基于压力应变的放大电路实验

基于压力传感器的高阻抗小信号输出,分别通过单个运算放大器差分电路、三个运算放大器构成的仪用放大电路以及集成仪用放大电路来放大,应用零点与增益调整电路来实现重量与电压的一一对称,通过数字万用表的电压值来表示重量。该实验具有趣味性、实用性和不确定性有利于学生发现问题、分析问题、解决问题。     

基于GF（2^n）的ECC协处理器芯片设计

文章讨论了定义在Galois Field(GF)2^n有限域上椭圆曲线密码体制(ECC)协处理器芯片的设计。首先在详细分析基于GF(2^n)ECC算法的基础上提取了最基本和关键的运算，并提出了通过协处理器来完成关键运算步骤，主处理器完成其它运算的ECC加／解密实现方案。其次，进行了加密协处理器体系结构设计，在综合考虑面积、速度、功耗的基础上选择了全串行方案来实现GF(2^n)域上的乘和加运算。然后，讨论了加密协处理器芯片的电路设计和仿真、验证问题。最后讨论了芯片的物理设计并给出了样片的测试结果。     

A novel dual p-/p+ poly gate CMOS VLSItechnology

A CMOS VLSI technology using p^- and p⁺ poly gates for NMOS and PMOS devices is presented. Due to the midgap work function of the p^- poly gate, the NMOS native threshold voltage is 0.7 V and, therefore, no additional threshold adjust implantation is required. The NMOS transistor is a surface-channel device with improved field-effect mobility and lower body effect due to the reduction in the channel doping concentration. In addition, the p ^- poly gate is shown to be compatible with p⁺ poly-gated surface-channel PMOS devices     

Compound current conveyor (CCII+ and CCII-)

A CMOS current conveyor configurable as CCII⁺ and/or CCII^- is proposed. The circuit has the advantages of providing two symmetrical outputs, presenting a low input resistance and giving a high output to input resistance ratio. An input resistance of 28 Ω with a zero at 6 MHz in a 0.5 μm implementation with a supply voltage of 3.3 V have been obtained     

A new concept of p-(n-)/p-(n ) thin-film epitaxial silicon wafers for MOS ULSI's that ensuresexcellent gate oxide integrity

A new concept of epitaxial silicon (Si) wafers (NC epi) in which p ^-(n^-) thin-film layers are grown on p^-(n^-) Czochralski (CZ)-Si substrates (substrate resistivity: approximately 10 Ω cm) is proposed for metal oxide semiconductor (MOS) ultra large-scale integrated circuits (ULSI's) as a starting material. A thickness of 0.3-1 μm for the epitaxial layer (p ^-/p^- structure) is shown to be sufficient for improving the gate oxide integrity for MOS-ULSI's. The epitaxial layer grown on Si substrate greatly reduces weak spots in the gate oxide layer by covering microdefects in the CZ-Si represented by the crystal originated particle (COP). The p^-/p^$thin-film epitaxial structure results in very controlled resistivity for the electrically active region in the device, which in turn results in a lower growth cost and higher feasibility for use in current ULSI's. The features of NC epi in combination with proximity gettering is presented. An application of NC epi in shallow-trench isolation processes is discussed, considering the retrograde-type well-tub. The amenability of epitaxial wafers to wafer enlargement (over 300 mm) is discussed to eliminate the bad effects of COP     

Effect of electron cyclotron resonance H+,Ne+, Ar+, and Xe+ plasma precleaning ontitanium silicide formation

A vacuum integrated cluster tool process incorporating electron cyclotron resonance plasma cleaning, Ti sputter deposition, and rapid thermal annealing in N₂ is used to form a TiN_x<1/TiSi_y bilayer on (100) Si where the film composition is controlled by the preclean chemistry. Chemical cleaning with nominal 10 eV H⁺ completely removes native Si oxide resulting in a hydrogen terminated surface that promotes silicidation compared to one cleaned with buffered-oxide-etching (BOE). If the native oxide is only partially reduced, viz., SiO_x<2 surface, for example by shortening the H⁺ exposure time, then silicidation is largely inhibited and a thicker nitride layer is formed. Sputter cleaning with 50 to 250 eV Ar⁺ results in a bilayer that is roughly equivalent to that formed with BOE, whereas 50 to 150 eV Xe⁺ bombardment favors nitridation. Precleaning with >150 eV Ne⁺ promotes silicidation, thereby minimizing nitride thickness. The effects of precleaning are significant as the activation energy for TiSi_y formation is reduced from 1.8 eV characteristic of a BOE cleaned surface to 1.2 eV on Si etched with 250 eV Ne⁺. Mechanistically, the silicide kinetics are shown to be inhibited by the presence of a thin amorphous layer that is formed only when cleaning Si with Ar⁺ and Xe⁺ with the effect that both knock-on oxygen atoms and implanted noble gas atoms trapped within the amorphous layer retard the requisite solid-phase epitaxial regrowth kinetics. Recrystallizing the amorphous Si surface prior to metallization appears to restore the near-normal silicide kinetics that is characteristic of Ne⁺ cleaning     

Characteristics of siliconn+-n--n+ diode with sub-micrometer n- region

In this paper, the I-V characteristics of silicon n⁺-n ^--n⁺ diode are investigated as a parameter of the length of the n^- region. This diode with shorter n^- region than 1 μm has the ohmic characteristics until reaching high electric field in spite of the existence of numerous space-charges in the n^- region, for the first time in this report. This conductance of the diode is inversely proportional to the third power of the length of the n^- region. The experimental results are in good agreement with an analytical calculation including the diffusion term of carriers injected from the n+ regions to the n^- region. However, the diode with longer n^- region than 2 μm shows the space-charge-limited conduction which is the same as earlier reports     

DOCSISTM cable modem technology

An overview of the cable modem interface standard is presented. This standard is the foundation for high-speed access to content on the Internet being offend by North American cable operators. It also facilitates retail sales of modems and integration into computers, is being adopted by international operators, and provides a path for convergence of video, data, and voice services on a broadband cable system. The details of the protocol stack and evolution of the standard are discussed     

Er3+/Yb3+双掺光纤放大器理论模型

本文在分析一些文献的基础上,仿照掺Er3+光纤放大器的理论模型,尝试建立了一个Er3+/Yb3+双掺光纤放大器的理论模型。利用本模型,可以模拟双掺光纤中信号、泵浦及放大的自发辐射(ASE)的变化情形,并得到一些有意义的数值结果。     

BF2^＋注入对PMOS晶体管开启电压的影响

文章研究了BF2^ 注入对PMOS晶体管开启电压的影响,试验发现,在我们的工艺条件下,BF2^ 注入能量是影响PMOS管开启电压的主要因素,能量高于67．5kev的BF2^ 注入可导致开启电压正漂,而退火对开启电压正漂没有影响,F离子也没有促进B穿透。     

Infrared cross-section measurements for crystals doped withEr3+, Tm3+, and Ho3+

The absorption and emission cross sections of the transition between the ground spin-orbit multiplet and the lowest excited multiplet were measured for Er³⁺, Tm³⁺, and Ho³⁺ ions in a variety of crystalline hosts. The materials that were investigated include LiYF₄, BaY₂F₈, Y ₃Al₅O₁₂, LaF₃, KCaF₃ , YAlO₃, and La₂Be₂O₅. The absolute magnitudes of the emission cross sections were determined from the absorption spectra, with the aid of the principle of reciprocity. The calculated radiative emission lifetimes derived from these measured cross sections agree well with the measured emission decay times for most materials. The potential use of these rare-earth-doped materials in pulsed laser applications requires that the ground state exhibit adequate splitting to minimize the detrimental effects of the ground state thermal population, and also that the emission cross section be sufficiently large to permit efficient extraction energy. The systems based on Ho³⁺ in the eightfold coordinated sites of LiYF₄, BaY₂F₈, and Y₃Al₅O₁₂ appear to be the most promising     

偏振光谱法观察Na_2A~1∑_u~+～b~3Ⅱ_u微扰能级的超精细结构

在分子光谱和量子化学领域中，Na_2分子的结构和光谱的重要性是众所周知的。对于Na_2单重态的激光光谱研究已经得到了大量的结果。相比之下，Na_2三重态的研究则困难得多，因为从其基态（？）到三重态的跃迁是偶极禁戒的。尽管如此，人们还是找到了直接研究三重态的途径，这就是通过（？）微扰能级观察三重态。     

Al3+/Eu2+共掺杂高硅氧玻璃的荧光特性

由纳米多孔玻璃制备了Al3+/Eu2+共掺杂的高硅氧玻璃,并研究了在纳米多孔玻璃基质中共掺杂Al3+离子对Eu2+离子450 nm处蓝色荧光强度和荧光峰位的影响。结果表明,共掺杂Al3+离子可分散多孔玻璃中丛聚的Eu2+离子,加之Al2O3较低的声子能量,使Eu2+离子的蓝色荧光发射显著增强;并且由于共掺杂的Al3+降低了Eu2+离子5d轨道劈裂幅度,随着Al3+离子含量的增加,Eu2+离子荧光峰蓝移。     

Diode-array pumping of Er3+/Yb3+ Co-dopedfiber lasers and amplifiers

Single-mode double-clad Er³⁺/Yb³⁺ co-doped fibers are shown to be suitable for diode array pumping at around 960 nm. A fiber laser with 96-W output power at 1.53 μm and a power amplifier exhibiting a small signal gain of 24 dB and a saturated output power of +17 dBm are reported     

Wavelength and polarization insensitive optical splittersfabricated in K+/Na+ ion-exchanged glass

Guided wave one-to-two- and one-to-four-way splitters designed for operation at wavelengths in the region of 850 nm fabricated in K⁺ /Na⁺ ion-exchanged glass are discussed. The devices have been characterized, and the split ratio has been found to be wavelength and polarization insensitive over a bandwidth exceeding 200 nm     

Er3+-Yb3+ and Er3+ doped fiberlasers

Single-mode fiber lasers operating at ~1.57 μm are described. Output powers of >2 mW are reported for laser diode pumped operation. Direct comparison is made between fiber lasers using sensitized erbium (Er³⁺ and Yb³⁺) and erbium on its own. The performance of Er³⁺-Yb³⁺ fiber lasers is analyzed in more detail as a function of fiber length. Both CW and Q-switched operations are studied and the results obtained demonstrate that practical sources at 1.5 μm are available from diode pumped Er³⁺ -Yb³⁺ systems     

Ag纳米颗粒对Er3+/Tm3+/Yb3+共掺铋锗酸盐玻璃上转换发光特性的影响

采用传统熔融淬冷法制备了系列Er³⁺/Tm 3+/Yb³⁺共掺复合Ag纳米颗粒的铋锗酸盐玻璃样品。从吸收光谱中 确定了Ag纳米颗粒表面等离子体共振(SPR)峰位于545nm附近;透射 电镜(TEM)图像中观察到均匀分布的Ag纳米颗粒,尺寸 约为6～18nm。研究了纳米Ag含量对Er3＋/Tm3＋ 共掺复合Ag纳米颗粒铋锗酸盐玻璃上转换发光特性的影响,结果表 明,Tm³⁺离子472nm处的上转换蓝光、Er³⁺离子525nm处的上转换绿光、543nm处的上转换 绿光和661nm处的上转换红光发光强度在AgCl含量的质量百分数为 1%时达到最大值,与未掺杂AgCl的基质玻璃相比,分别提高了约3.2、3.8、5.4倍。     

直流辉光放电HgX(X=Cl,Br,I)B~2∑~+→X~2∑~+发射光谱的研究

蓝绿色激光由于在水下通讯等方面的应用近年来颇受重视,溴化汞激光就是其中的一种,连同氯化汞、碘化汞激光,统称为HgX(X=Cl,Br,Il)激光,其波长在可见波段一定范围内可调(HgCl:552～559nm,HgBr:495～505nm,HgI:443～445nm).激光跃迁B~2∑~+→X~2∑~+的上能态激发可由HgX_2蒸气在紫外光或快放电作用下分解实现:HgX_2→HgX_2(b~1∑_u~+)→HgX(B~2∑~+)+X(~2P).用后一种方式可制成小型、封闭、长寿命器件,但至今只能得到短脉冲(几+ns)输出.本文目的是通过研     

磷酸盐玻璃中稀土离子Ce~(3 )、Tb~(3 )、Er~(3 )和Tm~(3 )的能量转移和敏化过程的研究

本文报道了磷酸盐玻璃中Tb~(3 )和Ce~(3 )的浓度猝灭效应。在KrF激光(248毫微米,10毫微秒)激发下,测出磷酸盐玻璃中不同浓度Ce~(3 )或Tb~(3 )离子的荧光寿命。着重讨论了磷酸盐玻璃中Ce~(3 )→Tb~(3 )、Er~(3 )和Tm~(3 )的能量转移和敏化过程。