共面波导馈电的小型化双通带滤波器

提出了一种采用共面波导馈电的小型多模双通带平面滤波器,该滤波器采用内部嵌套的多模谐振器缩小了电路尺寸,利用奇偶模分析方法和弱耦合激励的方式分析了该多模谐振器的谐振特性,并依此推导出其谐振频率与物理尺寸的相互关系。为了满足滤波器的馈电,端口耦合并实现小型化,引入了异面共面波导馈电结构。文中给出了四个谐振模式的分析以及两个通带中心频率和带宽的控制机理,实现了滤波电路的频率和带宽的独立控制。最终实现了中心频率为2.39GHz 和4.34GHz,相对带宽分别为8.8%和13.4%的双通带平面滤波器。该滤波器中心频率和带宽独立设计可控,而且谐振器尺寸大小仅为0.09λg ×0.09λg 。本文所设计的滤波器结构简单、尺寸小,通带间隔离度较高、易加工制作,具有较高实用价值。     

基于奇偶模分析法的四模谐振器结构的双通带带通滤波器设计

提出了一款基于四模谐振器的新型双通带带通滤波器.设计的四模谐振器基于微带线结构,由四个开路枝节和一个短路枝节组成.两次采用奇偶模分析法对该四模谐振器结构进行分析.该四模谐振器的每个模式能够实现独立调节,同时每两个模式形成一个通带.采用源与负载耦合的馈电方式,提高滤波器的带外抑制性.该滤波器具有四个传输零点和四个传输极点.测试结果表明,该双模双通带滤波器工作于2.08GHz和6.07GHz,3dB带宽分别为11.06%和7.74%.设计的滤波器具有紧凑的结构,只有0.28λ_g×0.11λ_g大小.     

应用于WLAN&WiMAX的小型化SIR可调双通带滤波器

对传统双频段耦合方案进行改进,提出一种新型双通带滤波器结构。该滤波器由两个对称阶跃阻抗谐振器(SIRs)组成,通过调节SIR的电长度,可以得到中心频率可调的通带。为了验证设计与分析的正确性,提出和设计了3个双通带滤波器。Ⅰ型滤波器两个通带的中心频率分别为2.4 GHz和3.5 GHz,相对带宽分别为5.8%和13.7%;Ⅱ型滤波器两个通带的中心频率分别为3.5 GHz和5.2 GHz,相对带宽分别为5.7%和9.2%;Ⅲ型滤波器两个通带的中心频率分别为2.4 GHz和5.2 GHz,相对带宽分别为6.3%和5.4%。Ⅰ型和Ⅱ型滤波器均适用于宽带互通微波互联接入(Wi MAX)和无线局域网(WLAN)应用。Ⅲ型滤波器适用于双频WLAN应用。对所有滤波器进行加工与实测,测试结果与仿真结果吻合较好。     

横向双模双频滤波器设计

基于横向滤波器耦合结构,采用支节加载双模谐振器,设计了中心频率位于1.57 GHz(GPS应用)与2.4GHz(WLAN应用)的双频微带滤波器。由短路支节加载双模谐振器形成第一个通带,开路支节加载双模谐振器形成第二个通带,两个谐振器被输入/输出馈线隔离,每个通带的中心频率与带宽可以单独调节。测试结果表明:两个通带内的最小插损分别为2.18,1.35 dB,3 dB带宽分别为5.2%,6.8%,回波损耗均小于16 dB,三个传输零点分别位于1.28,2.08,2.71 GHz处。该滤波器具有尺寸小、带外选择性好等优点。     

带SIR结构新型多枝节加载双频滤波器

本文在传统λ/4阶梯阻抗谐振器的基础上,提出了一种新型的宽带双频滤波器改进设计方案。改进的滤波器增加了传输零点,此传输零点能有效的改进通带的选择性和阻带特性,且上阻带带宽很宽。结构简单,在传统类似滤波器同谐振频率基础上有效缩小了尺寸,并且设计的滤波器通带的中心频率和带宽是完全独立可控,方便我们应用到实际。工作在4.1 GHz和6 GHz两个频段,3 dB相对带宽分别为7.2%和2.2%,实测和仿真吻合良好。     

基于折叠型SIR 谐振器的双通带滤波器设计

文中提出了一种基于折叠型SIR 谐振器的双通带频率可控的微带滤波器,它由SIR 谐振器特性结合 传输线理论实现。该滤波器设计为具有两个自由度,调节谐振器的导带宽度可以对两个通带之间的频率及其间隔 进行调节。文中还研究了调整谐振器导带长度对滤波器频率特性的影响。测试结果表明,该微带滤波器有两个通 带,其中心频率分别为2. 79 GHz 和3. 90 GHz,带内最小插入损耗分别为-0. 96 dB 和-3. 0 dB,带内最小回波损耗分 别为-42 dB 和-18 dB,相对带宽分别为5. 7%和6. 7%。仿真和测试结果的一致性证实了滤波器设计的有效性。     

一种通带可控的双频SIW滤波器设计

提出了一种通过加载T形槽实现双频可控的基片集成波导带通滤波器。滤波器的双频特性由SIW腔内对称的T形槽线谐振器微扰TE101和TE102模得到。通过改变槽线谐振器的物理尺寸可以实现对滤波器两个通带中心频率的灵活控制。为了验证上述方法的可行性,设计了一个中心频率为3.77 GHz和9.27 GHz的双频滤波器。实测得该双频滤波器两个通带的回波损耗优于11 dB,在3.77 GHz时插入损耗为0.8 dB,第一通带的相对带宽可达13%。仿真和测试结果吻合较好,证实了设计方法的有效性。     

具有小中心频率比的紧凑型双频带滤波器

采用平面双模谐振器设计了一款新颖的具有小中心频率比的紧凑型双频带滤波器。该滤波器的两个工作频段的中心频率分别为5G WiFi的两个有用频段5.2 GHz和5.8 GHz,中心频率比为1:1.1。实现了具有四个传输零点的双通带响应,其中位于两个频带中间的两个传输零点由谐振器自身产生,很好地抑制了通带间的无用频段。另外两个传输零点由源负载耦合结构产生。加工并测试了该滤波器,两个通带的3 dB相对带宽为5.8%和5.2%,通带内的插入损耗小于0.8 dB,四个传输零点分别位4.52, 5.50,5.50和6.50 GHz,实验和仿真结果吻合,验证了结构的有效性。     

基于双模开环谐振器的双频带滤波器设计

基于开环双模谐振器设计了一种双频带通滤波器,由两个中心重合的正方形开口环谐振器组成。分析该谐振器的奇偶模谐振频率与传输零点,每个通带内有两个谐振模式。该滤波器中心频率分别为4.5 GHz和6.5 GHz,3 dB相对带宽FBW分别为11%、5%,两通带带内插入损耗分别小于0.6 dB、1.4 dB,带内回波损耗分别优于19.5 dB、16.5 dB,高频处阻带抑制达到50 dB,两通带之间隔离度达到53 dB,尺寸仅为6 mm×11 mm×1.09 mm。     

新型四通带滤波器设计

基于多枝节加载四模谐振器,设计出一款新型结构简单的四频带通滤波器,其频带可控、损耗较小。通过改变谐振器中4个相对独立的谐振路径长度可对四个通带的中心频率进行调节。由于4条谐振路径复用微带传输线,因而滤波器的面积较小,为16.04 mm×23.51 mm(0.14λ_g×0.20λ_g)。经仿真与实物测试,4个通带中心频率分别为2.58/3.27/5.27/6.06 GHz,其插入损耗为1.02/1.31/0.93/1.66 dB,回波损耗皆高于15 dB。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.