Bulk Spin Torque-Driven Perpendicular Magnetization Switching in L10 FePt Single Layer

Due to its inherent superior perpendicular magnetocrystalline anisotropy, the FePt in L1₀ phase enables magnetic storage and memory devices with ultrahigh capacity. However, reversing the FePt magnetic state, and therefore encoding information, has proven to be extremely difficult. Here, it is demonstrated that an electric current can exert a large spin torque on an L1₀ FePt magnet, ultimately leading to reversible magnetization switching. The spin torque monotonically increases with increasing FePt thickness, exhibiting a bulk characteristic. Meanwhile, the spin torque effective fields and switching efficiency increase as the FePt approaches higher chemical ordering with stronger spin–orbit coupling. The symmetry breaking that generates spin torque within L1₀ FePt is shown to arise from an inherent structural gradient along the film normal direction. By artificially reversing the structural gradient, an opposite spin torque effect in L1₀ FePt is demonstrated. At last, the role of the disorder gradient in generating a substantial torque in a single ferromagnet is supported by theoretical calculations. These results will push forward the frontier of material systems for generating spin torques and will have a transformative impact on magnetic storage and spin memory devices with simple architecture, ultrahigh density, and readily application.     

Unconventional Charge–Spin Conversion in Weyl-Semimetal WTe2

An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency. Here, a charge-current-induced spin polarization in the type-II Weyl semimetal candidate WTe₂ and efficient spin injection and detection in a graphene channel up to room temperature are reported. Contrary to the conventional spin Hall and Rashba–Edelstein effects, the measurements indicate an unconventional charge-to-spin conversion in WTe₂, which is primarily forbidden by the crystal symmetry of the system. Such a large spin polarization can be possible in WTe₂ due to a reduced crystal symmetry combined with its large spin Berry curvature, spin–orbit interaction with a novel spin-texture of the Fermi states. A robust and practical method is demonstrated for electrical creation and detection of such a spin polarization using both charge-to-spin conversion and its inverse phenomenon and utilized it for efficient spin injection and detection in the graphene channel up to room temperature. These findings open opportunities for utilizing topological Weyl materials as nonmagnetic spin sources in all-electrical van der Waals spintronic circuits and for low-power and high-performance nonvolatile spintronic technologies.     

Reduction of ordering temperature of self-assembled FePt nanoparticles by addition of Au and Ag

The [FePt]94Au6 and [FePt]90Ag10 nanoparticle arrays were synthesized on Si substrates by a reverse micellar method, combined with plasma treatment and in-situ deposition of a SiO2 overlayer, and the post annealing step was performed to drive the face-centered cubic to tetragonal phase transition. These FePt nanoparticles exhibit a quasi-hexagonal order with tailored inter-particle spacing and particle size. The effects of the Ag and Au on the structural and magnetic properties of FePt were investigated. The results indicate that both Au and Ag additives can remarkably enhance the coercivity and reduce the ordering temperature, however, the optimum composition is different for them. The optimum composition is determined to be [FePt]94Au6 and [FePt]90Ag10, respectively, for which the ordering temperature of FePt nanoparticles is reduced by -100 degrees C. After 600 degrees C annealing, the [FePt]94Au6 and [FePt]90Ag10 nanoparticles are totally ferromagnetic with apparent larger coercivities of -7.0 kOe, which is about 3.8 kOe larger than that of the pure FePt nanoparticles. The mechanism of the chemical ordering acceleration may be attributed to the defects and strains caused by the Au/Ag additives.     

Sintering Effect of Annealed FePt Nanocrystal Films Observed by Magnetic Force Microscopy

Chemically synthesized FePt nanocrystals can exhibit room temperature ferromagnetism after being annealed at temperatures above 500degC. In thick films composed of FePt nanocrystals, the coercivity can be quite large. However, the coercivity of thin films has been found to decrease significantly with decreasing thickness, to the point that ferromagnetism at room temperature is lost. We studied 12 to 55 nm thick films by using magnetic force microscopy (MFM) under external applied fields. We made smooth films by spin casting 4-nm-diameter FePt nanocrystals and annealing them at 605degC-630degC. Thin FePt films showed lower coercivity than thick films. To help interpret the MFM images, we obtained complementary magnetic and structural data by superconducting quantum interference device (SQUID) magnetometry, transmission electron microscopy (TEM), and X-ray diffraction. We conclude that the magnetic properties of these films are strongly affected by nanocrystal aggregation that occurs during annealing     

Current Pumping from Spin Dynamics

We show theoretically that charge and spin currents arise from spin dynamics in the presence of the spin–orbit interaction. The dominant calculation is the inverse spin Hall effect, namely the spin current pumped from precession of local spins is converted into the charge current by the spin–orbit interaction. The conversion mechanism is explained based on the conservation laws of charge and spin.     

Spin Hall effect devices

The spin Hall effect is a relativistic spin-orbit coupling phenomenon that can be used to electrically generate or detect spin currents in non-magnetic systems. Here we review the experimental results that, since the first experimental observation of the spin Hall effect less than 10 years ago, have established the basic physical understanding of the phenomenon, and the role that several of the spin Hall devices have had in the demonstration of spintronic functionalities and physical phenomena. We have attempted to organize the experiments in a chronological order, while simultaneously dividing the Review into sections on semiconductor or metal spin Hall devices, and on optical or electrical spin Hall experiments. The spin Hall device studies are placed in a broader context of the field of spin injection, manipulation, and detection in non-magnetic conductors.     

Spin current,spin accumulation and spin Hall effect

Abstract

Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin–orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin–orbit coupling in nonmagnetic metals is proposed.     

Direct observation of the spin-dependent Peltier effect

The Peltier coefficient describes the amount of heat that is carried by an electrical current when it passes through a material. When two materials with different Peltier coefficients are placed in contact with one another, the Peltier effect causes a net flow of heat either towards or away from the interface between them. Spintronics describes the transport of electric charge and spin angular momentum by separate spin-up and spin-down channels in a device. The observation that spin-up and spin-down charge transport channels are able to transport heat independently of each other has raised the possibility that spin currents could be used to heat or cool the interface between materials with different spin-dependent Peltier coefficients. Here, we report the direct observation of the heating and cooling of such an interface by a spin current. We demonstrate this spin-dependent Peltier effect in a spin-valve pillar structure that consists of two ferromagnetic layers separated by a non-ferromagnetic metal. Using a three-dimensional finite-element model, we extract spin-dependent Peltier coefficients in the range -0.9 to -1.3 mV for permalloy. The magnetic control of heat flow could prove useful for the cooling of nanoscale electronic components or devices.     

Spin Seebeck Effect in Ni$_{81}$Fe$_{19}$/Pt Thin Films With Different Widths

The spin Seebeck effect (SSE) has been measured in Ni $_{81}$Fe $_{19}$ thin films which have different widths by using the inverse spin Hall effect (ISHE) in a Pt wire. The ISHE voltage induced by SSE is enhanced by lengthening the Pt wire. Combined with ISHE, SSE is applicable to the production of electric generators in which the thermoelectric figures of merit are tunable in terms of device structure.      

Design of Bistable Gold@Spin‐Crossover Core–Shell Nanoparticles Showing Large Electrical Responses for the Spin Switching

A simple chemical protocol to prepare core–shell gold@spin‐crossover (Au@SCO) nanoparticles (NPs) based on the 1D spin‐crossover [Fe(Htrz)₂(trz)](BF₄) coordination polymer is reported. The synthesis relies on a two‐step approach consisting of a partial surface ligand substitution of the citrate‐stabilized Au NPs followed by the controlled growth of a very thin layer of the SCO polymer. As a result, colloidally stable core@shell spherical NPs with a Au core of ca. 12 nm and a thin SCO shell 4 nm thick, are obtained, exhibiting a narrow distribution in sizes. Differential scanning calorimetry proves that a cooperative spin transition in the range 340–360 K is maintained in these Au@SCO NPs, in full agreement with the values reported for pristine 4 nm SCO NPs. Temperature‐dependent charge‐transport measurements of an electrical device based on assemblies of these Au@SCO NPs also support this spin transition. Thus, a large change in conductance upon spin state switching, as compared with other memory devices based on the pristine SCO NPs, is detected. This results in a large improvement in the sensitivity of the device to the spin transition, with values for the ON/OFF ratio which are an order of magnitude better than the best ones obtained in previous SCO devices.     

Manipulating spin current in the magnetic nanopillar

Because of the capability to switch the magnetization of a nanoscale magnet, the spin transfer effect is critical for the application of magnetic random access memory. For this purpose, it is important to enhance the spin current carried by the charge current. Calculations based on the diffusive spin-dependent transport equations reveal that the magnitude of spin current can be tuned by modifying the ferromagnetic layer and the spin relaxation process in the device. Increasing the ferromagnetic layer thickness is found to enhance both the spin current and the spin accumulation. On the other hand, a strong spin relaxation in the capping layer also increases the spin current but suppresses the spin accumulation. To demonstrate the theoretical results, nanopillar structures with the size of approximately 100 nm are fabricated and the current-induced magnetization switching behaviors are experimentally studied. When the ferromagnetic layer thickness is increased from 3 nm to 20 nm, the critical switching current for the current-induced magnetization switching is significantly reduced, indicating the enhancement of the spin current. When the Au capping layer with a short spin-diffusion length replaces the Cu capping layer with a long spin-diffusion length, the reduction of the critical switching current is also observed.     

Room-Temperature Magnetic Skyrmions and Large Topological Hall Effect in Chromium Telluride Engineered by Self-Intercalation

Room-temperature magnetic skyrmion materials exhibiting robust topological Hall effect (THE) are crucial for novel nano-spintronic devices. However, such skyrmion-hosting materials are rare in nature. In this study, a self-intercalated transition metal dichalcogenide Cr_1+xTe₂ with a layered crystal structure that hosts room-temperature skyrmions and exhibits large THE is reported. By tuning the self-intercalate concentration, a monotonic control of Curie temperature from 169 to 333 K and a magnetic anisotropy transition from out-of-plane to the in-plane configuration are achieved. Based on the intercalation engineering, room-temperature skyrmions are successfully created in Cr_1.53Te₂ with a Curie temperature of 295 K and a relatively weak perpendicular magnetic anisotropy. Remarkably, a skyrmion-induced topological Hall resistivity as large as ≈106 nΩ cm is observed at 290 K. Moreover, a sign reversal of THE is also found at low temperatures, which can be ascribed to other topological spin textures having an opposite topological charge to that of the skyrmions. Therefore, chromium telluride can be a new paradigm of the skyrmion material family with promising prospects for future device applications.     

Correlation between the Chemical Properties of Elements and Their Natural Abundance in the Context of the Search for Superheavy Elements in Nature

A study was made of the correlation between the chemical properties of elements [light homologsof superheavy elements (SHEs)], their levels in products of various endogenic geological processes andin substances of certain space bodies (in particular, the Tunguska meteorite) in order to gain insight intopossible distribution of SHEs in Solar system bodies. Physicochemical aspects of endogenic processes were discussed. It was shown that, along with geothermal brines (oceanic water), the most promising natural materials to be tested for SHEs are some volcanic (fumarole, griffon) products, lunar rocks, and asteroids. Certain differences in the elemental compositions of crude oil and living matter were discussed which suggest the presence in the crude oil of volatile components, including SHEs, and agree with Mendeleev's hypothesis of inorganic synthesis of oil.     

Probing spin accumulation in Ni/Au/Ni single-electron transistors with efficient spin injection and detection electrodes

We have investigated spin accumulation in Ni/Au/Ni single-electron transistors assembled by atomic force microscopy. The fabrication technique is unique in that unconventional hybrid devices can be realized with unprecedented control, including real-time tunable tunnel resistances. A grid of Au disks, 30 nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventional e-beam writing. Subsequently, 30 nm thick ferromagnetic Ni source, drain, and side-gate electrodes are formed in similar process steps. The width and length of the source and drain electrodes were different to exhibit different coercive switching fields. Tunnel barriers of NiO are realized by sequential Ar and O2 plasma treatment. By use of an atomic force microscope with specially designed software, a single nonmagnetic Au nanodisk is positioned into the 25 nm gap between the source and drain electrodes. The resistance of the device is monitored in real time while the Au disk is manipulated step-by-step with angstrom-level precision. Transport measurements in magnetic field at 1.7 K reveal no clear spin accumulation in the device, which can be attributed to fast spin relaxation in the Au disk. From numerical simulations using the rate-equation approach of orthodox Coulomb blockade theory, we can put an upper bound of a few nanoseconds on the spin-relaxation time for electrons in the Au disk. To confirm the magnetic switching characteristics and spin injection efficiency of the Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Ni magnetic tunnel junction with asymmetric dimensions of the electrodes similar to those of the single-electron transistors. Magnetoresistance measurements on the test device exhibited clear signs of magnetic reversal and a maximum tunneling magnetoresistance of 10%, from which we deduced a spin polarization of about 22% in the Ni electrodes.     

Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal

One of the main bottleneck issues for room-temperature antiferromagnetic spintronic devices is the small signal read-out owing to the limited anisotropic magnetoresistance in antiferromagnets. However, this could be overcome by either utilizing the Berry-curvature-induced anomalous Hall resistance in noncollinear antiferromagnets or establishing tunnel-junction devices based on effective manipulation of antiferromagnetic spins. In this work, the giant piezoelectric strain modulation of the spin structure and the anomalous Hall resistance in a noncollinear antiferromagnetic metal—D0₁₉ hexagonal Mn₃Ga—is demonstrated. Furthermore, tunnel-junction devices are built with a diameter of 200 nm to amplify the maximum tunneling resistance ratio to more than 10% at room-temperature, which thus implies significant potential of noncollinear antiferromagnets for large signal-output and high-density antiferromagnetic spintronic device applications.     

Controlled synthesis and multifunctional properties of FePt-Au heterostructures

In this work, FePt-Au heterostructured nanocrystals (HNCs) such as tadpole-, dumbbell-, bead-, and necklace-like nanostructures were synthesized by a facile heteroepitaxial growth of Au NCs onto FePt nanorods (NRs). A study of the growth mechanism revealed that the morphology control of the final products can be correlated with the adsorption sites of hydrogen onto the FePt NRs, which can be manipulated by the amount of the forming gas (Ar/7% H₂) added. Not only the optical characteristic and magnetic properties of the intrinsic materials were retained in the products, but also the FePt-Au HNCs showed the tunable multifunctional properties resulted from the interactions between Au and FePt. Moreover, for methanol oxidation, the FePt-Au HNCs exhibited enhanced catalytic activity and CO tolerance on the catalyst surface compared to commercial Pt catalysts. It is worth noting that as multifunctional units, the FePt-Au HNCs also possess a heterogeneous surface, which could potentially enable their site-specific functionalization for targeting or imaging purposes in biomedical applications. More interestingly, the catalytic properties of the FePt-Au HNCs also endow this material with application potentials in nanocatalysis.      

基于数字图像识别和光纤传感器的直流大电流在线校准装置

在电解冶金和电化学工业领域,大量霍尔直流超大电流传感器无预留校准接口。针对这一实际问题,设计了一种基于数字图像识别和光纤电流传感器的直流大电流在线校准装置。该在线校准装置以光纤电流传感器为标准,利用图像传感器实时采集霍尔电流传感器二次显示仪表的示数图像,对采集到的图像进行灰度化、中值滤波、二值化、闭运算、字符分割等预处理,并采用穿线法进行图像识别,获取霍尔电流传感器的采样值,并与光纤电流传感器的标准测量值进行实时比较,计算被校霍尔电流传感器的测量误差。现场校准的实验结果验证了校准方法及装置的可行性。     

Single Nanoparticle Magnetic Spin Memristor

There is an increasing demand for the development of a simple Si‐based universal memory device at the nanoscale that operates at high frequencies. Spin‐electronics (spintronics) can, in principle, increase the efficiency of devices and allow them to operate at high frequencies. A primary challenge for reducing the dimensions of spintronic devices is the requirement for high spin currents. To overcome this problem, a new approach is presented that uses helical chiral molecules exhibiting spin‐selective electron transport, which is called the chiral‐induced spin selectivity (CISS) effect. Using the CISS effect, the active memory device is miniaturized for the first time from the micrometer scale to 30 nm in size, and this device presents memristor‐like nonlinear logic operation at low voltages under ambient conditions and room temperature. A single nanoparticle, along with Au contacts and chiral molecules, is sufficient to function as a memory device. A single ferromagnetic nanoplatelet is used as a fixed hard magnet combined with Au contacts in which the gold contacts act as soft magnets due to the adsorbed chiral molecules.     

Nondestructive Measurement of Hall Coefficient for Materials Characterization

The Hall effect is widely exploited in NDE for measuring unknown weak magnetic fields using a small piece of conducting material of known high Hall coefficient. The Hall effect could be also exploited in NDE for measuring the unknown weak Hall coefficient of conducting materials using a strong applied magnetic field, but such measurements are fraught with difficulties because of the need to cut the specimen into a small piece similar to a Hall sensor, which of course is inherently destructive. This paper tries to answer the question how the need for destructive cutting in order to produce a measurable Hall voltage could be avoided. The underlying problem is that the Hall effect produces a Hall current that is normal to the conduction current but does not directly perturb the electric potential distribution unless the Hall current is intercepted by the boundaries of the specimen. This study investigated the feasibility of using alternating current potential drop techniques for nondestructive Hall coefficient measurement in plates. Specifically, the directional four-point square-electrode configuration is investigated with superimposed external magnetic field. Two methods are suggested to make Hall coefficient measurements in large plates without destructive machining. At low frequencies constraining the bias magnetic field can replace destructively constraining the dimensions of the specimen. At sufficiently high inspection frequencies the magnetic field of the Hall current induces a strong enough Hall electric field that produces measurable potential differences between points lying on the path followed by the Hall current even when it is not intercepted by either the edge of the specimen or the edge of the magnetic field. Both techniques are investigated first analytically to illuminate the underlying physics and then by numerical simulations to make useful quantitative predictions.     

Strongly Surface State Carrier-Dependent Spin–Orbit Torque in Magnetic Topological Insulators

The topological surface states (TSS) in topological insulators (TIs) can exert strong spin–orbit torque (SOT) on adjacent magnetization, offering great potential in implementing energy-efficient magnetic memory devices. However, there are large discrepancies among the reported spin Hall angle values in TIs, and its temperature dependence still remains elusive. Here, the spin Hall angle in a modulation-doped Cr-Bi_xSb_2−xTe₃ (Cr-BST) film is quantitatively determined via both transport and optic approaches, where consistent results are obtained. A large spin Hall angle of ≈90 in the modulation-doped Cr-BST film is demonstrated at 2.5 K, and the spin Hall angle drastically decreases to 0.3–0.5 as the temperature increases. Moreover, by tuning the top TSS carrier concentration, a competition between the top and bottom TSS in contributing to SOT is observed. The above phenomena can account for the large discrepancies among the previously reported spin Hall angle values and reveal the unique role of TSS in generating SOT.