Influence of polymeric residue on the thermal conductivity of suspended bilayer graphene

The thermal conductivity (κ) of two bilayer graphene samples each suspended between two microresistance thermometers was measured to be 620 ± 80 and 560 ± 70 W m(-1) K(-1) at room temperature and exhibits a κ ∝ T(1.5) behavior at temperatures (T) between 50 and 125 K. The lower κ than that calculated for suspended graphene along with the temperature dependence is attributed to scattering of phonons in the bilayer graphene by a residual polymeric layer that was clearly observed by transmission electron microscopy.     

The characterization of a cascade thermoelectric cooler in a cryosurgery device

An experimental investigation using a Peltier thermoelectric cooler (TEC) to cool down a cryoprobe for cryosurgery was performed. Two prototypes of cryosurgery devices consisting of 5- and 6-stage TEC modules were analyzed using a variety of electrical voltages, circulating thermostatic bath (CTB) temperatures, and heat exchanger configurations to obtain an optimum cold side temperature and temperature differences between sides of the modules. To increase the heat exchanges at the hot side, a heat pipe system with a water block was used. Using an electric voltage of 12 V and a CTB temperature of 273.55 K, a cryogenic temperature of 177.09 K and a temperature difference of 99.87 K were achieved. These results indicate that the TEC module can be an effective cooling source for cryosurgery. The prototype has shown potential for clinical trials.     

K2O对LZAS微晶玻璃微观结构及热膨胀性能的影响

采用DTA、XRD、SEM、TEC(热膨胀系数)等分析手段研究了加入K2O前后LZAS系统微晶玻璃的微观结构和热膨胀性能.结果表明,650℃晶化时,试样析出γⅡ-LZS和方石英晶体;725℃时,γⅡ-LZS逐渐转变为γ0-LZS晶体,并且出现β-石英固溶体;800℃时,β-石英固溶体转变为β-锂辉石固溶体,晶粒尺寸逐渐长大.制得微晶玻璃的热膨胀系数在(50～130)×10-7℃-1(20～500℃)之间,其大小取决于晶相的种类和含量.并且K2O的加入降低了玻璃的转变温度、粘度,抑制了玻璃的析晶倾向,增大了微晶玻璃的热膨胀系数.     

Transport in nanoribbon interconnects obtained from graphene grown by chemical vapor deposition

We study graphene nanoribbon (GNR) interconnects obtained from graphene grown by chemical vapor deposition (CVD). We report low- and high-field electrical measurements over a wide temperature range, from 1.7 to 900 K. Room temperature mobilities range from 100 to 500 cm(2)·V(-1)·s(-1), comparable to GNRs from exfoliated graphene, suggesting that bulk defects or grain boundaries play little role in devices smaller than the CVD graphene crystallite size. At high-field, peak current densities are limited by Joule heating, but a small amount of thermal engineering allows us to reach ～2 × 10(9) A/cm(2), the highest reported for nanoscale CVD graphene interconnects. At temperatures below ～5 K, short GNRs act as quantum dots with dimensions comparable to their lengths, highlighting the role of metal contacts in limiting transport. Our study illustrates opportunities for CVD-grown GNRs, while revealing variability and contacts as remaining future challenges.     

Graphene bimetallic-like cantilevers: probing graphene/substrate interactions

The remarkable mechanical properties of graphene, the thinnest, lightest, and strongest material in existence, are desirable in applications ranging from composite materials to sensors and actuators. Here, we demonstrate that these mechanical properties are strongly affected by the interaction with the substrate onto which graphene is deposited. By measuring the temperature-dependent deflection of graphene/substrate "bimetallic" cantilevers we determine strain, thermal expansion coefficient, and the adhesion force acting on graphene films attached to a substrate. Graphene deposited on silicon nitride (SiN(x)) is under much larger strain, ε(g) ～ 1.5 × 10(-2), compared to graphene on gold (Au), ε(g) < 10(-3). The thermal expansion coefficient α(g) of graphene attached to SiN(x) is found to be negative, in the range from (- 5... - 1) × 10(-6)K(-1) and smaller in magnitude than α(g) of suspended graphene. We also estimate the interfacial shear strength of the graphene/SiN(x) interface to be ～1 GPa at room temperature.     

热电制冷强化风冷散热模块的工作特性分析

热电制冷器(TEC)可以强化散热器冷却性能,但受热端散热强度、工作电流、工作热负荷等参数影响较大。本文建立了TEC强化风冷散热模块的有限元分析模型,对其温度分布、工作特性进行了系统的理论和实验研究,并提出了确定TEC强化风冷散热模块有效工作电流、有效热负荷和有效制冷系数范围的方法。仿真和实验结果表明:特定的TEC强化风冷散热模块存在一个极限热负荷Q_c,max,仅在工作热负荷Q_cc,max,且TEC工作电流处在有效范围内时,才可获得比无TEC的风冷散热模块更低的芯片结温,即TEC表现出强化散热器冷却性能的特点;有效工作电流范围会随Qc的增大而减小;增大热端散热强度可以降低芯片结温,但对于提升Q_c,max效果较小;制冷系数(COP)在有效范围内存在一个极值点,小于此值时芯片结温会随COP的减小而迅速增大。     

Heat conduction across monolayer and few-layer graphenes

We report the thermal conductance G of Au/Ti/graphene/SiO(2) interfaces (graphene layers 1 ≤ n ≤ 10) typical of graphene transistor contacts. We find G ≈ 25 MW m(-2) K(-1) at room temperature, four times smaller than the thermal conductance of a Au/Ti/SiO(2) interface, even when n = 1. We attribute this reduction to the thermal resistance of Au/Ti/graphene and graphene/SiO(2) interfaces acting in series. The temperature dependence of G from 50 ≤ T ≤ 500 K also indicates that heat is predominantly carried by phonons through these interfaces. Our findings suggest that metal contacts can limit not only electrical transport but also thermal dissipation from submicrometer graphene devices.     

Spin valve effect of NiFe/graphene/NiFe junctions

When spins are injected through graphene layers from a transition metal ferromagnet, high spin polarization can be achieved. When detected by another ferromagnet, the spin-polarized current makes high- and low-resistance states in a ferromagnet/graphene/ferromagnet junction. Here, we report manifest spin valve effects from room temperature to 10 K in junctions comprising NiFe electrodes and an interlayer made of double-layer or single-layer graphene grown by chemical vapor deposition. We have found that the spin valve effect is stronger with double-layer graphene than with single-layer graphene. The ratio of relative magnetoresistance increases from 0.09% at room temperature to 0.14% at 10 K for single-layer graphene and from 0.27% at room temperature to 0.48% at 10 K for double-layer graphene. The spin valve effect is perceived to retain the spin-polarized transport in the vertical direction and the hysteretic nature of magnetoresistance provides the basic functionality of a memory device. We have also found that the junction resistance decreases monotonically as temperature is lowered and the current-voltage characteristics show linear behaviour. These results revealed that a graphene interlayer works not as a tunnel barrier but rather as a conducting thin film between two NiFe electrodes.      

Temperature Dependence of Electrical Resistance of Graphene Oxide

High Temperature - The temperature dependence of the electrical resistance of graphene oxide upon continuous heating and cooling under argon in the temperature range of 300–550 K and the...     

Effect of the Substrate on Phonon Properties of Graphene Estimated by Raman Spectroscopy

Low-temperature Raman studies of supported graphene are presented. A linear temperature dependence of 2D peak linewidths was observed with the coefficients of 0.036 and 0.033 cm\(^{-1}\)/K for graphene on copper and glass substrates, respectively, while G peak linewidths remained unchanged throughout the whole temperature range. The different values observed for graphene on glass and copper substrates were explained in terms of the substrate effect on phonon–phonon and electron–phonon interaction properties of the material. The results of the present study can be used to consider substrate effects on phonon transport in graphene for nanoelectronic device engineering.     

Bottom-gated epitaxial graphene

High-quality epitaxial graphene on silicon carbide (SiC) is today available in wafer size. Similar to exfoliated graphene, its charge carriers are governed by the Dirac-Weyl Hamiltonian and it shows excellent mobilities. For many experiments with graphene, in particular for surface science, a bottom gate is desirable. Commonly, exfoliated graphene flakes are placed on an oxidized silicon wafer that readily provides a bottom gate. However, this cannot be applied to epitaxial graphene as the SiC provides the source material out of which graphene grows. Here, we present a reliable scheme for the fabrication of bottom-gated epitaxial graphene devices, which is based on nitrogen (N) implantation into a SiC wafer and subsequent graphene growth. We demonstrate working devices in a broad temperature range from 6 to 300 K. Two gating regimes can be addressed, which opens a wide engineering space for tailored devices by controlling the doping of the gate structure.     

FePt/reduced graphene oxide composites for high capacity hydrogen storage

Here, reduced graphene oxide (rGO) was modified with iron and platinum nanoparticles by solvothermal method. The structural order and textural properties of the graphene based materials were studied by BET, TEM, XRD, TGA and XPS techniques. Hydrogen storage properties of GO, platinum loaded reduced graphene oxide (Pt-rGO), iron loaded reduced graphene oxide (Fe-rGO), and iron platinum loaded reduced graphene oxide (FePt-rGO) have been investigated in the pressure range of 0.05 to atmospheric pressure and at 77 and 87 K. This gives hydrogen adsorption capacities of about 1.2, 2.1, 1.9, and 2.7 wt% at 77 K for GO, Pt-rGO, Fe-rGO, and FePt-rGO, respectively. The isosteric heat of adsorption (Q_st) was investigated as a function of hydrogen uptake at 77 and 87 K over the pressure range of 0.05 to atmospheric pressure. The isosteric heat of adsorption for FePt-rGO (9.2 kJ/mol) was found to be higher than the isosteric heat of adsorption for GO (6.1 kJ/mol) indicating a favorable interaction between hydrogen and surface of the reduced graphene oxide.     

Superior thermal conductivity of single-layer graphene

We report the measurement of the thermal conductivity of a suspended single-layer graphene. The room temperature values of the thermal conductivity in the range approximately (4.84+/-0.44)x10(3) to (5.30+/-0.48)x10(3) W/mK were extracted for a single-layer graphene from the dependence of the Raman G peak frequency on the excitation laser power and independently measured G peak temperature coefficient. The extremely high value of the thermal conductivity suggests that graphene can outperform carbon nanotubes in heat conduction. The superb thermal conduction property of graphene is beneficial for the proposed electronic applications and establishes graphene as an excellent material for thermal management.     

Intercalation of iridium atoms into a graphene layer on a metal

The intercalation of iridium atoms into a graphene (two-dimensional graphite) layer on a metal substrate (iridium (111) crystal face) has been studied. It is established that a thin film of iridium deposited at room temperature onto the graphene surface in a vacuum is completely destroyed on heating to 1000–1200 K and iridium atoms pass to an intercalated state between the graphene layer and the substrate. Vacuum deposition of iridium directly onto a heated sample of graphene/Ir(111) at 1000–1500 K leads to the accumulation of Ir atoms only in the intercalated state, while the outer surface of graphene remains free of the adsorbate.     

Computer simulation of the thermal stability of nickel films on two-layer graphene

The structure and the dynamic and mechanical properties of monolayer nickel films deposited on two-layer graphene are studied in the temperature range 300 < T < 3300 K by the molecular-dynamics method. A part of the Ni atoms remains on the graphene sheet even at T = 3300 K for both one- and two-sided coatings. The radial distribution functions of the upper and lower metal films differ significantly even at T = 300 K. The temperature dependence of the horizontal and vertical components of the self-diffusion coefficient of a one-sided nickel film exhibits a jump above 1800 K. No similar specific feature was observed for a two-sided coating of graphene with this film. The stress components acting in the nickel-film plane disappear with an increase in temperature for a shorter time in the case of one-sided coating.     

Thermal conductivity of isotopically modified graphene

In addition to its exotic electronic properties graphene exhibits unusually high intrinsic thermal conductivity. The physics of phonons--the main heat carriers in graphene--has been shown to be substantially different in two-dimensional (2D) crystals, such as graphene, from in three-dimensional (3D) graphite. Here, we report our experimental study of the isotope effects on the thermal properties of graphene. Isotopically modified graphene containing various percentages of 13C were synthesized by chemical vapour deposition (CVD). The regions of different isotopic compositions were parts of the same graphene sheet to ensure uniformity in material parameters. The thermal conductivity, K, of isotopically pure 12C (0.01% 13C) graphene determined by the optothermal Raman technique, was higher than 4,000?W?mK(-1) at the measured temperature T(m)~320?K, and more than a factor of two higher than the value of K in graphene sheets composed of a 50:50 mixture of 12C and 13C. The experimental data agree well with our molecular dynamics (MD) simulations, corrected for the long-wavelength phonon contributions by means of the Klemens model. The experimental results are expected to stimulate further studies aimed at a better understanding of thermal phenomena in 2D crystals.     

The Thermal and Elastic Properties of Zinc Oxide-Based Ceramics at High Temperatures

The thermal conductivity, thermal expansion coefficient (TEC), and the propagation velocity of longitudinal and transverse ultrasonic waves in ZnO-based ceramics are investigated in the temperature range from 300 to 1200 K with a porosity from 1.5 to 21%. The Young, shear, and bulk moduli and the Poisson ratio are calculated from the data on the propagation velocities of ultrasonic waves. Formulas are suggested to calculate the investigated parameters as a function of temperature and porosity.     

温度对堆叠双层石墨烯层间耦合的影响

将不同层数堆叠和化学气相沉积法（CVD）生长的石墨烯在室温下进行拉曼光谱表征分析其层间耦合状态,并分析了不同温度下堆叠和CVD生长的双层石墨烯温度对其层间耦合的影响。研究结果表明:室温下CVD生长双层石墨烯和堆叠双层石墨烯的层间耦合状态截然不同;在25～250 ℃范围内,层间没有耦合作用或存在弱耦合作用的堆叠双层石墨烯的G峰峰位温度系数小于存在电子耦合的CVD生长双层石墨烯;超过250 ℃后,堆叠双层石墨烯G峰峰位温度系数变为正值,层与层之间可能产生了耦合,性质发生改变;在25～400 ℃ 范围内两种材料的2D峰半峰宽和G峰/2D峰强度比变化趋势几乎相同,但堆叠双层石墨烯波动大,对温度更敏感。     

Scalable templated growth of graphene nanoribbons on SiC

In spite of its excellent electronic properties, the use of graphene in field-effect transistors is not practical at room temperature without modification of its intrinsically semimetallic nature to introduce a bandgap. Quantum confinement effects can create a bandgap in graphene nanoribbons, but existing nanoribbon fabrication methods are slow and often produce disordered edges that compromise electronic properties. Here, we demonstrate the self-organized growth of graphene nanoribbons on a templated silicon carbide substrate prepared using scalable photolithography and microelectronics processing. Direct nanoribbon growth avoids the need for damaging post-processing. Raman spectroscopy, high-resolution transmission electron microscopy and electrostatic force microscopy confirm that nanoribbons as narrow as 40 nm can be grown at specified positions on the substrate. Our prototype graphene devices exhibit quantum confinement at low temperatures (4 K), and an on-off ratio of 10 and carrier mobilities up to 2,700 cm(2) V(-1) s(-1) at room temperature. We demonstrate the scalability of this approach by fabricating 10,000 top-gated graphene transistors on a 0.24-cm(2) SiC chip, which is the largest density of graphene devices reported to date.     

Numerical simulation of heating an aluminum film on two-layer graphene

The behavior of a monolayer aluminum film on two-layer graphene upon heating from 300 to 3300 K was studied by the molecular dynamics method. A stretched film is nonuniformly contracted with an increase in temperature. Aluminum atoms remain on graphene even at 3300 K. Heating reduces stresses in the film plane. Upon heating to 3000 K, the long-range order in graphene is transformed into the mid-range one. The increase in the intensity of vertical displacements of C atoms in one graphene sheet (caused by an increase in temperature) generally reduces the corresponding intensity in the other sheet, whereas the horizontal components of mobility, with few exceptions, behave similarly. Upon heating, stresses in the upper graphene sheet decrease with different rates for different directions.