Hybrid photovoltaic devices from regioregular polythiophene and ZnO nanoparticles composites

The nano size zinc oxide (ZnO) was successfully synthesized at low temperature solution method. The structural characterization, size and distribution of synthesized ZnO particles were performed using X-ray diffraction (XRD) and neutron scattering technique. The hybrid polymer-metal oxide bulk heterojunction solar cell has been fabricated by blending of ZnO and regioregular poly(3-hexylthiophene) (P3HT) through solution process and flow coating on the flexible substrate. The decrease in the photoluminescence (PL) emission intensity more than 79% for ZnO:P3HT composites film indicates high charge generation efficiency. The cell shows the V_oc and I_sc of 0.33 V and 6.5 mA/cm², respectively. The performance and stability of cell were investigated using UV illumination of white light.     

Highly efficient photon-to-electron conversion with mercurochrome-sensitized nanoporous oxide semiconductor solar cells

Dye-sensitized solar cells based on nanoporous oxide semiconductor thin films such as TiO₂, Nb₂O₅, ZnO, SnO₂, and In₂O₃ with mercurochrome as the sensitizer were investigated. Photovoltaic performance of the solar cell depended remarkably on the semiconductor materials. Mercurochrome can convert visible light in the range of 400–600 nm to electrons. A high incident photon-to-current efficiency (IPCE), 69%, was obtained at 510 nm for a mercurochrome-sensitized ZnO solar cell with an I⁻/I₃⁻ redox electrolyte. The solar energy conversion efficiency under AM1.5 (99 mW cm⁻²) reached 2.5% with a short-circuit photocurrent density (J_sc) of 7.44 mA cm⁻², a open-circuit photovoltage (V_oc) of 0.52 V, and a fill factor (ff) of 0.64. The J_sc for the cell increased with increasing thickness of semiconductor thin films due to increasing amount of dye, while the V_oc decreased due to increasing of loss of injected electrons due to recombination and the rate constant for reverse reaction. Dependence of photovoltaic performance of mercurochrome-sensitized solar cells on semiconductor particles, light intensity, and irradiation time were also investigated. High performance of mercurochrome-sensitized ZnO solar cells indicate that the combination of dye and semiconductor is very important for highly efficient dye-sensitized solar cells and mercurochrome is one of the best sensitizers for nanoporous ZnO photoelectrode. In addition, a possibility of organic dye-sensitized oxide semiconductor solar cells has been proposed as well as one using metal complexes.     

Photovoltaic characteristics of phosphorus-doped amorphous carbon films grown by r.f. plasma-enhanced CVD

The phosphorus-doped amorphous carbon (n-C:P) films were grown by r.f. power-assisted plasma-enhanced chemical vapor deposition at room temperature using solid phosphorus target. The influence of phosphorus doping on material properties of n-C:P based on the results of simultaneous characterization are reported. Moreover, the solar cell properties such as series resistance, short circuit current density (J_sc), open circuit current voltage (V_oc), fill factor (FF) and conversion efficiency (η) along with the spectral response are reported for the fabricated carbon based n-C:P/p-Si heterojunction solar cell were measured by standard measurement technique. The cells performances have been given in the dark I–V rectifying curve and I–V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm², 25 °C). The maximum of V_oc and J_sc for the cells are observed to be approximately 236 V and 7.34 mA/cm², respectively for the n-C:P/p-Si cell grown at lower r.f. power of 100 W. The highest η and FF were found to be approximately 0.84% and 49%, respectively. We have observed the rectifying nature of the heterojunction structures is due to the nature of n-C:P films.     

5–20 MeV proton irradiation effects on GaAs/Ge solar cells for space use

This paper reports the high-energy proton irradiation effects on GaAs/Ge space solar cells. The solar cells were irradiated by protons with energy of 5–20 MeV at a fluence ranging from 1×10⁹ to 7×10¹³ cm⁻², and then their electric parameters were measured at AM0. It was shown that the I_sc, V_oc and P_max degrade as the fluence increases, respectively, but the degradation rates of I_sc, V_oc and P_max decrease as the proton energy increases, and the degradation is relative to proton irradiation-induced defect Ec−0.41 eV in irradiated GaAs/Ge cells.     

Low-energy proton irradiation effects on GaAs/Ge solar cells

This paper reports the low-energy proton irradiation effects on GaAs/Ge solar cells for space use. The proton irradiation experiments were performed with a fluence of 1.2×10¹³ cm⁻², energies ranging from 0.1 to 3.0 MeV. The results obtained demonstrate that the irradiation with a proton energy of 0.3 MeV gives rise to the most degradation rates of I_sc, V_oc and P_max of the solar cells with no coverglass, which is related to the proton irradiation-induced vacancies near the pn junction in GaAs/Ge cells. The degradation rates of I_sc, V_oc and P_max of the solar cells with coverglass increase as the proton energy increases due to the cascade ions induced by collision processes. It is found that the coverglass has an obvious protection effect against the irradiation with the proton energy below 0.5 MeV.     

Influence of alkylpyridine additives in electrolyte solution on the performance of dye-sensitized solar cell

The influence of alkylpyridines additive to an I⁻/I₃⁻ redox electrolyte in acetonitrile on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell was studied. I–V measurements were performed using more than 30 different alkylpyridines. The alkylpyridine additives showed a significant influence on the performance of the cell. All the additives decreased the short-circuit photocurrent (J_sc), but most of the alkylpyridines increased the open-circuit photovoltage (V_oc) and fill factor (ff) of the solar cell. The results of the molecular orbital calculations suggest that the dipole moment of the alkylpyridine molecules correlate with the J_sc of the cell. These results also suggest that both the size and ionization energy of pyridines correlate with the V_oc of the cell. Under AM 1.5 (100 mW/cm²), the highest solar energy conversion efficiency (η) of 7.6% was achieved by using 2-propylpyridine as an additive, which was more effective than the previously reported additive, 4-t-butylpyridine.     

Influence of alkylaminopyridine additives in electrolytes on dye-sensitized solar cell performance

The influence of alkylaminopyridine additives on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) dye-sensitized TiO₂ solar cell with an I⁻/I₃⁻ redox electrolyte in acetonitrile was studied. The current–voltage characteristics were measured for more than 20 different alkylaminopyridines under AM 1.5 (100 mW/cm²). The alkylaminopyridine additives tested had varying effects on the performance of the cell. All the additives decreased the short circuit photocurrent density (J_sc), but increased the open-circuit photovoltage (V_oc) of the solar cell. Molecular orbital calculations imply that the dipole moment of the alkylaminopyridine molecules influences the J_sc of the cell and that the size, solvent accessible surface area, and ionization energy all affect the V_oc of the cell. The highest V_oc of 0.88 V was observed in an electrolyte containing 4-pyrrolidinopyridine, which is comparable to the maximum V_oc of 0.9 V for a cell consisting of TiO₂ electrode and I⁻/I₃⁻ redox system.     

High-efficiency CIGS solar cells with modified CIGS surface

CIGS films were treated in In–S aqueous solution for high-efficiency CIGS solar cells. The In–S aqueous solution contained InCl₃ and CH₃CSNH₂ (thioacetamide). The In–S treatment modified the CIGS surface favorably for high-efficiency CIGS solar cells as evidenced by the increase in V_oc, J_sc and FF. The In–S treatment formed thin CuInS₂ layer on the CIGS surface which contributes to the high efficiency and stable performance of the CIGS solar cell. The best cell showed an efficiency of 17.6% (V_oc=0.649 V, J_sc=36.1 mA/cm² and FF=75.1%) without any annealing and light soaking before I–V measurement.     

Influence of pyrazole derivatives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized TiO2 solar cell performance

The influence of pyrazole additives in an I⁻/I₃⁻ redox electrolyte solution on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′-bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics of the cell were measured using 18 different pyrazole derivatives. All of the pyrazole additives enhanced the open-circuit photovoltage (V_oc) and the solar energy conversion efficiency (η), but reduced the short-circuit photocurrent density (J_sc). Most of the pyrazoles improved fill factor (ff). The physical and chemical properties of the pyrazoles were computationally calculated in order to elucidate the reasons for the additive effects on cell performance. The greater the partial charge of the nitrogen atom at position 2 in the pyrazole group, the larger the V_oc, but the smaller the J_sc values. As the dipole moment of the pyrazole derivatives increased, the V_oc value increased, but the J_sc value decreased. The V_oc of the cell also increased as the ionization energy of the pyrazoles decreased. These results suggest that the electron donicity of the pyrazole additives affected the interaction with the nanocrystalline TiO₂ photoelectrode, the I⁻/I₃⁻ electrolyte, and the acetonitrile solvent, which changed the Ru(II)-dye-sensitized solar cell performance.     

CIS thin film solar cells with evaporated InSe buffer layers

This paper describes the investigations of CIS-based solar cells with a new In_xSe_y (IS) buffer layer. Studies were concentrated on determining the deposition conditions to get In_xSe_y thin films with adequate properties to be used in substitution of the CdS buffer layer, usually employed in the fabrication of this type of devices. Before the solar cell fabrication, the buffer layers grown by evaporation of the In₂Se₃ compound were characterized through transmittance and X-ray diffraction measurements. It was found that good results can be obtained using indium selenide film as the buffer layer, grown in the In₂Se₃ phase.Solar cells with structure Mo/CIS/In₂Se₃/ZnO were fabricated. The ZnO layer was deposited by reactive evaporation and the absorber CIS layer was grown on Mo by a two-stage process. The preliminary results obtained with this type of solar cells are J_sc=30.8 mA/cm², V_oc=0.445 V, FF≈0.6 and η=8.3% with an irradiance of 100 mW/cm². Solar cells fabricated using a CdS buffer layer deposited by CBD on CIS substrate, prepared under the same conditions used in the fabrication of Mo/CIS/In₂Se₃/ZnO cells, gave the following results: V_oc=0.43 V, J_sc=34 mA/cm², FF≈0.63 and η=9.2%.     

Photoelectrochemical behavior of chemically deposited CdSe and coupled CdS/CdSe semiconductor films

Photoelectrochemical effects at chemically deposited CdSe thin films (2000 Å) coupled with as-prepared and air annealed (250°C) CdS films have been investigated by monitoring open-circuit voltage (V_oc) and short-circuit current density (I_sc) at varying incident light intensities and for different heat-treatments temperatures. Two consecutive chemical baths were used in the coupled system. Each bath has been optimized in earlier studies for the deposition of highly photosensitive CdS and CdSe thin films. The photoelectrochemical behavior of single and coupled films was investigated in ferricyanide redox couples. The enhanced short-circuit photocurrent of the as-deposited CdS/CdSe system, despite their lower photosensitivity, indicated that charge separation improved in the coupled system. The role of post-deposition thermal treatments in improving the photoelectrochemical cell characteristics and stability of coupled semiconductors was investigated. Excellent I–V properties were obtained for CdSe and CdS₂₅₀/CdSe photoelectrodes annealed at 280°C. For the coupled system: V_oc=960 mV; I_sc=8.6 mA/cm²; fill factor (ff)=0.53 and cell efficiency (η)=4.2%. The linearity of V_oc/ln(I_L) and I_sc/I_L plots supports the Schottky–Mott model for these interfaces. The stability of the coupled photoanode is superior to that of the CdSe only-film for the initial 3 h.     

Polycrystalline silicon solar cells with V-grooved surface

Mechanical grooving techniques are effective to uniform reduction of surface reflectance over all polycrystalline silicon solar cells. Furthermore, to reduce the surface reflectance, a V-shaped grooving technique was newly examined. To improve the short-circuit current (I_sc) and the open-circuit voltage (V_oc), a shallow n⁺/p junction was also examined for the grooved surface. By forming the shallower junction, both I_sc and V_oc remarkably increased. Consequently, a record high conversion efficiency of 17.2% has been confirmed at Japan Quality Assurance Organization (JQA) for a 10 × 10 cm² area polycrystalline silicon solar cell.     

Influence of growth conditions on photovoltaic effect of ZnO/Si heterojunction

A series of heterojunctions consisting of intrinsic zinc oxide (ZnO) films and p-type Si substrates have been prepared by DC reactive sputtering. The ZnO films were grown at different conditions, and the influence of growth conditions on photovoltaic (PV) property was discussed. It was found that both growth temperature and oxygen partial pressure play important roles for enhancing the PV effect of the samples. By optimizing growth conditions, the PV efficiency has been improved and also by more magnitudes. The open circuit voltage (V_oc) and short circuit current (I_sc) per square centimeter arrived at 350 mV and 2.5 mA, respectively. The variation mechanism of PV effect with growth conditions has been investigated in order to understand the photoelectric conversion behavior of the ZnO/Si heterojunction.     

Effect of Au,Ag and Cu thin films' thickness on the electrical parameters of metal-porous silicon direct hydrogen fuel cell

The effect of the thickness of the gold, silver and cupper films on the electrical properties such as open circuit voltage (V_oc) and short circuit current (I_sc), in the direct hydrogen fuel cell, which uses water as a source of hydrogen, is studied by fabricating Metal/Porous Silicon/n-Silicon/Indium structures. The Porous Silicon (PS) layer on n-type (111) oriented silicon wafers were prepared by anodization. The thin films of Au or Ag or Cu with different thicknesses between 120 and 600 nm were deposited onto the PS surface by the electron-beam technique. The obtained results indicated that V_oc and I_sc, strongly depend on the Au, Ag and Cu layer thicknesses. The Au/PS/n-Si structure generated highest V_oc and I_sc values for all thicknesses of Au film. The best values of V_oc and I_sc were obtained at 325 nm as 0.89 V and 0.021 mA for Au, at 350 nm as 0.75 V and 0.017 mA for Ag, at 350 nm as 0.50 V and 0.010 mA, respectively.     

Hybrid solar cells based on MEH-PPV and thin film semiconductor oxides (TiO2, Nb2O5, ZnO, CeO2 and CeO2–TiO2): Performance improvement during long-time irradiation

Performance improvement of hybrid solar cells (HSC) applying five different thin film semiconductor oxides has been observed during long-time irradiation in ambient atmosphere. This behavior shows a direct relation between HSC and oxygen content from the environment. Photovoltaic devices were prepared as bi-layers of thin film semiconducting oxides (TiO₂, Nb₂O₅, ZnO, CeO₂–TiO₂ and CeO₂) and the polymer MEH-PPV, with a final device configuration of ITO/Oxide_{thin film}/MEH-PPV/Ag. The oxides were prepared as thin transparent films from sol–gel solutions. The photovoltaic cells were studied in ambient atmosphere by recording the initial values of open circuit voltage (V_oc) and current density (I_sc). Solar decay curves presented as the measurement of the short circuit current as a function of time, IV curves and photophysical analyses were also carried out for each type of device. Solar cells with TiO₂ thin films showed the best performance with maximum V_oc as high as −0.74 V and I_sc of 0.4 mA/cm². Solar decay analyses showed that the devices require a stabilization period of several hours in order to reach maximum performance. In the case of TiO₂, Nb₂O₅ and CeO₂–TiO₂, the maximum current density was observed after 15 h; for CeO₂, the maximum performance was observed after 30 h. The only exception was observed with devices applying ZnO in which the current density decreased drastically and degraded the polymer in just a couple of hours.     

Influence of alkyl dihalide gelators on solidification of dye-sensitized solar cells

Quasi-dye-sensitized solar cells were prepared by using ionic liquid-type electrolytes and gelators consisting of polyvinylpyridine and alkyl dihalides. Gelation occurred by the reaction of polyvinylpyridine and alkyl dihalides. When the chain length of the dihalides was varied, the short-circuit current (J_sc) increased with an increase in the chain length. However, the open-circuit voltage (V_oc) and fill factor (ff) slightly decreased. The increase in J_sc was brought about by the decrease in the interfacial resistances between the gel electrolyte and the counter electrode. In addition, the increase in the J_sc was explained by increases in the apparent diffusion coefficient of I⁻/I₃⁻ when the chain length increased. Decreases in V_oc and ff were explained by back-electron transfers from TiO₂ to iodine in the electrolytes. V_oc of the cells solidified by alkyldiiodide was lower than that solidified by alkyldichloride or alkyldibromide. It was explained by negatively shifted redox potential of I⁻/I₃⁻, compared with those for Cl⁻/Cl₂ or Br⁻/Br₂.     

p-doped μc-Si:H window layers prepared by hot-wire CVD for amorphous solar cell application

We report on boron-doped μc-Si:H films prepared by hot-wire chemical vapor deposition (HWCVD) using silane as a source gas and trimethylboron (TMB) as a dopant gas and their incorporation into all-HW amorphous silicon solar cells. The dark conductivity of these films was in the range of 1–10 (Ω cm)⁻¹. The open circuit voltage V_oc of the solar cells was found to decrease from 840 mV at low hydrogen dilution H-dil=91% to 770 mV at high H-dil =97% during p-layer deposition which can be attributed to the increased crystallinity at higher H-dil and to subsequent band edge discontinuity between μc-Si:H p- and amorphous i-layer. The short circuit current density J_sc and the fill factor FF show an optimum at an intermediate H-dil and decrease for the highest H-dil. To improve the conversion efficiency and the reproducibility of the solar cells, an amorphous-like seed layer was incorporated between TCO and the bulk p-layer. The results obtained until now for amorphous solar cells with and without the seed layer are presented. The I–V parameters for the best p–i–n solar cell obtained so far are J_sc=13.95 mA/cm², V_oc=834 mV, FF=65% and η=7.6%, where the p-layers were prepared with 2% TMB. High open circuit voltages up to 847 mV could be achieved at higher TMB concentrations.     

Influence of aminothiazole additives in I/I3 redox electrolyte solution on Ru(II)-dye-sensitized nanocrystalline TiO2 solar cell performance

The influence of aminothiazole additives in acetonitrile solution of an I⁻/I₃⁻ redox electrolyte on the performance of a bis(tetrabutylammonium)cis-bis(thiocyanato)bis(2,2′- bipyridine-4-carboxylic acid, 4′-carboxylate)ruthenium(II) (N719) dye-sensitized TiO₂ solar cell was studied. The current–voltage characteristics were investigated under AM 1.5 (100 mW/cm²) for nine different aminothiazole compounds. The aminothiazole additives tested had varying influences on the solar cell performance. Most of the additives enhanced the open-circuit photovoltage (V_oc), but reduced the short circuit photocurrent density (J_sc) of the solar cell. Both the physical and chemical properties of the aminothiazoles were computationally calculated in order to determine the reasons that the additive influenced solar cell performance. The larger the calculated partial charge of the nitrogen atom in the thiazole, the higher the V_oc value. The V_oc value increased as the dipole moment of aminothiazoles in acetonitrile increased. Moreover, the V_oc of the solar cell also increased as the size of the aminothiazole molecules decreased. These results suggest that the electron donicity of the aminothiazole additives influenced the interaction with the TiO₂ photoelectrode, which altered the dye-sensitized solar cell performance.     

Improved Jsc in CIGS thin film solar cells using a transparent conducting ZnO:B window layer

A comparative study of the cell performance of CIGS thin-film solar cells fabricated using ZnO:Al and ZnO:B window layers has been carried out. ZnO:B films were deposited by RF magnetron sputtering using an undoped ZnO target in a B₂H₆–Ar gas mixture. The short-circuit current (J_sc) was found to improve upon the replacement of the ZnO:Al layer with ZnO:B layers. This improvement in J_sc is attributed to an increase in quantum efficiency due to the higher optical transmission of the ZnO:B layer in the near-infrared region. The best cell fabricated with a MgF₂/ZnO:B/i-ZnO/CdS/CIGS/Mo structure yielded an active area efficiency of 18.0% with V_oc=0.645 V, J_sc=36.8 mA/cm², FF=0.76, and an active area of 0.2 cm² under AM 1.5 illumination.     

Power output of Al/SnO2/n-Si solar cell

An Al/SnO₂/n-Si solar cell from n-type silicon (6.5 Ω-cm, 100) wafers using chemical vapour deposition (CVD) has been fabricated. The fabrication details, I–V characteristics determining conversion-efficiency (η_max), open circuit voltage (V_oc) and short circuit current (I_sc) have been presented. A maximum conversion efficiency of 6.3% for an unencapsulated cell of area 85.20 mm² has been obtained.