Ag纳米粒子磁控溅射制备及其热稳定性研究

利用磁控溅射在玻璃衬底上制备Ag纳米粒子及其氧化物（AgOx）薄膜，通过高温退火实验，研究银及AgOx薄膜的热稳定特性。采用x射线衍射分析薄膜的晶相结构，采用UV-Vis分光光度计测定薄膜的吸收光谱。结果表明：Ag纳米薄膜在450nm附近出现特征吸收峰，200℃退火后，峰位蓝移，400℃退火后，吸收峰显著减弱，表明Ag纳米粒子在退火过程中发生了蒸发；AgOx薄膜在200℃下退火后，出现Ag纳米粒子特征吸收峰，表明AgOx的热分解，400℃退火同样导致Ag纳米粒子的蒸发。     

真空退火对LiF和CaF2薄膜结晶性能的影响

研究了真空退火对玻璃衬底上热蒸发沉积的LiF和CaF2 薄膜的结晶性能的影响。X射线衍射分析结果表明 ,在4 2 0℃温度下 ,随着退火时间的增长 ,LiF薄膜的结晶状况明显改善 ;在 4 6 0℃温度下 ,随着退火时间的增长 ,CaF2 薄膜的结晶状况越来越好     

Mg2Si半导体薄膜的热蒸发制备

采用电阻式热蒸发方法和退火工艺制备出了Mg2Si半导体薄膜。研究了退火时间对Mg2Si薄膜的形成和结构的影响。首先在Si(111)衬底上沉积380nm Mg膜,然后在退火炉低真空10-1～10-2Pa氛围400℃退火,退火时间分别为3、4、5、6和7h。通过X射线衍射仪(XRD)、场发射扫描电镜(FESEM)和拉曼光谱仪对薄膜的结构、形貌和光学性质进行了表征。结果表明,采用电阻式热蒸发方法成功地制备了半导体Mg2Si薄膜,Mg2Si薄膜具有Mg2Si(220)的择优生长特性。最强衍射峰出现在40.12°位置,随着退火时间的延长,Mg2Si(220)衍射峰强度先逐渐变强后变弱,退火4h时该峰强度最强。在256和690cm-1附近有两个Mg2Si拉曼特征峰,退火时间为4和7h时,256cm-1附近Mg2Si拉曼特征峰较强。     

真空退火以LiF和CaF2薄膜结晶性能的影响

研究了真空退火对玻璃衬底上热蒸发沉积的LiF和CaF2薄膜的结晶性能的影响。X射线衍射分析结果表明，在420℃温度下，随着退火时间的增长，LiF薄膜的结晶状况明显改善；在460℃温度下，随着退火时间的增长，CaF2薄膜的结晶状况越来越好。     

磁控溅射制备纳米二氧化钒半导体薄膜及表征

本文采用射频磁控溅射法,结合氩气气氛退火工艺制备了VO2薄膜。通过优化磁控溅射和热退火工艺,结合激光拉曼光谱仪(Raman)、X射线光电子能谱(XPS)、电镜扫描(SEM)对薄膜的相结构、组分和表面形貌进行分析。结果表明:溅射衬底温度为150℃,在450℃氩气气氛退火2.5 h能制备出高质量的VO2薄膜,表面呈米粒状,有一定的取向性。     

真空热蒸发镀CIAS薄膜

采用真空热蒸发方法在普通玻璃基底上制备Cu In0.7Al0.3Se2(CIAS)薄膜,并对之进行450℃真空硒化退火处理。结果表明,制备的CIAS薄膜具有黄铜矿结构并且以(112)晶面优先生长。真空硒化退火后,薄膜晶体结构更完整,晶粒长大,成分分布均匀,更接近CIAS晶体的化学计量比。薄膜为P型半导体,退火后的薄膜禁带宽度减小至1.38 e V,带电粒子数下降至2.41E+17 cm-3,带电粒子迁移率增加至5.29 cm2/(N·s),电阻率升高至4.9Ω·cm。     

Ti O2纳米管阵列基底退火温度对CdSe/Ti O2异质结薄膜光电化学性能的影响

通过电化学沉积法以TiO2纳米管阵列(TNTs)为基底制备CdSe/TiO2异质结薄膜。研究TiO2纳米管阵列基底不同退火温度(200,350,450,600℃)对CdSe/TiO2异质结薄膜光电化学性能的影响。采用SEM,XRD,UV-Vis,电化学测试等方法对样品的微观形貌、晶体结构、光电化学性能等进行表征。结果表明:立方晶型的CdSe纳米颗粒均匀沉积在TiO2纳米管阵列管口及管壁上。TiO2纳米管阵列未经退火及退火温度为200℃时,为无定型态,在TiO2纳米管阵列上沉积的CdSe纳米颗粒数量少,尺寸小,异质结薄膜光电性能较差,光电流几乎为零。随着退火温度升高到350℃,TiO2纳米管阵列基底开始向锐钛矿转变;且沉积在TiO2纳米管上的CdSe颗粒增多,尺寸增大,光电化学性能提高。退火温度为450℃时光电流值达到最大,为4.05mA/cm^2。当退火温度达到600℃时,TiO2纳米管有金红石相出现,CdSe颗粒变小,数量减少,光电化学性能下降。     

磁控溅射制备SiC薄膜的高温热稳定性

采用磁控溅射方法在Si基底上制备SiC薄膜,研究了SiC薄膜经不同温度和气氛条件高温退火前后结构、成份的变化.结果表明,薄膜主要以非晶为主,由Si-C键,C-C键和少量Si的氧化物杂质组成;在真空条件下经高温退火后,薄膜C-C键的含量减少,而Si-C键的含量增加,真空退火有利于SiC的形成;在800℃空气中退火后,薄膜表面生成一层致密的SiO2薄层,阻止了氧气与薄膜内部深层的接触,有效保护了内部的SiC.在空气条件下,SiC薄膜在800℃具有较好的热稳定性.     

NiFeCr/NiFe/MgO/Ta薄膜制备及热处理研究

采用磁控溅射制备了NiFeCr(4.5nm)/NiFe(10nm)/MgO(4.0nm)/Ta(5.0nm)薄膜,并对薄膜进行真空磁场退火。退火后薄膜磁电阻变化率显著提高,400℃退火后达到3.02%,之后随着退火温度的升高,磁电阻变化率下降。XRD结果表明,薄膜不仅具有很强的NiFe(111)织构,同时还出现了MgO的(111)衍射峰。随退火温度的升高,MgO(111)衍射峰的强度有所降低。     

离子束辅助反应电子束蒸发TiO2薄膜的结构和光学性能

TiO2具有较高的折射率和介电常数,在光学和电子学方面有着广泛的应用。本论文采用离子束辅助反应电子束真空蒸镀法,以Ti为膜料,纯度为99．99％的O2为反应气体,通过电子束蒸发,在玻璃衬底上反应生成TiO2薄膜。使用XRD、SEM分别对50℃、150℃、300℃三个不同衬底温度下沉积的薄膜及其经过450℃真空退火1h后的结构进行了分析,对薄膜的折射率、透射率进行了测量。结果表明,与传统的电子束蒸发相比,离子束辅助电子束蒸发可以增加成膜原子的能量,使沉积的薄膜结构致密,所制备的薄膜具有较高的折射率,并且薄膜在可见光范围内具有良好的透过性能。     

Influence of different annealing processes under various atmospheres on the oxidation behaviour of γ-TiAl

Abstract

A detailed study of the oxidation behaviour of bare γ-TiAl based alloy Ti–45Al–8Nb under various conditions, such as different atmospheres, pressures, temperatures (900°C, 1000°C) and times (100–200 h) is presented. Under high vacuum conditions (10^–6 mbar) a continuous zone of α-₂Ti₃Al was formed at the surface with an oxygen-enriched phase on top. No oxide scale formation was obvious. During thermal treatment under Ar-atmosphere at low vacuum pressure (approximately 50 mbar) mainly nitrides (TiN, Ti₂AlN) and Al₂O₃ particles were formed at the surface with an α-₂layer below. Annealing γ-TiAl in hydrogen atmosphere (about 1040 mbar) led to the formation of a thick reaction zone. A TiO₂ layer was formed on top, followed by a mixed oxide scale. Beneath that scale a thick region with alumina, σ–Nb₂Al and α-₂Ti₃Al was observed.

Moreover, the oxidation behaviour of several thermally pre-treated samples was tested by cyclic oxidation at 900°C in air. The microstructure of the oxide scale formed after testing can be compared with that of non pre-treated material. γ-TiAl annealed under high vacuum conditions exhibits the lowest oxidation rate, while the mass gain of specimens pre-treated under Ar-atmosphere increased rapidly in the first cycles. All pre-treated specimens exceeded a lifetime of 600 cycles at minimum. The reference material failed after 520 cycles.     

铁电薄膜退火方法的研究

以锆钛酸铅薄膜（PZT）为例，分析了国内外铁电薄膜退火的各种方法。针对解决铁电薄膜基底高温生长工艺与硅集成电路承受温度较低的不兼容及器件性质劣化的难题，分别对普通炉子退火、快速热退火及激光退火进行了详细的分析比较。激光低温退火技术有望成功地在未来应用PZT铁电薄膜制作组件时，增加其制备工艺设计的弹性和可行性。     

Task assignment problems in distributed computing systems by simulated annealing

Abstract

The stochastic, heuristic search algorithm called simulated annealing is considered for the problems of static task assignment in distributed computing systems. The purposes of task assignment problems are to assign modules of programs over a set of interconnected processors in order to both maximize the utilization of processors and minimize interprocessor communication costs. This problem has been proven to be NP‐hard. Although simulated annealing has been applied to a broad class of combinatorial optimization problems, but it requires a long computation time in order to converge to the globally optimal solution. In this paper, we design a very efficient annealing schedule with good move generation strategies and use the concept of specific heat and the frozen condition to obtain near‐optimal solutions for task assignment problems with a significantly large reduction in the number of iterations.     

Experiments and simulations of directionally annealed ODS MA 754

Both directional and isothermal annealing experiments have been performed on the hot-rolled ODS nickel-based superalloy MA 754. Directional annealing of MA 754 produced an elongated, coarse grain structure with a {1 1 0}1 0 0 texture for all hot-zone velocities examined, with the grain aspect ratio and twin boundary density decreasing with increasing hot-zone velocity. Isothermal annealing also produced elongated structures, but with larger grain aspect ratios and a stronger {1 1 0}1 0 0 texture. In order to elucidate the results of the experimental studies, a front-tracking computer-based model [H.J. Frost, C.V. Thompson, C.L. Howe, J.H. Whang, Scripta Metall. 22 (1988) 65–70] was modified to simulate the directional/isothermal annealing processes for materials with particles. Simulations of directional annealing with particles aligned in the direction of hot-zone movement could produce (at the appropriate hot-zone velocities) columnar grain structures with some finer grains clustered around the particles. Contrary to experimental observations, simulations of isothermal annealing in similar particle-containing material did not produce columnar grain structures, but equi-axed grains whose size was defined by the spacing between the lines of particles. Thus, the simulation results suggest that it is the texture, and not the particles, of the hot-rolled MA 754 that leads to a columnar grain structure.     

富Ni的NiAl退火组织和室温力学性能

快速凝固Ｎｉ－３４．６ａ．％Ａｌ薄带经１５２３Ｋ退火２ｈ并以较快速度冷却扣形成以ＮｉＡｌ马氏体为基体，γ－Ｎｉ３Ａｌ沿晶界网状分布和少量残β－ＮｉＡｌ的组织，退火，室温弯曲延性良好。     

工程结构混合离散变量优化的模拟退火方法

本文针对工程结构优化设计中普遍存在的混合离散变量的现象，探索了应用模拟退火算法直接获得最优解的方法，从而不再对离散变量作“规格化”后处理。文中根据混合离散变量的特点，提出了几种邻域状态的产生函数和迭代方案，给出了适宜的模拟退火过程的冷却进度表。算例表明该方法能有效地解决工程结构混合离散变量的优化问题。     

Giant Stress—impedance Effect in Amorphous and Current Annealed Fe73.5Cu1Nb3Si13.5B9 Ribbons

The giant stress-impedance(GSl) effect in amorphous and current annealed Fe73.5Cu1Nb3Si13.5B9 ribbons has been investigated .The results showed that the GSl effect changed drastically with annealing techniques and the maximum stress impedance ratio of 350% was obtained after optimal conditions of current annealing .The behaviors of the stress impedance vary with densities of annealing current and the stress longitudinally applied during current annealing.The maximum change of stress impedance existed in the sample annealed by high-current-density electropulsing under applied stress of 100MPa.     

热处理对WO3薄膜的结构和气致变色性能的影响

用溶胶－凝胶法在普通钠钙玻璃上制备了WO3薄膜，并分别在250℃，360℃，450℃的空气环境中对薄膜进行了热处理，用SEM，XRD观察了薄膜的表面形貌，分析了薄膜的微观结构及热处理温度和催化剂含量对薄膜的结构和气致变色性能的影响。     

Laser annealing of silicon

In recent years laser processing has attracted much attention in view of its potential use in basic solid-state and material science research as well as in new processing technologies. The dominant feature of laser processing being the deposition of large amounts of energy (a few J/cm²) over very short time scales (a few tens of nanoseconds), it leads to melting of surface layers of solid followed by rapid resolidification. In this article, a few basic consequences of such laser-induced phenomena in silicon are reviewed.     

Thin-film polycrystalline silicon solar cells formed by flash lamp annealing of a-Si films

We have fabricated thin-film solar cells using polycrystalline silicon (poly-Si) films formed by flash lamp annealing (FLA) of 4.5-µm-thick amorphous Si (a-Si) films deposited on Cr-coated glass substrates. High-pressure water-vapor annealing (HPWVA) is effective to improve the minority carrier lifetime of poly-Si films up to 10 µs long. Diode and solar cell characteristics can be seen only in the solar cells formed using poly-Si films after HPWVA, indicating the need for defect termination. The actual solar cell operation demonstrated indicates feasibility of using poly-Si films formed through FLA on glass substrates as a thin-film solar cell material.