砷化镓衬底上螺旋电感的建模和分析

针对砷化镓(GaAs)衬底上螺旋电感提出了一种改进形式的集总参数等效电路模型,该等效电路模型能很好地表征螺旋电感的高频效应.同时,应用电磁场全波分析方法对螺旋电感进行仿真,并分析各参数对电感性能的影响.从得到的散射参数中提取出有效电感、Q值和自谐振频率.基于参数优化方法提取等效电路模型中各元件值,并利用曲线拟合技术给出其相应的闭合表达式.这些表达式可用于射频和微波集成电路的设计,从而提高电路设计的性能和效率.     

An X-band high-power amplifier using SiGe/Si HBT and lumped passivecomponents

We report the design and fabrication of a compact microwave monolithic integrated circuit (MMIC) amplifier, which demonstrates high output power at X-Band. A single-stage power amplifier is demonstrated, with a double-mesa type SiGe/Si HBT as the active device and spiral inductors and MIM capacitors as lumped passive components. At 8.4 GHz, a linear gain of 8.7 dB, an output power at peak efficiency of 23 dBm, and a saturated output power P_sat of 25 dBm, are measured. To our knowledge, this is the first MMIC X-Band power amplifier using SiGe/Si HBTs     

射频CMOS平面螺旋电感2-π等效电路模型参数的提取

从有理分式拟合方法出发,提出了用于射频CMOS平面螺旋电感2-π等效电路模型参数提取的新方法.通过比较提参后等效电路给出的S参数和实验测量的S参数,证明该方法的精度很高.此外,提参的策略非常直接,因此容易在CAD里面编程实现.提参得到的等效电路模型对于射频电路设计者来说也是非常有用的.     

A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

A new T-model has been developed to accurately simulate the broadband characteristics of on-Si-chip spiral inductors, up to 20 GHz. The spiral coil and substrate RLC networks built in the model play a key role responsible for conductor loss and substrate loss in the wideband regime, which cannot be accurately described by the conventional /spl pi/-model. Good match with the measured S-parameters, L(/spl omega/), Re(Z/sub in/(/spl omega/)), and Q(/spl omega/) proves the proposed T-model. Besides the broadband feature, scalability has been justified by good match with a linear function of coil numbers for all model parameters employed in the RLC networks. The satisfactory scalability manifest themselves physical parameters rather than curve fitting. A parameter extraction flow is established through equivalent circuit analysis to enable automatic parameter extraction and optimization. This scalable inductor model will facilitate optimization design of on-chip inductor and the accuracy proven up to 20 GHz can improve RF circuit simulation accuracy demanded by broadband design.     

硅基平面螺旋电感的等效电路模型和参数提取

针对螺旋电感传统等效电路模型的不足,提出了一种改进形式的集总参数等效电路模型.该等效电路模型能很好地反映出电感参数随频率变化的实际效应,可适用于从低频到自谐振频率的宽频带范围.同时,应用电磁场全波分析方法对CMOS工艺下平面螺旋电感进行仿真分析.从得到的散射参数中提取电感L、Q值及自谐振频率.基于参数优化和曲线拟合技术,给出了等效电路模型中各个元件值的多变量闭合表达式.这些表达式可方便地用于集成电路的设计和优化,从而提高电路设计的性能和效率.     

Characteristic-function approach to parameter extraction for asymmetric equivalent circuit of on-chip spiral inductors

A novel approach to parameter extraction for an asymmetric equivalent circuit of silicon-on-chip spiral inductors based on measured S-parameter is proposed. The current methodology is based on the linear dependence of a set of characteristic functions on other functions or variables such as /spl omega//sup 2/ in a certain frequency range, and the model parameters can be derived from the corresponding linear coefficients. As applied to an asymmetric single-/spl pi/ equivalent circuit, the extracted parameters can simulate the inductor with a high precision up to 10 GHz.     

射频集成电感器的快速傅立叶变换模拟及制备

应用磁像法和快速傅立叶变换（FFT）法对单片微波集成电路（MMIC）的薄膜平面射频集成电感器进行了电磁学模拟，并把模拟结果和有限元法（FEM）模拟的结果进行了比较。根据模拟结果，对薄膜平面射频集成电感器结构参数和加工参数进行了优化，改进了薄膜平面频集成电感器的工艺方案。最后结合薄膜平面射频集成电感器薄膜的高频损耗分析，讨论了平面薄膜集成电感器薄膜微细加工技术。     

A Simple Model Parameter Extraction Methodology for an On‐Chip Spiral Inductor

In this letter, a simple model parameter extraction methodology for an on‐chip spiral inductor is proposed based on a wide‐band inductor model that incorporates parallel inductance and resistance to model skin and proximity effects, and capacitance to model the decrease in series resistance above the frequency near the peak quality factor. The wide‐band inductor model does not require any frequency dependent elements, and model parameters can be extracted directly from the measured data with some curve fitting. The validity of the proposed model and parameter extraction methodology are verified with various size inductors fabricated using 0.18 µm CMOS technology.     

应用于无线收发机关端的片上螺旋型电感的研究

这篇文章探讨了在现在的标准工艺条件下集成电感的设计和分析问题,包括片上螺旋型电感的有关版图,损耗机制,模型和参数提取问题,最后以一种被学术界广泛妆受的模拟工具对电感的有关设计进行了模拟,给出了模拟结果,并进行了分析,给出了设计片上电感应遵循的原,有着工艺技术和人们对电感的寄生效应的认识的加深,可以相信片上集成电感在高频电路中的应用将越来越广泛。     

新颖的常规硅工艺实现的侧向螺线型片上集成电感

提出了一种用常规硅工艺实现的片上集成电感的螺线型新结构．制造工艺使用标准双层金属布线的常规硅工艺．测量了螺线型集成电感的S参数，从测量数据计算了集成电感的参量．实验的侧向螺线型片上集成电感的Q值峰值为1.3，电感量为22nH．对用两层金属层实现的侧向螺线型片上集成电感和单层金属的常规平面螺旋电感的实验结果进行了比较，电感量和Q值与常规平面螺旋电感有可比性．     

Improved planar spiral transformer theory applied to a miniaturelumped element quadrature hybrid

In this paper, an improved method of determining the primary-to-secondary coupling capacitance for planar spiral transformers (PST's) is presented, which enhances previous work. A more general monolithic microwave integrated circuit (MMIC) compatible lumped element multisection model is also presented based on symmetric-width uniformly coupled transmission lines. These techniques were developed to design a 90° hybrid as a MMIC with a center frequency of 2.5 GHz. The design was frequency scaled to 0.5 GHz and fabricated in the microwave integrated circuit (MIC) for verification. Producibility is enhanced and coupling is effectively increased with the novel use of series capacitors which cancel some of the self-inductance of the transformers. Measured results are presented for both a quadrature hybrid and the individual PST used in the quadrature hybrid. The measured results show excellent agreement with the computer models     

A miniaturized Wilkinson power divider with CMOS active inductors

A miniaturized Wilkinson power divider implemented in a standard 0.18-/spl mu/m CMOS process is presented in this letter. By using active inductors for the circuit implementation, a significant area reduction can be achieved due to the absence of distributed components and spiral inductors. The power divider is designed at a center frequency of 4.5GHz for equal power dividing with all ports matched to 50/spl Omega/. Drawing a dc current of 9.3mA from a 1.8-V supply voltage, the fabricated circuit exhibits an insertion loss less than 0.16dB and a return loss better than 30dB at the center frequency while maintaining good isolation between the output ports. The active area of the miniaturized Wilkinson power divider is 150/spl times/100/spl mu/m/sup 2/, which is suitable for system integration in monolithic microwave integrated circuit (MMIC) applications.     

A comprehensive compact-modeling methodology for spiral inductors in silicon-based RFICs

A new comprehensive wide-band compact-modeling methodology for on-chip spiral inductors is presented. The new modeling methodology creates an equivalent-circuit model consisting of frequency-independent circuit elements. A fast automated extraction procedure is developed for determining the circuit element values from two-port S-parameter measurement data. The methodology is extremely flexible in allowing for accurate modeling of general classes of spiral inductors on high- or low-resistivity substrate and for large spirals exhibiting distributed trends. The new modeling methodology is applied to general classes of spirals with various sizes and substrate parameters. The extracted models show excellent agreement with the measured data sets over the frequency range of 0.1-10 GHz.     

Modeling of double-π equivalent circuit for on-chip symmetric spiral inductors

We present a novel methodology to extract model parameters from measured S-parameters for silicon on-chip center-tapped symmetric spiral inductors. The double-π equivalent circuit topology is employed in which conductor skin effect is considered. The automated extraction procedure based on modified differential evolution is demonstrated to be efficient and effective. To verify the accuracy of the new methodology, 17 center-taped symmetric inductors were fabricated and the equivalent circuit parameters were extracted from two-port S-parameters measurements over the frequency range of 0.3–8.5 GHz. The excellent accuracy of the results demonstrates the flexibility of the modeling methodology. The new methodology should be useful in the design of RF ICs and mixed signal ICs.     

双层螺旋RF MEMS电感的模拟与设计

分析了双层螺旋电感的等效电路模型,研究了一种与传统CMOS工艺兼容的MEMS工艺,通过腐蚀电感结构下的硅衬底使电感悬空.利用HFSS软件对一些双层螺旋微电感进行了模拟,模拟结果表明,相比传统单层电感,双层电感可以减少60%的芯片面积,10nH的电感也只需要很小的面积,经过MEMS后处理的双层螺旋电感的最大Q值都超过了20.     

Integrated RF components in a SiGe bipolar technology

Several components for the design of monolithic RF transceivers on silicon substrates are presented and discussed. They are integrated in a manufacturable analog SiGe bipolar technology without any significant process alterations. Spiral inductors have inductance values in the range of ~0.15-80 nH with typical maximum quality-factors (Q_max ) of 3-20. The Q_max's are highest if the doping concentration under the inductors is kept minimum. It is shown that the inductor area is an important parameter toward optimization of Q_max at a given frequency. The inductors can be represented in circuit design by a simple lumped-element model. MOS capacitors have Q's of ~20/f (GHz)/C(pF), metal-insulator-metal (MIM) capacitors reach Q's of ~80/f (GHz)/C(pF), and varactors with a 40% tuning range have Q's of ~70/f (GHz)/C(pF). Those devices can he modeled by using lumped elements as well. The accuracy of the modeling is verified by comparing the simulated and the measured high-frequency characteristics of a fully integrated, passive-element bandpass filter     

Analysis, design, and optimization of spiral inductors andtransformers for Si RF ICs

Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, low-order, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory     

Sub-nH Inductor Modeling and Design in 90-nm CMOS Technology for Millimeter-Wave Applications

Inductor design is an important issue in millimeter-wave CMOS circuits. In these frequencies the required inductance is very small and hence special structure is required for inductors. The quality factor is the most important design parameter for these inductors, especially in CMOS process. To incorporate these inductors in circuit simulation, a simple lumped model is necessary. This work proposes a simple and accurate model, developed for design and optimization of such inductors. This model is based on quasi-transverse-electromagnetic-mode assumption. To increase the model accuracy we have separately modeled the short-end section of the inductor. Model parameters are calculated using reported analytic equations and some new empirical equations. Using this model we have designed and optimized a 250-pH inductor with different shield layers, for STMicroelectronics 90-nm digital CMOS process. The accuracy of the model parameters and the evaluation of the model has been carried out using 2-D and method-of-momentss electromagnetic solvers in Advanced Design System, with the substrate modeled using foundry design kit data.     

A lumped scalable model for silicon integrated spiral inductors

A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results of this analysis and three-dimensional electromagnetic simulation guidelines, several circular inductors were integrated on a radial patterned ground shield for model validation purposes. The model employs a novel equation for series resistance with only one fitting parameter extracted from experimental measurements. All other model elements were related to technological and geometrical data by using rigorous analytical equations. The model was validated using one- and two-port measured performance parameters of 45 integrated inductors, and excellent agreement was found for all considered geometries up to frequencies well above self-resonance.     

A Broadband and Scalable Lumped Element Model for Fully Symmetric Inductors Under Single-Ended and Differentially Driven Operations

A broadband and scalable 2-T model is developed to accurately simulate fully symmetric inductors with various dimensions. The 2-T model is defined to reflect the structure of an equivalent circuit with two identical T-model circuits. Two-step de-embedding is assisted by open and through pads for extraction of intrinsic characteristics. The accuracy is validated by 3-D full- wave electromagnetic simulation. A novel parameter extraction flow is established, and a single set of model parameters is derived to be valid for both single-ended and differentially driven topologies. The broadband accuracy is proven by a good match with S-parameters, L(omega), Re(Z_ln(omega)), and Q(omega) over frequencies up to 20 GHz. The scalability is justified by good fitting with either a linear or a parabolic function of spiral coil radii. Furthermore, all model parameters are frequency independent so as to ensure computation efficiency. This 2-T model consistently predicts the enhancement of Q_max by 20%-30% for the symmetric inductors under a differential excitation. The Q improvement is even better than 100% over broader frequencies beyond f_m (Q_max).