Ultraviolet Triggered Switchable Mirrors

Trivalent rare earth hydrides stabilized in thin film form demonstrate spectacular optical and electronic properties. A thin film of YH_x or LaH_x can be transformed rapidly from metal to insulator, from shiny mirror to transparent window, simply by changing the surrounding hydrogen gas pressure or an electrolytic cell potential at room temperature (RT). At low temperatures, in‐situ doping is not possible in this way as hydrogen cannot diffuse. However, our finding of persistent photoconductivity under ultraviolet illumination permits tuning through the T = 0 metal–insulator transition and reveals the important role played by strong electron correlations. We discuss the optical, electronic, magnetic, and structural properties of switchable mirrors from both the technological and scientific perspectives.     

A 1D Vanadium Dioxide Nanochannel Constructed via Electric‐Field‐Induced Ion Transport and its Superior Metal–Insulator Transition

Nanoscale manipulation of materials' physicochemical properties offers distinguished possibility to the development of novel electronic devices with ultrasmall dimension, fast operation speed, and low energy consumption characteristics. This is especially important as the present semiconductor manufacturing technique is approaching the end of miniaturization campaign in the near future. Here, a superior metal–insulator transition (MIT) of a 1D VO₂ nanochannel constructed through an electric‐field‐induced oxygen ion migration process in V₂O₅ thin film is reported for the first time. A sharp and reliable MIT transition with a steep turn‐on voltage slope of <0.5 mV dec^?1, fast switching speed of 17 ns, low energy consumption of 8 pJ, and low variability of <4.3% is demonstrated in the VO₂ nanochannel device. High‐resolution transmission electron microscopy observation and theoretical computation verify that the superior electrical properties of the present device can be ascribed to the electroformation of nanoscale VO₂ nanochannel in V₂O₅ thin films. More importantly, the incorporation of the present device into a Pt/HfO₂/Pt/VO₂/Pt 1S1R unit can ensure the correct reading of the HfO₂ memory continuously for 10⁷ cycles, therefore demonstrating its great possibility as a reliable selector in high‐density crossbar memory arrays.     

Influence of a Finite Tc on Enhanced Superconductivity Near the Metal/Insulator Transition

We adapted the BCS equation for T _c so that it applies to disordered conductors near the metal/insulator transition (MIT). The resulting expression for T _c as a function of the conductivity accounted quite well for several disparate classes of superconducting materials near the MIT [disordered metals, oxide conductors (including high-T _c superconductors), semiconducting materials, organic conductors, and C₆₀]. This function, however, was applicable only to situations for which T _c was zero in the pure limit—which was the case for the data chosen. This paper extends the model to the nonzero case and compares the predictions to the appropriate data.     

Atomic-Scale Metal–Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

The metal–insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO₃ ultrathin films is reported. Uniform and effective termination engineering at the SrRuO₃(001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO₂, a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO₃ monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.     

Photoconductivity in Manganites

We report two types of photoconductivity effects observed by illumination of oxygen deficient manganites thin films with UV or visible light. One is the persistent photoconductivity effect observed at low temperature (T < 30 K) when the thin film is in the metallic state. This effect is analog to the persistent photoconductivity observed in the high T_c superconductors particularly in oxygen deficient YBaCuO thin films. The other type of effect is a photo-induced transition to metallic state at temperatures T < 100 K observed in Pr_2/3Sr_1/3MnO₃ thin film which stays always in the semiconducting state in the darkness. This photo induced metallic transition from a semiconducting state leads to a non persistent colossal photoconductivity (several orders of magnitude of decrease of the resistivity).     

MXenes for Plasmonic Photodetection

MXenes have recently shown impressive optical and plasmonic properties associated with their ultrathin‐atomic‐layer structure. However, their potential use in photonic and plasmonic devices has been only marginally explored. Photodetectors made of five different MXenes are fabricated, among which molybdenum carbide MXene (Mo₂CT_x) exhibits the best performance. Mo₂CT_x MXene thin films deposited on paper substrates exhibit broad photoresponse in the range of 400–800 nm with high responsivity (up to 9 A W^?1), detectivity (≈5 × 10¹¹ Jones), and reliable photoswitching characteristics at a wavelength of 660 nm. Spatially resolved electron energy‐loss spectroscopy and ultrafast femtosecond transient absorption spectroscopy of the MXene nanosheets reveal that the photoresponse of Mo₂CT_x is strongly dependent on its surface plasmon‐assisted hot carriers. Additionally, Mo₂CT_x thin‐film devices are shown to be relatively stable under ambient conditions, continuous illumination and mechanical stresses, illustrating their durable photodetection operation in the visible spectral range. Micro‐Raman spectroscopy conducted on bare Mo₂CT_x film and on gold electrodes allowing for surface‐enhanced Raman scattering demonstrates surface chemistry and a specific low‐frequency band that is related to the vibrational modes of the single nanosheets. The specific ability to detect and excite individual surface plasmon modes provides a viable platform for various MXene‐based optoelectronic applications.     

Giant Polarization Sustainability in Ultrathin Ferroelectric Films Stabilized by Charge Transfer

Ferroelectricity is generally deteriorated or even vanishes when the ferroelectric films are downsized to unit cell scale. To maintain and enhance the polarization in nanoscale ferroelectrics are of scientific and technological importance. Here, giant polarization sustainability is reported in a series of ultrathin PbTiO₃ films scaled down to three unit cells grown on NdGaO₃(110) substrates with La_0.7Sr_0.3MnO₃ as bottom electrodes. Atomic mappings via aberration‐corrected scanning transmission electron microscopy demonstrate the robust ferroelectricity for the sub‐10 nm thick film. For the 1.2 nm thick film, the polarization reaches ≈50 µC cm^?2. The 2 nm thick film possesses a polarization as high as the bulk value. The films ranging from 10 to 35 nm display a giant elongation of out‐of‐plane lattice parameter, which corresponds to a polarization of 100 µC cm^?2, 20% larger than that of the bulk PbTiO₃. The giant enhancement of polarization in the present films is proposed to result from the charge transfer at the La_0.7Sr_0.3MnO₃/PbTiO₃ interface, as supported by the anomalous decrease of Mn valence measured from X‐ray photoelectron spectroscopy. These results reveal the significant role of charge transfer at interfaces in improving large polarizations in ultrathin ferroelectrics and are meaningful for the development of future electronic devices.     

Strain-Induced First-Order Magnetic Phase Transition in Epitaxial Sm<Subscript>0.35</Subscript>Pr<Subscript>0.15</Subscript>Sr<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> Thin Film

Epitaxial Sm_0.35Pr_0.15Sr_0.5MnO₃ thin films were deposited on LaAlO₃ (LAO, (001)), SrTiO₃ (STO, (001)), and (La_0.18Sr_0.82)(Al_0.59Ta_0.41)O₃ (LSAT, (001)) single-crystalline substrates by using pulsed laser deposition technique. In order to examine the strain effect on electronic and magnetic properties, films were studied by X-ray diffraction, electrical resistivity, and dc magnetization measurements. The film grown on LAO substrate is under compressive strain, and it undergoes ferromagnetic → paramagnetic transition at Curie temperature (T _C) of ～ 165 K and metal → insulator transition at ～ 107 K. The films grown on STO and LSAT substrates are under tensile strain and have T _C of ～ 120 and 130 K, respectively, and show metal → insulator transition at ～ 145 and 137 K, respectively. At T < T _C, the zerofield and fieldcooled magnetization curves of all the films show a huge bifurcation. In the case of films on STO and LSAT substrates, hysteresis is also observed in fieldcooled cooling and warming magnetization vs. temperature measurement protocols at low magnetic field. All the signatures of the firstorder magnetic phase transition are absent in the case of film on LAO substrate. The occurrence and absence of firstorder magnetic phase transition in films on LAO, STO, and LSAT substrates, respectively, have been well explained through the substrateinduced film lattice strain.     

Film Flip and Transfer Process to Enhance Light Harvesting in Ultrathin Absorber Films on Specular Back‐Reflectors

Optical interference is used to enhance light–matter interaction and harvest broadband light in ultrathin semiconductor absorber films on specular back‐reflectors. However, the high‐temperature processing in oxygen atmosphere required for oxide absorbers often degrades metallic back‐reflectors and their specular reflectance. In order to overcome this problem, a newly developed film flip and transfer process is presented that enables high‐temperature processing without degradation of the metallic back‐reflector and without the need of passivation interlayers. The film flip and transfer process improves the performance of photoanodes for photoelectrochemical water splitting comprising ultrathin (<20 nm) hematite (α‐Fe₂O₃) films on silver–gold alloy (90 at% Ag–10 at% Au) back‐reflectors. Specular back‐reflectors are obtained with high reflectance below hematite films, which is necessary for maximizing the productive light absorption in the hematite film and minimizing nonproductive absorption in the back‐reflector. Furthermore, the film flip and transfer process opens up a new route to attach thin film stacks onto a wide range of substrates including flexible or temperature sensitive materials.     

Annealing effect on the characteristics of La0.67Sr0.33MnO3 polycrystalline thin films produced by the sol–gel dip-coating process

The effect of annealing temperature on selected characteristics of polycrystalline La_0.67Sr_0.33MnO₃ films, which have been produced on quartz substrates, was investigated. X-Ray powder diffraction patterns showed that the phase formation started at 873 K and all the films had perovskite structure. By increasing the annealing temperature, the lattice parameters were decreased. Scanning electron microscope indicated that the film thicknesses were approximately 3 μm and the average grain size of the samples varied between 30–100, 50–110, 70–120, and 100–150 nm for films annealed at 873, 973, 1,073, and 1,173 K, respectively. All the films showed a paramagnetic–ferromagnetic (T_C) and metal–insulator (T_IM) phase transition. The T_C indicated a small variation [from 131 K (S4) to 124 K (S1)] as a function of annealing temperature, whereas the T_IM went down from 212 K (S4) to 110 K (S1), a strong decrease of 102 K. A colossal magneto resistance with magneto resistance ratios of 130, 139, 156, and 163% were observed near T_C and at 6 T magnetic field.     

Dielectric properties of Al V2O5 Al thin film sandwich structures

Vanadium pentoxide thin films were prepared by the electron beam evaporation technique onto Corning 7059 glass substrates kept at a temperature of T_s=423 K. The dielectric properties of Al V₂O₅ Al thin film sandwich structures were studied in the frequency range 0.1–100 kHz and in the temperature range 125–450 K. Both the dielectric constant and the dielectric loss factor were found to depend on frequency and temperature. The activation energy obtained for the dielectric relaxation process was about 0.36 eV.     

Growth and Characterization of YBCO Thin Films by Sequential Deposition and Annealing

A novel thin film growth procedure, sequential deposition and annealing (SDA), which contains the advantages of both in situ and ex situ procedures, was proposed. Y₁Ba₂Cu₃O_{7 – x} (YBCO) high temperature superconducting thin films were grown and characterized by the SDA procedure. Purely c-axis-oriented YBCO thin films with no foreign phases and other oriented grains were successfully prepared. The superconducting transition properties of SDA-grown YBCO thin films were measured by measurement of inductance and resistance. The inductance measurements gave a T _c ^onset of 85 K and a T _c of 5 K. The resistance measurements gave a T _c ^onset of 90 K and a T _c of 5 K. Atomic force microscopy studies showed that SDA-grown YBCO thin films had micrometer-size grains surrounded by many nanometer-size grains. The nanometer-size grains in SDA-grown YBCO thin films are responsible for degradation of superconducting transition properties.     

Superconductivity in transparent zinc-doped In2O3 films having low carrier density

Abstract

Thin polycrystalline zinc-doped indium oxide (In₂O₃–ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0x 0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5T 300 K, H6 Tfor 350 nm films annealed in air. Films with 0x0.03 show the superconducting resistive transition. The transition temperature T_c is below 3.3 K and the carrier density n is about 10²⁵–10²⁶ m^?3. The annealed In₂O₃–ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H_c2 (T) for the film with x = 0.01. From the slope of dH_c2 /dT, we obtain the coherence length ξ (0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.     

The Influence of Bi Doping on the In Situ Growth of TlBa2Ca2Cu3O9 High-Tc Films

The in situ process—laser ablation in combination with thermal evaporation of Tl₂O—has turned out to be a preparation method for single-phase and epitaxial TlBa₂Ca₂Cu₃O₉ (1223) thin films with T _c values up to 109 K. It was found by several groups that a partial substitution of Tl by Bi simplifies the phase development of the 1223 compound in the usual two-step process. We have investigated the influence of the Bi doping on the in situ growth. X-ray measurements show that the films consisted mainly of the 1223 compound. In 300-nm thin films there was no evidence of a Bi amount in the crystal structure, but thinner films (80 nm) show a small amount of Bi. We concluded that Bi doping supports the phase development of the 1223 compound only in an early stage of the film growth. The Bi-doped films have higher T _c values up to 114 K, higher j _c values up to 6 × 10⁵ A/cm² (77 K, 0 T), and lower surface resistances of 56 m (77 K, 87 GHz) than the undoped films.     

A Chemical Route to Monolithic Integration of Crystalline Oxides on Semiconductors

This work demonstrates the growth of crystalline SrTiO₃ (STO) directly on germanium via a chemical method. After thermal deoxidation, the Ge substrate is transferred in vacuo to the deposition chamber where a thin film of STO (2 nm) is deposited by atomic layer deposition (ALD) at 225 °C. Following post‐deposition annealing at 650 °C for 5 min, the STO film becomes crystalline with epitaxial registry to the underlying Ge (001) substrate. Thicker STO films (up to 15 nm) are then grown on the crystalline STO seed layer. The crystalline structure and orientation are confirmed via reflection high‐energy electron diffraction, X‐ray diffraction, and transmission electron microscopy. Electrical measurements of a 15‐nm thick epitaxial STO film on Ge show a large dielectric constant (k ≈ 90), but relatively high leakage current of ≈10 A/cm² for an applied field of 0.7 MV/cm. To suppress the leakage current, an aluminum precursor is cycled during ALD growth to grow crystalline Al‐doped STO (SrTi_1‐x­Al_xO_3‐δ) films. With sufficient Al doping (≈13%), the leakage current decreases by two orders of magnitude for an 8‐nm thick film. The current work demonstrates the potential of ALD‐grown crystalline oxides to be explored for advanced electronic applications, including high‐mobility Ge‐based transistors.     

Tantalum Thin-Film Superconducting Transition Edge Thermometers

Sputter deposited Ta thin films make excellent superconducting transition edge temperature sensors. Depending on film thickness, their transition temperature, T_c, ranges from 4.4K to as least as low as 0.5K. A figure of merit of 50K^–1 is easily achieved. The films are mechanically extremely strong, and at room temperature show minimal aging. Using a simple heat treatment technique, T_c can be tuned to the desired operating range.     

Effect of electron beam irradiation on structure and properties of SiCN thin films prepared by plasma assisted radio frequency magnetron sputtering

Silicon carbon nitride thin films were deposited on Si (100) substrate at room temperature by plasma assisted radio frequency magnetron sputtering. The bonding structure and properties of SiCN films irradiated by pulsed electron beams were studied by means of X-ray photoelectron spectroscopy and nano-indentation. The results showed that electron beam irradiation had a great effect on the structure and property of the films. Under sputtering gas pressure of 3.7 Pa, a transition from the (Si,C)N_x bonded structure to the (Si,C)₃N₄ bonded structure was found in the SiCN thin film with electron beam irradiation. At sputtering gas pressure of 6.5 Pa, the enhancement of hardness in the SiCN film after treatment with electron beam irradiation resulted from the promotion of the sp³-hybridization of carbons bonds.     

Size quantization effects in optical and electrical properties of II–VI semiconductor films in nanocrystalline form

The electrical properties of CdTe and optical properties of ZnS in nanocrystalline thin film form are studied with a view to have a clearer understanding of the optical processes and the carrier transport mechanisms in nanocrystalline II–VI semiconductors, in general. Nanocrystalline ZnS and CdTe films were deposited by magnetron sputtering of respective targets in argon plasma. The optical absorption data of nanocrystalline ZnS films (thickness 10–40 nm) could be explained by the combined effects of phonon and inhomogeneity broadening along with optical loss due to light scattering at the nanocrystallites. The conductivity of CdTe (grain size within 4–4·7 nm) showed (T ₀/T) ^p dependence withp ∼ 0·5 indicating the presence of a Coulomb gap near the Fermi level. The width of the Coulomb gap varied within 0·02–0·04 eV depending on the deposition condition. The existing theoretical models were used for estimating hopping energy (0·02–0·04 eV) and hopping distance (2·8–5·1 nm) in nano CdTe films.     

Growth and structure of electron beam evaporated V2O5 thin films

The growth, structure and room temperature electrical conductivity of electron beam evaporated V₂O₅ thin films were studied in detail as a function of deposition temperature. The films deposited at T_s≈553 K and subsequently annealed in oxygen atmosphere at 693 K exhibited orthorhombic layered structure.     

Some physical properties of evaporated thin films of antimony trisulphide

The optical properties of thin films of red Sb₂S₃ prepared by vacuum evaporation on amorphous substrates were determined from transmission measurements. The variation of the extinction coefficient,K, shows structures at energies of 4.4 and 5.4 eV. The band gap was found to be 1.7 eV for film of thickness 56 nm, and increase with thickness. The interpretation of structure was inferred from transmission electron microscopy and X-ray diffraction for thin films of antimony trisulphide. The investigated film thicknesses were from 46 to 64 nm.