S波段低插损FBAR陷波器的研制

该文介绍了一种单端口、端口阻抗50Ω的S波段薄膜体声波谐振器(FBAR)陷波器,其采用了梯形拓扑结构与外围匹配电路相结合的方式.对FBAR陷波器芯片的设计过程、工艺实现进行了说明.测试制备的FBAR陷波器,其陷波频段为2399～2412 MHz,陷波抑制达35 dBc;通带频率分别为1800～2300 MHz和2500...     

基于倒π型谐振器的双陷波微型超宽带滤波器设计

针对传统的超宽带滤波器设计尺寸偏大和陷波深度不足的问题,提出了一种基于倒π型谐振器的双陷波超宽带滤波器。通过在超宽带滤波器两端加载宽型开路枝节在通带内形成传输零点,并在滤波器上方耦合倒π型谐振器,实现通带内的双陷波特性。选用高介电常数的基板材料大幅度缩小滤波器的整体设计尺寸,实现微型化设计。测试结果表明,该滤波器通带范围为2.9～12.0 GHz,通带内插入损耗在1 dB以内,在5.76～6.14 GHz和7.82～8.45 GHz陷波深度分别达到了-20.6 dB和-31.6 dB。测试结果和仿真结果基本一致,说明该滤波器在通带内能够有效地避免无线局域网WLAN信号(5.725～5.850 GHz)和X波段卫星信号(7.900～8.395 GHz)的干扰,为平面型陷波超宽带滤波器的设计提供了新的思路。     

声表面波纵向耦合谐振滤波器通带特性研究

在理论方面,作者应用COM理论分析研究了纵向耦合谐振滤波器通带波纹大小和耦合换能器与输入/输出换能器间距离的关系。在工艺上,作者采用剥离工艺制作了相应的纵向耦合谐振滤波器,并给出了所设计的纵向耦合谐振滤波器频率响应的测试结果。实验测得样品滤波器中心频率为895 MHz,1 dB带宽40.5 MHz,阻带抑制达到47 dB,插入损耗3.8 dB,通带波纹小于0.9 dB。实验与理论分析比较一致。     

自适应陷波器在连续波引信噪声抑制中的应用

为提高连续波多普勒无线电引信在噪声干扰环境中的工作可靠性,分析了噪声干扰对连续波多普勒无线电引信的影响.根据连续波引信信号的单频率特点,将单频率自适应陷波器应用到引信中,用来对引信通带内的噪声干扰进行抑制,分析了噪声抑制原理,并对噪声抑制效果进行了仿真.仿真结果表明,信噪比为-10 dB时,利用单频率自适应陷波器仍然可...     

一种集成镜像抑制的低噪声放大器设计

为解决超外差接收机中镜像干扰的问题,采用了一种有源陷波滤波器(active notch-filter)来实现镜像抑制功能。并在此基础上设计了用于数字音频广播(Digital Audio Broadcast,DAB)系统的低噪声放大器。该LNA电路工作在L-band1.472GHz,,经过第一次变频到165MHz,其镜像频率为1.142GHz,有源陷波滤波器可提供超过55dB的镜像抑制度。整个LNA电路采用1.8V电源,消耗5mA电流,S11和S22分别为-22dB和-16dB,功率增益为21dB。噪声指数为1.45dB,输入P1db点为-25dBm。     

基于双光源的可调谐微波光子滤波器

提出了一种基于双光源与双相移光纤光栅(DPS- FBG)的可调谐微波光子滤波器。双光源经过相 位调制后,利用DPS-FBG的反射模式中的两超窄陷波分别对两相位调制光信号的边带进行抑 制,实现相 位调制至强度调制的转换。通过调节两光源的中心波长可以实现单通带与双通带之间的切换 ,实现单通带 的中心频率可调以及3dB带宽可调,实现双通带频率同时可调或者单独可调。建立了理论模 型并进行了数 值分析,最后通过实验进行了验证。实现了滤波器通带的3dB带宽由180MHz增加为319MHz,中心频率从1GHz到7GHz可调。     

国外简讯

由Siemens Matsushita公司生产的F4957型SAW滤波器,其3dB通带为10.6MHz,适用信道间隔为12MHz,插损为24dB.群延迟波纹为±25ns.残余边带宽度为750kHz.滤波器采用的外壳为SIP5L.体积为19.9mm×12mm×5.5mm.另由该公司在F4957基础上研制而成的F4962M型SAW滤波器,其3dB通带为11.6MHZ.信道间隔为12MHZ.插损值为26dB.群延迟波纹为±25ns,残余边带宽度为400kHz,封装外壳为SIP5K.体积为8.7mm×17.3mm×4mm.     

基于SIW技术的毫米波滤波器研究与设计

基于基片集成波导（substrate integrated waveguide,SIW）结构设计了两款四阶的耦合带通滤波器,使用三维全波电磁场仿真软件HFSS对设计的两款滤波器进行了仿真设计和优化.由仿真结果分析得出,两款滤波器的工作频率均位于毫米波频段.第一款SIW滤波器实现了切比雪夫型响应,中心频率为20 GHz,带宽为2 GHz,通带内的插入损耗低于1.5 dB,回波损耗低于-20 dB,在阻带中对信号的衰减程度可以达到50 dB.第二款SIW滤波器实现了准椭圆函数型的响应,中心频率为29.1 GHz,带宽为300 MHz,通带内的插入损耗低于1 dB,回波损耗低于-20 dB,在通带到阻带的过渡中实现了两个陷波点.仿真结果表明,在毫米波滤波器设计中引入SIW结构,有利于优化滤波器尺寸,得到较好的滤波器性能指标,是毫米波滤波器发展的一个重要方向.     

脊波导变换在低噪声放大器中的应用

本文主要介绍采用脊波导实现波导-微带过渡的低噪声放大器的结构和脊波导变换器的设计过程。放大器基片直接安装在波导管内,脊波导变换器采用具有一定精度的近似公式进行计算。以CX591C型FET作为有源器件、中心频率为6.2GHz的两级脊波导变换低噪声放大器,带宽达1000MHz,500MHz通带内,增益为20±0.25dB,噪声系数小于1.8dB。     

横向耦合谐振滤波器寄生模式抑制的研究

该文应用耦合模理论,重点研究了几个关键因素对横向耦合谐振滤波器高次模式对应旁瓣相对于主通带相对衰减量的影响.这几个关键因素包括相对膜厚、反射栅与换能器周期比、换能器间汇流条宽度等.研究表明,该文在设计频率为159.2 MHz的横向耦合谐振滤波器时,对高次模式引起的旁瓣作了抑制处理,该文给出了此滤波器的计算模拟结果和实验测试数据.实验器件匹配后具有高阻带抑制(通带外抑制达50 dB)、低插损(2.9 dB)和平坦的通带(通带波纹小于0.3 dB),1 dB带宽为130 kHz.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks