Effect of quantum dots on InAs/GaAs p-i-p quantum dots infrared photodetectors

ABSTRACT

In this paper, the InAs/GaAs p-i-p quantum dots infrared photodetectors (QDIPs) were successfully demonstrated by Apsys software. It consists of Al_0.3Ga_0.7As/GaAs structure to reduce dark current and InAs quantum dots (QDs) embedded in In_0.15Ga_0.85As as an active layer. The effect of structure parameters of InAs QDs on the dark current, photocurrent of the device and SNR (signal to noise) is discussed respectively, including different QDs density, the number of QD layer, GaAs thickness between QDs layers and Al_0.3Ga_0.7As, and GaAs thickness between two the QD layers.     

Effects of substrate orientation on opto-electronic properties in self-assembled InAs/GaAs quantum dots

Electronic structure and optical transition characteristics in (100), (110), and (111) oriented InAs/GaAs quantum dots (containing \({\sim }2\) million atoms) were studied using a combination of valence force-field molecular mechanics and 20-band \(sp^{3}d^{5}s^{*}\) atomistic tight-binding framework. These quantum dots are promising candidates for non-traditional applications such as spintronics, quantum cryptography and quantum computation, but suffer from the deleterious effects of various internal fields. Here, the dependence of strain and polarization fields on the substrate orientation is reported and discussed. It is found that, compared to the (100) and (110) oriented counterparts, quantum dots grown on the (111) oriented substrate exhibit a smaller splitting (non-degeneracy) in the excited \(P\) states and enhanced isotropy in the interband optical emission characteristics.     

Lasing characteristics of InGaAs-GaAs polarization controlledvertical-cavity surface-emitting laser grown on GaAs (311) B substrate

We have demonstrated an oxide confinement polarization controlled vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs (311)B substrate. The polarization state was well controlled along the [2¯33] crystal direction due to an anisotropic gain in the (311)B plane. We fabricated a small oxide aperture VCSEL with a threshold of 260 μA and realized single-transverse mode and single-polarization operation for the first time. The sidemode suppression ratio (SMSR) was 35 dB and the orthogonal polarization suppression ratio (OPSR) was 25 dB. In addition, we have measured polarization and transverse mode characteristics of multi- and single-transverse mode devices under high-speed modulation. In the multimode device of 12 μm×12 pm oxide aperture, we have achieved stable polarization operation of over 25-dB OPSR up to 10 Gb/s and have observed no power penalty due to polarization instability under 2.5-Gb/s pseudorandom modulation. The single-mode device showed stable single-transverse mode and polarization under the modulation conduction up to 5 GHz of sinusoidal modulation. SMSR and OPSR were over 30 and 10 dB, respectively     

石墨烯量子点制备方法研究进展

石墨烯量子点(graphene quantum dots,GQDs)是三维尺度限域的零维纳米材料,以其优异的电学、热学和光学性能在众多领域备受关注。介绍了石墨烯量子点的主要制备方法,自上而下法主要包括水热法、电化学法和化学剥离碳纤维法,自下而上法主要包括溶液化学法、微波辅助和超声法,对纳米刻蚀法和钌催化C60转化法也做了简要介绍。     

Synthesis and luminescence of ceria decorated graphene quantum dots (GQDs): Evolution of band gap

ABSTRACT

Graphene quantum dots (GQDs) and CeO₂-GQDs were synthesized by using a facile hydrothermal method at 140°C. All the synthesized materials were characterized by TEM, UV-Vis Spectroscopy, FT-IR, Raman Spectroscopy and PL. Ceria decorated GQDs show different emission peaks with different excitation of wavelengths. The discrete change in dominant luminescence features of the GQDs and their composites indicate that the variation in PL occurs because of alteration in its shape, size and bandgap. Based on the experimental results of PL peak wavelength, the emission is attributed to quasi-molecular PL from the fragments composed of a few aromatic rings with oxygen containing functional groups.     

Effects of scattering resonances on carrier-carrier entanglement in charged quantum dots

We address the problem of the entanglement generation in an electron-scattering by a 1D double-barrier resonant tunnelling device. In particular we analyze the role played by transport resonances in the appearance of quantum correlations between the energy states of the electrons. The entanglement is not sensitive to the presence of Breit-Wigner resonances, while it may be controlled by manipulating Fano resonances. Such a behavior is ascribed to the different mechanisms characterizing the two types of processes.     

Lasing at 1.28 /spl mu/m of InAs-GaAs quantum dots with AlGaAs cladding layer grown by metal-organic chemical vapor deposition

We report the device characteristics of stacked InAs-GaAs quantum dot (QD) lasers cladded by an Al/sub 0.4/Ga/sub 0.6/As layer grown at low temperature by metal-organic chemical vapor deposition. In the growth of quantum dot lasers, an emission wavelength shifts toward a shorter value due to the effect of postgrowth annealing on quantum dots. This blueshift can be suppressed when the annealing temperature is below 570/spl deg/C. We achieved 1.28-/spl mu/m continuous-wave lasing at room temperature of five layers stacked InAs-GaAs quantum dots embedded in an In/sub 0.13/Ga/sub 0.87/As strain-reducing layer whose p-cladding layer was grown at 560/spl deg/C. From the experiments and calculations of the gain spectra of fabricated quantum dot lasers, the observed lasing originates from the first excited state of stacked InAs quantum dots. We also discuss the device characteristics of fabricated quantum dot lasers at various growth temperatures of the p-cladding layer.     

Ab initio Study of the Si Adsorption on Mo(110)

The energetics and the electronic structure of the Si/Mo(110) surface have been investigated using density functional theory calculations based on the generalized gradient approximation. The calculated potential energy surface for a single Si adatom reveals that a hollow site is favored for the adsorption of Si on Mo(110). The energy barrier for hopping between the hollow sites is located at the bridge site and is found to be 0.64 eV. The electron density plot indicates that four Mo-Si covalent bonds were formed around the Si atom at the hollow site. According to the surface formation energy for different Si coverage, 1 ML Si/Mo(110)–p(1× 1) is energetically favorable for a Si-rich environment. For the Si-poor case, the clean Mo(110) surface is the most stable structure.     

Microscopic Description of Nanostructures Grown on (N11) Surfaces

We report on a theoretical study of GaAs/InGaAs based nanostructures grown along the [N11] direction. The elastic deformations of the structures were calculated by means of the continuum elasticity theory, taking into account commensurability constraints at the interfaces. The strained atomic positions were derived, as well as the strain induced piezoelectric polarizations and electric fields. These data were used as an input for the calculation of the fundamental electronic transitions of our systems within the empirical tight-binding approach. These results are compared with the envelope function methods. We applied our approach to a (211) oriented InAs quantum dot embedded in a GaAs matrix, and to a (311) oriented InGaAs quantum wire, embedded in AlGaAs barriers. In both cases, we obtained a non-symmetric elastic deformation due to the lower symmetry of (N11)-oriented structures. Moreover, the atomic displacements and the strain induced piezoelectric potential induce a separation of the hole and electron wave functions, which are shifted from the dot center.     

Ab initio calculations of the BaTiO3 (100) and (110) surfaces

We present and discuss the results of calculations of BaTiO₃ (100) surface relaxation and surface rumpling with two different terminations (BaO and TiO₂) and BaTiO₃ (110) surface relaxation with three different terminations (Ba, TiO and O). These are based on a hybrid B3PW exchange-correlation technique. The O-terminated A-type BaTiO₃ (110) surface has a surface energy close to that for the (100), which indicates that both (110) and (100) BaTiO₃ surfaces can exist simultaneously in perovskite ceramics.     

110 kV变压器局部放电试验分析

介绍110 kV变压器局部放电试验电源类型及容量的选择,分析现场试验接线方式、干扰抑制措施等,结合实例说明开展110 kV变压器局部放电试验的必要性.     

On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects

Due to the large electron mobility gain cased by uniaxial stress along the [110] directions on (001) silicon substrate, in this paper, the impact of [110]/(001) uniaxial strain and quantum mechanical effects (QMEs) on the threshold voltage of strained-Silicon nMOSFETs is studied by developing a physically-based model. The impact of [110]/(001) stress on the band structure parameters such as density-of-state (DOS) in the conduction and valance band, band-gap and intrinsic carrier concentration is quantized first. Based on a modified threshold surface potential, the threshold voltage model is then proposed by solving the 2-D Poisson’s equation and also by taking short channel effects, quantum effects and other secondary effects into consideration. Our analytical results agree with both TCAD and experimental data. The threshold voltage with the stress along arbitrary orientation can be analyzed analogously. This model can also be used for the design of nanoscale strained-Si nMOSFETs.     

Multiple-wavelength emission from In/sub x/Ga/sub 1-x/As-GaAs quantum wells grown on a nanoscale faceted GaAs substrate by molecular beam epitaxy

Multiple-wavelength photoluminescence (PL) spanning a 160-nm range from 980 to 1140 nm (77 K) has been obtained from In/sub x/Ga/sub 1-x/As-GaAs quantum wells (QWs) with varying In composition x on a nanoscale faceted (nanofaceted) GaAs substrate grown by molecular beam epitaxy. Five nanofaceted regions which consist of periodic [100]-(n11) (n = 3 or 1) facets along [011~] with different periods were prepared on a single substrate by interferometric lithography and selective growth of GaAs. The pattern period p was varied from infinity (large-area unpatterned) to 210 nm while the lateral width of the (n11) facet region was kept constant at /spl sim/180 to 200 nm within each period. A 5-nm-thick In/sub 0.23/Ga/sub 0.77/As layer was deposited on this multiple-period nanofaceted single GaAs surface in a single-run growth. Orientation-dependent migration and incorporation (ODMI) of In atoms [mass transport of incident In atoms from the (n11) to adjacent [100] facets] results in a variation of x of the In/sub x/Ga/sub 1-x/As layer section on the [100] facet as the width of the [100] facet was changed from /spl sim/20 to /spl sim/200 nm. ODMI induces a higher x on the [100] facet for smaller p. The PL exhibits a polarization dependence which is more pronounced for decreasing p [i.e., the width of [100] facet]. Consistent variations of the PL peak energy and linear polarization along the pattern direction confirm that ODMI results in a variation of the In composition and imply that the In/sub x/Ga/sub 1-x/As layer on a [100] facet has characteristics of a quantum wire as its width is decreased to /spl sim/20 nm for p = 210 nm. A possible application of nanopatterned growth to wavelength-division-multiplexing transmitters is discussed.     

Preparation of a sensor substrate using functionalized mesoporous silica on a gold film for surface plasmon resonance (SPR) spectroscopy

The use of surface plasmon resonance (SPR) spectroscopy has been applied to a wide variety of fields such as biosensors and surface analysis instruments. In general, a SPR substrate is prepared using self-assembled monolayer (SAM) method of organic molecules as receptor for the target on a layer of gold or silver. However, mesoporous inorganic materials such as SBA-15 have benefits as sensor substrate for SPR. Mesoporous silica has a large surface area which receptor molecule can be attached and has a rigid body which has an excellent stability in the extreme condition compared to organic sensing layer. We prepared an organic modified mesoporous silica and successfully immobilized it on a gold surface, in an attempt to use as a substrate for SPR spectroscopy. For the comparison of sensitivity of prepared substrate, Pt²⁺ detection was selected as a model system. Substrate prepared in this study exhibited the capability of selective sensing for Pt²⁺ ions.     

Precursor-dependent structural diversity in luminescent carbonized polymer dots (CPDs): the nomenclature

Carbon dots (CDs) have received immense attention in the last decade because they are easy-to-prepare, nontoxic, and tailorable carbon-based fluorescent nanomat...     

110kV常德电网自动电压控制(AVC)研究

110kV常德电网自动电压控制(Automatic Voltage Control,简称AVC)研究,采用经济压差(△Uj)最优无功潮流算法,把电网按电压分层计算控制,使用一次电网电压约束及注入电网无功最优值为目标的九区图,配合与其对应的调控策略,可获得最好的电压质量和最低的网损率.大方式下网损降低0.2MW,21.7%;年节约电量约140万kWh;提高末端电压2.0kV,1.8%.基于调度自动化主站实施,简单易行,经济实惠.随着对电容器进行平滑性调节的改造,AVC调控将趋向精确.同时,对用户提出了无功优化的新要求.