Germanium-diffused waveguides in silicon for λ=1.3 μm andλ=1.55 μm with losses below 0.5 dB/cm

The authors present a simple technique for the fabrication of integrated optical channel waveguides that are prepared by indiffusion of an E-beam evaporated amorphous alloy of germanium and silicon into commercially available silicon with low dopant concentration, using only simple technological processes such as standard lithography, PVD, and diffusion. The waveguides are polarization independent and have waveguide losses as low as 0.3 dB/cm at wavelengths of λ=1.3 μm and λ=1.55 μm. The spot sizes are well suited for low-loss single-mode fiber device coupling, being on the order of a few microns in both horizontal and vertical directions     

Compact mode expanders using resonant coupling between a taperedactive region and an underlying coupling waveguide

A novel technique for enhanced laser-fiber coupling, based on resonant power coupling between a tapered active waveguide and an underlying coupling waveguide, is presented. Spot-sizes are transformed from 2.0×1.1 μm in the active region to 6.0×3.1 μm in the coupling waveguide, over a length of 200 μm, with a mode transformation loss of only 0.36 dB. Butt-coupling efficiencies of 55% (2.6 dB loss) are estimated to standard cleaved single-mode fibers at 1.55 μm. The proposed device requires a single epitaxial growth and conventional processing techniques, making it amenable for low-cost manufacturing     

Design and fabrication of monolithic optical spot size transformers(MOSTs) for highly efficient fiber-chip coupling

A novel type of monolithic optical spot size transformer realized in the InP/InGaAsP material system combines many desirable features like high fiber-chip coupling efficiency, large spot size transformation, high tolerances for fiber alignment, simple fabrication, and straightforward integrability with other devices. The spot size transformation is accomplished by two waveguide sections tapered in the vertical and lateral directions, respectively. We discuss design issues, describe the fabrication process, give experimental results, and present the monolithic integration of the spot size transformers with a current controlled directional coupler switch     

1.55-μm InGaAsP-InP spot-size-converted (SSC) laser with simpletechnological process

In this letter, we report the realization of a 1.55-μm spot-size-converted (SSC) laser using conventional SCH-MQW active layers and conventional photolithography. The laser consists of a 300-μm-long rectangular gain section, with compensated multiple-quantum-well (MQW) structure, and a 300-μm-long tapered passive waveguide, fabricated on lower SCH layer. The device exhibits a beam divergence of 13°×18° and 3.5-dB coupling loss with a cleaved single-mode fiber (SMF). The 1-dB alignment tolerance is ±2.3 μm in the vertical direction and ±1.9 μm in the lateral direction, respectively     

Compact mode expanded lasers using resonant coupling between a1.55-μm InGaAsP tapered active region and an underlying couplingwaveguide

We demonstrate a novel expanded mode laser for enhanced laser-fiber coupling based on resonant coupling between a tapered active waveguide and an underlying coupling waveguide. This device was grown in a single standard epitaxial growth and was processed using conventional fabrication techniques, thus making it attractive for low-cost manufacturing. The total taper length required for mode transformation was 200 μm and the excess transformation loss was 0.6 dB indicating the compact, low-loss mode transformation. Far-field divergence angles (13°×24°) and improved coupling to cleaved single-mode fibers (3.8-dB coupling loss), were achieved     

Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers

The use of ultrathin etch-stop techniques to expand the vertical optical mode size adiabatically in 1.5-μm InGaAs/InGaAsP MQW lasers using a tapered-core passive intracavity waveguide structure is discussed. 30% differential quantum efficiency out the tapered facet, far-field FWHM of ~12° and a butt-coupling efficiency into a cleaved fiber of -4.2 dB, with -1-dB alignment tolerances of ~±3 μm, were achieved     

Dependence of Ti-diffused Er:LiNbO3 laser efficiency onwaveguide fabrication parameters and pump wavelength

The mode size, effective pump area, and coupling efficiency as function of initial Ti-stripe width W, diffusion temperature T, and initial Ti-stripe thickness H in c-cut Ti-diffused Er:LiNbO₃ waveguide laser have been studied theoretically, taking into account optical pumping λ_p=1.477 μm and 0.98 μm. The main features of the mode sizes in terms of these diffusion parameters were collected and, as compared with the experimental results, a qualitative agreement has been achieved. The effective pump areas exhibit both significant initial Ti-stripe width and diffusion temperature dependence, especially for W>9 μm and T>1050°C, whereas the initial Ti-stripe thickness can hardly give influence when pumping with λ_p=0.98 μm radiation. On the other hand, coupling efficiency is approximately unchanged with values 0.76-0.78 for λ_p=1.477 μm and 0.8-0.85 for λ _p=0.98 μm, indicating that there are no optimized values of these parameters to increase slope efficiency through coupling efficiency. Moreover, the 0.98 μm pumping reveal lower threshold and higher coupling efficiency than 1.477-μm pumping. Finally, the appropriate waveguide fabrication parameters were proposed for the fabrication of a more efficient laser     

Design of strip-loaded optical waveguides for low-loss coupling tooptical fibers

Mismatch between the fundamental mode of a waveguide and that of an attached optical fiber may cause a significant loss of power in a guided-wave structure. These losses can be minimized, however, by proper shaping of the waveguide mode through judicious choice of dimensions and refractive indexes. It is shown by computer modeling and qualitative arguments that coupling losses between standard optical fibers (5-10-μm modal diameter) and strip-loaded waveguides constructed of GaAs/AlGaAs may be reduced to less than 10% at each facet. A wavelength of 0.85 μm is used as a specific example, with modal shapes explored systematically for a series of different waveguide structures     

A fiber-based crosspoint switch using high-refractive indexinterlay materials

A switch principle is described which relies on the coupling between two polished fiber coupler blocks through a high-index interlay waveguide whose refractive index is higher than the effective mode index of the fibers. Switching is effected by the input radiation coupling through the interlay waveguide into the second fiber (cross-coupled state) or recoupling into the first fiber (straight-through state). The half-coupler blocks were constructed with a nominal radius of curvature of 25 cm and the top surfaces polished close to the edge of the fiber core. Accurate glass and polymer ribbon spacers were used to separate the two blocks by from 5-20 μm and align them in parallel. The interstice was filled with a film of transparent high-index oil to form a slab waveguide     

1.3-μm AlGaInAs-InP buried-heterostructure lasers with modeprofile converter

AlGaInAs buried-heterostructure (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG). The threshold current I_th was 14.6 mA with a 600-μm-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2° and 12.6°, respectively. The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 μm     

A 2×2 crosspoint switch fabricated on the passive activeresonant coupler (PARC) platform

We demonstrate the fabrication of a 2×2 crosspoint switch monolithically fabricated on the passive active resonant coupler (PARC) platform by utilizing vertical resonant coupling over a taper between an active and a passive waveguide. The coupling taper was 100 μm long with less than 0.15 dB coupling loss. By pushing the mode up and down as and when required, we are able to integrate passive waveguides and electroabsorption modulators on one chip. The static performance of the switch has been tested, and a modulation depth of 30 dB has been achieved at the wavelength of 1.57 μm for an applied bias of 2.5 V     

Highly efficient waveguide-detector coupling structures forintegrated opto-electronical circuits on silicon

The direct waveguide-detector coupling is a highly efficient way to transform optical power guided in an integrated optical waveguide into electrical signals. This paper presents the design, technical realization, measuring setups, and results for waveguide endfire coupling structures to vertical and horizontal diodes on a silicon substrate. The decisive components of the coupling structures such as the step in the substrate, the antireflective coating, the integrated optical striploaded waveguide and different types of PIN-diodes will be discussed. The applications for such structures are demonstrated on an integrated optical pressure sensor and a fast optical detector for wavelength up to 1.1 μm     

Asymmetric output characteristics in 1.3-μm spot-size convertedlaser diodes

A spot-size converted laser diode (SSC-LD) with a vertically tapered passive waveguide structure was fabricated by butt-joint-built-in (BJB) coupling and selective area metal organic chemical vapor deposition growth. A high coupling efficiency exceeding 50% and 1-dB alignment tolerance of ±2.5 μm were obtained at a distance of 20 μm between a flat-end single-mode fiber and the SSC-LD. Experimental results show that the asymmetric output property can be described by the radiation mode added to the guide mode and spatial hole-burning in the active region     

Two-dimensional mode size transformation by Δn-controlledpolymer waveguides

We report a new type of polymer waveguide for two-dimensional (2-D) mode size transformation in which Δn (refractive index difference between core and cladding) is properly controlled along the waveguide axis while the core cross section is kept uniform. The beam diameter in the Δn-controlled waveguide where the core diameter is 3.7 μm and Δn changes from 0.0027 to 0.0009 toward one end in the 5 mm-gradient Δn, region, is about twice as large as that in a normal waveguide where Δn is 0.0027. The optical loss accompanied by mode size transformation is calculated to be less than 2.5% based on beam propagation methods (BPM's)     

Wafer-fused optoelectronics for switching

Wafer fusion technique for realization of compact waveguide switches and three-dimensional (3-D) photonic integrated circuits is investigated theoretically and experimentally. Calculations based on beam propagation method show that very short vertical directional couplers with coupling lengths from 40 to 220 μm and high extinction ratios from 20 to 32 dB can be realized. These extinction ratios can be further improved using a slight asymmetry in waveguide structure. The optical loss at the fused interface is investigated. Comparison of the transmission loss in InGaAsP-based ridge-loaded waveguide structures with and without a fused layer near the core region, reveals an excess loss of 1.1 dB/cm at 1.55 μm wavelength. Fused straight vertical directional couplers have been fabricated and characterized. Waveguides separated by 0.6 μm gap layer exhibit a coupling length of 62 μm and a switching voltage of about 2.2 V. Implications for GaAs-based fused couplers for 850 nm applications will also be discussed     

High-power operation of aluminum-free (κ=0.98 μm) pumplaser for erbium-doped fiber amplifier

The authors discuss the fabrication and characteristics of high-power (P_CW=430 mW) InGaAs/InGaAsP/InGaP ridge waveguide lasers emitting at λ=0.98 μm, which is the optimum wavelength for pumping erbium-doped fiber amplifiers. In the past, high-power operation of Al-free pump lasers has been limited to 150 mW because of catastrophic optical damage of the mirror facet. This problem has been largely removed by increasing the spot size of the laser with the aid of an improved waveguide design. As a result, Al-free lasers can now achieve a maximum power comparable to the conventional GaAlAs-based pump lasers for λ=0.98 μm     

Design of a single-mode tapered waveguide for low-losschip-to-fiber coupling

The novel waveguide structures described in this paper have nonlinearly tapered shapes that result in low radiation losses despite their relatively short lengths. The core at the waveguide endface connected with the fiber has a very small cross section and an expanded mode field with a non-Gaussian shape. The taper structures are analyzed by using an improved step-transition method. This method is a based on the theory of enclosing a waveguide within electrical walls and that can therefore treat the radiation modes in a tapered waveguide as discrete mode spectra. Analyzing the relationships between the lengths and shapes of the tapers and the radiation loss due to the tapers show that appropriately tapered semiconductor waveguides operating at an optical wavelength of 1.55 μm and having a taper length of less than 0.7 mm can have a radiation loss of only 0.1 dB and a coupling loss with a conventional single-mode fiber of less than 0.5 dB     

Adiabatic coupling in tapered air-silica microstructured opticalfiber

We study adiabatic mode propagation in tapered air-silica microstructured optical fibers and demonstrate efficient coupling into a robust high-delta microstructured fiber. In the waist region of the taper, the core mode is tightly confined by the air holes and exhibits properties similar to a high-delta waveguide such as enhanced peak intensity and widely flattened anomalous dispersion. We exploit these properties to generate tunable self-frequency shifting Raman solitons over the communications window from 1.3 μm to 1.65 μm, with over 60% conversion efficiency These fiber devices are practical for several reasons: they can be fusion spliced to standard single-mode fibers with relatively low loss, they are mechanically strong, due to the supporting cladding, and because the mode is isolated from the surrounding air interface, they can potentially be recoated allowing for packaging     

A narrow beam 1.3-μm-super luminescent diode integrated with aspot-size converter and a new type rear absorbing region

The device structure and performance of 1.3-μm narrow beam superluminescent diodes (NB-SLD's), which consist of a spot-size converter and a new type rear absorbing region, are reported. A butt-jointed selectively grown spot-size converter (SSC) is employed to realize the narrow beam characteristics. The rear absorbing region is designed as a taper structure with a part of the region is inclined from the active-stripe axes. In order to investigate the effects of both SSC length and active-region length on device performance, two types of NB-SLDs, whose SSC and active-region lengths differ, are fabricated. An electrode to sweep out photoexcited carriers in the absorption region is formed on one device. By comparing the characteristics of these devices, we clarify that a 500-μm-active-region device is suitable for high-output power operation, and a 400-μm-active-region device is suitable for realizing short coherent length. The light-output power is 13.9 mW at 200-mA-injection current for the former device, and the full-width at half-maximum (FWHM) of the spectrum is 62.6 nm (calculated coherence length is 26.5 μm) for the latter device. Very small spectral modulation index (0.015 at 5 mW-output power) is attained by grounding the absorption-region electrode. For the SSC length, a 300-μm SSC device shows very narrow far-field patterns (FFPs) and very good fiber-coupling characteristics. The FWHM of horizontal and vertical FFPs are 8.9 and 10.6°, respectively. Because of this narrow beam divergence, the coupling efficiency of -1.9 dB to a flat-end 4-μm spot-size fiber is obtained without lenses. The alignment tolerance of this device to the fiber for both horizontal and vertical direction is more than 3 μm at a loss of when -1 dB from the optimum coupling     

Vertical cavity devices as wavelength selective waveguides

We show that novel wavelength-sensitive devices can be fabricated by coupling a semiconductor vertical cavity resonator to a low index waveguide. The optical mode in the resonator propagates at an angle, and the resonator resembles a high index waveguide. A taper in the thickness of the resonator allows different parts of the waveguide to operate at different wavelengths. These structures are analyzed using both thin film equations and waveguide normalism. Concentrating on a waveguide demultiplexer, simple design equations are derived, and a demonstration device is fabricated for TE mode at 0.75 μm operation. Using AlGaAs/AlAs multilayers and a polymer top waveguide, the spectrometer exhibited a dispersion of 29 nm/cm, a wavelength resolution of better than 1 nm, and an intrinsic device efficiency of about 90%. A similar structure containing a light-emitting quantum well operated as a multiwavelength light source by modifying the spontaneous emission into the polymer waveguide