Biosequence Similarity Search on the <Emphasis Type="BoldItalic">Mercury</Emphasis> System

Biosequence similarity search is an important application in modern molecular biology. Search algorithms aim to identify sets of sequences whose extensional similarity suggests a common evolutionary origin or function. The most widely used similarity search tool for biosequences is BLAST, a program designed to compare query sequences to a database. Here, we present the design of BLASTN, the version of BLAST that searches DNA sequences, on the Mercury system, an architecture that supports high-volume, high-throughput data movement off a data store and into reconfigurable hardware. An important component of application deployment on the Mercury system is the functional decomposition of the application onto both the reconfigurable hardware and the traditional processor. Both the Mercury BLASTN application design and its performance analysis are described.     

一种自适应子空间相似性搜索方法

近年来,在多媒体信息检索、相似性连接和时间序列匹配等数据库领域的相似搜索研究备受关注.绝大部分工作都是在欧式空间条件下,使用度量距离函数计算最近邻(如kNN、kNNJ)来解决搜索目标集合问题.但已有研究表明,此条件下的搜索结果准确性很容易受到高差异维度的影响,且对应的解决方案尚缺乏灵活性和顽健性.首先提出了单机环境下动态子空间(部分维度)下相似搜索问题及解决方案.随着数据规模的扩大,单机算法不能很好地扩展,随之又提出了Hadoop框架下的分布式算法.实验证实,在不影响准确率的情况下,分布式算法的性能要优于集中式算法.     

The effect of multi-intermediate bands on the behavior of an InAs1-xNx/GaAs1-ySby quantum dot solar cell

A mathematical model of quantum dot intermediate band solar cells (QDIBSCs) is investigated using two intermediate bands (IBs). These two IBs arise from the quantum dot (QD) semiconductor material within the bandgap energy. Some parameters such as the width of the QD (W_QD) and the barrier thickness or the inter-dot distances between the QDs (B_T) are studied to show their influence on the performance of the QDIBSC. The time-independent Schrödinger equation, which is solved using the Kronig-Penney model, is used to determine the position and bandwidth energies of the two IBs. In our proposed model, the cubic shape of the QDs from InAs_0.9N_0.1 and the barrier or host semiconductor material from GaAs_0.98Sb_0.02 are utilized. It is shown from the results obtained that changing the parameters W_QD and B_T has more influence on the bandwidth energy for the first IB, Δ₁, than in the case of the second IB, Δ₂. The optimum power conversion efficiencies (PCEs) of the QDIBSCs with two IBs for the model under study are 58.01% and 73.55% at 1 Sun and maximum solar concentration, respectively. One can observe that, in the case of the two IBs, an improvement of the PCE is achieved.     

物联网中基于相似性计算的传感器搜索

物联网逐渐成为学术界研究的热点领域,无处不在的传感器设备促进了传感器搜索服务的产生。物联网中搜索的强时空性、海量数据的异构性与传感器节点的资源受限性,给物联网搜索引擎高效地查询传感器提出了挑战。该文提出基于传感器定量数值的线性分段拟合相似性(PLSS)搜索算法。PLSS算法通过分段和线性拟合的方法,构建传感器定量数值的相似性计算模型,从而计算传感器的相似度,根据相似度查找最相似的传感器集群。与模糊集(FUZZY)算法和最小二乘法相比,PLSS算法平均查询精度和查询效率较高。与原数据相比,PLSS算法的存储开销至少降低了两个数量级。     

一种应用于DVB调谐器中的2-2.4-GHz分数频率综合器设计

摘要—本文设计了一个应用在DVB 调谐器中的分数频率综合器。详细比较了全差分频率综合器和单端调谐频率综合器的传输函数。在此基础上设计了频率综合器的环路参数。除此之外详细描述了全差分电荷泵的实现方式,并提出了改进的开关以提高电荷泵的线性度。设计了同步8/9 预分频器并讨论了设计细节。频率综合器环路带100 kHz,参考杂散小于-63 dBc。在1 MHz 频偏处相位噪声小于-110 dBc/Hz。100 Hz-100 MHz均方根积分噪声在整数分频模式小于0.7度。在分数分频模式小于1度。本文所涉及到的频率综合器在SMIC 0.18-μm CMOS 工艺下流片实现,电源电压为1.8-V,电流消耗为10 mA,面积为1-mm2。     

基于曲率距离的时间序列相似性搜索方法

针对几种时间序列相似性度量方法存在的序列元素值依赖性,对序列信息挖掘不充分等问题,该文提出一种新的时间序列分段、近似表示和相似性度量方法。在对序列信息和规律充分挖掘的基础上,对时间序列进行分段并建立了各分段的精确拟合模型,用分段的拟合曲线在各时刻处曲率组成的曲率序列对原时间序列进行近似表示,给出了时间序列的曲率距离定义。最后,提出了基于曲率距离的时间序列相似性搜索算法。该方法充分挖掘了序列信息,对时间序列的主要形态特征进行了有效保留和识别,经实验验证了该方法的有效性、稳定性和准确性。     

The effect of multi-intermediate bands on the behavior of an InAs1-xNx/GaAs1-ySby quantum dot solar cell

A mathematical model of quantum dot intermediate band solar cells (QDIBSCs) is investigated using two intermediate bands (IBs). These two IBs arise from the quantum dot (QD) semiconductor material within the bandgap energy. Some parameters such as the width of the QD (W_QD) and the barrier thickness or the inter-dot distances between the QDs (B_T) are studied to show their influence on the performance of the QDIBSC. The time-independent Schrödinger equation, which is solved using the Kronig-Penney model, is used to determine the position and bandwidth energies of the two IBs. In our proposed model, the cubic shape of the QDs from InAs_0.9N_0.1 and the barrier or host semiconductor material from GaAs_0.98Sb_0.02 are utilized. It is shown from the results obtained that changing the parameters W_QD and B_T has more influence on the bandwidth energy for the first IB, Δ₁, than in the case of the second IB, Δ₂. The optimum power conversion efficiencies (PCEs) of the QDIBSCs with two IBs for the model under study are 58.01% and 73.55% at 1 Sun and maximum solar concentration, respectively. One can observe that, in the case of the two IBs, an improvement of the PCE is achieved.     

Binding energies of shallow impurities in asymmetric strained wurtzite AlxGa1-xN/GaN/AlyGa1-yN quantum wells

The ground state binding energies of hydrogenic impurities in strained wurtzite Al_xGa_1-xN/GaN/Al_yGa_1-yN quantum wells are calculated numerically by a variational method. The dependence of the binding energy on well width, impurity location and Al concentrations of the left and right barriers is discussed, including the effect of the built-in electric field induced by spontaneous and piezoelectric polarizations. The results show that the change in binding energy with well width is more sensitive to the impurity position and barrier heights than the barrier widths, especially in asymmetric well structures where the barrier widths and/or barrier heights differ. The binding energy as a function of the impurity position in symmetric and asymmetric structures behaves like a map of the spatial distribution of the ground state wave function of the electron. It is also found that the influence on the binding energy from the Al concentration of the left barrier is more obvious than that of the right barrier.     

Hybrid functional calculations on the band gap bowing parameters of InxGa1-xN

The electronic band structures and band gap bowing parameters of In_xGa_1-xN are studied by the firstprinciples method based on the density functional theory. Calculations by employing both the Heyd-ScuseriaErnzerh of hybrid functional（HSE06） and the Perdew-Burke-Ernzerhof（PBE） one are performed. We found that the theoretical band gap bowing parameter is dependent significantly on the calculation method, especially on the exchange-correlation functional employed in the DFT calculations. The band gap of In_xGa_1-xN alloy decreases considerably when the In constituent x increases. It is the interactions of s–s and p–p orbitals between anions and cations that play significant roles in formatting the band gaps bowing. In general, the HSE06 hybrid functional could provide a good alternative to the PBE functional in calculating the band gap bowing parameters.     

用633nm的激光器监控峰值波长为 530nm的AlGaN/GaN DBR的生长

本文从理论和实验上研究了用633nm激光器干涉仪监控峰值反射波长为530nm的1/4光学厚度的AlGaN/GaN 分布布拉格反射器（DBR）的生长。首先采用传输矩阵法从理论上研究了不同周期厚度的AlGaN/GaN DBR的实时反射率随DBR生长厚度的变化。接着采用金属有机化合物气相外延法生长了两个与模拟结构相同的DBR样品。仿真结果和实验结果表明能够从DBR实时反射率随生长厚度变化的曲线形状判断DBR的结构参数。最后通过激光干涉仪实时监控生长了DBR发光二极管,光致发光实验证明DBR对发光二极管出射光的加强作用在期望波长范围内。     

非对称应变纤锌矿AlxGa1-xN/GaN/AlyGa1-yN量子阱中浅杂质态的结合能

本文采用变分法数值计算应变纤锌矿AlxGa1−xN/GaN/AlyGa1−yN量子阱中类氢杂质的基态结合能. 计及由自发极化和压电极化引起的内建电场, 讨论阱宽、杂质位置以及左右垒中Al组分对结合能的影响. 结果表明, 尤其在非对称量子阱即势垒宽度或（和）高度不一样的情形下, 杂质位置和垒高对结合能随阱宽变化关系的影响比垒宽更为明显. 对称或非对称结构中, 结合能随杂质位置的变化形如电子基态波函数的空间分布. 此外, 左垒中Al组分对结合能的影响较右垒更甚.     

Characterization of AlxInyGa1−x−yN quaternary alloys grown on sapphire substrates by molecular-beam epitaxy

High-resolution X-ray diffraction (HR-XRD) with rocking curve, atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy have been performed on high-quality quaternary Al_xIn_yGa_1−x−yN thin films at room temperature. The Al_xIn_yGa_1−x−yN films were grown on c-plane (0 0 0 1) sapphire substrates with AlN as buffer layers using a molecular beam epitaxy (MBE) technique with aluminum (Al) mole fractions x ranging from 0.0 to 0.2 and constant indium (In) mole fraction y=0.1. HR-XRD measurements confirmed the high crystalline quality of these alloys without any phase separation. The X-ray rocking curve of Al_xIn_yGa_1−x−yN films typically shows full widths at half maximum (FWHM) intensity between 14.4 and 28.8 arcmin. AFM measurements revealed a two-dimensional (2D) growth mode with a smooth surface morphology of quaternary epilayers. PL spectra exhibited both an enhancement of the integrated intensity and an increasing blueshift with increased Al content with reference to the ternary sample In_0.1Ga_0.90N. Both effects arise from Al-enhanced exciton localization. PL was used to determine the behavior of the energy band gap of the quaternary films, which was found to increase with increasing Al composition from 0.05 to 0.2. This trend is expected since the incorporation of Al increases the energy band gap of ternary In_0.1Ga_0.90N (3.004 eV). We have also investigated the bowing parameter for the variation of energy band gaps and found it to be very sensitive on the Al composition. A value of b=10.4 has been obtained for our quaternary Al_xIn_yGa_1−x−yN alloys.     

Effect of deposition conditions on the physical properties of SnxSy thin films prepared by the spray pyrolysis technique

Tin sulfide thin films (Sn_xS_y) with an atomic ratio of y/x = 0.5 have been deposited on a glass substrate by spray pyrolysis. The effects of deposition parameters, such as spray solution rate (R), substrate temperature (T_s) and film thickness (t), on the structural, optical, thermo-electrical and photoconductivity related properties of the films have been studied. The precursor solution was prepared by dissolving tin chloride (SnCl₄, 5H₂O) and thiourea in propanol, and Sn_xS_y thin film was prepared with a mole ratio of y/x = 0.5. The prepared films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV-vis spectroscopy. It is indicated that the XRD patterns of Sn_xS_x films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm. The optical gap of Sn_xS_x thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of (αhν)² versus hν related to the change of deposition conditions. The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters.     

Large signal and noise properties of heterojunction AlxGa1-xAs/GaAs DDRIMPATTs

Simulation studies are carried out on the large signal and noise properties of heterojunction (HT) Al_xGa_1-xAs/GaAs double drift region (DDR) IMPATT devices at V-band (60 GHz). The dependence of Al mole fraction on the aforementioned properties of the device has been investigated. A full simulation software package has been indigenously developed for this purpose. The large signal simulation is based on a non-sinusoidal voltage excitation model. Three mole fractions of Al and two complementary HT DDR structures for each mole fraction i.e., six DDR structures are considered in this study. The purpose is to discover the most suitable structure and corresponding mole fraction at which high power, high efficiency and low noise are obtained from the device. The noise spectral density and noise measure of all six HT DDR structures are obtained from a noise model and simulation method. Similar studies are carried out on homojunction (HM) DDR GaAs IMPATTs at 60 GHz to compare their RF properties with those of HT DDR devices. The results show that the HT DDR device based on N-Al_xGa_1-xAs/p-GaAs with 30% mole fraction of Al is the best one so far as large signal power output, DC to RF conversion efficiency and noise level are concerned.     

溅射压力对制备a-GaAs1-xNx 薄膜光学常数的影响

采用反应磁控溅射法在室温条件下制备了a-GaAs_1-xN_x 薄膜。实验测定了薄膜厚度、氮含量、载流子浓度和光学透过率及并研究了其随溅射压的变化。系统研究了溅射压对所制备薄膜的光学带隙、折射率和色散参数的影响。所制备的薄膜为直接带隙材料,利用Cauchy和Wemple模型能够很好地拟合所制备薄膜的折射率色散曲线。     

Characterizations of InxAlyGa1−x−yN alloy systems grown on GaN substrates by molecular-beam epitaxy

In_0.05Al_0.10Ga_0.85N epilayers and Al_0.10Ga_0.90N epilayers have been grown on bulk GaN single crystals and GaN templates by radio-frequency (RF) molecular-beam epitaxy (MBE). Photoluminescence (PL) spectra at different temperatures ranged from 8 to 300 K were measured for these epilayers. The decreasing rates of PL peak intensity of the In_0.05Al_0.10Ga_0.85N epilayers were smaller than those of the Al_0.10Ga_0.90N epilayers. The fluctuations of emission intensities were not observed in the In_0.05Al_0.10Ga_0.85N epilayers by cathodoluminescence observations at 77 K. Our results indicate that In-related effects exist in InAlGaN quaternary alloys on substrates with low-dislocation densities, however, expect that the localization effect related to In-segregation is weak.     

Influence of SiH4 on the WNx-PECVD process

Silane was added to an existing WN_x PECVD process in different flow ratios to the WF₆, to obtain higher thermal stability of the barrier in comparison to the WN_x. The deposition rate rises drastically with increased SiH₄/WF₆ ratios. The ternary compositions were investigated with regard to the sheet resistance and thickness. The X-ray diffraction (XRD) measurements of selected layers with low electrical resistivities in the as-deposited state show a broad amorphous peak like the WN_x barrier, indicating an amorphous structure. After characterising the as-deposited state of these samples, thermal treatments of the layers were performed at temperature of 600 °C for 1 h in vacuum.     

System Level Hardware/Software Partitioning Based on Simulated Annealing and Tabu Search

This paper presents two heuristics for automatic hardware/software partitioning of system level specifications. Partitioning is performed at the granularity of blocks, loops, subprograms, and processes with the objective of performance optimization with a limited hardware and software cost. We define the metric values for partitioning and develop a cost function that guides partitioning towards the desired objective. We consider minimization of communication cost and improvement of the overall parallelism as essential criteria during partitioning. Two heuristics for hardware/software partitioning, formulated as a graph partitioning problem, are presented: one based on simulated annealing and the other on tabu search. Results of extensive experiments, including real-life examples, show the clear superiority of the tabu search based algorithm.     

Effect of the Ge-molefraction on the subthreshold slope and leakage current of vertical Si/Si1−xGex MOSFETs

The effect of the Ge-concentration on the subthreshold behaviour of vertical Si/Si_1−xGe_x pMOSFETs and of complementary Si_1−xGe_x/Si nMOSFETs is investigated by using an analytical model, which includes thermionic emission across the hetero-barrier. It is shown that inclusion of Si_1−xGe_x and strained Si in the source region of the pMOSFET and nMOSFET respectively, suppresses the subthreshold slope roll-up substantially and lowers the leakage current of even the smallest devices with channel lengths down to 50 nm.     

一种紧凑型折射式红外搜索/跟踪光学系统设计

根据机载红外搜索/跟踪系统对大搜索框架角与小型化的需求,设计了一个三次成像光学系统,其像质优良,MTF达到衍射极限.对光路进行空间三维折叠,使其外形尺寸包络于一个球体内.光学系统的通光口径超过了包络球体外壳直径的52%,且球体直径约等于系统等效焦距.