共查询到20条相似文献，搜索用时 15 毫秒
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Xiao Sun Li Lin Luzhao Sun Jincan Zhang Dingran Rui Jiayu Li Mingzhan Wang Congwei Tan Ning Kang Di Wei H. Q. Xu Hailin Peng Zhongfan Liu 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(3)
Future applications of graphene rely highly on the production of large‐area high‐quality graphene, especially large single‐crystalline graphene, due to the reduction of defects caused by grain boundaries. However, current large single‐crystalline graphene growing methodologies are suffering from low growth rate and as a result, industrial graphene production is always confronted by high energy consumption, which is primarily caused by high growth temperature and long growth time. Herein, a new growth condition achieved via ethane being the carbon feedstock to achieve low‐temperature yet rapid growth of large single‐crystalline graphene is reported. Ethane condition gives a growth rate about four times faster than methane, achieving about 420 µm min?1 for the growth of sub‐centimeter graphene single crystals at temperature about 1000 °C. In addition, the temperature threshold to obtain graphene using ethane can be reduced to 750 °C, lower than the general growth temperature threshold (about 1000 °C) with methane on copper foil. Meanwhile ethane always keeps higher graphene growth rate than methane under the same growth temperature. This study demonstrates that ethane is indeed a potential carbon source for efficient growth of large single‐crystalline graphene, thus paves the way for graphene in high‐end electronical and optoelectronical applications. 相似文献
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Graphene: Low‐Temperature and Rapid Growth of Large Single‐Crystalline Graphene with Ethane (Small 3/2018) 
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下载免费PDF全文 Xiao Sun Li Lin Luzhao Sun Jincan Zhang Dingran Rui Jiayu Li Mingzhan Wang Congwei Tan Ning Kang Di Wei H. Q. Xu Hailin Peng Zhongfan Liu 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(3)
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Zhiheng Wu Yongshang Zhang Yonglong Shen Wei Zhang Guosheng Shao 《Advanced Materials Interfaces》2020,7(18)
Vertically standing graphene (VSG) films have demonstrated various appealing functionalities on the basis of excellent electrical/thermal conductivity and electrochemical/catalytic properties, owing to their unique morphology, preferable orientation of the basal planes, and adequate defects as effective catalytic sites. Most fabrication processes for VSG suffer from the disadvantage of high processing temperature, difficulty in structural control, or poor scalability, which limits their many potential applications. Herein, a scalable high‐flux plasma‐enhanced chemical vapor deposition system is designed, with streamlined magnetic field to enable high and uniform ion density over a spatially extended plasma flux, which facilitates large‐area deposition of structurally tuned VSG independent of substrate materials without additional heating, for the first time. The orientation, density, and the degree of order for the as‐fabricated VSG can be tailored through adjusting the plasma environment, which in turn affects crystallization mechanisms. Such low‐temperature synthesized VSG films are demonstrated as high‐performance anode in sodium ion batteries, achieving a high capacity retention of 86% after 2000 cycles at a current density of 1 A g−1. It is expected that the current VSG films would have great potential for electrochemical applications that request catalytic sites together with favorable conductivity for ions and electrons. 相似文献
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合成了液态碳硅烷并对其结构进行了分析;采用化学气相沉积工艺,以自制的液态碳硅烷为先驱体,分别在850℃和900℃的较低温度下制得了SiC粉体,并对产物进行了IR、XRD和SEM分析.结果表明,850℃产物中含有未分解完全的有机基团,900℃产物为较纯的部分结晶的纳米SiC粉体,粒度为50～70nm. 相似文献
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Using a shadowed pulsed laser deposition allows us to reduce the number of droplets on the YBa2Cu3O7–x
film surface obtained by pulsed laser deposition method. In this study, we present a new modification of pulsed laser deposition method: a shadowed off-axis pulsed laser deposition. The substrate surface lies in the plain defined by the laser beam. A rectangular shadow mask located between target and substrate reduce the quantity of large particles deposited from the diffusion flow. Such geometry allows us to carry out the laser plume scanning on the target surface for simultaneous one-step double-sided deposition films with a droplet-free surface. Both films had good superconducting properties. 相似文献
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通过化学共沉淀法制备了La0.67Sr0.33MnO3:Ag0.08 (LSMO:Ag0.08)多晶材料, 然后采用脉冲激光沉积(PLD)技术在LaAlO3 (LAO)倾斜衬底上制备了LSMO:Ag0.08薄膜。研究了衬底温度和生长氧压对薄膜结构、电输运特性及激光感生电压(LIV)效应的影响。结果表明: 当衬底温度为790℃、生长氧压为45 Pa时, 薄膜具有最大峰值电压(Up)、优值(Fm)和各向异性Seebeck系数(ΔS); 在优化的衬底温度和生长氧压条件下, 长程Jahn-Teller协变引起ΔS数值提高, 这是LIV信号增强的主要原因。 相似文献
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沉积温度和退火处理对脉冲激光沉积的 ZnO∶Al 膜性能的影响 总被引：1，自引：2，他引：1
利用脉冲激光沉积法制备了ZnO∶Al透明导电薄膜.通过对膜的霍尔系数测量及 AFM、XRD分析,详细研究了温度和退火处理对薄膜结构、表面形貌及光电性能的影响.结果表明沉积温度影响膜的电学、光学性能和膜的结晶状况.制备的薄膜均具有ZnO(002)择优取向的多晶膜.在240～310℃沉积的薄膜具有最低的电阻率,其值为6.1×10-4Ω·cm,在240℃沉积的薄膜在氩气中退火薄膜的电阻率下降为4. 7×10-4Ω·cm.所有薄膜在可见光区的平均透过率均达到了90%以上. 相似文献
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用紫外脉冲激光淀积方法在Pt／TiO2／SiO2／Si(001)衬底上制备了La1-xSrxCoO3／Pb(Ta0.05Zr0.48Ti0.47)O3(PTZT)／La1-xSrxCoO3异质结构薄膜。发现底电极La0.25Sr0.75CoO3可以诱导PTZT薄膜沿(001)方向取向生长。在500kHz和5V的工作电压下铁电电容器La0.25Sr0.75CoO3/PTZT／La0.25Sr0.75CoO3经过5×1010次反转之后,仍保持其初始电极化的96％。此异质结构横截面的扫描电镜照片表明界面上没有明显的因化学反应导致的第二相存在。 相似文献
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Yonghoon Jung;Kyung Tak Yoon;Junhyoung Park;Hanseul Choi;Seongheon Kim;Hee Dong Kwak;Seong Ho Cho;Taehoon Kim;Jieun Lee;Yun Seog Lee; 《Small (Weinheim an der Bergstrasse, Germany)》2024,20(52):2405229
An electron transport layer (ETL) for highly efficient perovskite solar cells (PSCs) should exhibit superior electrical transport properties and have its band levels aligned with interfacing layers to ensure efficient extraction of photo-generated carriers. Nitrogen-doped TiO2 (TiO2:N) is considered a promising ETL because it offers higher electrical conductivity compared to conventional ETLs made from spray-pyrolyzed TiO2. However, the application of highly doped TiO2:N in PSCs is often limited by the misalignment of energy band levels with adjacent layers and reduced optical transparency. In this study, a novel approach is introduced to enhance the charge transport characteristics and accurately align the electronic band alignment of TiO2:N layer through nanoscale doping level grading, achieved through the pulsed laser deposition (PLD) technique. The TiO2:N ETL with a graded doping profile can combine characteristics of both highly doped and lightly doped phases on each side. Furthermore, a nanoscale doping gradation, employing an ultrathin sub-layer structure with graded doping levels, creates a smoothly cascading band-level alignment that bridges the adjacent layers, enhancing the transport of photo-generated carriers. Consequently, this method leads to a substantial increase in the power conversion efficiency (PCE), exceeding 22%, which represents a relative improvement of 11% compared to traditional spray-pyrolyzed TiO2-based PSCs. 相似文献
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利用脉冲激光法制备了ZnO∶Al透明导电膜。通过对膜进行霍尔系数测量及SEM、XRD测试分析 ,详细研究了沉积时的基片温度、氧分压强对膜的透光率和电阻率的影响。结果表明 :基片温度、氧分压强影响着膜的电学、光学性能和膜的结晶状况。从电学分析看出 :基片温度从 2 0 0℃升到 30 0℃过程中 ,膜的载流子浓度、透光率和光隙能相应增大。在氧分压强为0Pa、基片温度为 4 0 0℃下沉积的膜 ,其电阻率具有较低值 ,且在可见光区其透光率约为 90 %。 相似文献
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脉冲激光薄膜制备技术 总被引：14，自引：2，他引：14
脉冲激光薄膜沉积是近年来受到普遍关注的制膜新技术。简要介绍了脉冲激光薄膜沉积技术的物理原理、独具的特点和研究发展动态,并介绍了采用脉冲激光薄膜沉积技术制备硅基纳米PtSi薄膜的结果 相似文献