表面传导电子发射显示器微细结构光刻工艺的优化

研究了旋涂和光刻工艺对制备表面传导发射显示器(SED)微细结构的影响,分析正性光刻胶和旋涂工艺的作用机理,探讨光刻胶的平面旋涂工艺、曝光剂量、前烘对光刻图形的影响.借助旋涂技术将光刻胶转移在附有金属薄膜的玻璃基片上,利用紫外光对其进行曝光,通过视频显微镜、台阶仪对实验结果分析,优化实验工艺参数.结果表明,光刻胶留膜率随旋转速度增大而减少,随光刻胶的粘度增大而增大,光刻图形宽度随曝光剂量的增大而变窄,曝光剂量40～50 mJ/cm2,前烘110 ℃保温25 min条件下光刻图形边缘平整,为研制SED微细结构奠定了基础.     

硅集成电路光刻技术的发展与挑战

从微电子集成电路技术发展的趋势,介绍了集成电路技术发展对光刻曝光技术的需求,综述了当前主流的DUV光学曝光技术和新一代曝光技术中的157nm光学曝光、13nm EUV曝光、电子束曝光、X射线曝光、离子束曝光和纳米印制光刻技术的发展状况及所面临的技术挑战.同时,对光学曝光技术中采用的各种分辨率增强技术如偏轴照明(OAI)、光学邻近效应校正(OPC)、移相掩膜(PSM)、硅片表面的平整化、光刻胶修剪(resist trimming)、抗反射功能和表面感光后的多层光刻胶等技术的原理进行了介绍,并对不同技术时代可能采用的曝光技术作了展望性的评述.     

硅集成电路光刻技术的发展与挑战

从微电子集成电路技术发展的趋势,介绍了集成电路技术发展对光刻曝光技术的需求,综述了当前主流的DUV光学曝光技术和新一代曝光技术中的157nm光学曝光、13nm EUV曝光、电子束曝光、X射线曝光、离子束曝光和纳米印制光刻技术的发展状况及所面临的技术挑战.同时,对光学曝光技术中采用的各种分辨率增强技术如偏轴照明(OAI)、光学邻近效应校正(OPC)、移相掩膜(PSM)、硅片表面的平整化、光刻胶修剪(resist trimming)、抗反射功能和表面感光后的多层光刻胶等技术的原理进行了介绍,并对不同技术时代可能采用的曝光技术作了展望性的评述.     

对胶体球光刻中单层胶体晶体曝光特性的研究

对胶体球光刻中单层胶体晶体(MCC)的曝光特性进行了研究。利用磁控溅射的方法在蓝宝石衬底上生长SiO2薄膜并旋涂光刻胶,通过固液界面自组装的方法在光刻胶上制备了单层胶体晶体。胶体球光刻利用单层胶体晶体作为微透镜阵列,通过紫外曝光的方法在光刻胶上制备微孔阵列。光刻胶上图形的周期性与胶体球的直径有关,并且大直径的胶体球的聚光性能要强于小直径胶体球,在曝光过程中随着曝光时间的增加,由于曝光量的增加以及光刻胶的漂白现象,光刻胶上微孔的尺寸也在增加。最后以曝光后的光刻胶为掩膜,将感应耦合等离子体刻蚀技术(ICP)以及湿法腐蚀相结合,制备出了图形化蓝宝石(PSS)衬底。     

微柱透镜阵列的全息-光刻胶热熔制作技术

为改善微柱透镜阵列的制作技术、消除光刻工艺对光刻掩模版的依赖,研究了利用全息-热熔技术制作微柱透镜阵列的新方法,即首先采用了全息技术进行曝光,然后利用光刻胶热熔技术在K9玻璃基底上制作出了面形良好的微柱透镜阵列。实验结果表明,进行全息曝光并显影后,能够在光刻胶表面产生良好的正弦阵列表面结构,之后采用光刻胶热熔技术可将光刻胶的正弦阵列结构转变为微柱透镜阵列,且实验结果良好。     

单层胶剥离工艺及其应用

本文主要叙述了单层胶剥离工艺及其原理,并对这项技术的关键问题进行了分析.文章还报导了剥离技术在Pb合金约瑟夫逊隧道结中的应用及I-V特性测试结果.其整个工艺过程均使用国产光刻胶和普通紫外曝光设备.     

SU-8胶光刻工艺参数优化研究

对基于SU-8胶的UV-LIGA技术进行了工艺优化,研究了光源波长和曝光时间对SU-8胶成型的影响。结果表明,光刻胶表面线宽变化随曝光时间增加先减少后增加,有一个极小值;侧壁角度先增加后减少,有一个极大值。通过优化光源波长、曝光时间以及显影时间三个主要工艺参数,可以获得侧壁角度为90.64°正角的300μm厚光刻胶微结构和侧壁角度为89.98°近似垂直的500μm厚光刻胶微结构。     

光刻技术的现状和发展

着生从涂胶、曝光（包括光源和曝光方式等）、光刻胶和深度光刻等方面介绍了光刻技术的现状和未来的发展趋势。     

硅基自由曲面光学微透镜阵列制作的光学性能研究

针对自由曲面无固定解析式的特点,根据感光材料的光化学作用原理,以及曝光能量与曝光深度的制约关系,提出采用变剂量曝光的光刻方法制作自由曲面光学微器件。从光传播理论出发,分析了曝光过程光刻胶中光能量分布规律和曝光深度随曝光能量的变化关系,建立了光分布规律的数学模型,并应用计算机软件对模型进行仿真。结果表明:光能量在胶膜内呈规律性分布,在能量一定的情况下曝光深度随时间规律性增加,并逐渐达到饱和。同时,应用长春理工大学BOL500型复合坐标激光直写系统,选用美国Futurrex62A光刻胶、波长412 nm He-Ge气体激光器、5‰NaOH显影液进行曝光及显影实验,所得实验数据与仿真结果吻合。     

恒光强调节系统和积分曝光控制系统的一般研究

本文着重讨论了超高压汞灯的光谱衰退特性和在不同光谱线和不同光强的条件下,两种光刻胶的曝光特性。并研讨了恒光强调节系统和积分曝光控制系统的曝光控制精度。对上述两种曝光控制系统作者分别提出了改进曝光控制精度的技术措施。     

图形反转方法制备MEMS器件电极的研究

研究了利用AZ5214光刻胶图形反转实现抗腐蚀金属NiCr剥离的关键工艺步骤,该方法可以用于制备金属电极,进而优化器件性能.理论上讨论了图形反转的形成机理,根据Dill理论对光刻胶曝光模型进行了推导,并使用MATLAB模拟工具对其进行了仿真.通过优化各项工艺参数,得到了最佳倒台面结构,并制备了精度达到1μm宽的用于MEMS器件的金属NiCr电极.     

基于UV-LIGA技术的双层微齿轮模具镶块工艺

以氧化铟锡(ITO)玻璃作为基底,采用UV-LIGA技术制作了双层微齿轮型腔模具的镶块。首先,采用正胶(RZJ-304)进行光刻,在ITO玻璃表面电镀镍掩模,通过镍掩模对第一层SU-8光刻胶进行背面曝光。再利用正面套刻的方法对第二层SU-8光刻胶进行曝光,显影得到双层微齿轮的胶模。最后,进行微电铸得到双层微齿轮型腔镶块。通过实验验证了双层微齿轮模具镶块制作的工艺流程,优化了其工艺参数,克服了底部曝光不足引起的问题,并对制作工艺过程中产生的涂胶不平整、前烘时胶层不稳定、热板加热不均以及接触式曝光破坏胶层表面等问题进行了研究。所制得的双层微齿轮胶模垂直度高,表面质量好,且套刻精度高。     

High-aspect-ratio micromachining via deep X-ray lithography

High-aspect-ratio microsystems technology (HARMST) can be implemented by using thick photoresist technology, which requires X-ray photons for exposure. This was first realized in Germany via the so-called LIGA process. To make this process cost effective, exposures with high-energy photons were introduced in 1993 via a University of Wisconsin-Brookhaven National Laboratory cooperation. The addition of a solvent bonded resist technology and replanarization after electroplating and X-ray mask aligning yield a HARMST processing sequence that uses large-area, sequential X-ray masks without diaphragms. This technology may be applied to precision engineered parts which do not involve electronics. The processing sequence is also used for high performance linear and rotational, magnetic and electrostatic actuators. System applications in optics involve spectrometers and other devices. A discussion of US and world wide efforts in HARMST points at increasing demands for this type of processing tool     

厚层抗蚀剂曝光模型及其参数测量

针对厚层抗蚀剂曝光过程中存在诸非线性因素的影响，更新Dill曝光参数的定义，建立了适合描述厚层抗蚀剂曝光过程的增强Dill模型．光刻过程模拟的准确性与曝光参数的测量精度有很大关系，为此，建立了实时曝光监测实验装置，测量了不同工艺条件、不同厚度抗蚀剂的曝光透过率曲线，并演绎计算出曝光参数随抗蚀剂厚度和工艺条件的变化规律．最后给出了采用增强Dill模型进行曝光过程的模拟和实验结果的分析．     

Optical lithography

This is the first in a series of papers describing a theoretical process model for positive photoresist. This model, based upon a set of measurable parameters, can be used to calculate the response of photoresist to exposure and development in terms of image surface profiles. The model and its parameters are useful in many ways, from measuring quantitative differences between different resist materials to establishment of process sensitivities and optimization of the resist process within a manufacturing system. In this paper, the concepts of photoresist modeling are introduced by following the exposure and development of a photoresist film on silicon exposed by a uniform monochromatic light flux. This very simple example provides insight into the complex nature of the photoresist process for reflective substrates. The accompanying paper, "Characterization of Positive Photoresists," gives detail about measurement of the new photoresist parameters. It is supported by "In-Situ Measurement of Dielectric Thickness During Etching or Developing Processes" which discusses automated experimental techniques needed to establish photoresist development rates. These resist parameters provide a complete quantitative specification of the exposure and development properties of the resist. They also allow quantitative comparisons: lot to lot, material to material, and processing condition to processing condition. The fourth paper, "Modeling Projection Printing of Positive Photoresists," applies the process model to one technique of photoresist exposure. This paper contains the detailed mathematics of the model. The model is then used to calculate line-edge profiles For developed resist images.     

Lithographic importance of base diffusion in chemically amplified photoresists

Mesoscopic (i.e., discrete and stochastic) models are applied to study the impact of photoresist processing and material conditions on process performance. The modeling approach includes all exposure, post-exposure bake, and development related parameters for chemically amplified resists. Resist process performance is evaluated in terms of required exposure dose (i.e., sensitivity), dose latitude (i.e., resolution), and line-edge roughness (LER). There exists a well-known trade-off between sensitivity, resolution, and LER. Theoretical models have concluded that optimization of any one or two of these properties go at the expense of the other properties. This paper shows that the effects of base diffusion, which have not been taken into account in previous studies, allow a simultaneous improvement of photoresist sensitivity, resolution, and LER. A putative explanation is given about the mechanism how the coupled diffusion of acid and base can allow a simultaneous improvement of all three process properties.     

Reactive ion etching and characterization of p-silk ultra low-k film

Reactive ion etch (RIE) of p-SiLK, a spin-on polymer based ultra low-k (ULK) material with a k value of /spl sim/2.2 was characterized and its influence on electrical yield and dielectric breakdown is presented here. Material characterization was done using blanket films after curing and the effect of exposure to different conventional plasma etch gas mixtures was studied for surface composition, roughness and dielectric constant. Trench etch process was developed for 130-nm technology node for single damascene process integration. Dual hard mask approach was taken and two etch schemes viz., etching under hardmask and etching under photoresist were evaluated. In both schemes, trench etch profiles were near vertical and critical dimension (CD) control was within 10%. RIE lag and the carbon depletion at the sidewalls were found to be insignificant confirming acceptable etch process performance. Etching under photoresist scheme was found advantageous in terms of trench profile for isolated structures, reduced cycle time making the process cost effective and reduced post-CMP defects. However, from the comparison of electrical test results, etch under hardmask scheme showed higher electrical yield and better performance than etch under PR scheme. Although trench sidewalls were exposed to plasma during both schemes, sidewall damage did not contribute to overall leakage. The RIE process developed and the characterization results have confirmed the compatibility of material and RIE process for successful process integration.     

Photolithographic linewidth control

A simple model for the image formation process in photoresist is proposed based on Fresnel diffraction from the edge of a mask feature. It is shown theoretically and verified experimentally that the dimensional difference between a clear mask feature and its image in photoresist is given by aL^½[ ln (Ei) - ln (ET) + ln (K) ] where a and K are constants peculiar to the exposure optics, L is the separation between mask and silicon wafer, Eiis the exposure energy, and ETis the effective exposure energy threshold of the photoresist. The model is used to show the existence of "optimum" exposure ratios Ei/ETwhich minimize image variability in hard-, soft-, and near-contact printing. Control of this exposure ratio is found to be the key to successful use of off-contact printing. Based on this model, a photolithographic process control system is outlined in which exposure tool operation and photoresist processing parameters are characterized and monitored with a single silicon wafer. The system is equally applicable to photomask fabrication.