Impact of the substrate dependent polarity distribution in c-axis oriented AlN thin films on the etching behaviour and the piezoelectric properties

In this work, the influence of substrate properties on the polarization of highly c-axis oriented aluminium nitride (AlN) thin films and as a consequence, on the piezoelectric properties and the wet-chemical etching behaviour is investigated. Therefore, 620 nm thin AlN layers are simultaneously sputter-deposited under nominal unheated substrate conditions on silicon (Si) substrates or on those covered with a sputter-deposited titanium (Ti) film. After wet-chemically etching in a phosphorous acid based solution at 80 °C different residues of AlN remain. Wet-chemical etching of AlN films deposited on Ti results in a high film porosity. In contrast, AlN layers on Si are either hardly attacked or the complete thin film is removed except some remaining conical shaped residues. Furthermore, we demonstrate a change in the measured electro-mechanical properties with changing maximum deposition temperature caused by a self-heating effect of the substrate during the AlN deposition process. The change in piezoelectric properties and the differing etching behaviour is caused by a change in polarity within the AlN layer. These domains are visualized by piezoresponse force microscopy measurements, and are in good agreement with the observed etching results. For layers with mixed polarization, the absolute values of the piezoelectric constant d ₃₃ are reduced due to the counteraction of piezoelectric domains with opposite polarization.     

Star reduction among minimal length addition chains

An addition chain for a natural number n is a sequence \({1=a_0 < a_1 < \cdots < a_r=n}\) of numbers such that for each 0 < i ≤ r, a _i  = a _j  + a _k for some 0 ≤ k ≤ j < i. The minimal length of an addition chain for n is denoted by ?(n). If j = i ? 1, then step i is called a star step. We show that there is a minimal length addition chain for n such that the last four steps are stars. Then we conjecture that there is a minimal length addition chain for n such that the last \({\lfloor\frac{\ell(n)}{2}\rfloor}\)-steps are stars. We verify that the conjecture is true for all numbers up to 2¹⁸. An application of the result and the conjecture to generate a minimal length addition chain reduce the average CPU time by 23–29% and 38–58% respectively, and memory storage by 16–18% and 26–45% respectively for m-bit numbers with 14 ≤ m ≤ 22.     

Development of novel PZT thin films for active sliders based on head load/unload on demand systems

 Micromachined active sliders based on head load/unload on demand systems is an interesting concept technology for ultra-high magnetic recording density of more than 100 Gb/in². The active sliders that we proposed use PZT thin films as a microactuator and control the slider flying height of less than 10 nm. It is necessary to develop high performance microactuators in order to achieve active sliders operating at very low applied voltage. This paper describes the development of novel PZT thin films for active sliders. The sol–gel fabrication process for PZT thin films is developed and the fundamental characteristics for the PZT thin films are investigated. It is confirmed that the PZT thin films have good ferroelectric properties. Furthermore, novel thin film microactuators are proposed. The feature is that the sol–gel PZT thin films (thickness 540 nm) are deposited on the sputtered PZT thin films (thickness 300 nm) fabricated on bottom Pt/Ti electrodes. Therefore, the novel thin films consist of a thermal SiO₂ layer and the sputtered and sol–gel PZT thin films layers sandwiched with upper Pt and bottom Pt/Ti electrodes on a Si slider material. Fabricating the diaphragm microactuator, the piezoelectric properties for the novel composite PZT thin films are studied. As a result, the piezoelectric strain constant d ₃₁ for the novel PZT thin films is identified to be 130 × 10⁻¹² m/V. This value is higher than conventional monolithic PZT thin films and it is found that the novel composite PZT thin films have the good piezoelectric properties. This suggests the feasibility of realizing active sliders operating at lower voltage under about 10 V. Received: 22 June 2001/Accepted: 17 October 2001     

An orthogonal analysis method for decoupling the nozzle geometrical parameters of microthrusters

This paper proposes an orthogonal analysis method for decoupling the multiple nozzle geometrical parameters of microthrusters, thus an reconfigured design can be implemented to generate a proper thrust. In this method, the effects of various nozzle geometrical parameters, including throat width W _t , half convergence angle θ _in , half divergence angle θ _out , exit-to-throat section ratio W _e /W _t and throat radius of the curvature R _t /W _t , on the performance of microthrusters are sorted by range analysis. Analysis results show that throat width seriously affects thrust because range value of 67.53 mN is extremely larger than the range value of other geometry parameters. For average specific impulse (ASI), the range value of exit-to-throat section ratio W _e /W _t and half divergence angle θ _out are 4.82 s and 3.72 s, respectively. Half convergence angle with the range value of 0.39 s and throat radius with 0.32 s have less influence on ASI compared with exit-to-throat section ratio and half divergence angle. When increasing the half convergence angle from 10° to 40° and throat radius of the curvature from 3 to 9, average specific impulse initially decreases and then increases. A MEMS solid propellant thruster (MSPT) with the reconfigured geometrical parameters of nozzle is fabricated to verify the feasibility of the proposed method. The thrust of the microthruster can reach 25 mN. Power is estimated to be 0.84 W. This work provides design guideline to reasonably configure geometry parameters of microthruster.     

Filtration of aerosol particles by cylindrical fibers within a parallel and staggered array

The World Health Organization (WHO) in 2013 reported that more than seven million unexpected losses every year are credited to air contamination. Because of incredible adaptability and expense viability of fibrous filters, they are broadly used for removing particulates from gasses. The influence of appropriate parameters, e.g., the fiber arrangement, solid volume fraction (SVF or α), fluid flow face velocity (mean inlet velocity), and filter thickness (I _x ), on pressure drop and deposition efficiency are researched. Furthermore, to study the effects of variation of the laminar flow regime and fiber’s cross-sectional shape on the deposition of particles, only a single square fiber has been placed in a channel. By means of finite volume method (FVM), the 2-D motion of 100–1000 nm particles was investigated numerically. The Lagrangian method has been employed and the Saffman’s lift, Drag, and Brownian forces have been considered to affect this motion. Contribution of increasing the Reynolds number to filtration performance increased with smaller fine aerosols to a level of 59.72 %. However, for over 500 nm, the Re = 100 has more efficient results up to 26.97 %. Remarkably, the single square fiber in Re = 200 regime performs similarly to the optimum choice of multi-fibrous filters. It was portrayed the parallel circular multi-fibrous filter with a ratio of horizontal-to-vertical distances between fibers, l/h = 1.143; α = 0.687, I _x  = 116.572, and h/d _f  = 1.0 is the most efficient filter’s structure. The increase in the ratio of vertical distances between fibers-to-fiber’s diameter (h/d _f ) and decrease in SVF or α, results in a drastically decrement of the filtration performance of both parallel and staggered structures. The obtained results have been validated with previous research findings.     

Study on TSV isolation liners for a Via Last approach with the use in 3D-WLP for MEMS

This paper discusses approaches for the isolation of deep high aspect ratio through silicon vias (TSV) with respect to a Via Last approach for micro-electro-mechanical systems (MEMS). Selected TSV samples have depths in the range of 170…270 µm and a diameter of 50 µm. The investigations comprise the deposition of different layer stacks by means of subatmospheric and plasma enhanced chemical vapour deposition (PECVD) of tetraethyl orthosilicate; Si(OC₂H₅)₄ (TEOS). Moreover, an etch-back approach and the selective deposition on SiN were also included in the investigations. With respect to the Via Last approach, the contact opening at the TSV bottom by means of a specific spacer-etching method have been addressed within this paper. Step coverage values of up to 74 % were achieved for the best of those approaches. As an alternative to the SiO₂-isolation liners a polymer coating based on the CVD of Parylene F was investigated, which yields even higher step coverage in the range of 80 % at the lower TSV sidewall for a surface film thickness of about 1000 nm. Leakage current measurements were performed and values below 0.1 nA/cm² at 10 kV/cm were determined for the Parylene F films which represents a promising result for the aspired application to Via Last MEMS-TSV.     

Properties of Sc<Subscript>x</Subscript>Al<Subscript>1-x</Subscript>N (x = 0.27) thin films on sapphire and silicon substrates upon high temperature loading

Scandium Aluminum Nitride thin films (Sc_xAl_1-xN) are attracting more and more attention for micro-electromechanical systems (MEMS) because of significantly increased piezoelectric constants compared to pure AlN. This work provides a comprehensive study of thermal annealing effects on Sc_xAl_1-xN (x = 27 %) films synthesized via DC magnetron sputter deposition at nominally unheated Silicon and Sapphire substrates. Compared to the “as deposited” state increasing c-axis orientation and crystalline quality upon annealing up to 1000 °C of films with mixed crystallographic orientation is observed via X-ray diffraction and transmission electron microscopy based analyses. Also the piezoelectric coefficient d ₃₃ of Sc_xAl_1-xN on Si shows increasing values at enhanced annealing temperatures. However, the improved piezoelectric properties are accompanied by both increased leakage currents and loss tangent values.     

Negation-Limited Complexity of Parity and Inverters

In negation-limited complexity, one considers circuits with a limited number of NOT gates, being motivated by the gap in our understanding of monotone versus general circuit complexity, and hoping to better understand the power of NOT gates. We give improved lower bounds for the size (the number of AND/OR/NOT) of negation-limited circuits computing Parity and for the size of negation-limited inverters. An inverter is a circuit with inputs x ₁,…,x _n and outputs ¬ x ₁,…,¬ x _n . We show that: (a) for n=2 ^r ?1, circuits computing Parity with r?1 NOT gates have size at least 6n?log?₂(n+1)?O(1), and (b) for n=2 ^r ?1, inverters with r NOT gates have size at least 8n?log?₂(n+1)?O(1). We derive our bounds above by considering the minimum size of a circuit with at most r NOT gates that computes Parity for sorted inputs x ₁≥???≥x _n . For an arbitrary r, we completely determine the minimum size. It is 2n?r?2 for odd n and 2n?r?1 for even n for ?log?₂(n+1)??1≤r≤n/2, and it is ?3n/2??1 for r≥n/2. We also determine the minimum size of an inverter for sorted inputs with at most r NOT gates. It is 4n?3r for ?log?₂(n+1)?≤r≤n. In particular, the negation-limited inverter for sorted inputs due to Fischer, which is a core component in all the known constructions of negation-limited inverters, is shown to have the minimum possible size. Our fairly simple lower bound proofs use gate elimination arguments in a somewhat novel way.     

Generation and distillation of non-Gaussian entanglement from nonclassical photon statistics

With a product state of the form \({{\rho}_{\rm in} = {\rho}_{a} \otimes |0 \rangle_b {_b} \langle 0|}\) as input to a beam splitter, the output two-mode state ρ _out is shown to be negative under partial transpose (NPT) whenever the photon number distribution (PND) statistics { p(n _a ) } associated with the possibly mixed state ρ _a of the input a-mode is antibunched or otherwise nonclassical, i.e., whenever { p(n _a ) } fails to respect any one of an infinite sequence of necessary and sufficient classicality conditions. Negativity under partial transpose turns out to be a necessary and sufficient test for entanglement of ρ _out which is generically non-Gaussian. The output of a PND distribution is further shown to be distillable if any one of an infinite sequence of three term classicality conditions is violated.     

Effects of topological changes in microchannel geometries on the asymmetric breakup of a droplet

Passive asymmetric breakups of a droplet could be done in many microchannels of various geometries. In order to study the effects of different geometries on the asymmetric breakup of a droplet, four types of asymmetric microchannels with the topological equivalence of geometry are designed, which are T-90, Y-120, Y-150, and I-180 microchannels. A three-dimensional volume of fluid multiphase model is employed to investigate the asymmetric rheological behaviors of a droplet numerically. Three regimes of rheological behaviors as a function of the capillary numbers Ca and the asymmetries As defined by As = (b1 ? b2)/(b1 + b2) (where b1 and b2 are the widths of two asymmetric sidearms) have been observed. A power law model based on three major factors (Ca, As and the initial volume ratio r ₀) is employed to describe the volume ratio of two daughter droplets. The analysis of pressure fields shows that the pressure gradient inside the droplet is one of the major factors causing the droplet translation during its asymmetric breakup. Besides the above similarities among various microchannels, the asymmetric breakup in them also have some slight differences as various geometries have different enhancement or constraint effects on the translation of the droplet and the cutting action of flows. It is disclosed that I-180 microchannel has the smallest critical capillary number, the shortest splitting time, and is hardest to generate satellite droplets.     

Error bounds for complementarity problems with tridiagonal nonlinear functions

In this paper we consider the complementarity problem NCP(f) with f(x) = Mx + φ(x), where M ∈ R ^n×n is a real matrix and φ is a so-called tridiagonal (nonlinear) mapping. This problem occurs, for example, if certain classes of free boundary problems are discretized. We compute error bounds for approximations \({\hat x}\) to a solution x* of the discretized problems. The error bounds are improved by an iterative method and can be made arbitrarily small. The ideas are illustrated by numerical experiments.     

A new strategy for generating shortest addition sequences

An addition sequence problem is given a set of numbers X = {n ₁, n ₂, . . . , n _m }, what is the minimal number of additions needed to compute all m numbers starting from 1? This problem is NP-complete. In this paper, we present a branch and bound algorithm to generate an addition sequence with a minimal number of elements for a set X by using a new strategy. Then we improve the generation by generalizing some results on addition chains (m = 1) to addition sequences and finding what we will call a presumed upper bound for each n _j , 1 ≤ j ≤ m, in the search tree.     

Some properties of the disjunctive languages contained in <Emphasis Type="Italic">Q</Emphasis>

The set of all primitive words Q over an alphabet X was first defined and studied by Shyr and Thierrin (Proceedings of the 1977 Inter. FCT-Conference, Poznan, Poland, Lecture Notes in Computer Science 56. pp. 171–176 (1977)). It showed that for the case |X| ≥ 2, the set along with \({Q^{(i)} = \{f^i\,|\,f \in Q\}, i\geq 2}\) are all disjunctive. Since then these disjunctive sets are often be quoted. Following Shyr and Thierrin showed that the half sets \({Q_{ev} = \{f \in Q\,|\,|f| = {\rm even}\}}\) and Q _od = Q \ Q _ev of Q are disjunctive, Chien proved that each of the set \({Q_{p,r}= \{u\in Q\,|\,|u|\equiv r\,(mod\,p) \},\,0\leq r < p}\) is disjunctive, where p is a prime number. In this paper, we generalize this property to that all the languages \({Q_{n,r}= \{u\in Q\,|\,|u|\equiv r\,(mod\,n) \},\, 0\leq r < n}\) are disjunctive languages, where n is any positive integer. We proved that for any n ≥ 1, k ≥ 2, (Q _n,0) ^k are all regular languages. Some algebraic properties related to the family of languages {Q _n,r | n ≥ 2, 0 ≤ r < n } are investigated.     

Study on microchannel flows with a sudden contraction–expansion at a wide range of Knudsen number using lattice Boltzmann method

Numerical simulations have been performed on the pressure-driven rarefied flow through channels with a sudden contraction–expansion of 2:1:2 using isothermal two and three-dimensional lattice Boltzmann method (LBM). In the LBM, a Bosanquet-type effective viscosity and a modified second-order slip boundary condition are used to account for the rarefaction effect on gas viscosity to cover the slip and transition flow regimes, that is, a wider range of Knudsen number. Firstly, the in-house LBM code is verified by comparing the computed pressure distribution and flow pattern with experimental ones measured by others. The verified code is then used to study the effects of the outlet Knudsen number Kn _o , driving pressure ratio P _i /P _o , and Reynolds number Re, respectively, varied in the ranges of 0.001–1.0, 1.15–5.0, and 0.02–120, on the pressure distributions and flow patterns as well as to document the differences between continuum and rarefied flows. Results are discussed in terms of the distributions of local pressure, Knudsen number, centerline velocity, and Mach number. The variations of flow patterns and vortex length with Kn _o and Re are also documented. Moreover, a critical Knudsen number is identified to be Kn _oc  = 0.1 below and above which the behaviors of nonlinear pressure profile and velocity distribution and the variations of vortex length with Re upstream and downstream of constriction are different from those of continuum flows.     

<Emphasis Type="Italic">α</Emphasis>-Systems of differential inclusions and their unification

This paper introduces α-systems of differential inclusions on a bounded time interval [t₀, ?] and defines α-weakly invariant sets in [t₀, ?] × ?_n, where ?_n is a phase space of the differential inclusions. We study the problems connected with bringing the motions (trajectories) of the differential inclusions from an α-system to a given compact set M ? ?_n at the moment ? (the approach problems). The issues of extracting the solvability set W ? [t₀, ?] × ?ⁿ in the problem of bringing the motions of an α-system to M and the issues of calculating the maximal α-weakly invariant set W^c ? [t₀, ?] × ?ⁿ are also discussed. The notion of the quasi-Hamiltonian of an α-system (α-Hamiltonian) is proposed, which seems important for the problems of bringing the motions of the α-system to M.     

Threshold quantum secret sharing based on single qubit

Based on unitary phase shift operation on single qubit in association with Shamir’s (t, n) secret sharing, a (t, n) threshold quantum secret sharing scheme (or (t, n)-QSS) is proposed to share both classical information and quantum states. The scheme uses decoy photons to prevent eavesdropping and employs the secret in Shamir’s scheme as the private value to guarantee the correctness of secret reconstruction. Analyses show it is resistant to typical intercept-and-resend attack, entangle-and-measure attack and participant attacks such as entanglement swapping attack. Moreover, it is easier to realize in physic and more practical in applications when compared with related ones. By the method in our scheme, new (t, n)-QSS schemes can be easily constructed using other classical (t, n) secret sharing.     

Temperature dependant dielectric breakdown of sputter-deposited AlN thin films using a time-zero approach

In MEMS (micro electromechanical system) devices, piezoelectric aluminum nitride (AlN) thin films are commonly used as functional material for sensing and actuating purposes. Additionally, AlN features excellent dielectric properties as well as a high chemical and thermal stability, making it also a good choice for passivation purposes for microelectronic devices. With those aspects and current trends towards minimization in mind, the dielectric reliability of thin AlN films is of utmost importance for the realization of advanced device concepts. In this study, we present results on the transversal dielectric strength of 100 nm AlN thin films deposited by dc magnetron sputtering. The dielectric strength is measured using a time-zero approach, using a fast voltage ramp to stress the film up to the point of breakdown. The measurements are performed at different device temperatures. In order to achieve statistical significance, at least 12 measurements are performed for each environment parameter set and the results are analyzed using the Weibull approach. Basically, lower breakdown fields are observed with increasing temperatures up to 300 °C with a characteristic breakdown field strength E ₀ following the relationship $\sqrt {E_{0} } \propto T$ as reported in literature for similar measurements performed at silicon nitride thin films. From the intersection of this linear behavior, the Poole–Frenkel (PF) barrier height ? _B is determined to 0.54 eV, which is reasonable for AlN thin films. The slope of this relation is similar to values reported for silicon nitride thin films. This allows an estimation of the breakdown field at higher temperatures by extrapolation. Leakage current measurements show a dominant PF type conduction mechanism, verifying the applicability of $\sqrt {E_{0} } \propto T$ . No breakdown occurs in negative field direction, which is attributed to the metal–insulator–semiconductor configuration of the sample and hence, the presence of a depletion layer forming in the n-doped silicon and dominating the leakage current behavior.     

A linear-time algorithm for finding Hamiltonian (<Emphasis Type="Italic">s</Emphasis>, <Emphasis Type="Italic">t</Emphasis>)-paths in odd-sized rectangular grid graphs with a rectangular hole

A grid graph \(G_{\mathrm{g}}\) is a finite vertex-induced subgraph of the two-dimensional integer grid \(G^\infty \). A rectangular grid graph R(m, n) is a grid graph with horizontal size m and vertical size n. A rectangular grid graph with a rectangular hole is a rectangular grid graph R(m, n) such that a rectangular grid subgraph R(k, l) is removed from it. The Hamiltonian path problem for general grid graphs is NP-complete. In this paper, we give necessary conditions for the existence of a Hamiltonian path between two given vertices in an odd-sized rectangular grid graph with a rectangular hole. In addition, we show that how such paths can be computed in linear time.     

Quartic B-spline collocation method for fifth order boundary value problems

Given two sorted arrays \({A=(a_1,a_2,\ldots ,a_{n_1})}\) and \({B=(b_1,b_2,\ldots ,b_{n_2})}\), where their elements are drawn from a linear range in n and n = Max(n ₁, n ₂). The merging of two sorted arrays is one of the fundamental problems in computer science. The main contribution of this work is to give a new merging algorithm on a EREW PRAM. The algorithm is cost optimal, deterministic and simple. The algorithm uses \({\frac{n}{\log{n}}}\) processors and O(n) storage. We also give the conditions that make the algorithm run in a constant time on a EREW PRAM.     

The weight-constrained maximum-density subtree problem and related problems in trees

Given a tree T=(V,E) of n nodes such that each node v is associated with a value-weight pair (val _v ,w _v ), where value val _v is a real number and weight w _v is a non-negative integer, the density of T is defined as \(\frac{\sum_{v\in V}{\mathit{val}}_{v}}{\sum_{v\in V}w_{v}}\). A subtree of T is a connected subgraph (V′,E′) of T, where V′?V and E′?E. Given two integers w _min? and w _max?, the weight-constrained maximum-density subtree problem on T is to find a maximum-density subtree T′=(V′,E′) satisfying w _min?≤∑_v∈V′ w _v ≤w _max?. In this paper, we first present an O(w _max? n)-time algorithm to find a weight-constrained maximum-density path in a tree T, and then present an O(w _max? ² n)-time algorithm to find a weight-constrained maximum-density subtree in T. Finally, given a node subset S?V, we also present an O(w _max? ² n)-time algorithm to find a weight-constrained maximum-density subtree in T which covers all the nodes in S.