Analysis of errors in thin-film optical parameters derived from spectrophotometric measurements at normal light incidence

A comparative analysis is made of the errors in deriving the optical parameters (n, refractive index; k, absorption coefficient; d, film thickness) of thin films from spectrophotometric measurements at normal light incidence. The errors in determining n, k, and d by the (TR(f)R(b)), (TR(f)R(m)), (TR(b)R(m)), (TR(f)), (TR(m)), and T(k = 0) methods are compared. It is shown that they are applicable to optical constants of thin films in the n > 1.5, k < 4.5, and d/lambda = (0.02-0.3) range, and their combinations make possible the determination of n and k to an accuracy of better than ?4%. To derive the optical constants in a wide spectral range with high accuracy and isolate the correct physical solutions reliably, one should apply all methods, using the relevant solutions with the lowest errors, as shown in this research, when determining the optical constants of As(2)S(3) and Sb(2)Se(3) films.     

Determination of optical constants of thin films and multilayer stacks by use of concurrent reflectance, transmittance, and ellipsometric measurements

Using measurements of reflectance, transmittance, and the ellipsometric parameter D, we have determined the thickness, refractive index, and the absorption coefficient of various thin films and thin-film stacks. (D, the relative phase between the p- and s-polarized components, is measured for both reflected and transmitted light.) These optical measurements are performed with a specially designed system at the fixed wavelength of lambda = 633 nm over the 10 degrees -75 degrees range of angles of incidence. The examined samples, prepared by means of sputtering on fused-silica substrates, consist of monolayers and trilayers of various materials of differing thickness and optical constants. These samples, which are representative of the media of rewritable phase-change optical disks, include a dielectric mixture of ZnS and SiO(2), an amorphous film of the Ge(2)Sb(2.3)Te(5) alloy, and an aluminum chromium alloy film. To avoid complications arising from reflection and transmission losses at the air-substrate interface, the samples are immersed in an index-matching fluid that eliminates the contributions of the substrate to reflected and transmitted light. A computer program estimates the unknown parameters of the film(s) by matching the experimental data to theoretically calculated values. Although our system can be used for measurements over a broad range of wavelengths, we describe only the results obtained at lambda = 633 nm.     

Polarization sensitivity of the SUMER instrument on SOHO

The Solar Ultraviolet Measurements of Emitted Radiation (SUMER) instrument on the Solar and Heliospheric Observatory (SOHO) satellite is sensitive to the state of linear polarization of the incident radiation primarily owing to two optical elements, the holographic grating and the wavelength scan mirror. The large angle of incidence of light striking the scan mirror, which varies from roughly 73.3 degrees to 81.6 degrees (with respect to the mirror normal), causes the mirror to act as a linear polarizer. Similarly, the spectrometer grating operates at incidence angles between 16.7 degrees and 35.0 degrees , adding to the polarization effect at some wavelengths. Measurement and characterization of this polarization sensitivity as a function of wavelength were performed with the engineering model optics (scan mirror and grating) and synchrotron radiation, which is nearly 100% linearly polarized, from the Super Anneau de Collisions d'Orsay (SUPERACO) positron storage ring in Orsay. The polarization sensitivity or modulation factor of the SUMER instrument was found to be between 0.4 and 0.6, depending on the wavelength and the angle of incidence of light striking the scan mirror; this agrees with the calculated polarization properties based on the measured optical constants for the silicon carbide mirror and grating.     

Effects of phase changes on reflection and their wavelength dependence in optical profilometry

The method as well as an appropriate instrumentation for measuring phase changes of reflected light is described. The phase changes on samples of Au, Al, Ag, and Cr evaporated films are measured for five wavelengths (lambda) from 442 to 633 nm, with respect to the phase change at the glass-air interface, where it should be zero. The measured results for the Au film are in fairly good agreement with values calculated by use of optical constants from a handbook or the complex refractive index measured by an ellipsometer. The phase changes for Al and Ag films are different from calculated values by ~5 degrees or a shift length of 4.4 nm at lambda = 633 nm, while those of the Cr film show large shifts as high as 16 degrees or a shift length of 9.8 nm at lambda = 442 nm.     

Fiber-linked Faraday effect current sensor by use of a flint glass cell with dielectric-coated retardation-compensated total reflection surfaces

A new type of Faraday effect optical current transformer has been developed that uses a single block of square flint glass with dielectric-coated total reflection surfaces as the sensing element. Numerical calculation has shown that the coating of two dielectric layers of 45.59-nm-thick Ta2O5 and 448.35-nm-thick SiO2 films on a flint glass surface produces zero retardation total reflection for the 45 degrees incident angle of light at lambda = 840 nm with great incident angle, wavelength, and film thickness tolerances. A fiber-linked current transformer has been constructed and experimentally demonstrated to exhibit high isolation from surrounding currents as well as high stability against mechanical disturbances.     

In-line broadband 270 degrees (3lambda/4) chevron four-reflection wave retarders

The net differential phase shift Delta(t) introduced between the orthogonal p and s linear polarizations after four successive total internal reflections inside an in-line chevron dual-Fresnel-rhomb retarder is a function of the first internal angle of incidence phi and prism refractive index n. Retardance of 3lambda/4 (i.e., Delta(t)=270 degrees) is achieved with minimum angular sensitivity when phi=45 degrees and n=1.900822. Several optical glasses with this refractive index are identified. For Schott glass SF66 the deviation of Delta(t) from 270 degrees is < or = 4 degrees over a wavelength range of 0.55 < or = lambda < or = 1.1 microm in the visible and near-IR spectrum. For a SiC prism, whose totally reflecting surfaces are coated with an optically thick MgF(2) film, Delta(t)=270 degrees at two wavelengths: lambda(1)=0.707 microm and lambda(2)=4.129 microm. This coated prism has a maximum retardance error of approximately 5 degrees over > three octaves (0.5 to 4.5 microm) in the visible, near-, and mid-IR spectral range. Another mid-IR 3lambda/4 retarder uses a Si prism, which is coated by an optically thick silicon oxynitride film of the proper composition, to achieve retardance that differs from 270 degrees by < 0.5 degrees over the 3-5 microm spectral range.     

Fabrication study of proton injection layer suitable for electrochromic switchable mirror glass

An electrochromic (EC) switchable mirror glass can change between a reflective state and a transparent state with voltage application. The conventional device has a multilayer of Mg₄Ni/Pd/Al/Ta₂O₅/WO₃/indium-tin oxide on a transparent substrate. A palladium thin film was used as the proton injection layer. For practical use, we attempted to reduce the amount of palladium thin film from the viewpoints of the reduction in total fabrication cost and the efficient use of resources. The thickness of the film was related to the optical switching properties of the device. Although the device with a 1-nm-thick palladium film showed a high transmittance of 63% in the transparent state, its low switching durability was not suitable for practical application.Moreover, we were able to adapt a palladium-based alloy (Pd_0.8Ag_0.2) which is a well-known hydrogen permeation membrane as the proton injection layer to reduce the amount of palladium thin film. As a result, we found that a 4-nm-thick Pd-Ag thin film has good adaptability to the EC switchable mirror.     

Polarization-dependent angular-optical reflectance in solar-selective SnOx:F/Al2O3/Al reflector surfaces

Polarization-dependent angular-optical properties of spectrally selective reflector surfaces of fluorine-doped tin oxide (SnOx:F) deposited pyrolytically on anodized aluminum are reported. The angular-reflectance measurements, for which both s- and p-polarized light are used in the solar wavelength range 0.3-2.5 microm, reveal strong spectral selectivity, and the angular behavior is highly dependent on the polarizing component of the incident beam, the total film thickness, and the individual thickness of the Al2O3 and the SnO2:F layers. The anodic A12O3 layers were produced electrochemically and varied between 100 and 205 nm in thickness. The SnOx:F films were grown pyrolytically at a temperature of 400 degrees C with film thicknesses varying in the range 180-320 nm. The reflectors were aimed at silicon solar cells, and good spectrally selective reflector characteristics were achieved with these thinly preanodized, SnOx:F/Al samples; that is, high cell reflectance was obtained for wavelengths below 1.1 microm and low thermal reflectance for wavelengths above 1.1 microm, with the best samples having values of 0.80 and 0.42, respectively, at near-normal angles of incidence. This corresponds to an anodic layer thickness of 155 nm. Both the angular calculations and the experimental measurements show that the cell reflectance is relatively insensitive to the incidence angle, and a low thermal reflectance is maintained up to an angle of approximately 60 degrees.     

Fabrication of single-walled carbon-nanotube-based pressure sensors

We report on the fabrication and characterization of bulk micromachined pressure sensors based on individual single-walled carbon nanotubes (SWNTs) as the active electromechanical transducer elements. The electromechanical sensor device consists of an individual electrically connected SWNT adsorbed on top of a 100-nm-thick atomic layer deposited (ALD) circular alumina (Al(2)O(3)) membrane with a radius in the range of 50-100 microm. A white light interferometer (WLI) was used to measure the deflection of the membrane due to differential pressure, and the mechanical properties of the device were characterized by bulge testing. Finally, we performed the first electromechanical measurements on strained metallic SWNTs adhering to a membrane and found a piezoresistive gauge factor of approximately 210 for metallic SWNTs.     

Growth and the microstructural and ferroelectric characterization of oriented BaMgF(4) thin films

The growth of ferroelectric BaMgF(4) thin films on Si(100), sapphire, and other substrates under ultrahigh vacuum (UHV) conditions is reported. Microstructural characterization of the films using transmission electron microscopy (TEM) revealed that they were oriented crystalline films, although not epitaxial. Ferroelectric hysteresis measurements yielded spontaneous polarization and coercivity values of almost 1.0 muC/cm(2) and 160 kV/cm, respectively. The discrepancy with the bulk ferroelectric values were attributed to the electrical contacts, impurities in the film, and lack of polar axis orientation. Preliminary capacitance-voltage (C-V) hysteresis measurements on a 480-nm-thick BaMgF(4) film yielded a 10.8-V threshold shift (memory window) in response to a +/-10-V programming voltage for a MIS gate structure similar to that of the ferroelectric memory field-effect transistor (FEMFET).     

Wide-angle, high-extinction-ratio, infrared polarizing beam splitters using frustrated total internal reflection by an embedded centrosymmetric multilayer

A centrosymmetric multilayer stack of two transparent thin-film materials, which is embedded in a high-index prism, is designed to function as an efficient polarizer or polarizing beam splitter (PBS) under conditions of frustrated total internal reflection over an extended range of incidence angles. The S(LH)(k)LHL(HL)(k)S multilayer structure consists of a high-index center layer H sandwiched between two identical low-index films L and high-index-low-index bilayers repeated (k times) on both sides of the central trilayer maintaining the symmetry of the entire stack. For a given set of refractive indices, all possible solutions for the thicknesses of the layers that suppress the reflection of p-polarized light at a specified angle, and the associated reflectance of the system for the orthogonal s polarization, are determined. The angular and spectral sensitivities of polarizing multilayer stacks employing 3, 7, 11, 15, and 19 layers of BaF(2) and PbTe thin films embedded in a ZnS prism, operating at lambda=10.6 microm, are presented. The 15- and 19-layer stack designs achieve extinction ratios (ER) >30 dB in both reflection and transmission over a 46 degrees -56 degrees field of view inside the prism. Spectral analysis reveals additional discrete polarizing wavelengths other than the design wavelength (lambda=10.6 microm). The 11-, 15-, and 19-layer designs function as effective s-reflection polarizers (|R(s)|(2)>99%) over a 2-3 microm bandwidth. The effect of decreasing the refractive index contrast between the H and L layers on the resulting ER is also considered.     

Spatial and polarization characteristics of radiation reflected by composite materials

In the spectral regions 0.63 and 1.15 m, measurements are made of the degree of polarization and indicatrix of radiation reflected from the surface of composite materials before and after their heating in air by radiation from a CO₂ laser.Notation wavelength at which measurements are made - p() spectral reflection coefficient - equivalent solid angle - d elementary solid angle - total reflected radiant flux - I₀ intensity of radiation in the direction of mirror reflection - f() normalized indicatrix of the reflected radiation - angle at which the degree of polarization and the intensity of the reflected radiation were measured - P degree of polarization of the reflected radiation Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 56, No. 5, pp. 753–759, May, 1989.     

Optical characterization of dielectric and semiconductor thin films by use of transmission data

A method to calculate the optical functions n(lambda) and k(lambda) by use of the transmission spectrum of a dielectric or semiconducting thin film measured at normal incidence is described. The spectrum should include the low-absorption region and the absorption edge to yield the relevant optical characteristics of the material. The formulas are derived from electromagnetic theory with no simplifying assumptions. Transparent films are considered as a particular case for which a simple method of calculation is proposed. In the general case of absorbing films the method takes advantage of some properties of the transmittance T(lambda) to permit the parameters in the two regions mentioned above to be calculated separately. The interference fringes and the optical path at the extrema of T(lambda) are exploited for determining with precision the refractive index and the film thickness. The absorption coefficient is computed at the absorption edge by an efficient iterative method. At the transition zone between the interference region and the absorption edge artifacts in the absorption curve are avoided. A small amount of absorption of the substrate is allowed for in the theory by means of a factor determined from an independent measurement, thus improving the quality of the results. Application of the method to a transmission spectrum of an a:Si(x)N(1-x):H film is illustrated in detail. Refractive index, dispersion parameters, film thickness, absorption coefficient, and optical gap are given with the help of tables and graphs.     

Complex reflection coefficients for the parallel and perpendicular polarizations of a film-substate system

The complex reflection coefficients Rv(phi,zeta) of a film-substrate system for the parallel (v = p) and perpendicular (v = s) polarizations are examined in detail as functions of the angle of incidence phi(0 相似文献   

彩色冷反光镜的斜入射效应与补偿设计

讨论了斜入射对薄膜的光学特性的影响，提出了呈椭球旋转面的彩色冷反光镜膜层的均匀分布不同行于平行平面薄膜的均匀分布，在同一圆周方向上的膜层分布应均匀等厚，而从镜底到到镜口的轴向方向膜层应逐渐加厚。     

Optical constants and Drude analysis of sputtered zirconium nitride films

Opaque and semitransparent dc magnetron-sputtered ZrN films on glass and silicon have been optically characterized with spectral reflectance measurements and ellipsometry. High rate sputtered ZrN has good optical selectivity, i.e., higher than 90% infrared reflectance and a pronounced reflectance step in the visible to a reflectance minimum of less than 10% at 350 nm. The results are comparable with those obtained for single crystalline samples and those prepared by chemical vapor deposition. The complex optical constant (N = n v ik) for opaque films has been determined in the 0.23-25-μm wavelength range with Kramers-Kronig integration of bulk reflectance combined with oblique incidence reflectance for p-polarized light. A variable angle of incidence spectroscopic ellipsometer has been used for determination of the optical constants in the 0.28-1.0-μm wavelength region. The results of the two methods show excellent agreement. The results indicate that ZrN is free electronlike and the Drude model can be applied. The best opaque films had Drude plasma energies (?ω(p) between 6.6 and 7.5 eV and relaxation energies (?/τ) between 0.29 and 0.36 eV. Ellipsometer data for the semitransparent films show that the refractive index (n) in the visible increases with decreasing film thickness whereas the extinction coefficient (k) is essentially unchanged. The optical properties are improved by deposition upon a heated substrate.     

Interface engineered ultrashort period Cr-Ti multilayers as high reflectance mirrors and polarizers for soft x rays of lambda = 2.74 nm wavelength

Cr-Ti multilayers with ultrashort periods of 1.39-2.04 nm have been grown for the first time as highly reflective, soft-x-ray multilayer, near-normal incidence mirrors for transition radiation and Cherenkov radiation x-ray sources based on the Ti-2p absorption edge at E = 452 eV (lambda = 2.74 nm). Hard, as well as soft, x-ay reflectivity and transmission electron microscopy were used to characterize the nanostructure of the mirrors. To achieve minimal accumulated roughness, improved interface flatness, and to avoid intermixing at the interfaces, each individual layer was engineered by use of a two-stage ion assistance process during magnetron sputter deposition: The first 0.3 nm of each Ti and Cr layer was grown without ion assistance, and the remaining 0.39-0.72 nm of the layers were grown with high ion-neutral flux ratios phi (phiTi = 3.3, phiCr = 2.2) and a low energy Eion (ETi = 23.7 and ECr = 21.2), ion assistance. A maximum soft-x-ray reflectivity of R = 2.1% at near-normal incidence (approximately 78.8 degrees) was achieved for a multilayer mirror containing 100 bilayers with a modulation period of 1.379 nm and a layer thickness ratio of tau = 0.5. For a polarizing multilayer mirror with 150 bilayers designed for operation at the Brewster angle, 45 degrees, an extinction ratio, Rs/Rp, of 266 was achieved with an absolute reflectivity of R = 4.3%.     

The rates of charge separation and energy destructive charge recombination processes within an organic dyad in presence of metal-semiconductor core shell nanocomposites

Steady state and time resolved spectroscopic measurements were made at the ambient temperature on an organic dyad, 1-(4-Chloro-phenyl)-3-(4-methoxy-naphthalen-1-yl)-propenone (MNCA), where the donor 1-methoxynaphthalene (1 MNT) is connected with the acceptor p-chloroacetophenone (PCA) by an unsaturated olefinic bond, in presence of Ag@TiO2 nanoparticles. Time resolved fluorescence and absorption measurements reveal that the rate parameters associated with charge separation, k(CS), within the dyad increases whereas charge recombination rate k(CR) reduces significantly when the surrounding medium is changed from only chloroform to mixture of chloroform and Ag@TiO2 (noble metal-semiconductor) nanocomposites. The observed results indicate that the dyad being combined with core-shell nanocomposites may form organic-inorganic nanocomposite system useful for developing light energy conversion devices. Use of metal-semiconductor nanoparticles may provide thus new ways to modulate charge recombination processes in light energy conversion devices. From comparison with the results obtained in our earlier investigations with only TiO2 nanoparticles, it is inferred that much improved version of light energy conversion device, where charge-separated species could be protected for longer period of time of the order of millisecond, could be designed by using metal-semiconductor core-shell nanocomposites rather than semiconductor nanoparticles only.