聚酰亚胺LB膜MIS结构C—V特性

本文报道了Ａｌ／ＬＢ聚酰亚胺膜／Ｐ－Ｓｉ（１００）ＭＩＳ结构的Ｃ－Ｖ特性研究结果。６７层ＬＢ膜样品Ｃ－Ｖ特性近乎理想，具有负的固定电荷密度约１０＾１＾１ｃｍ＾－＾２量级，平带时滞后小于０．３Ｖ，对于ＭＩＳ隧道结，除了在－０．５－１．５Ｖ间具有反型层箝位产生的电容峰外，在－１．５－４Ｖ间还出现了另一电容峰值，假设在强电场下隧穿能力剧增，从而结构由隧穿限制区重新进入半导体限制区，可以解释这一峰值的出现     

DBM-g-PE与PVC的相互作用研究EI

采用固相接枝法制备了ＤＢＭ－ｇ－ＰＥ，用红外光谱分析证明了接枝物确实存在。ＰＶＣ／ＣＰＥ＝１００／５合金性能测定结果表明，添加５份接枝物的合金（Ａ），缺口冲击强度、拉伸强度分别为１８．２ｋＪ／ｍ２和５３．０ＭＰａ；而添加５份ＰＥ的合金（Ｂ），其相应性能为５．１ｋＪ／ｍ２和３３．８ＭＰａ。不加接枝物的合金（Ｃ），虽有高韧性，但拉伸强度却由５３．０ＭＰａ降至５０．２ＭＰａ。ＤＳＣ、ＳＥＭ的结果均表明，ＰＥ接枝ＤＢＭ后与ＰＶＣ的相互作用增强，与ＣＰＥ协同作用能增韧、增强ＰＶＣ，并探讨了其机理。     

HL—1M装置硼化膜的研究

ＨＬ－１Ｍ装置采用Ｃ２Ｂ１０Ｈ１２蒸汽等离子体增强沉积技术对第一壁进行了原位硼化，在第一壁表面上形成一层半透明、非晶ａ－Ｂ／Ｃ：Ｈ膜。在单电极、１．２Ａ／７５０Ｖ放电参数下，平均沉积速率为１１０ｎｍ／ｈ，膜厚不均匀度为８４％，Ｂ／Ｃ＝０．６－２．０，Ｂ－Ｃ的结合能为９７－９９ｅＶ，与Ｂ／Ｃ值有关。膜层中有２０－３０％的硼是以Ｂ－Ｃ的形式存在，７０－８０％碳是以ａ－Ｃ：Ｈ形式存在，这是ＨＬ－１Ｍ装置     

AMT保护青铜的研究

采用电化学方法和ＸＰＳ、ＡＥＳ法研究５－氨基－２－巯基－１、３、４－噻二唑（ＡＭＴ）在青铜表面形成的保护膜。结果表明，ＡＭＴ溶液处理后的青铜试片在ｐＨ值为７的０．５ｍｏｌ／ＬＮａ２ＳＯ４和５％ＮａＣｌ溶液中，其腐蚀过程受到了明显抑制，是由于ＡＭＴ在青铜表面形成Ｃｕ（Ｉ）ＡＭＴ络合物膜，其结构为Ｃｕ｜Ｃｕ２Ｏ｜Ｃｕ（Ｉ）ＡＭＴ。     

高性能2.5Gb／s用的DFB—LD／EA单片集成器件

报导了采用全ＭＯＣＶＤ生长的１．５５μｍ的单片集成ＤＦＢ＝ＬＤ／ＥＡ组件的 在ＤＷＤＭ系统上的传输测试结果，出纤功率Ｐｆ≥２．５ｍＷ＠Ｉｆ＝７５ｍＡ，边模抑制比ＳＭＳＲ〉３５ｄＢ，调制器反向偏压为２．５Ｖ时的消光比为１４ｄＢ，该发射模块在２．５Ｇｂ／ｓＤＷＤＭ系统上进行了传输试验，传输２４０Ｋｍ后无误码，其通道代价≤１ｄＢ＠ＢＥＲ＝１０＾－１２。     

Fe73.5Cu1Mo3Si13.5B9微晶软磁合金的结构及其对磁性的影响

对Ｆｅ７３．５Ｃｕ１Ｍｏ３Ｓｉ１３．５Ｂ９微晶软磁合金的结构及其对合金磁性的影响了研究，结果表明，在最佳磁性能下，晶相点阵常数ａ＝０．２８４３ｎｍ，相当于Ｆｅ（Ｓｉ）固溶体中含Ｓｉ％（ｍｏｌ／ｍｏｌ）：１８－２０，体积百分数Ｖ＝７４．８％，晶粒尺寸Ｄ＝１４．６ｎｍ；残余非晶层厚度δ＝１．２３ｎｍ；当Ｔ退火≥５６０℃时明显有Ｆｅ－Ｂ化合物析出。Ｆｅ７３．５Ｃｕ１Ｍｏ３Ｓｉ１３．５Ｂ９合金的磁性不仅与     

三维碳化硅/碳化硅陶瓷基编织体复合材料

采用化学气相浸渗法（ＣＶＩ）,制备出三维Ｈｉ－ＮｉｃａｌｏｎＳｉＣ／ＳｉＣ陶瓷基编织体复合材料．经３０ｈ ＣＶＩ致密化处理后,复合材料的密度达到 ２５９·ｃｍ－３,所研制的三维 ＳｉＣ／ＳｉＣ复合材料不仅具有较高的强度,而且表现出优异的韧性和类似金属材料非灾难性的断裂特征．复合材料的主要力学性能指标为：弯曲强度 ８６０ＭＰａ,断裂位移 １．２ｍｍ,断裂韧性４１．５ＭＰａ·ｍ１／２,断裂功２８．１ｋＪ·ｍ－２,冲击韧性３６．０ｋＪ·ｍ－２．     

立方A^4＋M^5＋2O7型化合物与新型负热膨胀材料

概述了立方Ａ＾４＋Ｍ＾５＋２Ｏ７型化合物的结构特点，讨论了ＡＶ２－ｘＰｘＯ７型（Ａ＝Ｚｒ或Ｈｆ；ｘ＝０．１～１．２）及其部分取代的Ａ＾４＋１－ｙＢ＾４＋ｙＶ２－ｘＰｘＯ７型（Ｂ＝Ｔｉ，Ｃｅ，Ｔｈ，Ｕ，Ｍｏ，Ｐｔ，Ｐｂ，Ｓｎ，Ｇｅ或Ｓｉ；ｙ＝０．１～０．４）和Ａ＾４＋１－ｙＣ＾１＋ｙＤ＾３＋ｙＶ２－ｘＰｘＯ７型（Ｃ为碱金属元素，Ｄ为稀土金属元素）材料的负热膨胀性能。     

最新DAC集成电路

日本ＮＰＣ公司最近推出型号为ＳＭ５８６６Ａ的芯片,它的特点是既能用于ＳＡＣＤ的,１比特ＤＳＤ格式,也能用于ＤＶＤ－Ａｕｄｉｏ的ＰＣＭ格式。由于ＳＡＣＤ和ＤＶＤ－Ａｕｄｉｏ两种格式,究竟是谁一统天下尚未见分晓,因此芯片生产厂家也脚踏两只船。ＳＭ５８６６的工作电压为４．５Ｖ－５．５Ｖ;工作温度－４０℃－８５℃;封装形式：２８脚ＳＯＰ,是一枚单声道的ＤＡＣ。其规格如下：适用于ＤＳＤ／ＳＡＣＤ和２４ｂｉｔＰＣＭ两种格式谐波失真ＴＨＤ＋Ｎ：ＤＳＤ模式／－１０９ｄＢ时,０．０００３６％２４ｂｉｔ;ＰＣＭ模式…     

旋转CVI制备C/SiC复合材料

旋转 ＣＶＩ是在 ＣＶＩ原理基础上发展的一种制备 Ｃ／ＳｉＣ复合材料的新工艺,通过石墨衬底的旋转,使预制体的制备与基体的沉积同步进行,能有效消除一般ＣＶＩ工艺过程中存在的“瓶颈”效应．在自制的旋转 ＣＶＩ设备上实验,探索了旋转 ＣＶＩ工艺参数中 ＣＨ_３ＳｉＣｌ_３（ＭＴＳ）的流量与浓度、沉积温度和Ｃ布缠绕线速度对ＳｉＣ基体沉积速度,以及沉积温度对基体结构的影响．并在低压（５ｋＰａ）、高温 （１１００℃）、 ４００ ｍＬ·ｍｉｎ^－１ Ｈ_２、 ２００ ｍＬ·ｍｉｎ^－１Ａｒ、 ＭＴＳ４０℃与Ｃ布以１．１～３．５ｍｍ·ｍｉｎ^－１的线速度连续旋转的沉积条件下,实现了单丝纤维间微观孔隙、纤维束之间以及Ｃ布层间宏观孔隙的致密化同步完成．     

Ultrathin TaOx film based photovoltaic device

Application of the economical metal oxide thin-film photovoltaic devices is hindered by the poor energy efficiency. This paper investigates the photovoltaic effect with an ultrathin tantalum oxide (TaOx) tunnel barrier, formed by the plasma oxidation of a pre-deposited tantalum (Ta) film. These ~ 3 nm TaOx tunnel barriers showed approximately 160 mV open circuit voltage and 3-5% energy efficiency, for varying light intensity. The ultrathin TaOx (~ 3 nm) could absorb approximately 12% of the incident light radiation in 400-1000 nm wavelength range; this strong light absorbing capability was found to be associated with the dramatically large extinction coefficient. Spectroscopic ellipsometry revealed that the extinction coefficient of 3 nm TaOx was ~ 0.2, two orders higher than that of tantalum penta oxide (Ta₂O₅). Interestingly, refractive index of this 3 nm thick TaOx was comparable with that of stochiometeric Ta₂O₅. However, heating and prolonged high-intensity light exposure deteriorated the photovoltaic effect in TaOx junctions. This study provides the basis to explore the photovoltaic effect in a highly economical and easily processable ultrathin metal oxide tunnel barrier or analogous systems.     

Some new results in porous silicon

Efforts have been made to see the effect of some standard microelectronic processing steps on porous silicon. Our diffusion experiments for making p-n junctions confirm that this material can withstand high temperatures of the order of 800°C to 1000°C. A new technique for photolithography has been suggested to obtain porous silicon in selected areas. Etch stop method to control the thickness of the porous layer and an organic protective layer for porous silicon have also been suggested. Models proposed by other workers to explain luminescence in porous silicon are not sufficient to explain many experimental observations. A hybrid model is suggested.     

The relaxation times of an STJ detector: Role of the proximity effect

The behavior of a superconducting tunnel junction detector (STJ) in the regime of low excitation is described, and the characteristic times of the dynamical response are discussed. The effect of a proximity layer in the STJ is analyzed in terms of the McMillan model. A set of phenomenological equations for the proximized STJ driven out of equilibrium is obtained, showing the importance of the role of the proximity effect in the dynamics of the device.     

A Superconducting Cold-Electron Bolometer with SIS’ and Josephson Tunnel Junctions

A novel concept of a Superconducting Cold-Electron Bolometer (SCEB) with Superconductor-Insulator-Weak Superconductor (SIS’) Tunnel Junction and Josephson Junction has been proposed. The main innovation of this concept is utilizing the Josephson Junction for DC and HF contacts, and for thermal isolation. The SIS’ junction is used also for electron cooling and dc readout of the signal. The SIS’ junction is designed in loop geometry for suppression of the critical current by a weak magnetic field. The key moment of this concept is that the critical current of the Josephson junction is not suppressed by this weak magnetic field and can be used for dc contact. Due to this innovation, a robust two layer technology can be used for fabrication of reliable structures. A direct connection of SCEBs to a 4-probe antenna has been proposed for effective RF coupling.      

Numerical simulation of collective phenomena in Josephson junction networks

Collective pinning phenomena of vortices in Josephson junction networks (JJN) in magnetic fields are studied using numerical simulations. We consider two kinds of structure of JJN: a ladder (Josephson junction ladder, JJL) and a two-dimensional square array (Josephson junction array, JJA). For the JJL and JJA with distribution of the strengths of junction critical currents, we investigate the critical current of vortex depinning in the presence of bias currents. On the basis of a theory of collective vortex pinning, it is found that the critical currents for both JJL and JJA show a universal scaling behavior.     

热声热机--无运动部件的低污染热机

通过对国内外热声热机理论和实验研究的分析 ,提出在我国发展热声热机的一些建议     

Static Magnetic Flux Dynamics in One-Dimensional (1D) Josephson Lattices

We investigated static magnetic flux dynamical properties of one-dimensional lattices of Josephson junctions. The discretized wave equations of the Josephson junction lattice were solved using a generalized relaxation iteration algorithm. Numerical simulations indicated that transitions between periodic state and chaotic state will occur as the physical parameters and geometric parameters such as external current y _n, magnetic field h ₀, h, and the length of Josephson junction _n and d _n , varied. A shot length of the Josephson junction favors stable periodic states.     

Highly conductive single molecular junctions by direct binding of π-conjugated molecule to metal electrodes

We have investigated electrical conductance of the single C₆₀ and benzene molecules bridging between metal electrodes. The single C₆₀ and benzene molecular junctions were prepared in ultra high vacuum. The single molecular junctions showed the high conductance values (around 0.1–1 G₀: G₀ = 2e²/h), which were comparable to that of the metal atomic contact. The highly conductive single molecular junctions could be prepared by direct binding of the π-conjugated organic molecule to the metal electrodes without the use of anchoring groups. For comparison, the single 1,4-benzenediamine molecular junction was investigated in solution. The benzene molecule was bound to the Au electrodes via amine (anchoring group) for the single 1,4-benzenediamine molecular junction. The conductance of the single 1,4-benzenediamine molecular junction was 8 × 10⁻³G_0. It was suggested that the anchoring groups acted as resistive spacers between the molecule and metal.     

Excitation of Josephson junction by an electromagnetic field in the nonlinear process formalism

The numerical analysis of the excitation of the Josephson junction (Jj) by an external electromagnetic field has been reported. The fully nonlinear approach requires using the quasiperiodic solutions of the sine-Gordon equation (sGe) which are expressed by the Riemann theta functions. Their local soliton approximation of the nondissipative Jj is presented. Using the self-consistent phenomenological model of a long Jj, the influence of the external electromagnetic field on the volt-ampere characteristics is considered.