X 波段高功率带状注速调管电子枪的研制

介绍了为新型高功率速调管研制的能产生矩形截面束流的带状注电子枪,其设计工作电压300kV,工作电流330A,导流系数约2.0μp,矩形柱面阴极100mm×40mm,经一维压缩形成的束流截面尺寸为100mm×8mm,电子注的层流性较好。按照设计值制成了带状注电子枪密封管并对其性能进行了测试,初步的实验结果表明电子枪的电性能指标达到了设计要求。     

D波段行波管电子光学系统设计

提出一种用于D波段行波管的电子光学系统设计方案,包括电子枪和永磁聚焦系统,并进行了验证。电子枪采用经典皮尔斯电子枪结构,阴极发射面的外层设置阴极套壳,抑制阴极边缘杂散发射;采用圆柱形控制极替代锥形控制极,同时在聚焦极加负偏压,调节电子注的压缩状态。所设计电子枪工作电压为19 kV,提供电子注电流57 mA,注腰半径为0.068 mm,射程为14.9 mm。为在半径0.15 mm的电子通道中稳定地聚焦和传输电子注,永磁聚焦系统采用周期永磁聚焦系统。峰值磁场为布里渊磁场的2.9倍,增加了电子注刚性。模拟结果显示,传输的电子注最大波动半径小于0.1 mm。按所设计的电子光学系统加工组装了试验流通短管,测试结果显示电子注电流为49.83 mA,收集极电流为49.6 mA,对应电子注流通率达到99.5%,实现了设计目标。     

光学材料

福建福晶科技有限公司名称:胶合晶体尺寸:2mm×2mm×4mm用途:中、低功率绿光激光器。名称:胶合晶体尺寸:1mm×1mm×4mm用途:中、低功率绿光激光器名称:3%Nd:YVO4激光晶体尺寸:3mm×3mm×1mm用途:中、低功率绿光激光器。名称:1.1%Nd:YAG激光晶体尺寸:3mm×2.5mm用途:红光激光器名称:KTP倍频晶体尺寸:2mm×2mm×5mm用途:中、低功率绿光激光器。名称:LBO倍频晶体尺寸:2mm×2mm×10mm用途:蓝光激光器名称:BIBO倍频晶体尺寸:2mm×2mm×5mm用途:蓝光激光器联系方式:电话:+86-591-3791703(83710533)传真:+86-591-83711593名称:非线性晶体KT…     

W波段带状注速调管电子光学系统的研究进展

带状注速调管以其在毫米波段可获得高功率和高增益输出,以及小型化、紧凑型、平面微加工成形等的技术优势而备受国际前沿领域广泛关注。本文重点给出了正在开展的W波段带状注速调管的研究工作,通过采用均匀场聚焦的带状电子注的方式,研制出了椭圆截面带状电子注成形与传输的束流样管。通过实验测试获得的电子枪压缩和成形的带状电子注截面为10 mm×0.7 mm,且在电子注电压为20~82 kV,电流0.5~4.27 A时,长度为100 mm的漂移通道内电子注传输的直流通过率达到98%以上,从而验证了采用均匀场传输带状注的方案是完全可行的。     

新型SMD封装SOT-223

<正> SOT-223分立半导体器件封装方式是飞利浦新近推出的一种表面安装用封装形式。 SOT-223尺寸为6.5mm×3.5mm×1.7mm,外形见图。该封装可容纳最大2.5mm     

带状电子注聚焦系统设计

通过理论分析、数值模拟和实验研究了PCM 结构聚焦椭圆带状电子注的可行性。利用三维PIC 粒子模拟软 件模拟了椭圆带状电子注在PCM 结构行程的周期磁场中的传输过程,结果显示：截面为10x0.4 mm2 的椭圆带状电子 注在12x0.8 mm2 的矩形通道中稳定长距离传输120mm 无截获。对PCM 聚焦结构的磁场进行了测试,测试结果与数 值模拟结果相符。实验并研究了该PCM 聚焦系统约束带状电子注的能力,测试用速调管的设计电压为75kV,在56.8kV 时的直流通过率达到52.1%,并随着工作电压的升高呈上升趋势。     

一种 C 频段高集成多功能综合母板设计

介绍了一种 64 通道的 C 频段高集成多功能综合母板的设计方案和关键技术,该综合母板应用于有源相控阵雷达天线阵面前端模拟子阵。 利用多层印制板压合技术,在天线口径内将电源模块、波控模块和片式 T / R 组件集成在子阵综合母板上。 对各功能网络性能进行了仿真设计、电磁兼容性设计等,最终完成了综合母板设计。 所介绍的 64 通道 C 频段综合母板尺寸为 228 mm×308 mm×4. 8 mm,实测无源射频网络通道幅相一致性优于±0. 1 dB、±1°,有源接收链路通道幅相一致性优于±1. 4 dB、±5°。 该综合母板通过积木化拼接可实现雷达阵面规模二维扩展,适用于多种布局方案,避免了低效重复设计。     

光学材料

福建福晶科技有限公司名称:胶合晶体尺寸:2mm×2mm×4mm用途:中、低功率绿光激光器名称:胶合晶体尺寸:1mm×1mm×4mm用途:中、低功率绿光激光器名称:3%Nd:YVO4激光晶体尺寸:3mm×3mm×1mm用途:中、低功率绿光激光器名称:1.1%Nd:YAG激光晶体尺寸:3mm×2.5mm用途:红光激光器青岛海泰镀膜公司名称:激光晶体镀膜(Nd:YAG,YVO4)(各种高反膜)用途:激光器名称:非线性晶体镀膜(BBO,KTP)(各种高反膜)用途:激光器名称:偏振片技术指标:各种波长,Tp:Ts>500:1用途:激光器名称:PBSCube技术指标:各种波长,Tp:Ts>1000:1用途:激光与显示名称:全固…     

二维光束整形系统设计与仿真

针对高功率板条激光波前矫正的需要,基于ZEMAX软件对二维光束扩束整形系统进行设计和仿真。系统将初始尺寸为2.5 mm×28 mm,发散角为7 mrad×2 mrad矩形光束扩束整形为尺寸为40 mm×40.2 mm,发散角为0.54 mrad×1.3 mrad的方形光束。光束整形方向输出光学传递函数接近衍射极限,光束整形方向视场10 mrad时,两方向引入波像差之和为0.0186 λ,P-V值小于0.1 λ。     

微棱镜与双包层光纤侧面耦合效率的实验研究

对微棱镜与双包层光纤侧面耦合技术进行了研究。用光学胶把尺寸为1mm×1mm×1mm直角棱镜的直角面胶合在尺寸为330μm×170μm的内包层侧平面上,激光束以一定的角度从微棱镜的另一直角面入射并通过它耦合进入双包层光纤的内包层,实验测得耦合效率为86%。该方法可用于双包层光纤的侧面抽运。     

A novel Smith-Purcell free electron laser

An experiment on a novel Smith–Purcell free electron laser (FEL) is described in this paper. The FEL is driven by a relativistic sheet electron beam of middle energy. The high frequency system of the device is a quasi-optical resonator composed of a diffraction grating and a three-mirror reflector. Coherent radiation with a peak power of tens of kW at the 3 mm waveband is sucessfully detected from an experimental facility. The main experimental parameters are: sheet beam energy from 400 kV to 500 kV; pulse length of voltage 70 ns; pulse beam current 0.2 kA; synchronous guide magnetic field up to 1.2 T with 10 ms pulse length; and grating period 2.2 mm.     

Simulation of Electron-Optical Systems with a Converging Sheet Beam for Terahertz Traveling-Wave Tubes

Journal of Communications Technology and Electronics - A converging sheet electron beam with a cross section of 0.05 × 2 mm2 and a current density of 200&nbsp;A/cm2 formed by an electron...     

Modeling a subterahertz traveling-wave tube with a slow-wave structure of the double grating type and a sheet electron beam

A traveling-wave tube of the millimeter range belonging to the short-wavelength region with a sheet electron beam and a slow-wave structure of the double grating type is studied. Its dispersion characteristics and coupling impedances for various spatial harmonics are calculated. The issues of design of the electron-optical system are discussed. The focusing of a sheet electron beam with a high current density by a uniform magnetic field is modeled.     

新型带状注毫米波器件的研究进展

近年来国际上关于毫米波带状电子注器件的研究工作表明这类器件潜在的巨大技术优势与应用潜力,同时也面临诸多技术难点。本文就毫米波带状器件的技术优势,国内外发展现状与趋势,以及面临的技术问题进行了深入分析。重点给出了我们正在开展的W波段带状注电子光学系统方面的工作,目前已经研制出了采用Wiggler聚焦的带状注束管,带状注电子枪压缩成形后的椭圆截面束流宽高比为25∶1。初步测试表明,带状注束管工作电压60 kV,工作电流2.58 A,传输距离50mm时,直流通过率达到了55%左右。目前,有关毫米波带状电子注聚焦与传输的性能优化与进一步的测试工作正在进行中。     

AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-sourceMBE

Al_0.3Ga_0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH₃). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility arc obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show f_t of 17 GHz and f_max of 40 GHz     

Synthesis of systems formation of converging sheet electron beams at partial magnetic shielding of the cathode

The synthesis method of electro-optical systems forming converging sheet electron beams at partial magnetic shielding of the cathode is developed. Equations of the inerior and exterior problems of the synthesis method and an equation for estimation of the deformation of the configuration of the sheet electron beam in the transit channel are obtained in the paraxial approximation. The proposed method is used to simulate electron guns forming converging sheet electron beams with the electrical parameters similar to the parameters of the uncompressed electron beam for terahertz radiation sources.     

Multiple-channel GaAs/AlGaAs high electron mobility transistors

Multiple-channel high electron mobility transistors (HEMT's) have been designed and fabricated on GaAs/AlGaAs heterostructural material grown by molecular beam epitaxy (MBE). The sheet carrier density of the two-dimensional electron gas (2-DEG) measured at 77 K was linearly proportional to the number of high mobility electron channels, and reached 5.3 × 10¹²cm^-2for six-channel HEMT structures. Depletion-mode devices of the double-heterojunction HEMT were operated between negative pinchoff voltage and forward-biased gate voltage without any transconductance degradation. A peak extrinsic transconductance of 360 mS/mm at 300 K and 550 mS/mm at 77 K has been measured for a 1-µm gate-length double-heterojunction enhancement-mode device. An extremely high drain current of 800 mA/mm with a gate-to-drain avalanche breakdown voltage of 9 V was measured on six-channel devices.