移动AdHoc网络的单信道媒体接入协议

AdHoc网络中的信道接入是一个比较复杂的问题，单信道接入协议是目前AdHoc网络中应用最广泛的，介绍了AdHoc网络中MAC协议需要解决的主要问题和设计要求，并列举分析了几种典型的基于CSMA／CA的由原端发起的单信道接入协议。最后总结了在MAC协议中常用的退避算法：二进制退避算法（BEB）和倍数增线性减算法（MILD），指出其中存在的问题。     

WCDMA系统移动核心网络协议栈的测试

在WCDMA系统中，为了使得来自不同厂家的设备能够成功地进行通信，必须有标准化的协议，但是实现对于协议的不同理解，导致了不同厂家设备的协议实现是不一致的。所以解决设备协议的非一致性问题将成为整个系统演进过程中一个不可忽略的因素。为了解决这个问题，协议一致性测试应运而生。下面首先简单介绍协议一致性测试原理，WCDMA系统核心网络协议，然后对我们在WCDMA系统核心网络协议测试中采用的测试方法和测试系统结构、得到的测试结果进行分析。     

无线数据通信网中的信道接入协议研究

信道接入协议（MAC）是无线数据通信协议的重要组成部分。由于无线信道是一个开放、共享的信道，网络节点在通信过程中存在隐终端和暴露终端问题。基于目前无线通信常用的MAC协议存在的问题，着重分析了基于扩频码的信道接入协议，该协议利用扩频码的正变特性，使得网络中各节点可以同时占用信道而互不干扰，较好地解决了信道争用问题，提高了系统效率。同时指出，在选择MAC协议时，应根据无线网络的拓扑结构及特点灵活选择，以提高网络性能。     

移动Ad hoc网络的单信道媒体接入协议

Ad hoc网络中的信道接入是一个比较复杂的问题，单信道接入协议是目前Ad hoc网络中应用最广泛的，本文介绍了Ad hoc网络中MAC协议需要解决的主要问题和设计要求，并列举分析了几种典型的基于CSMA／CA的由原端发起的单信道接入协议。最后总结了在MAC协议中常用的退避算法：二进制退避算法（BEB）和倍数增线性减算法（MILD），指出其中存在的问题。     

基于S-CDMA的HFC网上行信道接入协议

本文着重讨论了一个基于S-CDMA的HFC网上行信道的高效的接入协议--SAMA接入协议，其中包括了请求冲突解决协议和初始化协议两部分，并对这个接入协议的冲突率和吞吐量性能进行了详细分析，最后提出了该接入技术中尚待解决的问题。     

Ad hoc网络技术讲座第2讲 Ad hoc网络中的路由选择问题

本文介绍了Ad hoc网络中路由选择问题的特点，并从路由的驱动机制方面介绍了主动式路由协议和按需式路由协议，从网络的拓扑结构方面介绍了平面式路由协议和分簇式路由协议，最后给出了这几类路由协议的性能比较。     

移动Ad Hoc网中的定向信道接入协议

为了提高移动Ad Hoc网信道利用率和吞吐量、克服隐藏终端问题，使用定向天线的信道接入(MAC)协议已被提出。本文介绍了基于移动Ad Hoc网的定向MAC协议，分类描述了四种定向MAC协议(全向RTS-全向CTS协议、定向RTS-全向CTS协议、定向RTS一定向CTS协议以及多跳RTS协议)，比较分析了其特点并指出了现有协议中存在的一些问题及今后可能的研究方向。     

可证明安全的异构无线网络认证协议

异构无线网络中互连的安全问题是当前研究的关注点，针对3G网络和WLAN（无线局域网）所构成的异构互连网络中认证协议的安全和效率问题，提出了一种基于离线计费方法的认证协议。该协议通过对WLAN服务网络身份进行验证，抵御了重定向攻击的行为；采用局部化重认证过程，减少了认证消息的传输延时，提高了认证协议的效率。仿真结果表明，该协议的平均消息传输延时相对于EAP—AKA协议缩短了大约一半。通过Canetti—Krawczyk（CK）安全模型对新协议进行了安全性证明，证明该协议具有SK—secure安全属性。     

IEEE802．11g协议中一些问题的分析与研究

本文简要介绍了IEEE802．11协议族标准的发展过程，重点分析了IEEE802．11g协议标准。对IEEE802．11g协议中可能出现的一些问题进行分析和研究，并针对这些问题给出了相应的解决方法。     

SIGTRAN在3G核心网中的应用

SIGTRAN是IETF提出的在IP网上传输七号信令的协议簇，SCTP和M3UA是该协议簇中的两个协议。简要介绍了SCTP和M3UA的特点，就其在第三代移动通信核心网的应用中存在的若干问题进行了分析和讨论，并对如何解决这些问题提出了一些看法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.