基于S3C44BOX的LCD驱动开发及其在Linux下的实现

介绍了LCD（液晶显示器）的基本工作原理和三星S3C44BOX的内置LCD控制器以及Linux操作系统下的设备管理。讨论了基于三星S3C44BOX内置LCD控制器的LCD驱动程序开发，重点介绍了将LCD驱动程序添加到Linux内核配置系统中的方法，使LCD驱动在Linux系统下得以实现。     

S3C44B0X内置的LCD控制器及其应用

本文介绍了S3C44B0X内置的LCD控制器，讨论它与KCS057QVIAJ液晶显示模块的接口设计及显示模块驱动程序开发。     

S3C44b0X控制LCD的设计与实现

介绍了S3C44B0X内置LCD控制器的原理与使用,并给出了该控制器与320×240的LCD硬件接口方法,在此基础上,详细论述了如何初始化S3C44B0X内置的LCD控制器,包括配置LCD控制端口,中请显示缓冲区,配置LCD控制寄存器等.在介绍了LCD上任意坐标画点程序的基础上,给出了LCD实现图形显示和字符显示的方法,并经实验验证此方法的正确性.     

S3C44b0X控制LCD的设计与实现

介绍了S3C44B0X内置LCD控制器的原理与使用,并给出了该控制器与320X240的LCD硬件接口方法,详细论述了如何驱动LCD以及LCD实现图形显示和字符显示的方法。     

S3C44B0X与LM057QC1T01的接口方法及其应用

本文着重介绍了ARM7处理器S3C44B0X内置LCD控制器的使用方法,简要介绍夏普LM057QC1T01液晶显示模块以及它和S3C44B0X的接口方法。并在此基础之上,讨论了彩色英文、汉字和图形在LCD模块上的显示原理和实现方法。     

Linux系统下基于S3C2410X的液晶显示驱动程序的研究

主要介绍Linux下基于S3C2410X的液晶驱动程序的研究与开发。首先详细介绍LCD控制器工作原理以及S3C2410X的LCD控制器及其管脚,同时给出LCD控制寄存器的设置规则。并根据系统中的液晶参数给出具体的硬件连接图,得到LCD控制寄存器的参数。然后介绍帧缓冲的工作原理,并说明了帧缓冲2个方面的实现,提出了一种适用于S3C2410X硬件的通用的液晶显示驱动程序的编写方法。开发了相应的驱动程序,得到很好的显示效果,可以稳定运行。     

基于S3C2410X的TFT LCD显示系统的设计

本文设计了嵌入式微处理器S3C2410X与三星TFT液晶屏LTV350QV-FOE的硬件接口电路.在嵌入式Linux下,使用GPIO端口模拟LTV350QV-FOE的SPI时序,阐述了LCD驱动程序的设计开发过程.     

用ARM实现的嵌入式系统液晶屏

ARM处理器具有高性能、低功耗、低成本等显著优点,已成为高性能、低功耗嵌入式微处理器的代名词,是目前32位、64位嵌入式微处理器中应用最为广泛的一个系列。采用S3C44B0X实现的嵌入式系统液晶屏,其内置的LCD控制器主要提供液晶屏显示数据的传送、时钟和各种信号的产生和控制功能。SG322400CNCWA与S3C44B0X液晶显示模块硬件连接时,通过74HC245把S3C44B0X的3.3V电压升压到LCD显示模块需要的5V电压,从而解决了液晶与ARM的电压不匹配问题。     

基于S3C44BOX的μC／OS-Ⅱ和μC／GUI整合移植

提出一种将开源实时操作系统μC／OS-Ⅱ与文件系统、图形界面等整合构建成一个嵌入式应用系统的设计方案。该方案通过分析μC／OS-Ⅱ的启动过程,重新配置和定义μC／OS-Ⅱ的3个主要函数,初始化S3C44B0X内部LCD控制器的驱动程序,修改μC／GUI相关的配置文件和宏定义,总结出一套在S3C44B0X上具体的整合方法、移植步骤以及注意事项。最后测试表明该整合移植方法是可行的,系统平台运行稳定可靠。     

基于S3C44B0X的μC/OS-Ⅱ和μC/GUI整合移植

提出一种将开源实时操作系统μC/OS-Ⅱ与文件系统、图形界面等整合构建成一个嵌入式应用系统的设计方案。该方案通过分析μC/OS-Ⅱ的启动过程,重新配置和定义μC/OS-Ⅱ的3个主要函数,初始化S3C44B0X内部LCD控制器的驱动程序,修改μC/GUI相关的配置文件和宏定义,总结出一套在S3C44B0X上具体的整合方法、移植步骤以及注意事项。最后测试表明该整合移植方法是可行的,系统平台运行稳定可靠。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.