Generation of strong optical field in soft X-ray region by using high-order harmonics

For further development of a variety of applications, one of the most important issues is the improvement of output harmonic energy and conversion efficiency. We review our work on the energy scaling of high-order harmonic generation based on phase-matching using a loosely focused beam. Our harmonic energy scaling method can be universally applied to harmonic generation in the neutral rare gas target. In addition, we demonstrate a new concept for spatial separation between the high-energy pump and harmonic beam to increase the available soft X-ray energy for the applications. This method is very simple and highly useful for not only high-order harmonic generation but also longitudinally pumped X-ray lasers. By combining the high-energy high harmonic source and new spatial separation method, we successfully demonstrate focusing of the soft X-ray beam with a peak intensity of 1/spl times/10/sup 14/ W/cm/sup 2/, which is to our knowledge the highest ever reported in the soft X-ray region.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.     

Experiments and simulations of short-pulse laser-pumped extreme ultraviolet lasers

Recent experimental work on the development of extreme ultraviolet lasers undertaken using as the pumping source the VULCAN laser at the Rutherford Appleton Laboratory is compared to detailed simulations. It is shown that short duration (/spl sim/picosecond) pumping can produce X-ray laser pulses of a few picosecond duration and that measurement of the emission from the plasma can give an estimate of the duration of the gain coefficient. The Ehybrid fluid and atomic physics code developed at the University of York is used to simulate X-ray laser gain and plasma emission. Two postprocessors to the Ehybrid code are utilized: 1) to raytrace the X-ray laser beam amplification and refraction and 2) to calculate the radiation emission in the kiloelectronvolt photon energy range. The raytracing and spectral simulations are compared, respectively, to measured X-ray laser output and the output of two diagnostics recording transverse X-ray emission. The pumping laser energy absorbed in the plasma is examined by comparing the simulations to experimental results. It is shown that at high pumping irradiance (>10/sup 15/ Wcm/sup -2/), fast electrons are produced by parametric processes in the preformed long scalelength plasmas. These fast electrons do not pump the population inversion and so pumping efficiency is reduced at high irradiance.     

High-speed InSb photodetectors on GaAs for mid-IR applications

We report p-i-n type InSb-based high-speed photodetectors grown on GaAs substrate. Electrical and optical properties of photodetectors with active areas ranging from 7.06/spl times/10/sup -6/ cm/sup 2/ to 2.25/spl times/10/sup -4/ cm/sup 2/ measured at 77 K and room temperature. Detectors had high zero-bias differential resistances, and the differential resistance area product was 4.5 /spl Omega/ cm/sup 2/. At 77 K, spectral measurements yielded high responsivity between 3 and 5 /spl mu/m with the cutoff wavelength of 5.33 /spl mu/m. The maximum responsivity for 80-/spl mu/m diameter detectors was 1.00/spl times/10/sup 5/ V/W at 4.35 /spl mu/m while the detectivity was 3.41/spl times/10/sup 9/ cm Hz/sup 1/2//W. High-speed measurements were done at room temperature. An optical parametric oscillator was used to generate picosecond full-width at half-maximum pulses at 2.5 /spl mu/m with the pump at 780 nm. 30-/spl mu/m diameter photodetectors yielded 3-dB bandwidth of 8.5 GHz at 2.5 V bias.     

Angular domain imaging of objects within highly scattering media using silicon micromachined collimating arrays

Optical imaging of objects within highly scattering media, such as tissue, requires the detection of ballistic/quasi-ballistic photons through these media. Recent works have used phase/coherence domain or time domain tomography (femtosecond laser pulses) to detect the shortest path photons through scattering media. This work explores an alternative, angular domain imaging, which uses collimation detection capabilities of small acceptance angle devices to extract photons emitted aligned closely to a laser source. It employs a high aspect ratio, micromachined collimating detector array fabricated by high-resolution silicon surface micromachining. Consider a linear collimating array of very high aspect ratio (200: 1) containing 51/spl times/1000 /spl mu/m etched channels with 102-/spl mu/m spacing over a 10-mm silicon width. With precise array alignment to a laser source, unscattered light passes directly through the channels to the charge coupled device detector and the channel walls absorb the scattered light at angles >0.29/spl deg/. Objects within a scattering medium were scanned quickly with a computer-controlled Z axis table. High-resolution images of 100-/spl mu/m-wide lines and spaces were detected at scattered-to-ballistic ratios of 5/spl times/10/sup 5/: 1, with objects located near the middle of the sample seen at even higher levels. At >5/spl times/10/sup 6/: 1 ratios, a uniform background of scattered illumination degrades the image contrast unless recovered by background subtraction. Monte Carlo simulation programs designed to test the angular domain imaging concept showed that the collimator detects the shortest path length photons, as in other optical tomography methods. Furthermore, the collimator acts as an optical filter to remove scattered light while preserving the image resolution. Simulations suggest smaller channels and longer arrays could enhance detection by >100.     

High-power/high-brightness diode-pumped 1.9-/spl mu/m thulium and resonantly pumped 2.1-/spl mu/m holmium lasers

We report high power (>36 W) with beam propagation factor M/sup 2//spl sim/2 in a diode end-pumped Tm:LiYF/sub 4/ (Tm:YLF) laser generating output near the 1.91-/spl mu/m region. Using the 1.91-/spl mu/m emission and high brightness achieved with the Tm:YLF laser we resonantly end-pump the Holmium /sup 5/I/sub 7/ manifold in Ho:YAG and demonstrate /spl sim/19 W of continuous-wave (CW) output. The diode-to-Holmium optical to-optical conversion efficiency achieved is /spl sim/18%. Using a CW pumped and repetitively Q-switched configuration, the Tm:YLF pumped Ho:YAG laser achieves >16 W of output power with an M/sup 2//spl sim/1.48 at 15 kHz. A Q-switched frequency range of 9 to >50 kHz is also achieved.     

Electron spin relaxation in solids-an application to spontaneously occurring radical centre in phenol-formaldehyde resins

An outline of electron spin-relaxation is briefly presented with mechanisms and processes of spin-lattice relaxation in ionic and amorphous solids. Electron spin resonance (EPR) and pulsed EPR measurements were performed in the temperature range 4-300 K on a radical occurring in a dried resol phenol-formaldehyde resin. The radical appears in a small concentration of about 1/spl times/10/sup 16/ radicals/g in 30/spl deg/C dried samples and the number of the radicals increases continuously with time up to 2/spl times/10/sup 17/ radicals/g after 100 days. Computer simulations of the EPR spectrum show that breaking of the dimethylene ether linkage probably forms the radical during synthesis reactions. Electron spin-lattice relaxation rate increases relatively slowly on heating and at <80 K is determined by interactions with two-level tunnelling systems in the polymer structure. For higher temperatures the relaxation is governed by interactions with centres having energy levels split by 298 cm/sup -1/. Phase relaxation is described by the phase memory time with rigid lattice limit T/sub M//sup 0/=2 /spl mu/s. This time is shortened above 100 K by thermally activated radical molecule motions with activation energy 85 cm/sup -1/. The electron spin echo envelope modulation (ESEEM) spectrum shows unresolved peaks at /sup 1/H indicating strong molecular dynamics and delocalisation of the unpaired electron.     

Characterization of Si implants in p-type GaN

Si ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N/sub 2/ has been performed. X-ray diffraction analyses indicate that ion-implanted damage remains even with 1050/spl deg/C, 60 s RTA. By varying implantation and postimplantation annealing conditions, we could convert carrier concentration from p-type 3 /spl times/ 10/sup 17/ cm/sup -3/ into n-type 2 /spl times/ 10/sup 17/ cm/sup -3/ /spl sim/2 /spl times/ 10/sup 19/ cm/sup -3/. It was found that typical activation energies of Si implants in p-GaN are lower than 10 meV. Such activation energies are smaller than those observed from epitaxially grown Si-doped GaN films. A deep donor level with activation energy of 60 meV was also found from some samples. Photoluminescence studies show that the peak appears at 372 nm might be related to implantation-induced defects. It was also found that a green emission band could be observed from Si-implanted GaN. It was shown that such a green emission is related to the yellow band observed from epitaxially grown Si-doped GaN. The transport properties of these Si-implanted samples were also studied.     

Total reflection X-ray fluorescence spectrometry for the introduction of novel materials in clean-room production environments

In this paper, a number of case studies on the analysis of novel metallic contaminants on conventional and alternative substrates using the technique of total reflection X-ray fluorescence spectrometry (TXRF) is presented. Investigated materials include Si and Ge substrates, high-/spl kappa/ dielectric contaminants, and layers, and Si wafers contaminated with elements from metal gates and Cu interconnects. One focus is on the application and optimization of detection limits in direct TXRF. For the TXRF analysis of contaminants on Si wafers, a general conclusion is that a combination of three excitation sources is needed to cover the whole range of interest: a low-energy excitation (about 5 keV, e.g., WM/spl alpha/, Cr K/spl alpha/) for the low Z elements such as Na, Mg, and Al, a moderate-energy excitation (10-20 keV, e.g., WL/spl beta/, MoK/spl alpha/) for the 3d-transition elements, and a high-energy excitation (25-35 keV, e.g., W, continuum) for the analysis of elements such as Zr, Ru, Mo, and Pd. Also, for the analysis of novel substrates using direct TXRF, a careful selection of the excitation source results in better detection limits. In this way, detection limits at 10/sup 10/-10/sup 11/ at/cm/sup 2/ can be achieved, even for novel contaminants and substrates. As the International Technology Roadmap for Semiconductors (ITRS) requires control below 5/spl times/10/sup 9/ at/cm/sup 2/, the application of a preconcentration procedure such as vapor phase decomposition-droplet collection TXRF (VPD-DC-TXRF) is required. Proper use of this procedure allows the improvement of the detection limits by two to three orders of magnitude, depending on wafer size and chemical collection efficiency. The usability of this preconcentration procedure in combination with TXRF will be demonstrated for noble elements and germanium substrates.     

An ultra-line-narrowed high-power F/sub 2/ laser for dioptric design microlithography exposure tools

An ultra-line-narrowed high-power and high-repetition rate F/sub 2/ laser system has been developed for 157-nm microlithography exposure tools with dioptric projection design. The injection locked system (ILS) consists of a low-power seed laser with ultra-narrow spectral linewidth and a high-gain amplifier. More than 25-W output power, a spectral linewidth below 0.2 pm full-width at half-maximum (FWHM) and an energy stability (3-sigma) below 10% have been obtained at a 5-kHz repetition rate and for a delay time range between the two laser stages of about 15 ns. Directly compared with a master oscillator power amplifier system, the ILS had a better performance related to output energy, energy stability, and laser pulse duration.     

The impact of LOC structures on 670-nm (Al)GaInP high-power lasers

We investigate the potential of large optical cavity (LOC)-laser structures for AlGaInP high-power lasers. For that we study large series of broad area lasers with varying waveguide widths to obtain statistically relevant data. We study in detail I/sub th/, /spl alpha//sub i/, /spl eta//sub i/, and P/sub max/, and analyze above-threshold behavior including temperature stability and leakage current. We got as expected for LOC structures minimal /spl alpha//sub i//spl les/1 cm/sup -1/ resulting in /spl eta//sup d/=1.1 W/A for 64/spl times/2000 /spl mu/m/sup 2/ uncoated devices. We obtain total output powers /spl ges/3.2 W (qCW) and /spl ges/1.5 W (CW) at 20/spl deg/C.     

High-power continuous-wave intracavity frequency-doubled Nd:GdVO/sub 4/-LBO laser under diode pumping into the emitting level

The continuous-wave high power laser emission of Nd:GdVO/sub 4/ at the fundamental wavelength of 1.06 /spl mu/m and its 531-nm second harmonic obtained by intracavity frequency doubling with an LBO nonlinear crystal is investigated under pumping by diode laser at 808 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 5/2/ transition) and 879 nm (on the /sup 4/I/sub 9/2//spl rarr//sup 4/F/sub 3/2/ transition). It is shown that, in spite of a lower absorption at 879 nm, the infrared emission is comparable under these two wavelengths of pump. The green emission performances were, however, improved by the 879 nm pump: 5.1 W at 531 nm with M/sup 2/=1.46 and 0.31 overall optical-to-optical efficiency was obtained from a 3-mm-thick 1-at.% Nd:GdVO/sub 4/ laser medium and a 10-mm-long LBO nonlinear crystal in a Z-type cavity for 16.5 W pump power. In similar conditions, the maximum green power for the 808 nm pump was 4.4 W, with 0.26 overall optical-to-optical efficiency and M/sup 2/=3.40 beam quality; at this pump wavelength the green emission shows evident saturation for pump power in excess of 9.9 W. This behavior is connected with the enhanced heat generation under 809-nm pumping, as evidenced by the increased thermal lensing of the fundamental emission. A careful alignment of the laser enables emission almost free of chaotic intensity fluctuations.     

Determination of piezoelectric and pyroelectric coefficients and thermal diffusivity of 1-3 PZT/epoxy composites

PZT/epoxy composites with 1-3 connectivity were prepared using the dice-and-fill technique. The samples were poled with an electric field of 10 MV/m for 30 minutes at room temperature. The piezoelectric and pyroelectric coefficients for the composites were measured. From the laser interferometric measurements, it was found that the piezoelectric d/sub 33/ coefficients for the composites were independent of the volume fraction and averaged (190 /spl mnplus/ 10) pm/V, which was about half of the measured value of lead zirconate titanate (PZT) ceramic. Measurements of the pyroelectric coefficient showed that the coefficients increased with the ceramic content and reached values as large as 54 /spl mu/C/m/sup 2/ /spl deg/C. The thermal diffusivity of the composites was also determined using a technique based on the measurement of the phase retardation of a thermal wave passing through the material. The average value for the composites was (2.15/spl mnplus/ 0.05) /spl times/ 10/sup -7/ m/sup 2//s.     

Laser beam combining for high-power, high-radiance sources

Beam combining of laser arrays with high efficiency and good beam quality for power and radiance (brightness) scaling is a long-standing problem in laser technology. Recently, significant progress has been made using wavelength (spectral) techniques and coherent (phased array) techniques, which has led to the demonstration of beam combining of a large semiconductor diode laser array (100 array elements) with near-diffraction-limited output (M/sup 2//spl sim/1.3) at significant power (35 W). This paper provides an overview of progress in beam combining and highlights some of the tradeoffs among beam-combining techniques.     

Wafer level reliability and lifetime analysis of InGaAsP/InP quantum-well Fabry-Perot laser diode

This paper investigated the reliability of semiconductor 1.3-/spl mu/m multiquantum-well (MQW) Fabry-Perot laser diodes (LDs) in a quarter 2-in wafer level that are measured to have uniform threshold currents, slope efficiencies, and wavelengths within 4% of the maximum deviation. By performing the accelerated aging test under a constant optical power of 3 mW at 85/spl deg/C for 2100 h, the lifetime of the fabricated optoelectronic devices was estimated, where the failure rate was matched on the fitted line of the lognormal distribution model resulting in the mean-time-to-failure (MTTF) of 2/spl times/10/sup 6/ h operating at room temperature.     

Comparative study on the spectroscopic properties of Nd:GdVO/sub 4/ and Nd:YVO/sub 4/ with hybrid process

We have proposed a hybrid procedure for determining spectroscopic parameters for uniaxial solid-state laser crystals. Using our procedure, the spectroscopic properties of Nd:GdVO/sub 4/ were evaluated and compared to those of Nd:YVO/sub 4/. As a result, the peaks of absorption and stimulated emission cross sections of Nd:GdVO/sub 4/ in /spl pi/-polarization were determined to be 2.6 and 10.3/spl times/10/sup -19/ cm/sup 2/, respectively, and were smaller than those of Nd:YVO/sub 4/. On the other hand, the fluorescence lifetime of 1 at% Nd:GdVO/sub 4/ was evaluated to be 83.4 /spl mu/s, and was similar to 84.1 /spl mu/s of 1 at% Nd:YVO/sub 4/. Therefore, the product of stimulated emission cross section and fluorescence lifetime (/spl sigma//sub em//spl tau//sub f/ product) of Nd:GdVO/sub 4/ was smaller than that of Nd:YVO/sub 4/ under 1 at% of Nd/sup 3+/ doping concentration. The radiative lifetime of spontaneous emission of Nd:GdVO/sub 4/ was 168 /spl mu/s and was 1.9 times longer than that of Nd:YVO/sub 4/. Because of the low value of radiative quantum efficiency of Nd:GdVO/sub 4/ (50%), careful cavity design is required for creating a well performing solid-state laser with Nd:GdVO/sub 4/, based on the larger /spl sigma//sub em//spl tau//sub f/ product rather than the /spl sigma//sub em//spl tau//sub f/ product of Nd:YAG.     

High-average power EUV light source for the next-generation lithography by laser-produced plasma

Laser-produced plasma is expected to fulfill the strict requirement as an extreme ultraviolet (EUV) light source for the next-generation lithography with 115-W average power at the intermediate focus, in terms of stability, minimum contamination, and cost of ownership. A liquid xenon micro jet is employed in our experimental facility to confirm the scalability up to the 115-W clean output power. The present experimental device is composed of a 1-kW 10-kHz 6-ns Nd:YAG laser with a xenon jet of up to 50-/spl mu/m diameter of 35 m/s speed inside a vacuum chamber, combined with a xenon recirculation system. The observed EUV power is 4 W at 13.5 nm (2% bandwidth, 2/spl pi/sr) from the plasma source with 0.5% stability (1 /spl sigma/, 50-pulse moving average). Debris mitigation and contamination control is now studied for fast ions by time-of-flight measurements, and confinement and exhaust by a magnetic field is shown to be effective. Xe/sup +/ to Xe/sup 13+/ ions were observed with Xe/sup 2+/ being the main charged state. Experimental study is presented on these subjects and further parametric study on the laser wavelength and pulsewidth is reported, discussing the scalability toward the realization of a 115-W system.     

Dynamics of the discharge-pumped vacuum ultraviolet Kr/sub 2//sup */ laser

A numerical simulation code has been developed to investigate the dynamics of the discharge-pumped vacuum ultraviolet Kr/sub 2//sup */ laser. Dynamics of spectral narrowing of the laser emission down to 0.2-nm full-width at half-maximum (FWHM) was well reproduced. Small signal gain behavior as a function of the applied voltage was predicted to have a gain coefficient of 0.08 cm/sup -1/ at the applied voltage of 32 kV, which was more than twice as large as the experimentally observed maximum gain value (0.035 cm/sup -1/). The code predicted that the laser output energy could become more than 1 mJ at the applied voltage at the Kr gas pressure of 10 atm.     

Analysis of noise mechanisms limiting the frequency stability of microwave signals generated with a femtosecond laser

Excess phase noise is observed in the spectrum of the microwave signal extracted from a photodetector illuminated by a train of ultrashort light pulses from the femtosecond laser. This noise affects the stability of frequency transfer from optical to microwave domains with the femtosecond laser. Some contributions to the excess phase noise are related to intrinsic beam-pointing fluctuations of the femtosecond laser and optical power fluctuations of the detected light. These factors contribute to excess phase noise at the harmonics of the pulse repetition rate due to power-to-phase conversion in the photodetector, spatially dependent time delays, and photodiode nonlinearities that distort the pulse shape. With spatial filtering of the laser beam and active control of its power, the additional fractional frequency fluctuations of pulse repetition rate associated with the excess noise of the photodetection process were reduced from 6/spl middot/10/sup -14/ to approximately 3/spl middot/10/sup -15/ over 1 s of averaging. The effects of other noise mechanisms, such as laser shot noise and phase noise introduced by a microwave amplifier, were also examined but were found to be at a less significant level.     

Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET

The temperature-dependent characteristics of an InGaP/InGaAs/GaAs heterostructure field-effect transistor (HFET), using the (NH/sub 4/)/sub 2/S/sub x/ solution to form the InGaP surface passivation, are studied and demonstrated. The sulfur-passivated device shows significantly improved dc and RF performances over a wide temperature range (300-510 K). With a 1/spl times/100-/spl mu/m/sup 2/ gate-dimension HFET by (NH/sub 4/)/sub 2/S/sub x/ treatment, the considerably improved thermal stability over dc performances including lower temperature variation coefficients on the turn-on voltage (-1.23 mV/K), the gate-drain breakdown voltage (-0.05 mV/K), the gate leakage current (1.04 /spl mu/A/mm/spl middot/K), the threshold voltage (-1.139 mV/K), and the drain-saturation-current operating regimes (-3.11/spl times/10/sup -4//K) are obtained as the temperature is increased from 300 to 510 K. In addition, for RF characteristics, the sulfur-passivated device also shows a low degradation rate on drain-saturation-current operating regimes (-3.29/spl times/10/sup -4//K) as the temperature is increased from 300 to 400 K. These advantages provide the promise for high-speed high-frequency high-temperature electronics applications.