共查询到16条相似文献,搜索用时 62 毫秒
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采用超高真空电子束蒸发方法在硅单晶衬底上制备了Co/Cu/Co三明治膜,研究了衬底晶向、过渡工层材料和生长室温度对三明治膜中巨磁电阻效应的影响;结合原子力显微镜表面形貌观察,探讨了三明治膜表面(界面)组糙度与其巨磁电阻效应的内在关系;还分析了三明治膜经高温热退火后巨磁电阻效应退化的物理机制。 相似文献
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用高真空电子束蒸发方向制备了以半导体材料Si为过渡层的Co/Cu/Co三明治膜并研究了其巨磁电阻效应。当Si过渡层厚度达到0.9nm时,三明治膜中开始出现较强的平面内磁各是性。在Si 15nmm/co5nm/Cu3nm/Co5nm结构中,在其易轴上得到了5.5%的巨磁电阻值和0.9%/Oe的高磁场灵敏度。研究了过渡层Si/Co界面之间的相互扩散,发现在过渡层Si与Co层间形成了Co-Si化合物。这 相似文献
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用高真空电子束蒸发方法制备了以半导体材料Si 为过渡层的Co/Cu/Co三明治膜并研究了其巨磁电阻效应。当Si 过渡层厚度达到0.9nm 时,三明治膜中开始出现较强的平面内磁各向异性。在Si1.5nm/Co 5nm/Cu 3nm/Co 5nm结构中,在其易轴上得到了5 .5% 的巨磁电阻值和0.9 %/Oe 的高磁场灵敏度。研究了过渡层Si/Co 界面之间的相互扩散,发现在过渡层Si 与Co 层间形成了CoSi 化合物。这个硅化物界面层诱导了三明治膜的平面内磁各向异性,从而导致了易轴上高灵敏度巨磁电阻效应。 相似文献
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体积越来越小,容量越来越大——在如今这个信息时代,存储信息的硬盘自然而然被人们寄予了这样的期待。得益于"巨磁电阻"效应运一重大发现,最近20多年来,我们开始能够在笔记本电脑、音乐播放器等所安装的越来越小的硬盘中存储海量信息。 相似文献
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电子束蒸发法制备Co/Cu多层膜中巨磁电阻效应的研究 总被引:5,自引:2,他引:3
沈鸿烈 《功能材料与器件学报》1997,3(4):229-235
研究了超高真空电子束蒸发法制备的Co/Cu多层膜中过渡层Cr、磁性金属Co怪和非磁性金属Cu层厚度等对巨磁电阻效应的影响。 相似文献
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基于NiFeCo/Cu多层膜巨磁电阻效应的磁微球检测 总被引:1,自引:0,他引:1
分析了应用于磁性生物检测的GMR传感器的工作原理.直流磁控溅射法制备了Ni65Fe15CO20/Cu多层膜,研究了室温下多层膜的GMR效应对缓冲层(NiFeCo)厚度、间隔层(Cu)厚度及铁磁层(NiFeCo)厚度等参数的依赖关系,得到了GMR值达8.8%的多层膜样品:缓冲层(NiFeCo)5nm,间隔层(Cu)2.4nm,铁磁层(NiFeCo)1.6nm,且饱和场低、磁滞小、灵敏度较高,符合磁性生物检测技术的要求.制备了基于优化参数NiFeCo/Cu多层膜的GMR传感器,对器件的性能进行了测试,结果表明所制备的GMR传感器能够检测磁微球. 相似文献
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采用MEMS技术在玻璃基片上制备了三明治结构FeNi/Cu/FeNi多层膜,在1~40 MHz范围内研究了FeNi/Cu/FeNi多层膜中的巨磁阻抗效应特性.当磁场Ha施加在薄膜的长方向时,巨磁阻抗效应随磁场的增加而增加,在某一磁场下达到最大值,然后随磁场的增加而下降到负的巨磁阻抗效应.在频率为5MHz时,巨磁阻抗效应在磁场Ha=800 A/m时达到最大值26.6%.巨磁阻抗效应的最大值及负的巨磁阻抗效应与多层膜中磁各向异性轴的取向及发散有关.另外,当磁场施加在薄膜的短方向时,薄膜表现出负的巨磁阻抗效应,在频率5 MHz、磁场Ha=9600 A/m时,巨磁阻抗效应可达-15.6%. 相似文献
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Co3 nm/Irx/Co3 nm sandwiches with 0.5, 1 and 1.5-nm thickness of Ir were deposited on glass substrates covered by a Fe5 nm/Co0.5 nm/Cu3 nm layer, using the ion beam sputtering (IBS) technique. The maximum giant magnetoresistance and coupling strength were, respectively, 2% and −0.55 erg/cm2. The magnetic and transport properties were investigated and correlated with atomic force microscopy measurements. The surface roughness was analyzed at each stage of the growth by calculating the root mean square (RMS) on surfaces of 1×1 μm2. The average roughness was small, approximately 0.3 nm, which is a necessary condition to observe an anti-ferromagnetic exchange coupling in a sandwich stack. 相似文献
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本文用双靶相对磁控溅射法(FTMS)在云母单晶基板上原位生长了巨磁阻Co/Cu超晶格薄膜,研究了放电气压及背景真空对薄膜结构和电磁性质的影响。 相似文献
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Á. CzirákiL. Péter B. ArnoldJ. Thomas H.D. BauerK. Wetzig I. Bakonyi 《Thin solid films》2003,424(2):229-238
The maximum room-temperature giant magnetoresistance (GMR) of electrodeposited Co-Cu/Cu multilayers produced during this work was approximately 9% at 8 kOe, and it was found to decrease with increasing bilayer repeat number. A transmission electron microscopy study has revealed the fine details of the microstructure formed during growth. At the beginning of the deposition very small, nano-sized crystallites formed with both hexagonal close-packed (hcp) and face-centred cubic (fcc) crystal structures containing a high level of internal stress. The Cu-content of these small crystallites was found to depend strongly on their crystal structure (fcc or hcp). After this initial polycrystalline region, the size of crystallites increases, forming an fcc superlattice with increasing average Cu concentration at the first hundreds of repeat periods. This increase is not monotonous across the whole sample thickness. As another effect, the bending of layer planes becomes more remarkable as the growth progresses. The above inhomogeneities formed during the deposition of hundreds of bilayers could be responsible for the decrease in GMR with increasing total thickness of the multilayered samples. 相似文献
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Xiuhua CHEN Xinghui WU Jinzhong XIANG Zhenlai ZHOU Heyun ZHAO Liqiang CHEN 《材料科学技术学报》2006,22(3):342-344
Some information on how to use in-situ determined diffusion coefficient of Cu to make barrier layer of Cu metallization in ultra large scale integrations (ULSIs) was provided. Diffusion coefficients of Cu in Co at low temperature were determined to analyze Cu migration to Co surface layer. The diffusion depths were analyzed using X-ray photoelectron spectroscopy (XPS) depth profile to investigate the diffusion effect of Cu in Co at different temperatures. The possible pretreatment temperature and time of barrier layer can be predicted according to the diffusion coefficients of Cu in Co. 相似文献
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The magnetoresistance (MR) variation of Co/Cu/Co/CoNbZr spin valves as a result of rapid thermal annealing has been investigated. MR ratio of 3.8% was obtained in the as-deposited sample and a considerable increase to 6.86% was observed in the 450°C×60 s treated sample. Microstructure studies show that the enhancement of MR ratio is a consequence of the nano-crystallization of amorphous CoNbZr soft layer. The nano-crystallized CoNbZr possess fine and dense microstructure and excellent electrical and soft magnetic properties which leads to the MR enhancement. With increasing annealing temperature or annealing time, interface roughness caused by rapid grain growth decrease the MR ratio rapidly. XRD studies imply that the interfusion of Cu atom into the Co layer is another possible degradation mechanism of Co/Cu/Co/CoNbZr spin valves at annealing temperature beyond 550°C. 相似文献