微带线无源互调的传输矩阵理论方法

均匀微带线是微带电路的基本结构,建立微带线PIM解析模型具有重要意义。本文基于受控源等效,在微带线的集总电路等效模型中,将微带线中的分布式寄生非线性PIM源建模为二次受控电流源或电压源,从而得到微带线PIM电压和电流关系的传输矩阵表达式,建立了寄生非线性机制的微带线PIM解析计算模型;并通过对比不同长度的镀镍微带线与不同浓度掺磷工艺镀镍微带线的传输互调与反射互调规律,验证本文提出的PIM传输矩阵方法的合理性。通过该模型提取了镍镀层在0.71 GHz时的三阶相对磁导率非线性系数为1×10^-10 m²/A²。本文方法为进一步建立其他复杂结构微带电路PIM模型提供了新思路。     

A universal de-embedding procedure for the "on-wafer" GHz probing

A novel de-embedding procedure for "on-wafer" GHz probing is presented. The parasitic effects arising from the bond-pads are modeled generally by two-port networks. Thus, no equivalent circuit details are required. Even the transmission line effects occurring at extremely high frequencies can be taken into account in this model.<>     

基于新颖宽带肖特基二极管模型的毫米波平衡式混频器设计

介绍了一个用于混频器设计的肖特基二极管模型.根据二极管的物理结构,建立了三维电磁模型,并采用有限元法分析该模型.根据二极管中分布的寄生效应,建立了直到110 GHz的宽带等效电路.基于该等效电路,设计并优化了一个Ka频段的平衡式混频器.在32～37 GHz频率范围内,测试的变频损耗为7.5～10 dB.测试结果与仿真结...     

在片传输线等效电路模型的传递函数分析

提出了一种通过传递函数分析来确定在片传输线等效电路模型拓扑结构的新方法。通过这种方法,可分析得出由不同1-π单元组成的等效电路的拟合能力。通过对测量S参数的有理逼近构建了一个宽带宏模型。通过对比等效电路模型与宏模型的传递函数的零点和极点,开发出一种可靠且高效的确定传递函数等效电路结构的方法。分析发现复极点决定了模型的宽带拟合能力。共面传输线到50 GHz的测量S参数证明了本文提出的方法非常有助于寻找满足精度要求且最简单的拓扑。     

3 nm环栅场效应管射频小信号等效电路模型

针对3 nm环栅场效应晶体管,提出了一种射频小信号等效电路模型及基于有理函数拟合的解析模型参数提取方法。首先,在关态条件下提取不受偏置影响的非本征栅/源/漏极电阻、栅到源/漏电容、衬底电容和电阻。然后,在不同偏置条件下提取受偏置影响的本征模型参数。使用Sentaurus TCAD和Matlab对器件进行仿真并拟合得到相关参数,在ADS中验证等效电路模型。结果表明,在10 MHz~300 GHz频率范围内,TCAD仿真与等效电路仿真S参数的最大误差低于2.69%,证实了所建立模型及建模方法的准确性。该项研究成果对射频集成电路设计具有参考价值。     

一种基于传输线理论的新型GHz共模噪声抑制电路

基于传输线理论提出一种新型GHz宽阻带共模噪声抑制电路。利用双线传输线模型建立奇、偶模等效电路,在宽频带范围内准确预测了该电路结构的性能。实验结果表明:在1.9-4.5GHz频段内共模噪声抑制深度超-10dB,共模阻带相对带宽达81%;在dc-6GHz频段内差模插损小于3dB且差模信号群时延抖动较小,表明该结构可以很好地保证差模信号传输的信号完整性,性能优良。     

A traveling-wave high electron mobility transistor

A traveling-wave high electron mobility transistor (THEMT) is proposed. The device is unique in that it includes an integral distributed load resistor and uses a HEMT as the active device. A rigorous analysis of the device is carried out, using a small-signal equivalent circuit model for an incremental section of the device. Losses and reflected waves are not neglected, as has been done in other work. Treating the device as a four-port network, closed-form expressions for S-parameters are derived. Theoretical calculations, using equivalent circuit parameter values for a HEMT reported in the literature, show that the proposed device is capable of exponential increase in gain with device width. Power gain of more than 10 dB at 50 GHz and remarkably flat response in the frequency range 10-100 GHz are shown to be achievable for a 1-mm-wide device     

Accurate small-signal modeling of HFET's for millimeter-waveapplications

In this paper we discuss the small-signal modeling of HFET's at millimeter-wave frequencies. A new and iterative method is used to extract the parasitic components. This method allows calculation of a π-network to model the heterojunction field-effect transistor (HFET) pads, thus extending the validity of the model to higher frequencies. Formulas are derived to translate this π-network into a transmission line. A new and general cold field-effect transistor (FET) equivalent circuit, including a Schottky series resistance, is used to extract the parasitic resistances and inductances. Finally, a new and compact set of analytical equations for calculation of the intrinsic parameters is presented. The real part of Y₁₂ is accounted for in these equations and its modeling is discussed. The accounting of Re(Y₁₂ ) improves the S-parameter modeling. Model parameters are extracted for an InAlAs/InGaAs/InP HFET from measured S-parameters up to 50 GHz, and the validity of the model is evaluated by comparison with measured data at 75-110 GHz     

高速电路倒装互连结构的不连续性分析

针对倒装互连结构的不连续性,建立了各部分结构的解析式,结合等效电路以及全波仿真模型,利用仿真软件进行电路参数提取,解释了连接器件各个部分的物理意义,研究了封装的寄生参数对器件的影响。对于高速互连结构中普遍的不连续性,如焊点和传输线互连处等的信号特性进行仿真。可以找出有效的模型改进参数,使结构得到优化。应用仿真结果确定实验测试的方法,在保证模型特性的前提下,有效地降低了实验成本。最后对仿真结果进行了实验验证,并且有较好的一致性。     

A physical, yet simple, small-signal equivalent circuit for theheterojunction bipolar transistor

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor (HBT) is proposed. This circuit was established by analyzing in detail the physical operation of the HBT. The model verification was carried out by comparison of the measured and simulated S- and Z-parameters for both passive (reverse-biased) and active bias conditions. A feature of this model is that it uses a direct extraction method to determine the parasitic elements, in particular, the parasitic capacitances. The excellent agreement between the measured and simulated parameters was verified all over the frequency range from 0.25 to 75 GHz     

A novel transmission line characterisation based on measurement data reconfirmation

Due to inherent resonance effects and frequency-variant dielectric properties, it is very difficult to experimentally determine the stable and accurate circuit model parameters of thin film transmission line structures over a broad frequency band. In this article, a new, simple and straightforward frequency-variant transmission line circuit model parameter determination method is presented. Experimental test patterns for high-frequency transmission line characterisations are designed and fabricated using a package process. The S-parameters for the test patterns are measured using a vector network analyzer (VNA) from 100 MHz to 26.5 GHz. The parasitic effects due to contact pads are de-embedded. The frequency-variant complex permittivity and resonance-effect-free transmission line parameters (i.e., the propagation constant and characteristic impedance) are then determined in a broad frequency band.     

AlGaN/GaN高电子迁移率晶体管小信号等效电路的参数提取

本文在高电子迁移率晶体管(HEMT)小信号等效电路模型的基础上,考虑了AlGaN/GaN HEMT的结构特性,具体分析了寄生参数和本征参数的提取方法.采用这些方法,实际测量了5～10 GHz频率下HEMT器件的小信号S参数并提取了它的电学参数,S参数的计算值与实际测量值进行了比较.实验结果表明此方法简单易行,较为精确.     

Two-port noise and impedance measurements for two-terminal deviceswith a resonant tunneling diode example

A two-port technique is presented for determining the circuit elements and noise sources of the equivalent circuit of a two-terminal device at microwave frequencies. The two-terminal device is connected as a two-port so that intrinsic and parasitic circuit elements can be obtained from full two-port S-parameter measurements. This measurement does not require one of the two contacts to be grounded, which makes it particularly well suited for the characterization of integrated devices where parasitic elements become important and cannot be easily calculated. The noise of the device is measured by employing a noise-figure meter and the intrinsic noise is computed from the measured terminal noise. As an example, the impedance and noise elements of a resonant tunneling diode (RTD) are measured over frequency ranges of 2-8 and 2-4 GHz, respectively     

新型GaAs HEMT器件寄生电容的优化提取方法

针对优化提取参数的复杂度问题,提出了一种新的GaAs HEMT器件寄生电容的优化提取方法。提取寄生电容时,设置合适的优化范围,进行优化提参。采用三次参数优化,确保优化精度和模型准确性,避免了循环优化,提高了参数提取效率和参数优化效率。该方法不依赖器件的具体结构,减少了对器件结构假设所带来的误差。对17元件小信号等效电路模型参数进行提取,验证了该方法的可靠性。结果表明,S参数与实测S参数的拟合度较好,拟合的最高频率可达30 GHz。     

Wiring Effect Optimization in 65-nm Low-Power NMOS

This letter investigates the wiring effect on RF performance in advanced 65-nm low-power CMOS technology. New designs are proposed to minimize the parasitic resistances and capacitances associated with the interconnects in the transistor. Compared with the standard multifinger devices provided by the foundry, the device with the optimized wiring parasitic capacitances and resistances presents improvement up to $sim$ 21% for $f_{T}$ (increased from 89 to 108 GHz) and $sim$22% for $f_{max}$ (increased from 130 to 159 GHz), respectively. The extracted equivalent circuit model parameters indicate that the proposed approach can effectively minimize the parasitic effects leading to improved RF performance of the advanced MOSFETs.      

The Effects of Package Parasitics on the Stability of Microwave Negative Resistance Devices

The results of investigations of the effect of parasitic package elements on the behavior of negative resistance amplifiers are presented. Three different package styles were considered. Also two different lead configurations were used. The packages were all mounted in 7-mm coaxial transmission line. The impedance of packages with and without leads was measured from 4 to 18 GHz using a manual network analyzer. These data were used as the basis for calculations to determine the values of elements in a simple three-element equivalent circuit model of the package. Using the equivalent circuit model experimentally derived for each package style, the impedance seen by the chip through the package to a 50-/spl Omega/ load was calculated. Broad-band curves of the impedance seen by the chip are presented. The experimentally derived model of the package permits matching of chip and package for stability.     

Direct parameter-extraction method for HBT small-signal model

An accurate and broadband method for the direct extraction of heterojunction bipolar transistor (HBT) small-signal model parameters is presented in this paper. This method differs from previous ones by extracting the equivalent-circuit parameters without using special test structures or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from the measured S-parameters for the whole frequency range of operation. The extraction procedure uses a set of closed-form expressions derived without any approximation. An equivalent circuit for the HBT under a forward-bias condition is proposed for extraction of access resistances and parasitic inductances. An experimental validation on a GaInP/GaAs HBT device with a 2×25 μm emitter was carried out, and excellent results were obtained up to 30 GHz. The calculated data-fitting residual error for three different bias points over 1-30 GHz was less then 2%     

High-performance traveling-wave electroabsorption modulators utilizing mushroom-type waveguide and periodic transmission line loading

For the first time, periodic loaded electrodes and mushroom-type waveguide are combined to improve the performance of traveling-wave electroabsorption modulators (TWEAMs) based on the asymmetric intra-step-barrier coupled double strained quantum well (AICD-SQW). The electrical modulation response of periodic mushroom-type TWEAM is obtained by using equivalent circuit model, and is compared with simulation result of conventional mushroom-type TWEAM counterpart. The equivalent circuit model simulation results indicate that for the exemplary modulation length of 300 mm, the mushroom-type TWEAM with periodic transmission line loading can achieve much wider bandwidth about 99.7 GHz and 43.1 GHz than the conventional counterpart with about 43 GHz and 33 GHz for 35 W and 45 W terminations, respectively.     

柔性人工表面等离激元传输线的小型化设计

为了实现高集成度通信系统中高频信号的可靠传输,提出了一种小型化叉指H形人工表面等离激元传输线结构. 采用共面双导体形式,并在金属矩形凹槽处添加叉指结构,实现色散特性调控和尺寸缩减. 同时给出单元结构的等效电路模型,验证了小型化结构的设计原理,分析了力学形变时传输线的性能. 仿真与测试结果表明,与常规的人工表面等离激元相比,叉指H形人工表面等离激元传输线可在保持相同带宽（3～15.25 GHz）的同时,线宽减少79.5%,尺寸仅为2.28λ_g×0.098λ_g（λ_g为中心频率对应的波长）. 在平坦和变形时加工实物的带宽保持在3～12.90 GHz,与仿真结果较吻合. 设计的结构具有高频、小型化和柔性超薄等特点,在超小型高速通信系统中具有潜在的应用前景.     

一种新型超宽带小型化U型微带滤波器

提出了一种新型超宽带(UWB)小型化微带滤波器。这种结构采用多个短路支节并联于主传输线上,短路支节长度为四分之一波长。采用一种新型等效电路对其进行分析、模拟,其中的主传输线、并联支节线以及T型结、拐角、接地孔等不连续处均等效为相应的电路元件,并结合适当的U型电路变形。通过精确建模、仿真,使这种新型结构的滤波器具有更小的体积和更宽的通带。采用0.762 mm厚RT Duriod 6002板材实际制作一个通带为3～21 GHz的超宽带微带滤波器,尺寸为12 mm×21 mm×0.762 mm。该滤波器不仅体积小,且性能优良,其带内损耗小于2.1 dB,回波损耗优于-8.2 dB。实做通带2.96～21.01 GHz,带宽达150.6%,与仿真结果较为吻合,可以满足工程应用的需要。