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采用金属有机物化学气相沉积(MOCVD)方法,以NH3作为N元素的掺杂源,在蓝宝石衬底上生长了掺N的ZnO薄膜.利用X射线衍射、X射线光电子能谱、原子力显微镜、霍尔测量及先致荧光光谱等测试技术分析了薄膜的结晶性质、表面形貌、光电性质及掺杂元素N的价键特性.结果表明,NH3 的掺杂会影响ZnO薄膜的结晶特性,薄膜虽然仍是(002) 面择优取向生长,但同时也出现了ZnO的(100)及(101)面生长.在薄膜生长时N元素掺入到ZnO薄膜当中,并形成N-Zn、N-H、N-C键.C、H杂质的存在,使掺N ZnO薄膜表现为高阻,同时也影响了薄膜的光致发光特性. 相似文献
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利用脉冲激光沉积方法在Al/Si衬底上生长出了高质量的n型ZnO单晶薄膜。研究并总结了以金属Al材料制备ZnO薄膜器件欧姆电极的方法。选择功函数合适的金属作为电极材料,比如In、Ti和Al等,可以在n型ZnO薄膜上制作良好的欧姆电极。研究发现,在金属Al和n型ZnO膜之间生长一层高掺杂的AZO层,可得到比Al与n型ZnO直接接触更优良的欧姆性能。并且,通过高温退火可以有效提高金属Al电极的结晶质量和电导率,降低电极与n型ZnO界面处的接触势垒,从而实现优良的欧姆接触性能。 相似文献
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采用溶胶-凝胶法在玻璃衬底上制备了不同Cu掺杂量的ZnO薄膜。用X线衍射仪、原子力显微镜研究Cu掺杂对ZnO(ZnO∶Cu)薄膜的微观结构、表面形貌的影响。结果表明,Cu掺杂并未改变ZnO的纤锌矿结构,但所有样品的衍射峰向大角度偏移,且薄膜的粒径增大,说明薄膜的内在应力使晶格发生了畸变。在ZnO薄膜的透射光谱中,透射率在可见光范围随掺杂量的增加而降低,且吸收边发生红移,可见Cu掺杂减小了带隙宽度。从室温下的光致发光谱来看,Cu掺杂仅改变带边发光峰的位置,未显著改变ZnO薄膜的其他发光峰的位置,但因发光淬灭的原因,发光峰的强度明显降低。 相似文献
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氧化锌薄膜的电化学沉积法制备及受激发射研究 总被引:4,自引:3,他引:4
采用一种简单的电化学沉积法,在三电极化学池中,以单一的硝酸锌水溶液作为电沉积液,制备了高光学质量的半导体ZnO薄膜。透射光谱测量表明其光学带隙为3.35eV,400~2000nm波段的光学透过率大于80%。X射线衍射(XRD)和原子力显微镜(AFM)研究表明,ZnO薄膜为纤锌矿结构的无序多晶颗粒膜,微晶尺寸小于250nm。当用355nm的皮秒脉冲激光作为抽运源垂直入射薄膜表面时,可以检测到400nm附近的近紫外受激发射光,其强度随入射强度呈超线性增长关系,阈值在196.8kW/cm^2处,并且激光发射是多模的和各个方向的,还与被激发的面积有关,表现为随机激光发射机制。 相似文献
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综述了近年来纳米氧化锌材料p型掺杂改性的研究现状,介绍了用于p型掺杂的单元素和共掺杂双元素以及所采用的主要掺杂方法,这些方法包括热蒸发法、喷雾热解法、溶胶-凝胶法、低温水解法、离子束增强沉积法、脉冲激光沉积法和磁控溅射法等。探讨了掺杂后的氧化锌在光电磁以及p型稳定性等方面表现出的新特性,介绍了p型氧化锌薄膜在紫外探测器和太阳电池方面的应用,对p型氧化锌薄膜未来的发展进行了分析和预测,认为制备稳定、低电阻率和高载流子浓度的p型氧化锌薄膜是今后研究的重点。 相似文献
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激光辐照对LCMO薄膜结构和电输运特性的影响 总被引:1,自引:1,他引:0
利用脉冲激光溅射沉积技术,在SrTiO3(001)单晶衬底上外延生长了La0.67 Ca0.33 MnO3(LCMO)薄膜.采用CO2激光对制备的薄膜辐照10~60 s.利用X射线衍射(XRD)、原子力显微镜(AFM)和电阻-温度测试系统对激光辐照前后的薄膜进行了对比分析.结果显示,CO2激光辐照增强了LCMO薄膜的结晶性,使薄膜呈现出类似"平原"的表面结构并降低了表面粗糙度.与传统的高温退火类似,经CO2激光辐照后,样品的电阻率从1.3 mΩ·cm下降到0.5 mΩ·cm,绝缘态-金属转变温度(Tp)和温度电阻系数(TCR)分别从255 K和7.9%·K-1提高到263 K和18.7%·K-1.研究结果表明,CO2激光辐照能够在极短的时间内改善LCMO薄膜的O含量和晶粒间的连通性,从而优化和提高了薄膜的电输运特性. 相似文献
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Copper (Cu)-doped ZnO thin films were grown on unheated glass substrates at various doping concentrations of Cu (0, 5.1, 6.2 and 7.5 at%) by simultaneous RF and DC magnetron sputtering technique. The influence of Cu atomic concentration on structural, electrical and optical properties of ZnO films was discussed in detail. Elemental composition from EDAX analysis confirmed the presence of Cu as a doping material in ZnO host lattice. XRD patterns show that the films were polycrystalline in nature with (002) as a predominant reflection of ZnO exhibited hexagonal wurtzite structure toward c-axis. From AFM analysis, films displayed needle-like shaped grains throughout the substrate surface. The electrical resistivity was found to be increased with increase of Cu content from 0 to 7.5 at%. Films have shown an average optical transmittance about 80% in the visible region and decreased optical band gap values from 3.2 to 3.01 eV with increasing of Cu doping content from 0 to 7.5 at% respectively. Furthermore, remarkably enhanced photoluminescence (PL) properties have been observed with prominent violet emission band corresponding to 3.06 eV (405 nm) in the visible region through the increase of Cu doping content in ZnO host lattice. 相似文献
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An experiment to determine the electronic and chemical states of Cu in a ZnO crystal was performed using Hall measurement, X-ray photoelectron spectroscopy (XPS) and low-temperature photoluminescence (PL). Cu atoms showed different behaviors in the ZnO matrix as a function of oxygen gas pressure. Metallic copper (Cu0)-related Cu 2p3/2 peak was observed in highly n-type ZnO:Cu film deposited in 10 mTorr. In the Cu-doped p-type ZnO film prepared in 50 mTorr, CuZn1+-related peak and small CuZn2+-related satellite peak exhibited and the optical acceptor binding energies of Cu3d9 and Cu3d10 were 173 and 213 meV, respectively. 相似文献
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为了制备结晶质量好的Cu掺杂ZnO薄膜,研究其结构和光学性质,采用脉冲激光沉积方法,在Si衬底上选择不同的衬底温度来制备薄膜。实验成功制得了结晶质量较好的Cu掺杂ZnO薄膜。利用X射线衍射仪、扫描电子显微镜和荧光分光光度计对样品进行了测量和分析。所制备的样品均表现出高度的c轴择优取向,衬底温度为300℃时,薄膜表面形貌均匀致密;在样品的光致发光谱中,发现样品除了在380nm附近出现紫外发光峰外,在460nm附近出现了蓝光发光峰,真正意义上实现了ZnO薄膜的蓝光发射。结果表明,衬底温度对其晶体质量有较大影响。 相似文献
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Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications 下载免费PDF全文
Unipolar resistive switching behaviors of the ZnO and Al2O3/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. X-ray diffraction results indicated that ZnO film has a dominant peak at (002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of Al2O3/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1 V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmics behaviors. The endurance of the bilayer (BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications. 相似文献
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在不同氧分压下用脉冲激光沉积法(PLD)在n型硅(111)衬底上生长ZnO薄膜,对薄膜进行了X射线衍射(XRD)和X射线光电子能谱(XPS)分析,研究了氧分压对所制薄膜结晶质量的影响.结果表明,当氧分压为0.13 Pa时,Zn 2p和O1s态电子的结合能较大.随着氧分压的增加,Zn 2p和O1s态电子的结合能变小,说明更多的Zn原子和O原子产生了结合.氧分压为6.50 Pa时,所制ZnO薄膜的XRD衍射峰半高宽最小,其Zn、O粒子数比最接近化学计量比,说明在此氧分压下生长的ZnO薄膜结晶质量最好. 相似文献
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The atomic and electronic structures for various metal (111)/ZnO{111} interfaces were studied by first-principles calculations
based on density functional theory. The Schottky barrier heights (SBHs) were evaluated for Al, Ag, and Au/ZnO interfaces.
SBHs at metal/ZnO polar interfaces were found to be very sensitive to the specific interface chemical bonding. Interface metal-zinc
bonding tends to give Ohmic contacts, while the contribution of metal-oxygen bonds depends on the specific metal: simple metals
gives Ohmic contacts whereas noble metals gives Schottky-like behavior. We discussed the implications of these results for
controlling the formation of metal/ZnO contacts. 相似文献
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XIONGGang UCERKB WILLIAMSRT TANGPing LINBi-xia FUZhu-xi 《电子显微学报》2005,24(3):178-184
我们分别通过直流反应溅射及脉冲激光淀积法制备了ZnO多晶薄膜。X射线衍射结果显示出薄膜的c轴取向。原子力显微镜证实薄膜的多晶结构。两种方法制备的ZnO在光子激发下都发射较强的带边荧光。绿色荧光未被观察到。激光淀积在(001)硅表面的ZnO的发光源自“自由激子”辐射。激光淀积在(0001)氧化铝晶体表面的ZnO的发光机制则在相当宽的激发强度范围内都呈现出电子.空穴等离子体(electron-hole plasma)的复合特性。 相似文献