微电子学、集成电路

丁刊4 96040409脉冲等离子体软X射线探测系统/郭工彬刀微细加工技术一1996,(l)一29~39 研制了种脉冲重复频率为10Hz的激光等离子休软X射线源;设计并建立了以掠人射恒偏单色仪为基础的脉冲等离子体软X射线辐射测试系统.图7表1参12(许)28(许)了N4 96040410等离子体提纯硅粉的实验研究/李忠,王敬义,何关明,肖成章,赵介‘华中理工大学固休电子学系)}’/微细加工技术一1996,(1)一44一48 阐述了等离子休工艺在硅粉提纯方l面的应用,在真空条件下,利用HCI或含氯气体化合物,经射频辉光放电形成等离子体与硅粉中的杂质反应,,丁以在较低的温度下、…     

冷等离子体对硅粉薄层的提纯研究

给出了冷等离子体对作为阴极的硅粉薄层的提纯方法及装置、提纯结果和规律。实现表明，在氮化氢气氛下，不仅可以除去９５％以上的许多过渡金属复杂，还可以除去许多非金属杂质，这种提纯硅的研制太阳能电池材料方面具有发的应用前景。     

重掺杂硅的热氧化

研究干氧和湿氧(95℃H_2O)氧化膜厚度在0.10～1.0μ,温度在920℃～1200℃的范围内重掺杂硅氧化特性,研究硅掺硼(1×10~(16)～2.5×10~(20)cm~(-3))或掺磷(4×10~(15)～1.5×10~(20)cm(-3)),以及这两种元素在硅表面的淀积。当硼浓度大于1×10~(20)/cm~3的情况,所有温度下氧化速率增加,而干氧氧化时这种影响最明显。1000℃以上,P掺硅氧化速率增加没有这样快,而920下,P的浓度1×10~(19)cm~(-3)或更高,结果使氧化速率有明显的增加,磷掺杂的影响在湿氧中最明显,这个结果可以用改硅热氧化时杂质再分布来园满地介释。这些考虑还能得到其他杂质重掺杂影响氧化速率的试验值。 高温度下，硅在各种氧化气氛中反应生成SiO_2,单晶硅热氧化的动力学是最近几篇论文的题目（1-5）。这些论文作者报导了起过所研究的浓度范围时氧化速率不依赖于体掺杂浓度。受主杂质和花主杂质的浓度从很低的值（本证硅）到大概象1×10~(20)cm~(-3)那样高，然而还要注意，氧化杂质浓度大于10~（20）cm~(-3)的硅表面时，氧化速率经常偏离标准值为6或7。对于大部分偏差用做器件的扩散工艺的样品来发现的。近来，发展表面控制器件和集成电路中哇氧化的作用日益重要，同时精密控制氧化层的厚度变得更有兴趣（8，9）。因此，着于研究决定对掺杂     

微氮直拉硅单晶中氮杂质的施主行为

氮杂质在微氮直拉硅单晶中引入了不同于热施主（ＴＤ）和新施主（ＴＮＤ）的氮关施主（ＮＲＤ）（ｎｉｔｒｏｇｅｎ－ｒｅｌａｔｅｄｄｏｎｏｒ）．其形成于５００～９００℃，６００℃左右最为活跃．短时间热处理时，ＮＲＤ的形成与消除具有可回复性，并与氮—氮对的可逆变化──对应．随热处理时间的延长，可逆行为逐渐消失．硅中的氮最终固化于稳定的微沉淀态．     

冷等离子体对硅粉薄层纯化的动力学分析

利用提高硅粉薄层温度的方法，使冷等离子体对硅提纯达４Ｎ（９９．９９％）。本文用反应动力学的方法分析提纯机理，建立必要的方程以探讨影响提纯的因素。     

冷等离子体以硅粉薄层纯化的动力学分析

利用提高硅粉薄层温度的方法，使冷等离子体对硅提纯达４Ｎ（９９．９９％）本文用反应的方法分析提纯机理，建立必要的方程以探讨影响提纯的因素。     

背面多孔硅对SIMOX中铜杂质的吸除作用

在SIMOX材料的背面成功地制备了多孔硅层,再在正面故意注入1×1015cm-2剂量的铜杂质。经900℃退火,二次离子质谱（SIMS）测试表明钢杂质能穿过理层SiO2并在背面多孔硅处富集。用剖面投射电子显微镜（XTEM）分析了埋层SiO2和背面多孔硅层的微观结构,背面多孔硅层及其多孔硅层同硅衬底之间“树技状”的过渡区被认为是铜杂质有效的吸除中心。     

激光烧蚀硅所生成的等离子体发射光谱特性

报道由Ｑ－开关Ｎｄ：ＹＡＧ激光器产生的１．０６μｍ、１０ｎｓ的脉冲激光辐射大气中的硅靶所产生的等离子体发射光谱的研究结果。当作用在硅靶表面的功率密度为９．３×１０９Ｗ／ｃｍ２时，测定了等离子体在２００～８８０ｎｍ波长范围内的时间分辨发射光谱。估计了等离子体点燃的时间，测定了等离子体中硅原子的推进速度，讨论了等离子体中Ｎ＋离子产生的原因。通过测量等离子体辐射谱线的半高宽随延迟时间的变化．得到等离子体中电子密度随时间的延迟近似地以ｅｘｐ（－ｔ１／２）的关系衰减。     

热处理升温快慢对非晶硅中形成的纳米硅粒尺寸的影响

含氢非晶硅薄膜经过快速热退火处理后,我们用拉曼散射和X-射线衍射技术对样品进行分析.我们的实验结果表明:在非晶硅薄膜中形成的纳米硅晶粒的大小随着热退火过程中升温快慢而变化.在升温过程中,当单位时间内温度变化量较大时（～100℃/s）,则所形成纳米硅粒较小（～1.6～15nm）;若单位时间内温度变化量较低（～1℃/s）,则纳米硅粒较大（～23～46nm）。根据分形生长理论和计算机模拟,我们讨论了升温快慢与所形成的纳米硅颗粒大小的关系.     

UHV/CVD低温生长硅外延层的性能研究

本文利用自行研制的一台超高真空化学气相沉积（ＵＨＶ／ＣＶＤ）系统，在７８０℃下进行了硅低温外延，取得了表面平整、缺陷密度低、界面质量良好、界面杂质分布陡峭的薄外延层     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.