SnAgCu无铅焊点原位电迁移IMC演变

在28℃.3.25A直流电下,对Cu/Sn3.0Ag0.5Cu/Cu对接无铅焊点进行原位电迁移实验,观察了通电120,168,384和504 h后焊点横截面的微观组织形貌.结果表明,电迁移初期,Cu<,6>Sn<,5>化合物遍布整个焊点截面,随时间延长,不断从阴极向阳极迁移聚集;当通电504 h后,焊点内已看不到金属间...     

电迁移对Sn3.0Ag0.5Cu无铅焊点剪切强度的影响

通过热风回流焊制备了Cu/Sn3.0Ag0.5Cu/Cu对接互连焊点,测试了未通电及6.5 A直流电下通电36 h和48 h后焊点的剪切强度.结果表明,电迁移显著地降低了焊点的剪切强度,电迁移36 h使剪切抗力降低约30%,电迁移48 h降低约50%.SEM观察断口和界面形貌表明,界面金属间化合物增厚使断裂由韧性向脆性...     

SnAgCu无铅焊点的电迁移行为研究

电迁移引发的焊点失效已经成为当今高集成度电子封装中的最严重的可靠性问题之一。应用SnAgCu无铅焊膏焊接微米级铜线,进行电迁移实验。结果表明:焊点形貌从原来的光滑平整变得凹凸不平,阴极处出现了裂纹和孔洞,并且在铜基板和Cu6Sn5金属间化合物(IMC)之间出现薄薄的一层Cu3Sn金属间化合物,由ImageJ软件测量其平均厚度约为2.11μm;而在阳极附近没有明显的Cu3Sn金属间化合物形成。     

典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

典型Sn基焊料凸点互连结构电迁移异同性

研究了Sn37Pb,Sn3.0Ag0.5Cu和Sn0.7Cu三种焊料BGA焊点在电迁移作用下界面的微观组织结构.在60℃,1×103 A/cm2电流密度条件下通电187h后,Sn37 Pb焊点阴极界面已经出现了空洞,同时在阳极有Pb的富集带;Sn3.0Ag0.5Cu焊点的阴极界面Cu基体大量溶解,阳极金属间化合物层明显比阴极厚;对于Sn0.7Cu焊料,仅发现阳极金属间化合物层厚度比阴极厚,阴极Cu基体的溶解不如SnAgCu明显,电迁移破坏明显滞后.     

热循环条件下Sn基钎料接头电迁移行为研究

通过电迁移和热疲劳循环实验,研究了热循环和高电流密度耦合作用下Sn58Bi和Sn3.0Ag0.5Cu钎料焊接接头的失效形式。实验结果表明,在通电和高低温冲击的耦合作用下,两种钎料接头的失效都发生在升温阶段。热循环导致接头内部裂纹的萌生和扩展,导致局部电流密度持续增大,加速了电迁移的发生,最终导致焊点失效。在热电耦合作用下,Sn58Bi钎料接头的使用寿命要长于Sn3.0Ag0.5Cu钎料接头的使用寿命。     

SnAgCu凸点互连的电迁移

研究了无铅Sn96Ag3 sCuo s凸点与镀Ni焊盘互连界面的电迁移现象.在180℃条件下,凸点及互连界面在电迁移过程中出现了金属间化合物沿电子流运动方向的迁移,其演化过程呈现出显著的极性效应:阴极互连界面发生了金属间化合物的熟化、剥落和迁移;阳极互连界面则出现了金属间化合物的大量聚集.金属间化合物的演化和迁移造成了阴极处的物质减少,从而诱发空洞的形成和聚集,导致互连面积减小,整体电阻增大,可靠性降低.     

回流次数对Sn3.8Ag0.7Cu-xNi/Ni焊点的影响

研究了复合无铅焊料Sn3.8Ag0.7Cu-xNi(x=0.5,1.0,2.0)与Au/Ni/Cu焊盘在不同回流次数下形成的焊点的性能.结果表明,Ni颗粒增强的复合焊料具有良好的润湿性能,熔点小于222℃;X为0.5的焊料界面IMC由针状(CuNi)6Sn5演化为双层IMC,即多面体状化合物(CuNi)6Sn5和回飞棒...     

基于细观损伤模型的SnAgCu材料特性研究

基于细观损伤力学本构模型思想,考虑微孔洞演化效应,对微电子封装中的Sn3.0Ag0.5Cu材料特性和焊点服役时的损伤失效机理进行研究。基于实验数据研究并结合拟合方法确定了Gurson-Tvergaard-Needleman(GTN)本构模型参数,并通过恒应变载荷条件下的应力应变响应的数据与试验数据进行比较,验证了模型的有效性。     

La对SnAgCu/Cu及Ni界面金属间化合物的影响

利用扫描电镜、能谱分析仪对Sn0.3Ag0.7Cu-xLa/Cu(x=0～0.25)和Ni界面金属间化合物(IMC)形成及长大规律进行了研究.结果表明:微量La的添加使钎焊与时效后焊点/Cu界面生成的Cu<,6>Sn<,5>晶粒明显细化,当X超过0.10时,Cu<,6>Sn<,5>晶粒的上方出现大量的粒状Ag<,3>S...     

Characterizing metallurgical reaction of Sn3.0Ag0.5Cu composite solder by mechanical alloying with electroless Ni-P/Cu under-bump metallization after various reflow cycles

Electroless Ni-P/Cu under-bump metallization (UBM) is widely used in electronics packaging. The Sn3.0Ag0.5Cu lead-free composite solder pastes were produced by a mechanical alloying (MA) process doped with Cu₆Sn₅ nanoparticles. In this study, the detailed interfacial reaction of Sn3.0Ag0.5Cu composite solders with EN(P)/Cu UBM was investigated after reflow. A field-emission scanning electron microscope (FESEM) was employed to analyze the interfacial morphology and microstructure evolution. The intermetallic compounds (IMCs) formed at the interface between the Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after one and three reflows were mainly (Ni_1−x,Cu_x)₃Sn₄ and (Cu_1−y,Ni_y)₆Sn₅. However, only (Ni_1−x,Cu_x)₃Sn₄ IMC was observed after five reflows. The elemental distribution near the interfacial region was evaluated by an electron probe microanalyzer (EPMA) as well as field-emission electron probe microanalyzer (FE-EPMA). Based on the observation and characterization by FESEM, a EPMA, and an FE-EPMA, the reaction mechanism of interfacial phase transformation between Sn3.0Ag0.5Cu composite solders and EN(P)/Cu UBM after various reflow cycles was discussed and proposed.     

Intermetallic formation in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with immersion Ag surface finish

The intermetallic compounds formed in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Ag/Cu pads are investigated. After reflow, scallop-shaped η-Cu₆Sn₅ and continuous planar η-(cu_0.9Ni_0.1)₆Sn₅ intermetallics appear at the interfaces of the Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder joints, respectively. In the case of the Sn3Ag0.5Cu specimens, an additional ε-Cu₃Sn intermetallic layer is formed at the interface between the η-Cu₆Sn₅ and Cu pads after aging at 150°C, while the same type of intermetallic formation is inhibited in the Sn3Ag0.5Cu0.06Ni0.01Ge packages. In addition, the coarsening of Ag₃Sn precipitates also abates in the solder matrix of the Sn3Ag0.5Cu0.06Ni0.01Ge packages, which results in a slightly higher ball shear strength for the specimens.     

Sb掺杂对SnAgCu无铅焊点电迁移可靠性的影响

向Sn3.8Ag0.7Cu无铅焊膏中添加质量分数为1%的Sb金属粉末,研究了其焊点在电流密度为0.34×104A/cm2、环境温度150℃下的电迁移行为。通电245h后,阴极处钎料基体与Cu6Sn5IMC之间出现一条平均宽度为16.9μm的裂纹,阳极界面出现凸起带,钎料基体内部也产生了裂纹。结果表明:1%Sb的添加使焊点形成了SnSb脆性相,在高电流密度和高温环境下产生裂纹,缩短了焊点寿命,降低了电迁移可靠性。     

Intermetallic reactions in Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes

The intermetallic compounds (IMCs) formed during the reflow and aging of Sn3Ag0.5Cu and Sn3Ag0.5Cu0.06Ni0.01Ge solder BGA packages with Au/Ni surface finishes were investigated. After reflow, the thickness of (Cu, Ni, Au)₆Sn₅ interfacial IMCs in Sn3Ag0.5Cu0.06Ni0.01Ge was similar to that in the Sn3Ag0.5Cu specimen. The interiors of the solder balls in both packages contained Ag₃Sn precipitates and brick-shaped AuSn₄ IMCs. After aging at 150°C, the growth thickness of the interfacial (Ni, Cu, Au)₃Sn₄ intermetallic layers and the consumption of the Ni surface-finished layer on Cu the pads in Sn3Ag0.5Cu0.06Ni0.01Ge solder joints were both slightly less than those in Sn3Ag0.5Cu. In addition, a coarsening phenomenon for AuSn₄ IMCs could be observed in the solder matrix of Sn3Ag0.5Cu, yet this phenomenon did not occur in the case of Sn3Ag0.5Cu0.06Ni0.01Ge. Ball shear tests revealed that the reflowed Sn3Ag0.5Cu0.06Ni0.01Ge packages possessed bonding strengths similar to those of the Sn3Ag0.5Cu. However, aging treatment caused the ball shear strength in the Sn3Ag0.5Cu packages to degrade more than that in the Sn3Ag0.5Cu0.06Ni0.01Ge packages.     

Evaluation of solder joint reliability in flip-chip packages during accelerated testing

The microstructural investigation and thermomechanical reliability evaluation of the Sn-3.0Ag-0.5Cu solder bumped flip-chip package were carried out during the thermal shock test of the package. In the initial reaction, the reaction product between the solder and Cu mini bump of chip side was Cu₆Sn₅ intermetallic compound (IMC) layer, while the two phases which were (Cu,Ni)₆Sn₅ and (Ni,Cu)₃Sn₄ were formed between the solder and electroless Ni-P layer of the package side. The cracks occurred at the corner solder joints after the thermal shocks of 400 cycles. The primary failure mechanism of the solder joints in this type of package was confirmed to be thermally-activated solder fatigue failure. The premature brittle interfacial failure sometimes occurred in the package side, but nearly all of the failed packages showed the occurrence of the typical fatigue cracks. The finite-element analyses were conducted to interpret the failure mechanisms of the packages, and revealed that the cracks were induced by the accumulation of the plastic work and viscoplastic shear strains.