Finite size effect on Ni doped nanocrystalline NixZn1 − xFe2O4 (0.1 ≤ x ≤ 0.5)

Nanocrystalline nickel ferrite with different concentration of Ni and Zn (Ni_xZn_1 − xFe₂O₄ where x = 0.1, 0.3, 0.5) were synthesized using chemical co-precipitation method. The effect of doping ion concentration on physical properties like crystalline phase, crystallite size, particle size, and saturation magnetization are investigated. The X-ray diffraction pattern confirms the synthesis of single crystalline Ni_xZn_1 − xFe₂O₄ nanoparticles. The lattice parameter decreases with increase Ni content resulting in reduction of lattice strain. HRTEM images revealed that the as-prepared nanoparticles were crystalline with particle size distribution in 10-30 nm range. The saturation magnetization show the superparamagnetic nature of sample for x = 0.1 and x = 0.3 whereas for x = 0.5, the material is ferromagnetic. The saturation magnetization value is 23.95 emu/gm for Ni_0.1Zn_0.9Fe₂O₄ sample and it increases with increase in Ni content.     

Optical and electrical properties of heat-resistant Sb-doped Sn1 − xHfxO2 transparent conducting films

To examine variations in the transparent conducting properties after annealing at high temperatures, 300-nm thick Sb-doped Sn_1 − xHf_xO₂ (x = 0.00-0.10) films were deposited onto silica glass substrates by the RF sputtering method and annealed in air up to 1000 °C at 200 °C increments. After annealing, all the Sb-doped SnO₂ films were transparent and electrically conductive, but large cracks, which decreased the electrical conductivity, were generated in several films due to crystallization or the thermal expansion difference between the film and substrate. Only the film deposited at room temperature in an Ar and O₂ mixed atmosphere did not crack after annealing, and its electrical conductivity exceeded 100 S cm^− 1 even after annealing at 1000 °C in air. Hf-doping blue shifted the fundamental absorption edges in the UV region in the Sb-doped Sn_1 − xHf_xO₂ films. Additionally, the optical transmission at 310 nm, T₃₁₀, increased as the Hf concentration increased, whereas the electrical conductivity was inversely proportional to the Hf concentration. On the other hand, thinner films (150-nm thick) with x = 0.00 showed both a high electrical conductivity over 100 S cm^− 1 and a high transparency T₃₁₀ = 65% after high temperature annealing.     

Microstructure and thermoelectric properties of Sn-doped Bi2Te2.7Se0.3 thin films deposited by flash evaporation method

(Bi_1 − xSn_x)₂Te_2.7Se_0.3 thermoelectric thin films with thickness of 800 nm have been deposited on glass substrates by flash evaporation method at 473 K. The structures, morphology of the thin films were analyzed by X-ray diffraction and field emission scanning electron microscopy respectively. Effects of Sn-doping concentration on thermoelectric properties of the annealed thin films were investigated by room-temperature measurement of Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 12.8 μW/cmK² (x = 0.003). From x = 0.004 to 0.01 Sn doping concentration, the Seebeck coefficients are positive and show p-type conduction. The Seebeck coefficient and electrical resistivity gradually decrease with increasing Sn doping concentration.     

Electrical properties of MgAl2-2xZrxMxO4 (M = Co, Ni and x = 0.00-0.20) synthesized by coprecipitation technique using urea

This paper presents the results of a study concerning the structural and electrical properties of MgAl_2-2xZr_xM_xO₄ (x = 0.00-0.20 and M = Co²⁺ and Ni²⁺) prepared by a coprecipitation technique using urea as a precipitating agent. The X-ray diffraction data for the pure and its doped samples are consistent with the single-phase spinel and their crystallite sizes are in the range 7-20 ± 4 nm. The DC resistivity increases from 3.09 × 10⁹ Ω cm to 6.73 × 10⁹ and 8.06 × 10⁹ Ω cm whereas dielectric constant decreases from 5.80 to 5.11 and 4.95 on doping with Zr-Co and Zr-Ni, respectively. The electrical resistivity variations with increase in the dopant contents indicate two types of conduction mechanisms in operation. Several parameters such as, hopping energy (W), metal-semiconductor transition temperature (T_MS) and Debye temperature (θ_D) have also been determined. The increase in DC resistivity and decrease in dielectric constant suggest that the synthesized materials can be considered for application as an insulating and structural material in fusion reactors.     

Si1 − xGex metal-oxide-semiconductor capacitors with HfTaOx gate dielectrics

Interfacial reactions and electrical properties of RF sputter deposited HfTaO_x high-k gate dielectric films on Si_1 − xGe_x (x = 19%) are investigated. X-ray photoelectron spectroscopic analyses indicate an interfacial layer containing GeO_x, Hf silicate, SiO_x (layer of Hf-Si-Ge-O) formation during deposition of HfTaO_x. No evidence of Ta-silicate or Ta incorporation was found at the interface. The crystallization temperature of HfTaO_x film is found to increase significantly after annealing beyond 500 °C (for 5 min) along with the incorporation of Ta. HfTaO_x films (with 18% Ta) remain amorphous up to about 500 °C anneal. Electrical characterization of post deposition annealed (in oxygen at 600 °C) samples showed; capacitance equivalent thickness of ~ 4.3-5.7 nm, hysteresis of 0.5-0.8 V, and interface state density = 1.2-3.8 × 10¹² cm^− 2 eV^− 1. The valence and conduction band offsets were determined from X-ray photoelectron spectroscopy spectra after careful analyses of the experimental data and removal of binding energy shift induced by differential charging phenomena occurring during X-ray photoelectron spectroscopic measurements. The valence and conduction band offsets were found to be 2.45 ± 0.05 and 2.31 ± 0.05 eV, respectively, and a band gap of 5.8 ± 05 eV was found for annealed samples.     

Towards an electronic model for CuIn1 − xGaxSe2 solar cells

We model some aspects of highly efficient CuIn_1 − xGa_xSe₂ solar cells with x ≈ 0.3 as well as wide band gap cells with x = 1 and ask for the dominant recombination mechanism which limits the V_oc of these devices. For CuIn_1 − xGa_xSe₂ solar cells with x ≈ 0.3, interface recombination combined with Fermi-level pinning is a possible but unlikely recombination mechanism. We argue that these cells are rather limited by recombination in the quasi-neutral region (QNR) including the back contact. Using the expression for the QNR recombination rate we calculate the derivative of the collection function in the absorber at the space charge region edge which is in reasonable agreement with the experiment. It turns out that the diffusion length must approximate the absorber thickness. Based on this information, we draw a band diagram for a CuIn_1 − xGa_xSe₂ solar cells with x ≈ 0.3 and plot the simulated collection function. For cells with x = 1 (Cu-poor CuGaSe₂), the experimental activation energy of the recombination rate mostly equals the absorber band gap, i.e. E_a ≈ E_g,a = 1.67 eV. As the experimental interface band gap is smaller than E_a, interface recombination must be ruled out. Thus, the carrier lifetime in the Cu-poor CuGaSe₂ absorber should be so small that bulk recombination is more efficient than interface recombination. From this consideration, we postulate an electron lifetime value of 10⁻¹² s for CuGaSe₂.     

Ultraviolet emission efficiencies of AlxGa1 − xN films pseudomorphically grown on AlyGa1 − yN template (x < y) with various Al-content combinations

The effect of alloying and expitaxial mismatch strain on the surface ultraviolet (UV) emission efficiencies of Al_xGa_1 − xN films, pseudomorphically grown on both c- and m-plane Al_yGa_1 − yN templates (x < y) for various Al-content combinations, has been investigated under the framework of k·p perturbation theory. The results indicate that the film/template Al-content combination with y > − 0.03 + 1.79x−0.06x² (0 < x < y < 1) for the c-plane case and the film/template with all y:x (0 < x < y < 1) combinations for the m-plane case, are particularly suitable for obtaining efficient UV light emissions. In the latter case, it's also ideal for fabricating edge-emitting UV devices with predominant transverse electric mode. Furthermore, polarized emissions with high polarization degree can be achieved by properly tuning the y:x ratio for certain x.     

Ohmic contacts and n-type doping on TixCr2 − xO3 films and the temperature dependence of their transport properties

A procedure to dope n-type Cr_2 − xTi_xO₃ thin films is proposed. Besides doping the material, at the same time the method forms ohmic contacts on Ti_xCr_2 − xO₃ films. It consists on the deposition of 10 nm Ti and 50 nm Au, followed by thermal annealing at 1000 °C for 20 min in N₂ atmosphere. Ohmic contacts were formed on three samples with different composition: x = 0.17, 0.41 and 1.07 in a van der Pauw geometry for Hall effect measurements. These measurements are done between 35 K and 373 K. All samples showed n-type nature, with a charge carrier density (n) on the order of 10²⁰ cm^− 3, decreasing as x increased. As a function of temperature, n shows a minimum around 150 K, while the mobilities have an almost constant value of 11, 28 and 7 cm²V^− 1 s^− 1 for x = 0.17, 0.41 and 1.07, respectively.     

Effect of Cr doping on the optical-electrical property of CuAlO2 thin films derived by chemical solution deposition

Cr-doped CuAlO₂ thin films were deposited on sapphire substrates by chemical solution deposition. The polycrystalline phase structure of CuAl_1 − xCr_xO₂ (x = 0-0.015) thin films was confirmed using an X-ray diffractometer in grazing incidence mode. All specimens are phase-pure. Optical-electrical property measurements show that with increasing Cr amount, electrical resistivity decreases from x = 0 to 0.01, followed by an increase of x = 0.015. This implies that two mechanisms affecting conductivity coexist and compete with each other. The predominance of the mechanisms changes with the increase in the Cr content. The detailed investigation on the transmittance in the ultraviolet region suggests that Cr doping can modify the structure of the top of valence band (VB) because Cr 3d states contribute to VB. Finally, 1% Cr doping can realize the best optimization of optical-electrical property with respect to transparent conducting oxide thin films.     

Synthesis, structure and magnetic properties of Sr2Fe1−xGaxMoO6 (0 ≤ x ≤ 0.6) double perovskites

Polycrystalline Sr₂Fe_1−xGa_xMoO₆ (0 ≤ x ≤ 0.6) materials have been synthesized by solid state reaction method and studied by neutron powder diffraction (NPD) and magnetization measurements. Rietveld analysis of the temperature dependent NPD data shows that the compounds crystallize in the tetragonal symmetry in the space group I4/m. The anti-site (AS) defects concentration increases with Ga doping, giving rise to highly B-site disordered materials. Ga doping at the Fe-site decreases the cell volume. The evolution of bond lengths and the cation oxidation states was determined from the Rietveld refinement data. The saturation magnetization and Curie temperature decreased with the increasing Ga content in the samples. Low temperature neutron diffraction data analysis and magnetization measurements confirm the magnetic interaction as ferrimagnetic in the sample.     

Electrical transport and structural study of CuCr1 − xMgxO2 delafossite thin films grown by pulsed laser deposition

The growth and properties of delafossites CuCr_1 − xMg_xO₂ thin films are examined. These films are grown by pulsed laser deposition. As a class of materials delafossites have received recent interest since some members show p-type behavior. While not considered true wide-bandgap materials due to a narrow indirect bandgap that fails to adsorb light due to a forbidden same parity transition, optical transparencies greater than 40% in the visible can be observed. In order to be useful for transparent device applications, CuCr_1 − xMg_xO₂ films are needed with low resistivity and high optical transparency. Epitaxial films of CuCr_1 − xMg_xO₂ were grown on c-sapphire, examining the effects of oxygen pressure and growth temperature on film properties. Films were realized with resistivity of ~ 0.02 Ω-cm and optical transparency of 40% in the visible. The formation of a problematic secondary minority spinel phase of (Cu,Mg)Cr₂O₄ is discussed. While conductivity increases substantially with Mg doping, the incidence of the spinel phase increases as well.     

Electrical properties of lead-free thick film NTC thermistors based on perovskite-type BaCoxCo2xBi1 − 3xO3

Lead-free thick film negative temperature coefficient (NTC) thermistors based on perovskite-type BaCo^II_xCo^III_2xBi_1 − 3xO₃ (x ≤ 0.1) were prepared by mature screen-printing technology. The microstructures of the thick films sintered at 720 °C were examined by X-ray diffraction and scanning electron microscopy. The electrical properties were analyzed by measuring the resistance-temperature characteristics. For the BaBiO₃ thick films, the room-temperature resistivity is 0.22 MΩ cm, while the room-temperature resistivity is sharply decreased to about 3 Ω cm by replacing of Bi with a small amount of Co. For compositions 0.02 ≤ x ≤ 0.1, the values of room-temperature resistivity (ρ₂₃), thermistor constant (B_25/85) and activation energy are in the range of 1.995-2.975 Ω cm, 1140-1234 K and 0.102-0.111 eV, respectively.     

Pulsed laser deposition of (MoO3)1 − x(V2O5)x thin films: Preparation, characterization and gasochromic studies

In this study we demonstrate a new composite oxide thin films of (MoO₃)_1 − x(V₂O₅)_x, x = 0, 0.01, 0.03, and 0.05, fabricated by pulsed laser deposition (PLD). The performance of platinum (Pt) catalyst activated hydrogen gas sensor with modified (MoO₃)_1 − x(V₂O₅)_x thin films were investigated. The thickness of the (MoO₃)_1 − x(V₂O₅)_x thin film is about 600-650 nm and its surface has a uniform morphology. Our results show that the gasochromic sensors prepared by (MoO₃)_0.99(V₂O₅)_0.01 thin film exhibited excellent hydrogen sensibility. The response and recovery time are in the range of 9-15 min for coloration and bleaching at room temperature under H₂ atmosphere. The results also show that (MoO₃)_1 − x(V₂O₅)_x/Pt (x = 0.01, 0.03, 0.05) thin films perform better gasochromic capability than the pristine MoO₃/Pt sample.     

Properties of the PLZTN x/54/46 (0.4 ≤ x ≤ 1.4) ceramic system

Even though the PZT ceramic system has been thoroughly studied and modified with different additives, no numerous reports have been published focusing on the PZT double ‘soft’ modification with La³⁺ and Nb⁵⁺ (PLZTN). In this paper, we explore the structural, morphological, dielectric, ferroelectric and piezoelectric properties of the PLZTN system for different doping levels (x_La3+ = x_Nb5+ = 0.4, 0.6, 0.8, 1.0 and 1.4 at.%) synthesized by conventional powders reaction. The temperature dependence of the piezoelectric response of poled ceramic disks is also analyzed and, according to its overall features, an optimum modification is proposed in order to develop PZT-based sensors for several applications.     

Negative thermal expansion and electrical properties of Mn3(Cu0.6NbxGe0.4 − x)N (x = 0.05-0.25) compounds

Bulk materials with the general formula of Mn₃(Cu_0.6Nb_xGe_0.4 − x)N (x = 0.05, 0.1, 0.15, 0.2, 0.25), Mn₃(Cu_0.6Ge_0.4)N and Mn₃(Cu_0.7Ge_0.3)N were fabricated by mechanical ball milling and solid state sintering. Their thermal expansion coefficients and electrical conductivities were investigated in the temperature range of 80-300 K. It is found that the temperature interval of negative temperature expansion behavior is about 95 K in the samples of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N and Mn₃(Cu_0.6 Nb_0.2Ge_0.2)N, which is twice as large as that of Mn₃(Cu_0.7Ge_0.3)N. The negative thermal expansion of Mn₃(Cu_0.6Nb_0.15Ge_0.25)N can reach to − 19.5 × 10⁻⁶ K^− 1 in the temperature range of 165 to 210 K. The electrical conductivity of this series materials is in a level of about 2.5 × 10⁶ (Ω m)^− 1.     

Characterization of Zn1 − xMgxO transparent conducting thin films fabricated by multi-cathode RF-magnetron sputtering

Transparent conducting thin films of Al-doped and Ga-doped Zn_1 − xMg_xO with arbitrary Mg content x were deposited on glass substrates by simultaneous RF-magnetron sputtering of doped ZnO and MgO targets, and their fundamental properties were characterized. MgO phase separation in Zn_1 − xMg_xO films was not detected by X-ray diffraction. The Zn_1 − xMg_xO films show high optical transparency in the visible region. Although the carrier density of the Zn_1 − xMg_xO films decreased with increasing x, the Zn_1 − xMg_xO films showed good electrical conductivity; electrical resistivity as low as 8 × 10^− 4 Ω ·cm was achieved for the Zn_0.9Mg_0.1O:Ga thin film.     

Optical and electrical properties of vapour phase grown Zn1 − xCrxTe crystals

The optical and electrical properties of vapour phase grown crystals of diluted magnetic semiconductor Zn_1 − xCr_xTe were investigated for 0 ≤ x ≤ 0.005. The diffuse reflectance spectra exhibited an increase in the fundamental absorption edge (E₀) with composition x and were also dominated by a broad absorption band around 5200 cm^− 1 arising from ⁵T₂ → ⁵E transition. The ⁵T₂ and ⁵E levels originate from the crystal field splitting of the ⁵D free ion in the ground state. The electrical resistivity measurements revealed semiconducting behaviour of the samples with p-type conductivity in the temperature range of 200-450 K.     

Influence of lithium doping on the structural and electrical characteristics of ZnO thin films

Thin films of undoped and lithium-doped Zinc oxide, (Zn_1 − xLi_x)O; x = 0, 0.05, 0.10 and 0.20 were prepared by sol-gel method using spin-coating technique on silicon substrates [(111)Pt/Ti/SiO₂/Si)]. The influence of lithium doping on the structural, electrical and microstructural characteristics have been investigated by means of X-ray diffraction, leakage current, piezoelectric measurements and scanning electron microscopy. The resistivity of the ZnO film is found to increase markedly with low levels (x ≤ 0.05) of lithium doping thereby enhancing their piezoelectric applications. The transverse piezoelectric coefficient, e₃₁^? has been determined for the thin films having the composition (Zn_0.95Li_0.05)O, to study their suitability for piezoelectric applications.     

Low temperature formation of Si1 − x − yGexSny-on-insulator structures by using solid-phase mixing of Ge1 − zSnz/Si-on-insulator substrates

We proposed the low temperature formation technique of strain-relaxed Si_{1 − x − y}Ge_xSn_y-on-insulator (SGTOI) structures. We found that the solid-phase reaction and the formation of single and uniform Si_{1 − x − y}Ge_xSn_y layer on an insulator after annealing SiO₂/Ge_1 − zSn_z/SOI structures even at a temperature as low as 400 °C. We characterized the crystalline structure of SGTOI, and investigated the effects of annealing, Sn incorporation, and a SiO₂ cap layer on the solid-phase reaction between Ge_1 − zSn_z and SOI layers. The solid-phase reaction is enhanced with a higher Sn content and a thicker SiO₂ cap layer, and then Si_{1 − x − y}Ge_xSn_y layers are more rapidly formed. The SGTOI layer exhibits very low mosaicity and have good crystallinity.     

Itinerant ferromagnetism to insulating spin glass in SrRu1−xCuxO3 (0 ≤ x ≤ 0.3)

The ferromagnetic metallic oxide, SrRuO₃ (T_C ∼ 165 K) undergoes structural, magnetic and metal-insulator transitions upon substitution of Cu at the Ru-site. For x = 0.2 in SrRu_1−xCu_xO₃, the structure becomes a tetragonal with the space group I4/mcm and there is a signature of both ferromagnetic (T_C = 65 K) and antiferromagnetic (T_N = 32 K) ordering due to possible magnetic phase separation. The antiferromagnetism arises due to short range ordering of Cu- and Ru-moments. Jahn-Teller distortion of (Ru,Cu)-O₆ octahedra indicates that the copper ions are in 2+ oxidation state with ⁶t2g³eg electronic configuration. For x ≥ 0.1, narrowing of Ru-4d bandwidth by the substitution of Cu ions results in semiconducting behavior. For x = 0.3, the ac and dc susceptibility measurements indicate a spin glass behavior. The origin of spin glass behavior has been attributed to competing ferromagnetic and antiferromagnetic interactions.