移动通信系统中基站天线波束赋形设计

摘 要：基站天线的波束赋形设计是提高移动通信系统信道性能的有效手段之一。本文基于移动通信系统，建立了基站天线赋形的优化模型，给出求解具有多个复杂约束条件的乘子罚函数的迭代算法。以八单元线阵为例，设计出压低上半空间所有副瓣峰值，填充下半空间零陷的基站天线，验证了本文方法的正确性和有效性。该方法对于波束赋形问题具有一定的借鉴意义。     

基于遗传算法的基站天线波束赋形设计

天线阵列俯仰面方向图的赋形设计在整个基站天线设计过程中是一项关键的技术。考虑互耦以及反射板影响的实际天线阵列,选择阵列中每个天线单元的馈电幅度和相位作为优化变量,采用遗传优化算法对天线阵列垂直面方向图的下半空间零陷填充和上半空间副瓣抑制等指标进行优化,结果满足要求,具有较强的实用性。     

一种具有雷电防护功能的高增益垂直极化全向赋形天线设计

设计了一种具有雷电防护功能的大功率高增益垂直极化全向赋形天线.天线采用印刷偶极子作为辐射单元,通过4个单元俯仰组阵满足天线高增益要求.采用遗传算法优化阵元幅度和相位,实现天线俯仰波束赋形设计.通过功分器对均匀分布的4组赋形子阵列等幅同相馈电,实现天线方向图方位面全向覆盖.避雷针穿过天线印制板安装架安装于天线底座中心起雷...     

电视天线垂直面方向性图的赋形设计

本文从电视发射天线的等场强电平覆盖和“电磁兼容”的要求出发,提出了一种利用计算机优化对天线阵列进行垂直面方向性图赋形设计的方法。通过控制天线阵列各单元的电流幅度与相位以及单元之间的距离,使之满足各种特殊的要求。所编制的计算机程序具有一定的通用性。文中给出了设计的实例。     

基于GA 与PIM 混合方法的基站天线波束赋形设计

基站天线的波束赋形设计是提高移动通信系统信道性能的关键技术之一。将投影迭代法和遗传算法应用到板状振子型基站天线的计算中,实现基站天线的快速优化设计。首先把振子形式假设为条带形状,对振子和底板均采用RWG基函数展开,得到传统矩量法的矩阵方程,然后通过投影迭代逐步修正未知电流,进而求得天线的远场方向图与天线尺寸的关系,最后与遗传算法相结合,优化设计了斜极化基站天线的波束赋形。实验结果与设计结果相吻合,证明了该方法的实用性。     

基于粒子群算法的天线阵方向图优化

雷达阵列天线常涉及方向图综合,而天线阵综合常常是利用优化算法优化单元幅相及间距等参数的过程。粒子群算法具有理论简单、参数少和易于实现等特点,文中基于这一简单易行的优化算法,给出一种阵列天线赋形波束综合方法。通过优化阵列天线中各单元的馈电幅度和相位同时实现主瓣的赋形和副瓣电平的抑制,或通过仅相位加权实现主瓣波束赋形,得到优良的余割平方赋形。通过实例设计验证了粒子群算法优化天线阵方向图的有效性。     

5G移动通信特殊成形基站天线设计

针对5G大范围覆盖的应用场景进行了设计探讨,提出通过对基站天线垂直面进行余割平方成形、以保证大范围覆盖应用场景下信号的均匀性的方法。首先通过算法推导,证明余割平方成形的功率辐射波束可满足5G信号均匀覆盖的要求;其次,采用约束最优化方法,把天线的方向性系数作为目标函数,把指定区域的波束电平作为约束函数,求解基站天线辐射单元的权值,得到满足余割平方成形的辐射方向图。在MATLAB环境下开发了实现此算法的程序。本文的创新之处在于用实际的单元方向图和约束最优化方法,在保证天线增益最优的前提下,综合出需要线阵列天线方向图。引入仰角单元与其他正常单元一起综合方向图,解决顶盲问题,是这个方法的一个应用实例。最后,仿真验证该方法,并设置场景对应用余割平方成形的天线与常规天线的信号覆盖进行比较,证明该方法对信号均匀性有极大的改善。     

移动通信基站双极化智能天线扇区功率比*

根据移动通信基站天线广播波束要求,构建了基站双极化智能天线阵的空间三维方向图函数.由此,计算了工作频段内基站天线不同水平面半功率波瓣宽度、不同前后比、不同垂直面电下倾和机械下倾角时,基站天线的扇区功率比和增益.结果表明,基站天线水平面半功率波瓣宽度和前后比是影响扇区功率比的决定因素;基站天线垂直面机械下倾的扇区功率比优于电下倾的扇区功率比.     

基于结构复用的双频圆极化共口径天线设计

提出了一款低剖面宽波束高口径利用率的双频圆极化共口径天线。天线采用结构复用的设计理念,规划拓扑布局,设计不同类型的天线单元。上层采用微带环形贴片使其工作在无人机数据传输频段(1430－1444 MHz),下层采用微带圆形贴片使其工作在无人机遥控频段(2408－2440 MHz)。环形贴片既是低频辐射器,同时也作为高频引向器进行波束调控,实现宽波束特性。仿真和测试结果表明,该天线具有良好的阻抗匹配和圆极化特性,阻抗和轴比带宽均覆盖了无人机通信系统的两个工作频段,同时天线的剖面高度仅为0.07λ0。因此,实现了结构紧凑、性能可控的宽波束双频圆极化共口径天线,在无人机通信系统中具有潜在的应用价值。     

CDMA系统下行波束赋形算法

未来的移动通信业务需求将导致下行容量远大于上行容量。在基站端采用智能天线下行波束赋形技术可以解决这一问题。本文系统分析了CDMA系统下行波束赋形的两个主要技术难点,即下行信道协方差矩阵的估计和下行波束赋形算法．并简要介绍了几种下行波束赋形算法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.