Superharmonic injection-locked frequency dividers

Injection-locked oscillators (ILOs) are investigated in a new theoretical approach. A first-order differential equation is derived for the noise dynamics of ILOs. A single-ended injection-locked frequency divider (SILFD) is designed in a 0.5-μm CMOS technology operating at 1.8 GHz with more than 190 MHz locking range while consuming 3 mW of power. A differential injection-locked frequency divider (DILFD) is designed in a 0.5-μm CMOS technology operating at 3 GHz and consuming 0.45 mW, with a 190 MHz locking range. A locking range of 370 MHz is achieved for the DILFD when the power consumption is increased to 1.2 mW     

为调谐器设计的带自动幅度控制1.1GHz差分压控振荡器

为集成调谐器接收机芯片系统设计了一个带自动幅度控制回路的差分结构电容电感压控振荡器.通过采用pMOS管作为有源负阻使振荡器谐振回路可以直接接地电平,减小了寄生效应,扩大了频率调谐的线性及其范围.采用的自动幅度控制AAC回路具有元件少,噪声低,控制灵敏,调节容易,结构简单及设计方便的优点,并保证振荡器电路的性能最小地依赖于环境和制造工艺参数的变化.所设计的压控振荡器采用新加坡特许50GHz 0.35μm SiGe BiCMOS工艺流片,经测试在1MHz频率偏移处达到了-127.27dBc/Hz的相位噪声性能,具有宽的(990～1140MHz)和线性(调谐增益32.4MHz/V)的频率调谐曲线.整个振荡器电路在5V的供电电压下仅消耗6.6mA的电流,可以满足调谐器的应用需要.     

应用于EMC测量的集成光学电场传感器性能分析

依据集成光学电场传感器的工作原理,研制了可用于电磁兼容性测量的分段电极结构与锥形天线结构的电场传感器.测试结果表明:分段电极传感器频响范围为10 MHz～6 GHz,最小可测电场强度达到30 mV/m,在频率为200 MHz时,线性动态范围可达90 dB;锥形天线传感器频响范围为10 kHz～10 GHz,最小可测电场强度达到20 mV/m,在频率为1 GHz时,线性动态范围可达100 dB.     

基于0.18μm CMOS工艺的宽带LCVCO设计

介绍了LCVCO原理及实现超宽频率覆盖的实现方法。在此基础上设计了一个频率覆盖范围达1.022 GHz的宽带LCVCO,实现了1.092 GHz-2.114 GHz频段的覆盖,为了减小VCO增益KVCO的波动,采用了自控变容管阵列模块。设计的振荡器采用0.18μm RF CMOS工艺,在Cadence软件Spectre仿真工具上的仿真结果显示电路的压控增益KVCO控制在±37.5%之内,在2.1 GHz、1.5 GHz和1.1 GHz频率点上电路电流分别为2.1 mA、4.4 mA、7.5 mA,相噪分别为-118 dBc/Hz@1 MHz、-114 dBc/Hz@1 MHz、-114 dBc/Hz@1 MHz。     

A 2 V 1.8 GHz fully integrated CMOS dual-loop frequency synthesizer

A 2 V 1.8 GHz fully integrated CMOS dual-loop frequency synthesizer is designed in a standard 0.5 /spl mu/m digital CMOS process for wireless communication. The voltage-controlled oscillator (VCO) required for the low-frequency loop is designed using a ring-type VCO and achieves a tuning range of 89% from 356 to 931 MHz and a phase noise of -109.2 dBc/Hz at 600 kHz offset from 856 MHz. With an active chip area of 2000/spl times/1000 /spl mu/m/sup 2/ and at a 2 V supply voltage, the whole synthesizer achieves a tuning range from 1.8492 to 1.8698 GHz in 200 kHz steps with a measured phase noise of -112 dBc/Hz at 600 kHz offset from 1.86 GHz. The measured settling time is 128 /spl mu/s and the total power consumption is 95 mW.     

Cross-coupled differential oscillator MMICs with low phase-noiseperformance

LC-tank oscillators in the 5~6 GHz frequency range have been designed and implemented in a commercial 0.6 μm GaAs MESFET technology. One is a voltage-controlled oscillator (VCO), and the other is an oscillator without a controlling element. The output frequency range of the VCO is from 5.44 to 6.14 GHz, and the measured phase-noise is -101.67 dBc/Hz at an offset frequency of 600 KHz from the 5.44 GHz carrier. The phase-noise of the 6.44 GHz oscillator is -108 dBc/Hz at an offset frequency of 600 KHz, and the phase-noise curve, in the offset frequency range between 100 KHz and 1 MHz, shows a -20 dB/decade slope. These phase-noise characteristics are comparable to, or better than, those of the reported 5~6 GHz-band CMOS oscillators. To our knowledge, this is the first GaAs MESFET-based oscillator which has a cross-coupled differential topology and a capacitive coupling feedback to suppress the up-conversion of 1/f noise. Also, it is first reported that the GaAs MESFET-based oscillator shows 1/f² phase-noise behavior across the offset frequency range from 100 KHz to 1 MHz     

一种宽带正交振荡器中子频带的精确设计方法

设计了一个应用于3.5 GHz频段锁相环的低电压宽带正交压控振荡器。通过对开关电容阵列进行功能划分和优化设计,从而精确地将锁相环的频道点逐一映射到了振荡器的子频带中,进而消除了频道切换时子频带的选择过程时间。该芯片采用0.18μm CMOS工艺实现,测试结果表明:振荡器的频率覆盖范围从3.04~3.58 GHz,并且所有的子频带均一一准确地覆盖了目标频道点;调谐增益从86 MHz/V变化至132 MHz/V,其平均值仅比设计值高6%;最高子频带的中心频率为3.538 GHz,其偏离载波1 MHz处的相位噪声为-121.6 dBc/Hz;在1.2 V电源电压下,振荡器核心的功耗约为14 mW。     

Design and realization of an ultra-low-power low-phase-noise CMOS LC-VCO

A fully integrated cross-coupled LC tank voltage-controlled oscillator(LC-VCO) using transformer feedback is proposed to achieve a low phase noise and ultra-low-power design even at a supply below the threshold voltage. The ultra-low-power VCO is implemented in the mixed-signal and RF 1P6M 0.18-μm CMOS technology of SMIC. The measured phase noise is-125.3 dBc/Hz at an offset frequency of 1 MHz from a carrier of 2.433 GHz,while the VCO core circuit draws only 640μW from a 0.4-V supply.The designed VCO can...     

Continuously tunable thin active layer and multisection DFB laserwith narrow linewidth and high power

The feasibility of a wavelength tuning range of 1 nm with the spectral linewidth around 2.5 MHz at about 10 mW is demonstrated in thin-active-layer and multisection 1.5-μm distributed feedback (DFB) lasers with long cavities. The tuning range is widened to over 3 nm by combining electric and thermal tuning effects. A flat FM response with an efficiency of over 1 GHz/mA from low to high (around 1 GHz) frequency is also achieved     

A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver

This paper describes a 4 GHz fractional-N frequency synthesizer for a 3.1 to 5 GHz IR-UWB transceiver.Designed in a 0.18μm mixed-signal & RF 1P6M CMOS process, the operating range of the synthesizer is 3.74 to 4.44 GHz. By using an 18-bit third-order ∑-△ modulator, the synthesizer achieves a frequency resolution of 15 Hz when the reference frequency is 20 MHz. The measured amplitude mismatch and phase error between I and Q signals are less than 0.1 dB and 0.8° respectively. The measured phase noise is -116 dBc/Hz at 3 MHz offset for a 4 GHz output.Measured spurious tones are lower than -60 dBc. The settling time is within 80 μs. The core circuit conupSigmaes only 38.2 mW from a 1.8 V power supply.     

10.5GHz 1:2静态分频器设计与实现

采用0.18μm CMOS工艺设计并实现了1∶2静态分频器。设计中为达到高速率和高灵敏度,对传统的SCFL结构D触发器进行了拓扑及版图优化。测试结果表明,电源电压为1.8V时,该分频器最高工作频率高于10.5GHz,最低工作频率低于2.5MHz(受测试条件限制),输入信号0dBm时的工作频率范围为2.5MHz～9.4GHz,芯片核心功耗9mW,核心面积50μm×53μm。     

Design of a 4.6 GHz high-performance quadrature CMOS VCO using transformer couple

A CMOS quadrature LC-tank voltage-controlled oscillator topology which uses a planar spiral trans-former as coupling elements has been implemented in mixed-signal and RF 1P6M 0.18μm CMOS technology of SMIC. The measured phase noise is -125.7 dBc/Hz at an offset frequency of 1 MHz from the carrier of 4.6 GHz while the VCO core circuit draws only of 10 mW from a 1.8 V supply. The measured phase error is approximately 1.5° based on the time domain outputs and the output power is about -2 dBm. The VCO can cover the frequency range of 4.36-4.68 GHz. The tuning range is 320 MHz (7.0%) and the FOM is -189 dB.     

22 GHz monolithically integrated oscillator in silicon bipolartechnology

A monolithically integrated oscillator with a tuning range of 19.5-23 GHz is presented. The circuit uses on-chip spiral inductors and achieves a phase noise of -91 dBc/Hz at an offset of 1 MHz. It is manufactured in a 0.5 μm production-near silicon bipolar technology with f_T and f_max of 50 GHz. The oscillator consumes 18.5 mA at a supply voltage of 3.3 V     

1?MHz–3.5?GHz, wide range input duty 50% output duty cycle corrector

A duty cycle corrector (DCC) is proposed in this paper. By directly controlling the duty cycle in the clock distribution path, it can work at a frequency as high as 3.5?GHz. The DCC adopts the continuous-time integrator as the duty cycle detector. The output pulse is scaled down according to the input frequency, which reduces the control voltage ripple and expands the minimum operation frequency to 1?MHz. The test chip is fabricated using SMIC 0.18???m CMOS process. The experiment results show that the frequency range of the input signal was 1?MHz?C3.5?GHz, and the duty cycle range of the input signal is from 0.1?C99.9%. The peak-to-peak jitter and power dissipation are 33.3?ps and 0.6?mW, respectively, at an operating frequency of 2?GHz.     

A low-power 2/5.8-GHz dual-wide-band CMOS LC-VCO with switched-inductor technique

A fully integrated dual-band LC voltage control oscillator, designed in a 0.18-µm CMOS technology for 5.8-GHz/2.0-GHz wireless communication applications, is described. The frequency band switching is accomplished with switched-inductor technique. The dual-band oscillator can be operated in 5.38–6.23?GHz and 1.78–2.07?GHz with 15% frequency tuning range. Two different inductors are used for the frequency band switching. Frequency tuning is implemented by varying the capacitance of a MOS varactor. The measured phase noise is ?109?dBc/Hz @ 1?MHz and ?112?dBc/Hz @ 1?MHz for frequency at 5.8?GHz and 2?GHz, respectively. This oscillator is fabricated in UMC's 0.18-µm one-poly-six-metal 1.8?V process. The power dissipation of this dual-band VCO is 11.7 and 9.3?mW for oscillation frequency of 2?GHz and 5.8?GHz, respectively.     

4.6 GHz CMOS voltage-controlled oscillator

A 4.6 GHz voltage-controlled oscillator (VCO) was designed and fabricated using 0.25 μm CMOS technology. A careful circuit design based on a trade-off between frequency-tuning range and phase-noise characteristics, realised both a sufficient frequency-tuning range of 230 MHz and a low phase-noise characteristic of -118.1 dBc/Hz at 1 MHz offset. This phase-noise characteristic is superior to previously reported VCOs     

Measurement of a VPE-transported DFB laser with blue-shiftedfrequency modulation response from DC to 2 GHz

The frequency modulation characteristics of a VPE-transported 1.53 μm wavelength GaInAsP-InP DFB semiconductor diode laser was measured. Below approximately 0.7 mW optical output power per facet, it exhibited a smooth, blue-shifted, frequency modulation response from DC to 2 GHz. In the modulation frequency range of 10 MHz to 100 MHz it exhibited a |Δf/ΔI| of 0.5-1.8 GHz/mA, depending on the biasing level     

A 345GHz SIS receiver for radio astronomy

A 345GHz superconductor insulator superconductor (SIS) tunnel junction receiver utilizing a full height rectangular waveguide mixer with two tuning elements, i.e. an E-plane and backshort tuner, has been constructed and installed on the Caltech Submillimeter Observatory 10m antenna on Mauna Kea, Hawaii. The receiver exhibits a best double side-band noise temperature response of 150K±20K (averaged over a 500 MHz IF bandwidth centered at 1.5GHz) at a design center frequency of 345GHz and at an ambient temperature of approximately 3.8K. Additional measurements show that the receiver has an excellent response at selected points within an RF input range of 280 to 363GHz.     

A 5-GHz low-voltage and low-power CMOS LC voltage controlled oscillator for 802.11a wireless LAN applications

In this paper, a low phase noise and low power 5.15?GHz LC-tank VCO is presented and analysed. The phase noise achieved is??91,??116 and??126?dBc/Hz at 100?KHz, 1?MHz and 3?MHz offsets respectively from the carrier frequency of 5.15?GHz, with 1.8?V power supply voltage and giving a very low power consumption of about 2.5?mW by considering the proposed oscillator topology, which consumes less power than the classical oscillator using the traditional differential transconductor pair. A broad tuning range has been achieved by means of standard mode PMOS varactors. The tunability of the designed VCO covers 530?MHz, from 4.78?GHz up to 5.31?GHz. Predicted performance has been verified by analyses and simulations using ELDO-RF tool with 0.35?µm CMOS TSMC parameters.     

Design of active inductor-based current-controlled oscillators using gm/Id methodology

This paper presents a novel design procedure based on gm/Id methodology to achieve a trade-off between tuning range, phase noise and output swing of active-inductor-based current-controlled oscillators (CCOs). It is shown that equations for the phase noise and corner frequency of the selected CCO configuration are related to the gm/Id parameters. In accordance with the above relations, the designed CCO is simulated using 0.18 µm TSMC CMOS technology parameters. The simulation exhibits a tuning range of 432 MHz to 3.54 GHz, a phase noise in the range of −84 dBc/Hz to −104.6 dBc/Hz at 1 MHz offset from carrier and a figure of merit of 178.4 dB in 1.453 GHz.