Atomic-Level and Modulated Interfaces of Photocatalyst Heterostructure Constructed by External Defect-Induced Strategy: A Critical Review

Despite the existence of numerous photocatalyst heterostructures, their separation efficiency and charge flow precision remain low due to the poor study on interfacial properties. The photocatalysts with confined defects can effectively control the photogenerated carrier migration, but the metastability of such defects considerably decreases the photocatalyst stability. Meanwhile, the introduction of defective region can increase the coordinative unsaturation and delocalize local electrons to promote their interactions with the molecules/ions in that region. The selective growth of modulated heterogeneous interface by defect-induced strategy may not only increase the stability of defective structures, but also enhance the migration of interfacial charges. Using this method, photocatalytic heterostructures with low contact resistances and intimate interfaces are constructed to achieve the optimal charge migration in terms of efficiency and accuracy. In this work, the point, linear, and planar heterogeneous interfaces and related defect engineering techniques are discussed. Particularly, it is focused on the external, defect-induced interfacial heterogeneities with various spatial and dimensional configurations, which exhibit modulated and controllable interfacial properties. Furthermore, the main aspects of fabricating photocatalyst heterostructures by the defect-induced strategy, including the i) controllable generation of defects, ii) advanced characterization methods, and iii) elaborate construction of the minimal interface, are described.     

STO/YBCO薄膜的制备及介电性能研究

采用脉冲激光沉积技术,在(100)LaAlO3单晶基片上生长SrTiO3/Y1Ba2Cu3O7-x(STO/YBCO)多层薄膜。XRD分析表明:YBCO薄膜和STO薄膜均为C轴取向,STO(002)/YBCO(006)衍射峰摇摆曲线半高宽为0.73°。AFM分析表明,STO/YBCO多层薄膜表面平整、均匀,在77K,100kHz的测试条件下,STO薄膜介电损耗tgδ<10-2,在53.6kV/cm电场作用下,介电常数的相对变化为38%。     

Simultaneous Fabrication of Very High Aspect Ratio Positive Nano‐ to Milliscale Structures

A simple and inexpensive technique for the simultaneous fabrication of positive (i.e., protruding), very high aspect (>10) ratio nanostructures together with micro‐ or millistructures is developed. The method involves using residual patterns of thin‐film over‐etching (RPTO) to produce sub‐micro‐/nanoscale features. The residual thin‐film nanopattern is used as an etching mask for Si deep reactive ion etching. The etched Si structures are further reduced in size by Si thermal oxidation to produce amorphous SiO₂, which is subsequently etched away by HF. Two arrays of positive Si nanowalls are demonstrated with this combined RPTO‐SiO₂‐HF technique. One array has a feature size of 150 nm and an aspect ratio of 26.7 and another has a feature size of 50 nm and an aspect ratio of 15. No other parallel reduction technique can achieve such a very high aspect ratio for 50‐nm‐wide nanowalls. As a demonstration of the technique to simultaneously achieve nano‐ and milliscale features, a simple Si nanofluidic master mold with positive features with dimensions varying continuously from 1 mm to 200 nm and a highest aspect ratio of 6.75 is fabricated; the narrow 200‐nm section is 4.5 mm long. This Si master mold is then used as a mold for UV embossing. The embossed open channels are then closed by a cover with glue bonding. A high aspect ratio is necessary to produce unblocked closed channels after the cover bonding process of the nanofluidic chip. The combined method of RPTO, Si thermal oxidation, and HF etching can be used to make complex nanofluidic systems and nano‐/micro‐/millistructures for diverse applications.     

Colloid‐Interface‐Assisted Laser Irradiation of Nanocrystals Superlattices to be Scalable Plasmonic Superstructures with Novel Activities

High‐efficient charge and energy transfer between nanocrystals (NCs) in a bottom‐up assembly are hard to achieve, resulting in an obstacle in application. Instead of the ligands exchange strategies, the advantage of a continuous laser is taken with optimal wavelength and power to irradiate the film‐scale NCs superlattices at solid–liquid interfaces. Owing to the Au‐based NCs' surface plasmon resonance (SPR) effect, the gentle laser irradiation leads the Au NCs or Au@CdS core/shell NCs to attach each other with controlled pattern at the interfaces between solid NCs phase and liquid ethanol/ethylene glycol. A continuous wave 532 nm laser (6.68–13.37 W cm^?2), to control Au‐based superlattices, is used to form the monolayer with uniformly reduced interparticle distance followed by welded superstructures. Considering the size effect to Au NCs' melting, when decreasing the Au NCs size to ≈5 nm, stronger welding nanostructures are obtained with diverse unprecedented shapes which cannot be achieved by normal colloidal synthesis. With the help of facile scale‐up and formation at solid–liquid interfaces, and a good connection of crystalline between NCs, the obtained plasmonic superstructured films that could be facilely transferred onto different substrates exhibit broad SPR absorption in the visible and near‐infrared regime, enhanced electric conductivities, and wide applications as surface enhanced Raman scattering (SERS)‐active substrates.     

Perpendicular exchange bias in IrMn/Pt/[Co/Pt]3 multilayers with cone magnetization

The perpendicular exchange bias and magnetic anisotropy were investigated in IrMn/Pt/[Co/Pt]₃ multilayers through the analysis of in-plane and out-of-plane magnetization hysteresis loops. A phenomenological model was used to simulate the in-plane curves and the effective perpendicular anisotropies were obtained employing the area method. The canted state anisotropy was introduced by taking into account the first and second uniaxial anisotropy terms of the ferromagnet with the corresponding uniaxial anisotropy direction allowed to make a nonzero angle with the film's normal. This angle, obtained from the fittings, was of approximately 15° for IrMn/[Co/Pt]₃ film and decreases with the introduction of Pt in the IrMn/Pt/ [Co/Pt]₃ system, indicating that the Pt interlayer leads to a predominant perpendicular anisotropy. A maximum of the out-of-plane anisotropy was found between 0.5 and 0.6 nm of Pt, whereas a maximum of the perpendicular exchange bias was found at 0.3 nm. These results are very similar to those obtained for IrMn/Cu/[Co/Pt]₃ system; however, the decrease of the exchange bias with the spacer thickness is more abrupt and the enhacement of the perpendicular anisotropy is higher for the case of Cu spacer as compared with that of Pt spacer. The existence of a maximum in the perpendicular exchange bias as a function of the Pt layer thickness was attributed to the predominance of the enhancement of exchange bias due to more perpendicular Co moment orientation over the exponential decrease of the ferromagnetic/antiferromagnetic exchange coupling and, consequently, of the exchange-bias field.     

Multilayer PZT 95/5 Antiferroelectric Film Energy Storage Devices with Giant Power Density

A new type of energy storage devices utilizing multilayer Pb(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ films is studied experimentally and numerically. To release the stored energy, the multilayer ferroelectric structures are subjected to adiabatic compression perpendicular to the polarization direction. Obtained results indicate that electrical interference between layers (10–120 layers) during stress wave transit through the structures has an effect on the generated current waveforms, but no impact on the released electric charge. The multilayer films undergo a pressure‐induced phase transition to antiferroelectric phase at 1.7 GPa adiabatic compression and become completely depolarized, releasing surface screening charge with density equal to their remnant polarization. An energy density of 3 J cm^?3 is successfully achieved with giant power density on the order of 2 MW cm^?3, which is four orders of magnitude higher than that of any other type of energy storage device. The outputs of multilayer structures can be precisely controlled by the parameters of the ferroelectric layer and the number of layers. Multilayer film modules with a volume of 0.7 cm³ are capable of producing 2.4 kA current, not achievable in electrochemical capacitors or batteries, which will greatly enhance the miniaturization and integration requirements for emerging high‐power applications.     

BST/BZT/BST多层薄膜结构与性能研究

利用脉冲激光沉积法在LaNiO3/LaAlO3(001)基片上生长了Ba0.6Sr0.4TiO3(BST)和Ba(Zr0.2Ti0.8)O3(BZT)单层薄膜,以及Ba(Zr0.2Ti0.8)O3/Ba0.6Sr0.4TiO3/Ba(Zr0.2Ti0.8)O3(BZT/BST/BZT)多层薄膜.X射线衍射(XRD)分析发现,BST、BZT和LNO薄膜都具有高度的(00l)取向.原子力显微镜(AFM)显示三种样品表面光滑无裂纹,晶粒尺寸和表面粗糙度相当.电容测试表明,相对BST、BZT单层薄膜,多层薄膜具有最大的品质因数42.07.表明多层薄膜在微波应用中具有很大的潜力.     

Multifunctional FeCo/TiN Multilayer Thin Films with Combined Magnetic and Protective Properties

Coatings with thicknesses ranging from a few nanometer up to several micrometer produced by physical vapor deposition (PVD) processes have been established in engineering technologies since the early 1980s. In particular, magnetron sputtered wear resistance coatings are industrially established and capable to enhance tool lifetimes significantly. However, in cases where optical inspection of a coating in use is not possible, an intrinsic sensor function of the film would be beneficial. Therefore, the development of wear resistant coatings with an integrated sensor functionality based on the insertion of a magnetoelastic ferromagnetic phase is suggested. In combination with appropriate read‐out electronics such a film system would be ready for online monitoring of the coatings' actual state (e.g., strain, temperature, volume loss). This paper focuses on the development of wear resistance coatings which simultaneously supply beneficial mechanical properties as well as ferromagnetic properties optimized for online non‐contact read‐out applications. Multilayer coatings obtained through alternate stacking of magnetron sputtered TiN and FeCo layers with a nominal total thickness of 1000 nm were produced as a model system meeting the above conditions. The bilayer period was varied down to 2.6 nm while the individual layer thickness ratio t_TiN/t_FeCo was determined by the deposition rates and maintained constant at a value of about 3/1. The films were vacuum annealed ex situ in a static magnetic field subsequent to the deposition. The constitution of the as‐deposited and annealed coatings as well as their mechanical (nanohardness, Young's modulus) and magnetic properties (magnetization hysteresis, frequency‐dependent permeability) are described. Finally, the suitability of the coatings for the use in remote‐interrogable wear sensor applications is briefly discussed.     

Ba0.5Sr0.5 TiO3薄膜、Ba0.1Sr0.9 TiO3/YBa2 Cu3O7-δ异质薄膜的制备及介电性能研究

铁电钛酸锶钡(BSTO)薄膜具备十分优越的铁电/介电性能,在可调谐微波器件和动态随机存储器(DRAM)方面显示出十分诱人的应用前景.而YBa2Cu3O-δ(YBCO)高温超导薄膜作为其电极引入,明显降低了微波损耗,能够大大优化器件的性能.本文针对微波器件性能要求对比了各种常用基片的性能参数,描述了目前BSTO薄膜与BSTO/YBCO异质薄膜制备中存在的问题以及薄膜介电性能测试表征方法.利用脉冲激光沉积(PLD)技术成功制备出结构完整和质量较高的Ba0.5Sr0.5TiO3薄膜.同时,在1.2°斜切LaAlO3基片上研制有Ba0.1Sr0.9TiO3/YBa2Cu3O7-δ异质双层膜,在1MHz频率、77K温度条件下,其介电常数为1200,介电损耗为0.0045,±30V直流偏压时可调性达到60%,在液氮温度下表现出良好的应用前景.     

Vertical geometry ultraviolet photodetectors with high photosensitivity based on nanocrystalline TiO2 films

Porous and dense nanocrystalline TiO₂ films grown on F:SnO substrates used in vertical geometry ultraviolet photodetectors are investigated. Compared with a detector with a dense nanocrystalline TiO₂ film (D-detector), a detector with a porous nanocrystalline TiO₂ film (P-detector) exhibits one order of magnitude higher responsivity due to a light scattering effect. In addition, the vertical geometry detectors show a fast response time. The rise time and decay time of the P-detector and D-detector are 19 and 136 ns, and 14 and 100 ns, respectively, which are six orders of magnitude faster than those of lateral geometry detectors based on dense nanocrystalline TiO₂ films. It is a result of a decreased mobility fluctuation.