactive ion etching (DRIE) process, thus achieving visualization of the defects in the layer, because etching of substrate happens only through voids and microholes of the layer. The etch profile generally reproduces the non-continuous structure of the layer. This PDE technique was applied for the investigation of thin, sub-nm aluminum oxide films grown on silicon wafers by atomic layer deposition (ALD) technique. Silicon substrate was etched by SF6 at cryogenic temperatures in an inductively coupled plasma (ICP) reactor, exploiting the extremely high ratio of silicon/aluminum oxide etch rates in fluorine plasmas. The surface morphology was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The PDE method shows that in the case of water as an oxidation precursor, separate islands of aluminum oxide form during the five first ALD cycles. On the other hand, the use of ozone precursor helps to oxidize silicon surface and facilitates growth of a uniform layer.  相似文献   

11.
An in situ gas-phase diagnostic for the metal alkylamide compound tetrakis(ethylmethylamido) hafnium (TEMAH), Hf[N(C(2)H(5))(CH(3))](4), was demonstrated. This diagnostic is based on direct absorption measurement of TEMAH vapor using an external cavity quantum cascade laser emitting at 979 cm(-1), coinciding with the most intense TEMAH absorption in the mid-infrared spectral region, and employing 50 kHz amplitude modulation with synchronous detection. Measurements were performed in a single-pass configuration in a research-grade atomic layer deposition (ALD) chamber. To examine the detection limit of this technique for use as a TEMAH delivery monitor, this technique was demonstrated in the absence of any other deposition reactants or products, and to examine the selectivity of this technique in the presence of deposition products that potentially interfere with detection of TEMAH vapor, it was demonstrated during ALD of hafnium oxide using TEMAH and water. This technique successfully detected TEMAH at molecular densities present during simulated industrial ALD conditions. During hafnium oxide ALD using TEMAH and water, absorbance from gas-phase reaction products did not interfere with TEMAH measurements while absorption by reaction products deposited on the optical windows did interfere, although interfering absorption by deposited reaction products corresponded to only ≈4% of the total derived TEMAH density. With short measurement times and appropriate signal averaging, estimated TEMAH minimum detectable densities as low as ≈2 × 10(12) molecules/cm(3) could be obtained. While this technique was demonstrated specifically for TEMAH delivery and hafnium oxide ALD using TEMAH and water, it should be readily applicable to other metal alkylamide compounds and associated metal oxide and nitride deposition chemistries, assuming similar metal alkylamide molar absorptivity and molecular density in the measurement chamber.  相似文献   

12.
Effective top-side thin film encapsulation for organic light-emitting devices (OLEDs) was achieved by deposition of a multi-layer water diffusion barrier stack to protect the device against moisture permeation. The barrier stack was formed by alternative depositions of co-oxide and fluorocarbon (CFx) films. The co-oxide layer was fabricated by magnetron co-sputtering of silicon dioxide (SiO2) and aluminum oxide (Al2O3). While the CFx layer was formed by plasma enhanced chemical vapor deposition. The water vapor transmission rate of the optimized diffusion barrier stack can be down to 10− 6 g/m2/day. The OLEDs encapsulated with the multilayer stack have been shown to have operation lifetime of over 18,000 h which is nearly the same as devices with conventional glass-cover encapsulation.  相似文献   

13.
In this study, the permeability of passivation layers consisting of aluminum oxide (Al2O3) and titanium oxide (TiO2) was examined. The films were deposited on poly(ether sulfone) (PES) substrates via electron cyclotron resonance atomic layer deposition (ECR-ALD) at various deposition temperatures. The optimum plasma power and deposition temperature were investigated through measurements of the refractive index and packing density of the Al2O3 and TiO2 films. A buffer layer/multilayer structure was proposed in this study to improve the passivation barrier performance. A low water vapor transmission rate (WVTR) of approximately 5 x 10(-3) g/m2 x day was achieved with two Al2O3/TiO2 stacks with thicknesses of 40 nm deposited at 80 degrees C. Based on the Arrhenius rate equation, the activation energy of water vapor transmission through different passivation structures was examined. The activation energies of Al2O3, Al2O3/TiO2, and two Al2O3/TiO2 stacks with thicknesses of 40 nm were 51.8, 63.9, and 74.7 kJ/mol, respectively.  相似文献   

14.
目的 研究无铝内衬纸使用不同类型油墨及涂布层数的组合,得到阻隔性能优良的样品,推动无铝内衬纸的生产应用。方法 采用扫描电子显微镜、水蒸气透过率测试仪、透气性测试仪测试内衬纸的表面微观结构、透湿率和透气性,考察对比不同来源内衬原纸、单层多层涂布无铝内衬纸的阻隔性能,并与其他类型内衬纸性能做比对分析。结果 无铝内衬纸在原纸基础上涂布多层油墨,可显著提升产品的阻隔性能。单层涂布透湿率最大降低了59.80%,透气性最大降低了98.37%;三层涂布后透湿率趋于稳定,降幅为79.70%,而随涂布层数的增加,阻气效果提升不明显。结论 纸张涂布多层油墨能获得阻隔性能优良的无铝内衬纸,其阻隔性能与常规直镀内衬纸相近。  相似文献   

15.
Ultra-thin (2-5 nm thick) aluminum oxide layers were grown on non-functionalized individual single walled carbon nanotubes (SWCNT) and their bundles by atomic layer deposition (ALD) technique in order to investigate the mechanism of the coating process. Transmission electron microscopy (TEM) was used to examine the uniformity and conformality of the coatings grown at different temperatures (80 degrees C or 220 degrees C) and with different precursors for oxidation (water and ozone). We found that bundles of SWCNTs were coated continuously, but at the same time, bare individual nanotubes remained uncoated. The successful coating of bundles was explained by the formation of interstitial pores between the individual SWCNTs constituting the bundle, where the precursor molecules can adhere, initiating the layer growth. Thicker alumina layers (20-35 nm thick) were used for the coating of bottom-gated SWCNT-network based field effect transistors (FETs). ALD layers, grown at different conditions, were found to influence the performance of the SWCNT-network FETs: low temperature ALD layers caused the ambipolarity of the channel and pronounced n-type conduction, whereas high temperature ALD processes resulted in hysteresis suppression in the transfer characteristics of the SWCNT transistors and preserved p-type conduction. Fixed charges in the ALD layer have been considered as the main factor influencing the conduction change of the SWCNT network based transistors.  相似文献   

16.
In this paper, a method is presented to create and characterize mechanically robust, free-standing, ultrathin, oxide films with controlled, nanometer-scale thickness using atomic layer deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 ± 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indicates that these ultrathin two-dimensional films have excellent mechanical integrity. The films are also impermeable to standard gases suggesting they are pinhole-free. These continuous ultrathin films are expected to enable new applications in fields such as thin film coatings, membranes, and flexible electronics.  相似文献   

17.
Peng Q  Gong B  Parsons GN 《Nanotechnology》2011,22(15):155601
Uniformly grafting organic reactive molecular species, e.g. -NH?, onto substrates that have three-dimensional complex structures and are chemically inert is challenging. The vapor phase chemical grafting of organic molecules enabled by low temperature metal oxide atomic layer deposition (ALD) is presented as a general and promising solution to functionalize inert matrices with complex morphology, such as nonwoven polypropylene mats, through the controllable self-limited molecular assembly mechanism in a combined ALD and vapor phase chemical grafting process.  相似文献   

18.
Kim WH  Park SJ  Son JY  Kim H 《Nanotechnology》2008,19(4):045302
We fabricated metallic nanostructures directly on Si substrates through a hybrid nanoprocess combining atomic layer deposition (ALD) and a self-assembled anodic aluminum oxide (AAO) nanotemplate. ALD Ru films with Ru(DMPD)(EtCp) as a precursor and O(2) as a reactant exhibited high purity and low resistivity with negligible nucleation delay and low roughness. These good growth characteristics resulted in the excellent conformality for nanometer-scale vias and trenches. Additionally, AAO nanotemplates were fabricated directly on Si and Ti/Si substrates through a multiple anodization process. AAO nanotemplates with various hole sizes (30-100?nm) and aspect ratios (2:1-20:1) were fabricated by controlling the anodizing process parameters. The barrier layers between AAO nanotemplates and Si substrates were completely removed by reactive ion etching (RIE) using BCl(3) plasma. By combining the ALD Ru and the AAO nanotemplate, Ru nanostructures with controllable sizes and shapes were prepared on Si and Ti/Si substrates. The Ru nanowire array devices as a platform for sensor devices exhibited befitting properties of good ohmic contact and high surface/volume ratio.  相似文献   

19.
The corrosion and electrochemical behavior of 3003 aluminum alloy in ethylene glycol–water solution were investigated by electrochemical techniques. It is found that the oxide film formed on aluminum depends on the dissolved oxygen in the solution. In the presence of oxygen, a layer of aluminum oxide film forms on the aluminum surface to protect the substrate from corrosion. In the absence of oxygen, the film formed is mainly aluminum-alcohol film that is less compact and less resistant to corrosion. The aluminum oxide film and aluminum-alcohol film have the different susceptibilities to chloride ion attack for pit initiation. There is a higher pitting susceptibility for aluminum oxide-covered electrode. The increase in temperature decreases the resistance of aluminum electrode to corrosion reaction. However, the resistance to pitting corrosion increases.  相似文献   

20.
A single‐chamber system capable of depositing both organic and inorganic layers by initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) is demonstrated to facilitate the fabrication of organic/inorganic hybrid thin film encapsulation (TFE). The chamber geometry and the process conditions of iCVD and ALD are similar to each other, which enabled the design of the single‐chamber system. Both organic and inorganic films deposited via the single‐chamber system produces films with their properties equivalent to those deposited in separate iCVD and ALD reactors. Alternating the deposition mode between iCVD and ALD produces organic/inorganic multilayers with outstanding barrier properties as well as optical transparency mechanical flexibility.  相似文献   

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