Characterizing the dependence of vegetation model parameters on crop structure, incidence angle, and polarization at L-band

To retrieve soil moisture over vegetation-covered areas from microwave radiometry, it is necessary to account for vegetation effects. At L-band, many retrieval approaches are based on a simple model that relies on two vegetation parameters: the optical depth (/spl tau/) and the single-scattering albedo (/spl omega/). When the retrievals are based on multiconfiguration measurements, it is necessary to take into account the dependence of /spl tau/ and /spl omega/ on the system configuration, in terms of incidence angle and polarization. In this paper, this dependence was investigated for several crop types (corn, soybean, wheat, grass, and alfalfa) based on L-band experimental datasets. The results should be useful for developing more accurate forward modeling and retrieval methods over mixed pixels including a variety of vegetation types.     

Frequency domain characterization of LoS nonfading indoor wireless LAN channel employing frequency and polarization diversity in the 63.4-65.4 GHz band

This paper presents results of frequency domain measurements conducted to characterize the distortionless transmission bandwidth (DTB) of indoor nonfading channels employing vertically and horizontally polarized antennas in the frequency band 63.4-65.4 GHz. The mean delay spread (/spl tau//sub mean/), root mean square (rms) delay spread (/spl tau//sub rms/), and the DTB of the channel are also presented as functions of distance between terminals and are compared for both polarizations. The dependence of DTB on the separation between terminals d is modeled as DTB=kd/sup -n/ where k is a constant. /spl tau//sub mean/ increases linearly with d, and its relationship with DTB is characterized as DTB=(1//spl alpha//spl tau//sub mean//sup n/)+c, where /spl alpha/ and c are constants. The effectiveness of frequency and polarization diversity in mitigating the effects of multipath fading in indoor channels has also been evaluated. The performance of both diversity techniques when modulated signals with high data rates for multimedia applications are utilized is presented for maximum selection combining. The performance of frequency diversity is also shown as a function of frequency separation between diversity branch signals to determine whether an optimal frequency separation exists.     

High responsivity InP-InGaAs quantum-well infrared photodetectors: characteristics and focal plane array performance

We report the detailed characteristics of long-wavelength infrared InP-In/sub 0.53/Ga/sub 0.47/As quantum-well infrared photodetectors (QWIPs) and 640/spl times/512 focal plane array (FPA) grown by molecular beam epitaxy. For reliable assessment of the detector performance, characterization was performed on test detectors of the same size and structure with the FPA pixels. Al/sub 0.27/Ga/sub 0.73/As-GaAs QWIPs with similar spectral response (/spl lambda//sub p/=/spl sim/7.8 /spl mu/m) were also fabricated and characterized for comparison. InP-InGaAs QWIPs (20-period) yielded quantum efficiency-gain product as high as 0.46 under -3-V bias with a 77-K peak detectivity above 1/spl times/10/sup 10/ cm/spl middot/Hz/sup 1/2//W. At 70 K, the detector performance is background limited with f/2 aperture up to /spl sim/ 3-V bias where the peak responsivity (2.9 A/W) is an order of magnitude higher than that of the AlGaAs-GaAs QWIP. The results show that impact ionization in similar InP-InGaAs QWIPs does not start until the average electric-field reaches /spl sim/25 kV/cm, and the detectivity remains high under moderately large bias, which yields high responsivity due to large photoconductive gain. The InP-InGaAs QWIP FPA offers reasonably low noise equivalent temperature difference (NETD) even with very short integration times (/spl tau/).70 K NETD values of the FPA with f/1.5 optics are 36 and 64 mK under bias voltages of -0.5 V (/spl tau/=11 ms) and -2 V (/spl tau/=650 /spl mu/s), respectively. The results clearly show the potential of InP-InGaAs QWIPs for thermal imaging applications requiring high responsivity and short integration times.     

Robust uncertainty principles: exact signal reconstruction from highly incomplete frequency information

This paper considers the model problem of reconstructing an object from incomplete frequency samples. Consider a discrete-time signal f/spl isin/C/sup N/ and a randomly chosen set of frequencies /spl Omega/. Is it possible to reconstruct f from the partial knowledge of its Fourier coefficients on the set /spl Omega/? A typical result of this paper is as follows. Suppose that f is a superposition of |T| spikes f(t)=/spl sigma//sub /spl tau//spl isin/T/f(/spl tau/)/spl delta/(t-/spl tau/) obeying |T|/spl les/C/sub M//spl middot/(log N)/sup -1/ /spl middot/ |/spl Omega/| for some constant C/sub M/>0. We do not know the locations of the spikes nor their amplitudes. Then with probability at least 1-O(N/sup -M/), f can be reconstructed exactly as the solution to the /spl lscr//sub 1/ minimization problem. In short, exact recovery may be obtained by solving a convex optimization problem. We give numerical values for C/sub M/ which depend on the desired probability of success. Our result may be interpreted as a novel kind of nonlinear sampling theorem. In effect, it says that any signal made out of |T| spikes may be recovered by convex programming from almost every set of frequencies of size O(|T|/spl middot/logN). Moreover, this is nearly optimal in the sense that any method succeeding with probability 1-O(N/sup -M/) would in general require a number of frequency samples at least proportional to |T|/spl middot/logN. The methodology extends to a variety of other situations and higher dimensions. For example, we show how one can reconstruct a piecewise constant (one- or two-dimensional) object from incomplete frequency samples - provided that the number of jumps (discontinuities) obeys the condition above - by minimizing other convex functionals such as the total variation of f.     

Entropy and the law of small numbers

Two new information-theoretic methods are introduced for establishing Poisson approximation inequalities. First, using only elementary information-theoretic techniques it is shown that, when S/sub n/=/spl Sigma//sub i=1//sup n/X/sub i/ is the sum of the (possibly dependent) binary random variables X/sub 1/,X/sub 2/,...,X/sub n/, with E(X/sub i/)=p/sub i/ and E(S/sub n/)=/spl lambda/, then D(P(S/sub n/)/spl par/Po(/spl lambda/)) /spl les//spl Sigma//sub i=1//sup n/p/sub i//sup 2/+[/spl Sigma//sub i=1//sup n/H(X/sub i/)-H(X/sub 1/,X/sub 2/,...,X/sub n/)] where D(P(S/sub n/)/spl par/Po(/spl lambda/)) is the relative entropy between the distribution of S/sub n/ and the Poisson (/spl lambda/) distribution. The first term in this bound measures the individual smallness of the X/sub i/ and the second term measures their dependence. A general method is outlined for obtaining corresponding bounds when approximating the distribution of a sum of general discrete random variables by an infinitely divisible distribution. Second, in the particular case when the X/sub i/ are independent, the following sharper bound is established: D(P(S/sub n/)/spl par/Po(/spl lambda/))/spl les/1//spl lambda/ /spl Sigma//sub i=1//sup n/ ((p/sub i//sup 3/)/(1-p/sub i/)) and it is also generalized to the case when the X/sub i/ are general integer-valued random variables. Its proof is based on the derivation of a subadditivity property for a new discrete version of the Fisher information, and uses a recent logarithmic Sobolev inequality for the Poisson distribution.     

RF HBT oscillators with low-phase noise and high-power performance utilizing a (/spl lambda//4/spl plusmn//spl delta/) open-stubs resonator

This paper presents a new type of transmission-line resonator and its application to RF (microwave and millimeter-wave) heterojunction bipolar transistor (HBT) oscillators. The resonator is a parallel combination of two open stubs having length of /spl lambda//4/spl plusmn//spl delta/(/spl delta//spl Lt//spl lambda/), where /spl lambda/ is a wavelength at a resonant frequency. The most important feature of this resonator is that the coupling coefficient (/spl beta//sub C/) can be controlled by changing /spl delta/ while maintaining unloaded Q-factor (Q/sub u/) constant. Choosing a small value of /spl delta/ allows us to reduce /spl beta//sub C/ or equivalently to increase loaded Q-factor (Q/sub L/). Since coupling elements such as capacitors or electromagnetic gaps are not needed, /spl beta//sub C/ and Q/sub L/ can be precisely controlled based on mature lithography technology. This feature of the resonator proves useful in reducing phase noise and also in enhancing output power of microwave oscillators. The proposed resonator is applied to 18-GHz and 38-GHz HBT oscillators, leading to the phase noise of -96-dBc/Hz at 100-kHz offset with 10.3-dBm output power (18-GHz oscillator) and -104-dBc/Hz at 1-MHz offset with 11.9 dBm (38-GHz oscillator). These performances are comparable to or better than state-of-the-art values for GaAs- or InP-based planar-circuit fundamental-frequency oscillators at the same frequency bands.     

A Micropower CMOS-Instrumentation Amplifier

A CMOS switched capacitor instrumentation amplifier is presented. Offset is reduced by an auto-zero technique and effects due to charge injection are attenuated by a special amplifier configuration. The circuit which is realized in a 4-/spl mu/m double poly process has an offset (/spl tau/) of 370 /spl mu/V, an rms input referred integrated noise (0.5 -f/sub c//2) of 79 /spl mu/V, and consumes only 21 /spl mu/W (f/sub c/ = 8 kHz, V/sub DD/ = 3 V).     

Uniplanar compact wideband bandstop filter

A uniplanar wideband bandstop filter is proposed using two bent open-end stubs. The proposed filter consists of the bent connecting line of /spl lambda//sub g//2 between two bent /spl lambda//sub g//4 stubs, which results in wideband design with a rejection bandwidth of 90% at 2.05 GHz. Further, the connecting line and stubs have the same characteristic impedance. The proposed filter compared to the conventional one is also more compact. The area of the novel filter is (/spl lambda//sub g//4)/sup 2/ at the center frequency of the stopband, while the area of the filter realized using the nonbent stubs and connecting line is 2(/spl lambda//sub g//4)/sup 2/ for the same stopband characteristics.     

Exact thresholds and optimal codes for the binary-symmetric channel and Gallager's decoding algorithm A

We show that for the case of the binary-symmetric channel and Gallager's decoding algorithm A the threshold can, in many cases, be determined analytically. More precisely, we show that the threshold is always upper-bounded by the minimum of (1-/spl lambda//sub 2//spl rho/'(1))/(/spl lambda/'(1)/spl rho/'(1)-/spl lambda//sub 2//spl rho/'(1)) and the smallest positive real root /spl tau/ of a specific polynomial p(x) and we observe that for most cases this bound is tight, i.e., it determines the threshold exactly. We also present optimal degree distributions for a large range of rates. In the case of rate one-half codes, for example, the threshold x/sub 0//sup */ of the optimal degree distribution is given by x/sup *//sub 0//spl sim/0.0513663. Finally, we outline how thresholds of more complicated decoders might be determined analytically.     

Order statistics from a logistic distribution and applications to survival and reliability analysis

Joint moments involving arbitrary powers of order statistics are the main concern. Consider order statistics u/sub 1/ /spl les/ u/sub 2/ /spl les/ /spl middot//spl middot//spl middot/ /spl les/ u/sub k/ coming from a simple random sample of size n from a real continuous population where u/sub 1/ = x/sub r(1):n/ is order-statistic #r/sub 1/, u/sub 2/ = x/sub r(1)+r(2):n/ is order statistic #(r/sub 1/ + r/sub 2/), et al., and u/sub k/ = x/sub r(1)+/spl middot//spl middot//spl middot/+r(k):n/ is order statistic #(r/sub 1/ +/spl middot//spl middot//spl middot/+ r/sub k/). Product moments are examined of the type E[u/sub 1//sup /spl alpha/(1)/ /spl middot/ u/sub 2//sup /spl alpha/(2)//sub /spl middot/ /spl middot//spl middot//spl middot//spl middot//u/sub k//sup /spl alpha/(k)/] where /spl alpha//sub 1/, ..., /spl alpha//sub k/ are arbitrary quantities that might be complex numbers, and E[/spl middot/] denotes the s-expected value. Some explicit evaluations are considered for a logistic population. Detailed evaluations of all integer moments of u/sub 1/ and recurrence relations, recurring only on the order of the moments, are given. Connections to survival functions in survival analysis, hazard functions in reliability situations, real type-1, type-2 /spl beta/ and Dirichlet distributions are also examined. Arbitrary product moments for the survival functions are evaluated. Very general results are obtained which can be used in many problems in various areas.     

Wide-stopband microstrip bandpass filters using dissimilar quarter-wavelength stepped-impedance resonators

Wide-stopband and compact microstrip bandpass filters (BPFs) are proposed using various dissimilar quarter-wavelength (/spl lambda//4) stepped-impedance resonators (SIRs) for multiple spurious suppression. The use of /spl lambda//4 SIRs is essential in widening the filter stopband and reducing the circuit size. By properly arranging the individual /spl lambda//4 SIR, which has the same fundamental resonance frequency f/sub 0/, but has different spurious (harmonic) resonance frequencies, and also carefully misaligning the maximum current density nodes, several higher order spurious resonances may be suppressed so that a BPF with wide stopband may be realized. In this study, the basic concept of multiple spurious suppression is demonstrated by thoroughly investigating the spurious characteristics of the fourth-order interdigital BPFs, which consist of two different types of /spl lambda//4 SIRs. To widen the rejection bandwidth, the fourth-order coupled-resonator BPFs based on three and four different types of /spl lambda//4 SIRs are implemented and carefully examined. Specifically, a very wide-stopband microstrip BPF composed of four dissimilar /spl lambda//4 SIRs is realized and its stopband is extended even up to 11.4f/sub 0/ with a rejection level better than 27.5 dB.     

Iron contamination in silicon wafers measured with the pulsed MOS capacitor generation lifetime technique

The pulsed MOS capacitor generation lifetime technique is used to determine the iron density in boron-doped silicon wafers. Effective generation lifetimes (/spl tau//sub g,eff/) are extracted from the Zerbst plots obtained from the measured capacitance-time (C-t) data. Upon thermal heating at 200/spl deg/C for 5 minutes and quenching to 23/spl deg/C, iron-boron (Fe-B) pairs dissociate into interstitial iron (Fe/sub i/) and substitutional boron (B). The post-heated /spl tau//sub g,eff/ decreases immediately after heating. As time elapses (pairing time t/sub p/ increases) after Fe-B dissociation, T/sub g,eff/ increases because Fe/sub i/ reforms into Fe-B pairs. It takes about four times the time constant (i.e., t/sub p//spl ap/4/spl tau/) of Fe-B pairing reaction before the post-heated /spl tau//sub g,eff/ recovers to the pre-heated /spl tau//sub g,eff/. An expression is developed to determine the iron density. The iron density obtained from this expression shows good agreement with that measured by deep-level transient spectroscopy.     

Dissipative Parameters in Ferrites and Insertion Losses in Waveguide Y-Circulators Below Resonance

Extensive microwave loss measurements have been performed at frequencies from 1.3 to 11 GHz on below-resonance waveguide Y circulators loaded with a wide variety of ferrite and garnet compositions. Dissipative internal and external magnetic parameters have been measured on the same compositions. Also, dielectric loss measurements have been carried out. Two classes have been distinguished, defined by the following conditions: /spl omega//sub M/ / /spl omega/ /spl les/0.8 and 0.85 /spl les//spl omega//sub M/ / /spl omega/ /spl les/1.05. It is inferred that the (insertion loss) IL of such devices is independent of /spl Delta/H and mainly depends on the internal dissipative susceptibility x/sub i/" and on the dielectric loss tan /spl delta/. The relation of the IL versus x/sub i/" and tan /spl delta/ in the case /spl omega//sub M/ / /spl omega/ /spl les/0.8 is independent of frequency and given by the semiempirical equation IL= 10 log/sub 10/ (1-2.85 x/sub i/" - 1.60 tan /spl delta/ - 0.017)/sup -1/.     

Arbitrary dual-band components using composite right/left-handed transmission lines

Arbitrary dual-band microstrip components using composite right/left-handed (CRLH) transmission lines (TLs) are presented. Theory, synthesis procedure, and implementation of the dual-band quarter-wave (/spl lambda//4) CRLH TL are presented. Arbitrary dual-band operation is achieved by the frequency offset and the phase slope of the CRLH TL. The frequency ratio of the two operating frequencies can be a noninteger. The dual-band /spl lambda//4 open/short-circuit stub, dual-band branch-line coupler (BLC), and dual-band rat-race coupler (RRC) are also demonstrated. The performances of these dual-band components are demonstrated by both simulated and measured results. Insertion loss is larger than 23 dB for the shunt /spl lambda//4 CRLH TL open-circuit stub and less than 0.25 dB for the shunt /spl lambda//4 CRLH TL short-circuit stub at each passband. The dual-band BLC exhibits S/sub 21/ and S/sub 31/ larger than -4.034 dB, return losses larger than 17 dB, isolations larger than 13 dB, phase differences 90/spl deg//spl plusmn/1.5/spl deg/, and gain imbalance less than 0.5 dB at each passband. The dual-band RRC exhibits S/sub 21/ and S/sub 31/ larger than -4.126 dB, return losses larger than 12 dB, isolations larger than 30 dB, phase difference 180/spl deg//spl plusmn/4/spl deg/, and gain imbalance less than 0.2 dB at each passband.     

High temperature dielectric stability of liquid crystal polymer at mm-wave frequencies

The temperature dependent dielectric stability and transmission line losses of liquid crystal polymer (LCP) are determined from 11-105 GHz. Across this frequency range, LCP's temperature coefficient of dielectric constant, /spl tau//sub /spl epsi/r/, has an average value of -42 ppm//spl deg/C. At 11GHz the /spl tau//sub /spl epsi/r/ is the best (-3 ppm//spl deg/C), but this value degrades slightly with increasing frequency. This /spl tau//sub /spl epsi/r/ average value compares well with the better commercially available microwave substrates. In addition, it includes information for mm-wave frequencies whereas standard values for /spl tau//sub /spl epsi/r/ are usually only given at 10 GHz or below. Transmission line losses on 3- and 5-mil LCP substrates increase by approximately 20% at 75/spl deg/C and 50% or more at 125/spl deg/C. These insertion loss increases can be used as a design guide for LCP circuits expected to be exposed to elevated operating temperatures.     

An Adjustable-Slot-Length UHF Coaxial Coupler with Decade Bandwidth (Correspondence)

A coaxial directional coupler has been developed which allows adjustment of the length of the coupling slot to /spl lambda//4 or 3/spl lambda//4 throughout the frequency range 0.3 to 8.5 GHz. Coupling is flat to within 0.05 dB from 0.3 to 3 GHz (/spl lambda//4 mode) and 0.1 dB from 0.9 to 8.5 GHz (3/spl lambda//4 mode). The coupler has 50-dB coupling, 30- to 40dB directivity and was designed primarily for high power measurement (1 to 1000 W) using a low-power meter on the sidearm. The VSWR for the two modes of operation is 1.02 to 1.05. Five octave bandwidth-type couplers would be required to cover this same frequency range.     

High-responsivity high-gain In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors grown using metal-organic vapor phase epitaxy

We report the growth and fabrication of bound-to-bound In/sub 0.53/Ga/sub 0.47/As-InP quantum-well infrared photodetectors using metal-organic vapor phase epitaxy. These detectors have a peak detection wavelength of 8.5 /spl mu/m. The peak responsivities are extremely large with R/sub pk/=6.9 A/W at bias voltage V/sub b/=3.4 V and temperature T=10 K. These large responsivities arise from large detector gain that was found to be g/sub n/=82 at V/sub b/=3.8 V from dark current noise measurements at T=77 K and g/sub p/=18.4 at V/sub b/=3.4 V from photoresponse data at T=10 K. The background-limited temperature with F/1.2 optics is T/sub BLIP/=65 K for 0相似文献   

Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

A 1.5-W continuous-wave power output in a beam pattern of 3/spl deg/ is obtained from a new designed rhombus-like stripe strained quantum-well diode laser (/spl lambda/=980 nm) with a 150-/spl mu/m-wide emission aperture grown by molecular beam epitaxy. The /spl eta//sub d/ is as high as 78%, and the maximum output power by the new stripe laser is 5.0 W for antireflection/high-reflection coated devices.