Conduction analysis of Li2O doped 0.2[Pb(Mg1/3Nb2/3)]–0.8[PbTiO3–PbZrO3] ceramics fabricated by columbite precursor method

We have fabricated 0.2Pb(Mg_1/3Nb_2/3)O₃–0.8Pb(Zr_0.475Ti_0.525)O₃ [PMN–PZT] ceramics doped with various amounts of Li₂O (0, 0.05, 0.1, 0.2, 0.3 wt.%) using the columbite precursor method. The effects of Li-doping on the conduction behavior of PMN–PZT ceramics are discussed in relation to the low frequency dielectric dispersion and frequency domain measurement. The Li-doped PMN–PZT ceramics sintered at 950 °C showed a sufficient densification with large dielectric constant and low dielectric loss. The incorporation of Li⁺ ion in PMN–PZT ceramics led to an appreciable reduction in electrical conductivity and further enhanced the ferroelectric and piezoelectric properties. The activation energies of PMN–PZT + xLi₂O (x = 0, 0.05, 0.1, 0.2, 0.3 wt.%) ceramics calculated from ac conductivity measurement using the Arrhenius relation were 1.05, 1.25, 1.27, 1.38 and 1.41 eV, respectively. The conduction behavior is examined in the low frequency and high temperature region and the results are discussed in detail through crystal defect mechanism.     

Piezoelectric and dielectric properties of PZT–PZN–PMS ceramics prepared by molten salt synthesis method

Piezoelectric powders and ceramics with the composition of Pb_0.95Sr_0.05(Zr_0.52Ti_0.48)O₃–Pb(Zn_1/3Nb_2/3)O₃–Pb(Mn_1/3Sb_2/3)O₃ (PZT–PZN–PMS) were prepared by molten salt synthesis (MSS) and conventional mixed-oxide (CMO) methods, respectively. The influence of synthesis process on the properties of powders and ceramics were investigated in detail. The results show that the MSS method significantly improved the sinterability of PZT–PZN–PMS ceramics, resulting in an improvement of dielectric and piezoelectric properties compared to the CMO method. The optimum values of MSS samples are as follows: _r = 1773; tan δ = 0.0040; T_c = 280 °C; d₃₃ = 455 pC/N; k_p = 0.70; Q_m = 888; E_c = 10.3 kV/cm; and P_r = 28.2 μC/cm², at calcination of 800 °C and sintering of 1120 °C temperature.     

Ferroelectrics: new wide-gap materials for UV detection

Photoconductive properties of some sol-gel deposited, ferroelectric thin films are investigated in the ultraviolet (UV) domain. The investigated materials are: Bi₄Ti₃O₁₂ (BiT)_; SrBi₂Ta₂O₉ (SBT) and Pb(Zr_0.45Ti_0.55)O₃ (PZT). It was found that all these materials exhibit pronounced photoconductivity in the 250–500 nm domain. The best current responsivity was obtained for Bi₄Ti₃O₁₂ (BiT) films.     

The influence of fabrication processing on domain structure and polarization switching in PZN-based ferroelectric ceramics

Lead zinc niobate (Pb(Zn_1/3Nb_2/3)O₃, PZN) based ceramics are prepared by using conventional mixing oxide and complex phase reaction-sintering ceramic techniques. From the results of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM), it is clear that these two fabrication processing routes produce different microstructures and ferroelectric domains in the same Pb(Zn_1/3Nb_2/3)O₃–BaTiO₃–Pb(Zr_0.4Ti_0.6)O₃ composition. Furthermore, different phase transitions are observed for the temperature dependence of the dielectric permittivity that can be confirmed by differential scanning calorimetry (DSC). Different polarization switching characteristics are also examined by using high field-induced strain and ferroelectric hysteresis loop. It is suggested that the distribution of the inner stress and domain configuration should be related with the fabrication processing of ferroelectric ceramics.     

High electrical properties of W-additive Mn-modified PZT–PMS–PZN ceramics for high power piezoelectric transformers

The ceramics were prepared successfully by the addition of WO₃ to the Mn-modified Pb(Zr_0.52Ti_0.48)O₃–Pb(Mn_1/3Sb_2/3)O₃–Pb(Zn_1/3Nb_2/3)O₃ (PZT–PMS–PZN) for high power piezoelectric transformers application. XRD analysis indicated that the ceramics were mainly composed of a tetragonal phase in the range of 0–1.0 wt.% WO₃ addition. The grain size of the ceramics significantly decreased from 10.0 to 2.9 μm by addition of WO₃. Moreover, the addition of WO₃ promoted densification of the ceramics and increased mechanical quality factor (Q_m), planar coupling factor (K_p) and piezoelectric constant (d₃₃) kept high values, whereas, dielectric loss (tan δ) was low. Δf (=f_a − f_r) slightly changed when WO₃ addition was above 0.5 wt.%. The ceramics with 0.6 wt.% WO₃ addition, sintered at 1150 °C showed the optimized piezoelectric and dielectric properties with Q_m of 1852, K_p of 0.58, d₃₃ of 243 pC/N and tan δ of 0.0050. The ceramics are promising candidates for high power piezoelectric transformers application.     

Doping and electrical characteristics of in-situ heavily B-doped Si1−x−yGexCy films epitaxially grown using ultraclean LPCVD

Doping and electrical characteristics of in-situ heavily B-doped Si_1−x−yGe_xC_y (0.22<x<0.6, 0<y<0.02) films epitaxially grown on Si(100) were investigated. The epitaxial growth was carried out at 550°C in a SiH₄–GeH₄–CH₃SiH₃–B₂H₆–H₂ gas mixture using an ultraclean hot-wall low-pressure chemical vapor deposition (LPCVD) system. It was found that the deposition rate increased with increasing GeH₄ partial pressure, and only at high GeH₄ partial pressure did it decrease with increasing B₂H₆ as well as CH₃SiH₃ partial pressures. With the B₂H₆ addition, the Ge and C fractions scarcely changed and the B concentration (C_B) increased proportionally. The C fraction increased proportionally with increasing CH₃SiH₃ partial pressures. These results can be explained by the modified Langmuir-type adsorption and reaction scheme. In B-doped Si_1−x−yGe_xC_y with y=0.0054 or below, the carrier concentration was nearly equal to C_B up to approximately 2×10²⁰ cm⁻³ and was saturated at approximately 5×10²⁰ cm⁻³, regardless of the Ge fraction. The B-doped Si_1−x−yGe_xC_y with high Ge and C fractions contained some electrically inactive B even at the lower C_B region. Resistivity measurements show that the existence of C in the film enhances alloy scattering. The discrepancy between the observed lattice constant and the calculated value at the higher Ge and C fraction suggests that the B and C atoms exist at the interstitial site more preferentially.     

Improved fatigue properties of lead zirconate titanate films made on oxygen-implanted platinum electrodes

Pb(Zr_0.3Ti_0.7)O₃ (PZT) thin film capacitors fabricated on an oxygen-implanted Pt bottom electrode were studied. Oxygen was implanted at a low acceleration voltage (40 kV) and dose (1×10¹⁵ cm⁻²). Structural examination by grazing-incident X-ray diffraction (GIXD) and chemical analysis by X-ray photoelectron spectroscopy (XPS) revealed that the implantation generated a very thin amorphous top surface layer (approx. 20 nm), which contained approximately 7% of oxygen that stayed in the film in the form of PtO bonding. The amorphous layer, however, resumed the crystalline structure accompanied by the dissociation of PtO under the rapid thermal annealing at 600 °C for 5 min. The remnant polarization of sol–gel derived Pb(Zr_0.3Ti_0.7)O₃ (PZT) films fabricated on the oxygen-implanted Pt was slightly reduced from 11.92 μC/cm² for the PZT capacitors fabricated on a Pt electrode without implanted oxygen to 9.07 μC/cm². Nevertheless, the fatigue endurance was significantly increased. The switching polarization of PtO_x/PZT/Pt (O-implanted) capacitors remained within 95% of the starting value after 4×10¹⁰ switching cycles, which is comparable to that of PZT capacitors made with other conducting oxides.     

Er2O3掺杂Gd2(Zr0.8Ti0.2)2O7陶瓷的物理性能

用固相反应法制备(Gd_1-xEr_x)₂(Zr_0.8Ti_0.2)₂O₇(摩尔分数x=0,0.2,0.4)陶瓷并测试其晶体结构、显微形貌和物理性能,研究了Er₂O₃掺杂的影响。结果表明,(Gd_1-xEr_x)₂(Zr_0.8Ti_0.2)₂O₇陶瓷具有立方烧绿石结构,显微结构致密,在室温至1200℃高温相的稳定性良好;Er³⁺掺杂降低了陶瓷材料的热导率和平均热膨胀系数,当x=0.2时,其1000℃的热导率最低(为1.26 W·m^-1·k^-1)。同时,Er³⁺掺杂还提高了这种材料的硬度和断裂韧性。     

Ferroelectric/superconductor heterostructures

This review covers the fabrication and characterization of ferroelectric/superconductor heterostructures such as Pb(Zr_xTi_1−x)O₃/YBa₂Cu₃O_7−δ (YBCO), BaTiO₃/YBCO and Ba_xSr_1−xTiO₃/YBCO etc. on various single crystal substrates. Pulsed laser deposition, laser molecular beam epitaxy, and magnetron-sputtering methods are compared. This report shows that pulsed laser deposition equipped with in situ reflection high-energy electron diffraction is a good method to control the growth mode of YBCO thin films. Furthermore, laser molecular beam epitaxy is a superb method for research of complex oxide films and their superlattices. Atomic force microscopy and transmission electron microscopy showed the ferroelectric films grown on the rough surface of the YBCO films produced high-density planar defects in the film and is detrimental to the ferroelectric/dielectric properties of the heterostructures. Therefore, for device usage, it is more advantageous to use SrRuO₃ than YBCO as the bottom electrode material. For growing atomically smooth surface films step-flow mode is highly recommended. Prospects of microwave device application of the ferroelectric/superconductor heterostructures are discussed, and proposed the BSTO films as the best candidate for passive microwave components.     

Structural relaxation and crystallisation of bulk metallic glasses Zr41Ti14Cu12.5Ni10−xBe22.5Fex (x = 0 or 2) studied by mechanical spectroscopy

The measurements of the internal friction and dynamic shear modulus as well as differential scanning calorimetry have been performed in order to investigate the structural relaxation and crystallization of Zr₄₁Ti₁₄Cu_12.5Ni_10−xBe_22.5Fe_x (x=0 or 2) bulk metallic glasses. It is found that the glass transition is retarded and the thermal stability of supercooled liquid is increased by the Fe addition. The experimental results are well analyzed using a physical model, which can characterize atomic mobility and mechanical response of disordered condensed materials.     

BiAlO3掺杂PZT陶瓷的高压电性能和低电场应变滞后

铅基压电陶瓷因其优异的压电性能, 被广泛应用于压电器件。其中, 压电驱动器要求压电陶瓷具有较高压电性能并且在电场下具有较高的电致应变和较小的应变滞后。本研究通过施主-受主共掺, 得到高压电性能和低电场应变滞后的PZT陶瓷。采用传统固相反应法制备了(1-x)(Pb_0.95Sr_0.05)(Zr₅₃Ti₄₇)O₃-xBiAlO₃+0.2%MnO₂陶瓷(掺杂量为质量百分数), 并对其微观结构和压电性能进行了研究。结果表明：BiAlO₃掺杂量较少时, 陶瓷中缺陷偶极子的“钉扎”效应使得陶瓷畴壁转动困难, 陶瓷压电性能较弱, 应变滞后也较小。随BiAlO₃掺杂量增加, 缺陷偶极子“钉扎”效应减弱, 陶瓷的压电性能和应变滞后随之提高。本实验得到的性能最优组分为x=1.75%, 该组份陶瓷的压电系数d₃₃=504 pC/N, 机电耦合系数k_p=0.71, 机械品质因数Q_m=281, 居里温度T_C=312 ℃, 在10 kV/cm电场下的应变滞后仅为15%, 并且还具有较好的温度稳定性, 是一种具有应用价值的压电驱动器用压电陶瓷材料。     

Optical Properties of Pb(Zr,Ti)O/sub 3/Films Prepared by Aerosol Deposition

The optical properties and related band structure of ferroelectric lead zirconate titanate [PZT, Pb(Zr_0.6Ti_0.4)O₃] films prepared on glass substrates at room temperature by aerosol deposition were investigated. The reflectance and transmittance of the PZT films were measured in the wavelength range from UV to near-infrared. The measured optical spectra were analyzed using dielectric function models that describe optical transitions in the band gap region. Optical absorption of the as-deposited PZT films was found to be larger than that of the annealed PZT films in the near-infrared wavelength range. The analyzed results indicated that post-deposition annealing increased the band gap energy of the PZT films, corresponding to a decrease in optical absorption.     

Crystallization behavior and domain structure in textured Pb(Zr0.52Ti0.48)O3 thin films by different annealing processes

Amorphous Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were prepared on the Pt/Ti/SiO₂/Si substrates by radio-frequency magnetron sputtering at room temperature. After rapid thermal annealing (RTA) and conventional furnace annealing (CFA) at different temperatures, the films were transformed into polycrystalline PZT thin films with (111) and (100) orientation, respectively. The phase formation and ferroelectric domains correlated with different orientation were systematically investigated by X-ray diffraction and piezoresponse force microscopy. The results showed that the perovskite PZT crystal with [111] orientation hetero-nucleated preferentially on top of the PtPb intermetallic phase at the PZT/Pt interface during RTA process. It is of interest to find that the domain self-organized into a structure with rounded shape at the early stage of crystallization. While the nucleation of the films treated by CFA dominantly homo-nucleated, thus the (100) orientation grains with minimum surface energy were easy to grow. The texture effects on ferroelectric properties of PZT films were also discussed in relation to the domain structure.     

Ag glasses based on Zn-phosphate

The partial substitution of Zn²⁺ for Ag⁺ in Ag₄P₂O₇ leads to the formation of a wide glassy domain of composition [Ag₄P₂O₇] _(1−y) [Zn₂P₂O₇] _(y) with 0.20y0.87. The introduction of AgI in these materials results in a new series of glasses of formula [(Ag₄P₂O₇)_(1−y) (Zn₂P₂O₇)_(y)] _(1−X) [AgI] _(x), which domain for the composition y = 0.25 corresponds to 0x 0.64. The structure as well as the thermal and electrical properties of these materials are compared with those of the [AgPO₃] _(1−X) [AgI] _(x) and [Ag₄P₂O₇] _(1−x) [AgI] _(x) glasses.     

复合掺杂BCZT陶瓷的介电弛豫行为研究

采用固相法制备了Ba_0.9175Ca_0.08Nd_0.0025(Zr_0.18Ti_0.8175-xY_xMn_0.0025)O₃ (BCZT-Y, x=0、0.5mol%、0.75mol%、1.0mol%、 1.5mol% 、2.0mol%)铁电陶瓷, 研究了不同Y³⁺掺杂量对该铁电陶瓷结构与介电性能的影响。结果表明: 随着Y³⁺掺杂量增加, Y³⁺进入晶格, BCZT-Y陶瓷的密度从4.029 g/cm³增加到6.058 g/cm³; 同时介电峰压低并展宽, 居里温度向低温方向移动, 表现出明显的铁电体弛豫特征, 采用Lorenz型公式对该实验结果进行拟合验证,发现随着Y³⁺掺杂量增加, 电滞回线变窄变斜、回线面积大幅减小, 剩余极化强度和矫顽电场降低。     

Sb掺杂对N型half-Heusler材料热电性能的影响

研究了Sb掺杂对N型half-Heusler化合物Zr_0.25Hf_0.25Ti_0.5NiSn_1-xSb_x (x=0、0.002、0.005、0.01、0.02、0.03)热电传输特性的影响。结果显示, 随着Sb掺杂量增加, 材料的载流子浓度提高, 电阻率降低, 尤其是低温(<300 K)电阻率下降显著, 赛贝克系数降低, 且取得最大赛贝克系数的温度向高温端移动, 最大功率因子增加~20%, 材料的热导率增大, 主要是电子热导率提高的贡献, 晶格热导率影响不大; 当Sb掺杂量较低时(x<0.01), 材料的最大热电性能优值ZT值在0.77左右, 掺杂量x=0.005的样品ZT值在整个温度区间内最优。     

Synthesis, characteristics and oxygen-sensitive properties of SrMgxTi 1 − xO3 nanocrystals

SrMg_xTi_{1 - x}O₃ nanocrystals (x = 0.1–0.6) were synthesized by the stearic acid gel method. Powder samples were characterized by X-ray diffraction and X-ray photoelectron (XP) spectroscopy. The results showed that the lattice parameter a and the O 1s XP spectrum changed not only with the Mg content x but also with the grain size d of the samples. The conductivity of a thick film specimen fabricated on an aluminium oxide wafer was investigated in a nitrogen—oxygen atmosphere.     

Structural characterization of ion-beam-induced epitaxially crystallized thin layers of III–V and IV–IV semiconductors

Structural properties of ion-beam-induced epitaxial crystallization (IBIEC) for amorphous layers of GaAs on GaAs(100), BP on BP(100) and Si_1−xGe_x and Si_1−x−yGe_xC_y on Si(100) have been investigated. Crystallization was induced by ion bombardment with 400 keV Ne, Ar or Kr at 150 °C for GaAs and at 350 °C for BP. Epitaxial crystallization up to the surface was observed both in GaAs and BP at temperatures much below those required for the solid phase epitaxial growth (SPEG). The growth rate per nuclear energy deposition density has shown a larger dependence on ion dose rate in cases of heavier ion bombardments both for GaAs and BP. Crystallization of a-GaAs with ions whose projected ranges are within the amorphous layer thickness was also observed at 150 °C. Epitaxial crystallization of Si_1−xGe_x and Si_1−x−yGe_xC_y layers (x = 0.13 and y = 0.014 at peak concentration) on Si(100) formed by high-dose implantation of 80 keV Ge and 17 keV C ions has been observed in the IBIEC process with 400 keV Ar ion bombardments at 300–400 °C. Crystalline growth by IBIEC has shown a larger growth rate in Si_1−x−yGe_xC_y/Si} than in Si_1−xGe_x/Si} with the same Ge concentration for all bombardments under investigation. X-ray rocking-curve measurements have shown a strain-compensated growth in Si_1−x−yGe_xC_y/Si}, whereas Si_1−xGe_x/Si} samples have shown a growth with strain accommodation.     

Polar nanodomains and relaxor behaviour in (1 − x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 crystals with x = 0.3–0.5

Phase transitions and dielectric properties of the (1 − x)Pb(Mg_1/3Nb_2/3)O₃–xPbTiO₃ crystals with x = 0.3–0.5 are studied. The solid solutions in this composition range are shown to be relaxor ferroelectrics. The crystals with low x demonstrate a diffused maximum in the temperature dependences of the dielectric permittivity at T_m. T_m varies with frequency according to the Vogel–Fulcher law. The polarizing microscopy investigations reveal a first-order phase transition from the relaxor phase to the low-temperature ferroelectric phase at T_C, which is several degrees below T_m. The permittivity peak in the crystals with x = 0.5 is sharp, and T_m is equal to T_C and does not depend on frequency, as is typical of the transition from a ferroelectric to an ordinary paraelectric phase. Nevertheless, the relaxor, but not the paraelectric, phase is observed at T > T_m. This conclusion is confirmed by the observation of the temperature behaviour of complex dielectric permittivity at T > T_m, which is typical of relaxors and related to the existence of polar nanodomains.     

Buckling analysis of functionally graded plates subjected to uniaxial loading

Elastic bifurcational buckling of functionally graded plates under in-plane compressive loading is studied. It is supposed that the gradients of material properties throughout the structure are produced by a spatial distribution of the local reinforcement volume fraction v_f = v_f(x, y, z). To analyze the problem, a method based on a combination of micromechanical and structural approaches is employed. This establishes the effective constitutive behavior at every point of a nonhomogeneous composite plate and provides a buckling criterion. The derived criterion enables one to calculate the critical buckling load R_x^cr for a given distribution v(x, y, z).

Furthermore, with the aim to improve the buckling resistance of the functionally graded plate, the functional R_x^cr(v_f) is maximized. This yields an optimal spatial distribution v_f(x, y, z) of the reinforcement phase.

Results are presented for both short- and long-fiber SiC/Al plates in which the fibers are nonuniformly distributed in the x-, y-, or z-directions. The effects of length-to-width ratio of the plate, and of different types of boundary conditions are studied. Buckling load improvements of up to 100%, as compared to the corresponding uniformly reinforced structure, are shown.