TiNi形状记忆合金薄膜的研究现状

TiNi形状记忆合金薄膜是近几年来随着微电子电路发展的新兴材料。目前,涂覆TiNi合金薄膜的材料被广泛用作集成电路中微驱动器、微动开关等智能电路元件等。介绍了TiNi合金薄膜的制备方法,总结了制备过程中影响薄膜性质的因素,结合TiNi合金薄膜的应用现状,提出了未来TiNi合金薄膜研究发展方向。     

TiO2薄膜孔结构对其光催化性能的影响

通过在溶胶－凝胶溶液中掺入聚乙烯乙二醇有机聚合物,利用普通釉面砖做衬底,制备了多孔ＴｉＯ２薄膜,扫描电镜观察表明,一定的热处理条件下,有机聚合物可以显著改变ＴｉＯ２薄膜的孔结构。光催化结果显示,适当的孔结构可以明显提高ＴｉＯ２薄膜对有机磷农药的光催化效率。     

钒含量对磁控溅射TiAlVN薄膜性能的影响

采用磁控溅射法在不同V靶功率下制得一系列不同V含量的TiAlVN膜。通过能谱分析、X射线衍射、硬度测量和高温退火研究了V原子分数对Ti Al VN膜成分、晶相结构、硬度和抗高温氧化性能的影响。结果表明,不同V含量的TiAlVN膜均为面心立方结构,呈TiN(111)面择优取向。随V原子分数的增大,TiAlVN膜的硬度增大,抗高温氧化性能变差。当V原子分数为16.96%(即磁控溅射的V靶功率为60 W)时,TiAlVN膜的硬度最高(为31.67 GPa),抗高温氧化性能较好。     

磁控溅射功率对WOx薄膜结构和光催化活性的影响

采用射频磁控溅射法在非加热载玻片上制备WOx薄膜.通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱仪(XPS)、台阶仪、UV-Vis-NIR3600型紫外可见分光光度计和接触角计,研究不同溅射功率下薄膜的物相结构、表面形貌、元素价态、膜厚、光学性能、光催化和亲水性能.结果表明,随着溅射功率增加,薄膜的光学带隙逐渐减小,薄膜光催化活性与亲水性均提高.180 W溅射功率沉积的薄膜放置在亚甲基蓝溶液里,然后用紫外灯照射210 min,亚甲基蓝降解率达到97％;WOx薄膜在紫外灯下照射120 min时,水接触角达到12.2°,停止照射之后放置在可见光下260 min,水接触角达到19.1°.     

氧气对磁控溅射HfO2薄膜电学性能的影响

采用射频磁控溅射法在无氧和有氧气氛下制备了HfO2薄膜.通过X射线衍射(XRD)、X射线光电子能谱(XPS)、高分辨透射电子显微镜(HRTEM)、傅立叶变换红外光谱(FTIR)、椭圆偏振光谱(SE)以及电容-电压(C-V)测试对薄膜的结构、成分、HfO2/Si界面和HfO2栅介质MOS结构的电学性能等进行了分析表证.结果表明,溅射过程中通入氧气后,薄膜出现了较明显的结晶化;薄膜的氧化程度得到提高,成分更接近理想化学计量比HfO2.在HfO2/Si界面处存在的SiO2界面层,有氧条件下界面层的厚度增大.氧气的通入改善了HfO2栅介质MOS结构的电学性能.     

负偏压对磁控溅射镀镍薄膜组织结构的影响

采用磁控溅射技术在钼圆片基体表面制备了镍薄膜,并用扫描电镜、平整度仪和X射线衍射分析仪对其进行了表征。研究了不同负偏压对薄膜附着力、微观结构、平整性、晶粒取向以及大小的影响。结果表明,随负偏压增大,薄膜与基体结合力明显增强;适当的负偏压能改善薄膜表面致密性和平整性,在450 V时达到最优。但当负偏压进一步升高到600 V时,镍膜的表面起伏反而变大,平整性有所下降。负偏压对镍膜晶面生长的择优取向影响并不明显,而晶粒尺寸随负偏压增加呈增大的趋势。     

磁控溅射工艺参数对NdFeB薄膜表面形貌及相结构的影响

本文对直流磁控溅射法制备NdFeB薄膜工艺进行了研究.采用单晶硅为基体材料,在不同的溅射功率、溅射气压、溅射时间等条件下制备薄膜.之后对薄膜进行了SEM、AFM、XRD分析结果表明,NdFeB薄膜沉积速率、表面形貌及相结构与溅射功率、溅射气压、溅射时间密切相关.并根据实验结果给出优化的NdFeB薄膜制备工艺.     

Bi元素对钛酸锶钡薄膜结构与性能影响的研究

研究了微量元素铋对Sr0.5Ba0.5-xBixTiO3薄膜介电性能的影响.当X分别为0～0.030 mol时,相对介电常数εr、介质损耗tanδ逐渐降低,最大介电常数温度点Tm(居里温度点)逐渐移向低温;在所测试频率范围内,εr、tanδ均能表现出较好的频散特性;当铋掺量为0.015mol时,薄膜的Pr为0.22μC/cm2、Ps为0.32μC/cm2、Ec为60kV/cm.采用XRD、FTIR、TEM等测试方法分析了薄膜的结构特征.薄膜的矿物组成为四方钙钛矿结构,但[TiO6]八面体特征吸收峰(471.65cm-1)移向低波数,晶粒粒径减小.     

原料结构对BOPP薄膜拉伸工艺及性能的影响

选取5种具有典型结构的双向拉伸聚丙烯(BOPP)薄膜专用料,研究了该专用料分子结构对BOPP薄膜拉伸工艺及性能的影响。结果表明:共聚组分含量较高的F280B原料具有较宽的拉伸工艺窗口,其薄膜的光学性能较好,但力学性能相对较低;薄膜性能受原料分子链等规度和共聚单体含量等因素的影响。     

功率对直流磁控溅射氧化钒薄膜电学性能的影响

采用直流磁控溅射方法在长有300 nm厚的Si₃N₄薄膜的Si(100)晶圆上制备了氧化钒薄膜,利用X射线衍射仪(XRD)、X射线光电子能谱(XPS)、原子力显微镜(AFM)和探针法分析了不同功率对薄膜结晶结构、成分、表面形貌和电学性能的影响。结果表明：不同功率沉积的氧化钒薄膜均为非晶结构,薄膜主要成分为VO₂和V₂O₅;随着功率的提高,薄膜的平均粗糙度降低,V₂O₅的含量升高,进而导致电阻温度系数绝对值也随之增大。     

Structural and optical properties of ZnS thin films deposited by RF magnetron sputtering

Zinc sulfide [ZnS] thin films were deposited on glass substrates using radio frequency magnetron sputtering. The substrate temperature was varied in the range of 100°C to 400°C. The structural and optical properties of ZnS thin films were characterized with X-ray diffraction [XRD], field emission scanning electron microscopy [FESEM], energy dispersive analysis of X-rays and UV-visible transmission spectra. The XRD analyses indicate that ZnS films have zinc blende structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM data also reveal that the films have nano-size grains with a grain size of approximately 69 nm. The films grown at 350°C exhibit a relatively high transmittance of 80% in the visible region, with an energy band gap of 3.79 eV. These results show that ZnS films are suitable for use as the buffer layer of the Cu(In, Ga)Se₂ solar cells.     

磁控溅射氮化铬和氮化钛薄膜的性能

采用磁控溅射在4Cr5MoSiV热作模具钢表面分别沉积了CrN和TiN薄膜.通过扫描电镜(SEM)和电子能谱(EDS)分析了试样的微观结构和相结构,研究了CrN和TiN薄膜的抗氧化性能,并用压痕法测定了薄膜的力学性能.结果表明,CrN薄膜的高温抗氧化性能和结合强度高于TiN薄膜,但TiN薄膜的韧性比CrN薄膜好.     

Effect of Ar:N2 flow rate on morphology,optical and electrical properties of CCTO thin films deposited by RF magnetron sputtering

Calcium copper titanate (CCTO) thin films were deposited on indium tin oxide (ITO) substrates using radio frequency (RF) magnetron sputtering, at selected Ar:N₂ flow rates (1:1, 1:2, 1:4, and 1:6 sccm) at ambient temperature. The effect of Ar:N₂ flow rate on the morphology, optical and electrical properties of the CCTO thin films were investigated using FESEM, XRD, AFM, Hall effect measurement, and UV–Vis spectroscopy. It was confirmed by XRD analysis that the thin films were produced is CCTO with cubic crystal structure. As the flow rate of Ar:N₂ increased up to 1:6 sccm, the thin film thickness reduced from 87 nm to 35 nm while the crystallite size of CCTO thin film decreased from 27 nm to 20 nm. Consequently, the surface roughness of thin film was halved from 8.74 nm to 4.02 nm. In addition, the CCTO thin films deposited at the highest Ar:N₂ flow rate studied, at 1:6 sccm; are having the highest sheet resistivity (13.27 Ω/sq) and the largest optical energy bandgap (3.68 eV). The results articulate that Ar:N₂ flow rate was one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties and optical properties of CCTO thin films.     

Structural and nanomechanical properties of BiFeO3 thin films deposited by radio frequency magnetron sputtering

The nanomechanical properties of BiFeO₃ (BFO) thin films are subjected to nanoindentation evaluation. BFO thin films are grown on the Pt/Ti/SiO₂/Si substrates by using radio frequency magnetron sputtering with various deposition temperatures. The structure was analyzed by X-ray diffraction, and the results confirmed the presence of BFO phases. Atomic force microscopy revealed that the average film surface roughness increased with increasing of the deposition temperature. A Berkovich nanoindenter operated with the continuous contact stiffness measurement option indicated that the hardness decreases from 10.6 to 6.8 GPa for films deposited at 350°C and 450°C, respectively. In contrast, Young''s modulus for the former is 170.8 GPa as compared to a value of 131.4 GPa for the latter. The relationship between the hardness and film grain size appears to follow closely with the Hall–Petch equation.     

Electrochemical properties of boron-carbon-nitride films formed by magnetron sputtering

The electrochemical behavior of B_1.0C_2.4N_1.0 thin film was investigated in acidic, neutral and alkaline solutions. The anodic polarization curve of the film in 1 M NaOH showed the anodic dissolution of the film. The curve of the film in 1 M HCl showed no anodic dissolution. The cathodic polarization curve in 1 M NaCl showed shift to a negative potential side, but the anodic polarization curve was the same as that of Pt. The anodic dissolution in 1 M NaOH depended on potentials, that is, no anodic dissolution was recognized in a potential range of −0.2 to 0.1 V but the dissolution rate increased with increasing potential in a range of 0.1-0.6 V. The anodic current density of the film is directly proportional to the dissolution rate at potentials higher than 0.1 V. The dissolution rate of the film was increased with increasing solution pH.     

Effect of deposition parameters on properties of TiO2 films deposited by reactive magnetron sputtering

TiO₂ films were grown onto unheated 5083 aluminum alloy substrates by reactive magnetron sputtering from a pure Ti target in Ar-O₂ gas mixture in different power, bias voltage, Ar/O₂ ratio and deposition time at room temperature. The effects of different deposition parameters on the structure and properties of TiO₂ films were investigated systematically by field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), nanoindentation tests, electrochemical tests and antibacterial tests. The results show that power and bias voltage are two main factors to affect the structure and properties of TiO₂ films during the sputtering process. XRD results show that anatase phase is the main phase of the film, and the enhanced content of anatase phase with the increase of sputtering power and bias voltage. Nanoindentation tests exhibit that higher H/E (Hardness/Modulus) ratio can be achieved by depositing TiO₂ film. And the corrosion resistance and antifouling property are all improved after depositing TiO₂ film. 2# sample shows the optimal corrosion resistance, E_corr and I_corr are −0.27388 V and 3.7232 μA/cm², respectively. 1# sample exhibits excellent antibacterial property, the d ensity of bacteria is only 217 cell / mm², which is 484% higher than that of uncoated matrix.     

Growth evolution of CaB6 thin films deposited by DC magnetron sputtering

CaB₆ films were deposited by a DC magnetron sputtering method to explore the growth evolution systematically through changing sputtering time. The crystalline structure was characterized by XRD and GIXRD respectively, which showed that the films were anisotropic with nanocrystalline structure. The grain sizes increased with the deposition time, and a weak (100) texture appeared when the deposition time reached to 120 min. HRTEM was employed to demonstrate the crystalline structure. The surface morphology evolution of CaB₆ films was analyzed by AFM and FESEM. The results showed that the films were initially formed by fine columnar grains. With the deposition time extended, the films exhibited a dense columnar structure with faceted surfaces. The grain size, film thickness and crystallization degree all increased with the sputtering time.     

Structure, elemental composition, and mechanical properties of films prepared by radio-frequency magnetron sputtering of hydroxyapatite

The phase composition, substructure, and surface morphology of 0.1-to 5.0-μm-thick films grown on different substrates by radio-frequency magnetron sputtering of a hydroxyapatite ceramic target are investigated using transmission electron microscopy (TEM), high-energy electron diffraction, X-ray diffraction, IR spectroscopy, Auger electron spectroscopy, ultrasoft X-ray emission spectroscopy, Rutherford backscattering spectroscopy, scanning electron microscopy (SEM), and atomic-force microscopy (AFM). The hardness and adhesion strength of these films are studied using the nanoindentation and scratching methods. It is revealed that the structure of the films depends on the spatial inhomogeneity of the plasma discharge. Single-phase dense nanocrystalline hydroxyapatite films are formed when the substrate is located above the erosion zone. According to the X-ray diffraction, high-energy electron diffraction, and IR spectroscopic data, the structure of the films corresponds to the hydroxyapatite structure. As follows from the Auger electron, ultrasoft X-ray emission, and Rutherford backscattering spectroscopic data, the elemental composition of the films is similar to the stoichiometric composition of hydroxyapatite. The analysis of the X-ray diffraction and AFM data demonstrates that the films have a dense structure. The results of the mechanical tests show that the hardness of the coatings is higher than 10 GPa and that the maximum adhesion strength (L _C = 12.8 N) is observed for the hydroxyapatite coatings on the titanium substrate modified by the TiC-TaC-Ca₃(PO₄)₂ composite layer.     

A comparative study of composition,structure and elastic properties of boron nitride films deposited by magnetron and ion beam sputtering

Sputtering from hexagonal BN targets, using a conventional magnetron (MS) or ion beam (IBS), produces films consisting of both sp²- and sp³-bonded BN and BN_x. We present here the dependence of BN film composition, structure, morphology and elastic properties on the bias voltage (V_b) applied on the substrate in the case of MS, compared with those of IBS-deposited BN films. The optical properties and the composition of the BN films were examined by spectroscopic ellipsometry (SE), whereas the chemical bonding was identified by Fourier Transform IR SE. The films' structure, morphology and density were also examined by X-ray diffraction and reflectivity and transmission electron microscopy. The elastic properties of the films were studied by nanoindentation techniques. Significant differences were found in composition, chemical bonding and structure of films grown by MS at various bias voltages.     

Microstructure,hardness and toughness of boron carbide thin films deposited by pulse dc magnetron sputtering

Boron carbide thin films were deposited on (100) silicon substrates at ambient temperature via. pulse dc magnetron sputtering. Various frequency and duty cycles were applied to the hot-pressed B₄C target in order to understand their influence on the structure and mechanical properties of the B₄C films. X-ray Energy dispersive spectrum, Raman spectroscopy and Transmission electronic microscopy were used to characterize the composition and microstructure of the films. Nanoindenter was employed to measure the hardness and modulus. The film toughness was evaluated by a microindentation method. The results show that both pulse frequency and duty cycle significantly affect the B/C atomic ratio and then hardness and modulus in the boron carbide films. However, the amorphous structure of the films was maintained when the frequency and duty cycle changed. The maximum hardness of 29 GPa and modulus of 247 GPa combined with relative high toughness (3.3 MPa m^1/2) were achieved under 50 kHz frequency and 30% duty cycle. In addition, there was no evidence to prove that the graphite phase existed in the B₄C films although exceeded C concentration was detected.