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本文对辉光放电电子束在MOSFET中的应用进行研究。结果表明,利用辉光放电电子束掺杂方法成功地实现了微米、亚微米P-MOSFET。器件的漏流小,I-V特性好,源漏结浅、均匀和横向掺杂效应小。此方法与常规MOS工艺兼容,所需的设备结构简单、操作方便,价格低廉,易于推广到VLSI中去。 相似文献
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毛友德 《微电子学与计算机》1993,10(11):47-48,F003
利用直流辉光放电分解碳氢气体来淀积a-C:H膜,通过测量Al/a-C:H/SiMIS结构的高频C-V曲线讨论了a-C:H/Si界面的电子特性,结果表明a-C:H/Si膜有可能用作半导体器件的表面钝化膜。 相似文献
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本文研究了在SF6,CBrF3和CHF3与氧相混合的几种氟化气体等离子体中,SiC薄膜反应离子刻蚀(RIE)的深度。通过监测射频等离子体的光发射谱及产生等离子体的直流偏压来研究刻蚀机理,为了更精确地定量分析刻蚀工艺,使用氩光能测定技术使等离子发射强度转换为相应的等离子物质浓度。为获得选择性的SiC-Si刻蚀及SiC薄膜的各向异性图形,对等离子体条件,如气体混合物的构成,压力和功率进行了研究。首次采 相似文献
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介绍了近年来用辉光放电法制备的a-Si:H太阳电池的效率问题,文中讨论了有效光电能量转换的条件;a-Si:H电池的结构,新型的高效率非晶硅太阳电池的改进;非晶硅a-Si:H太阳电池的展望等。 相似文献
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介绍了产生等离子几种放电方式(如直流二极放电,射频放电,真空辉光放电,真空弧光放电等)与等离子体相关的溅射沉积,离子镀沉积等常用的真空沉积技术及其在薄膜 备中的应用。 相似文献
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钯/超薄氧化层/硅隧道二极管氢敏器件的研制 总被引:1,自引:0,他引:1
本文采用Pd/UTSiO2/n-Si隧道二极管结构,研制出在室温下空气中,对150ppm氢气反向电流改变10倍以上的氢敏器件。 相似文献
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Yaung D.N. Fang Y.K. Chen C.H. Hung C.C. Tsao F.C. Wuu S.G. Liang M.S. 《Electron Device Letters, IEEE》2001,22(1):23-25
In this letter, a short time low temperature oxidation of poly-Si channel has been studied to suppress the photoexcited current of the hydrogenated poly-Si TFTs. The effect of the treatment, which contains different-time oxidation and different-time post-hydrogenation, on the dark-current and photocurrent of poly-Si TFTs under off state were investigated in detail. An optimal combination of both technologies has been proposed according to the investigation. The poly-Si TFTs treated with the optimal process can be operated well under a high illumination environment 相似文献
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Seok-Woon Lee Tae-Hyung Ihn Seung-Ki Joo 《Electron Device Letters, IEEE》1996,17(8):407-409
High-mobility p-channel poly-Si TFTs were fabricated using a new low-temperature process (⩽500°C): self-aligned metal-induced lateral crystallization (MILC). With a one-step annealing at 500°C, activation of dopants in source/drain/gate a-Si films as well as the crystallization of channel a-Si films was achieved. The TFTs showed a threshold voltage of -1.7 V, and an on/off current ratio of ~107 without post-hydrogenation. The mobility was measured to be as high as 90 cm2/V·s, which is two to three times higher than that of the poly-Si TFTs fabricated by conventional solid-phase crystallization at around 600°C 相似文献
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<正> 一、 引言 随着半导体器件向微小型化发展,电路的速度与栅极和互连材料密切相关。目前应用较广的多晶硅栅技术具有自对准形成源漏区、低阈值电压、高温热稳定性好等优点。但多晶硅的电阻率较高,严重影响了电路速度的提高。在多晶硅上生长一层具有高电导率的TiSi_2薄膜取代多晶硅作为栅电极,可以有效地克服多晶硅电阻率高的缺点,提高电路速度。 本实验采用NH_3等离子体增强热退火,使Ti/poly Si固相反应形成TiSi_2,同时表面形成一层很薄的TiN。TiN被证明是一层良好的扩散阻挡层。通过对TiN/TiSi_2复合薄膜的薄层电阻测试和MOS高频C—V测试,证明这种方法是可行的。 相似文献
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多晶硅薄膜晶体管的表面氮钝化技术 总被引:2,自引:0,他引:2
采用N2O和NH3等离子钝化技术对多晶硅薄膜表面和栅氧表面进行了钝化处理。实验结果表明,该技术能有效降低多晶硅薄膜的界面态密度,提高多晶硅薄膜晶体管性能,二次离子质谱分析表明在p-Si/SiO界面有氮原子富积,说明生成了强的Si-N键。 相似文献
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RAO Rui XU Chong-yang SUN Guo-cai ZHOU Xue-mei ZENG Xiang-bin ZHAO Bo-fang 《半导体光子学与技术》2001,7(1):17-19,23
Using a new low-temperature process (<600 ℃), the poly-Si TFT was fabricated by metal-induced lateral crystallization (MILC). An ultrathin aluminum layer was deposited on a-Si film and selectively formed by photolithography. The films were then annealed at 560 ℃ to obtain laterally crystallized poly-Si film, which is used as the channel area of a TFT. The poly-Si TFT showed an on/off current ratio of higher than 1×10 6 at a drain voltage of 5 V. The electrical properties are much better than TFT fabricated by conventional crystallization at 600 ℃. 相似文献
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Yong Woo Cboi Jeong No Lee Tae Woong Jang Byung Tae Ahn 《Electron Device Letters, IEEE》1999,20(1):2-4
Solid phase crystallization of amorphous silicon films for poly-Si thin film transistors (TFTs) has advantages of low cost and excellent uniformity, but the crystallization temperature is too high. Using a microwave annealing method, we lowered the crystallization temperature and shortened the crystallization time. The complete crystallization time at 550°C was within 2 h. The device parameters of TFTs with the poly-Si films crystallized by microwave annealing were similar to those of TFTs with the poly-Si films crystallized by conventional furnace annealing. The new crystallization method seems attractive because of low crystallization temperature, short crystallization time, and comparable film properties 相似文献
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用LPCVD方法生长了掺As多晶Si薄膜,通过能谱分析,扩展电阻测量,扫描电子显微镜观测,发现用LPCVD方法生长的掺As多晶Si可获得极高的掺As浓度,As对衬底材料(SiO2或多晶Si)具有超常的低温快扩散特性,掺As多晶Si经高温退火,晶粒大小有反常的变化。利用这些特性可成功地解决LPCVD法生长掺As多晶Si所遇到的生长速度愈来愈慢,As浓度愈来愈高,难以生长较厚掺As多晶Si等问题。 相似文献
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Hyung Soo Uh Byung Gook Park Jong Duk Lee 《Electron Device Letters, IEEE》1998,19(5):167-170
As an approach to improve electron field emission and its stability, molybdenum (Mo) silicide formation on n+ polycrystalline silicon (poly-Si) emitters has been investigated. Mo silicide was produced by direct metallurgical reaction, namely, deposition of Mo and subsequent rapid thermal annealing. The surface morphologies and emission properties of Mo-silicided poly-Si (Mo-polycide) emitters have been examined and compared with those of poly-Si emitters. While anode current of 0.1 μA per tip could be obtained at the gate voltage of 82 V from poly-Si emitters, the same current level was measured at 72 V from Mo-polycide emitters. In addition, the application of Mo silicide onto poly-Si emitters reduced the emission current fluctuation considerably. These results show that the polycide emitters can have potential applications in vacuum microelectronics to obtain superior electron emission efficiency and stability 相似文献
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Kawahara T. Nishida Y. Sakashita S. Mizutani M. Inoue M. Yamanari S. Higashi M. Hayashi T. Murata N. Honda K. Yugami J. Yoshimura H. Yoneda M. 《Electron Device Letters, IEEE》2007,28(10):868-870
The effects of the diffusion control technique by inserting physical vapor deposition (PVD)-TiN film between poly-Si and CVD-TiN films on the properties of p-MISFETs using poly-Si/TiN/HfSiON gate stacks have been studied. This insertion was effective in suppressing the diffusion of Si from poly-Si to HfSiON and was able to reduce the Vth value by 0.12 V while keeping the equivalent oxide thickness and S value constant, when the thicknesses of the PVD and CVD-TiN films were 10 and 5 nm, respectively. Although too much ion implantation of fluorine into the substrate deteriorates S value and ION, it was verified that this diffusion control technique, in conjunction with a moderate substrate fluorine implantation, provided a reduction of Vth in pMIS without a deterioration of ION. 相似文献