A natural color scanning electron microscopy image

A method for obtaining a scanning electron microscopy (SEM) image with natural color information (NCSEM image) has been developed by using an SEM operated under low vacuum or low voltage, a video microscope (VM), and a high-performance personal computer. In order to produce an NCSEM image with both the fine structures of the SEM image and the color information included in the VM image, an improvement of the depth of focus in VM image is required. This can be successfully performed by some digital image processing techniques. A difference in resolution between the SEM image and the VM image does not disturb our study as shown in the text. In addition, the well-known hue, saturation, intensity (HSI) color model, which is frequently utilized for color image manipulation, was originally altered for the present purpose.     

Improved depth of field in the scanning electron microscope derived from through-focus image stacks

The depth of field limit in the scanning electron microscope (SEM) can be overcome by recording stacks of through-focus images (as in conventional and confocal optical microscopy) which are postprocessed to generate an all-in-focus image. Images are recorded under constant electron optical conditions by mechanical Z-axis movement of the sample. This gives rise to a change in magnification through the stack due to the perspective projection of the SEM image. Calculation of the necessary scaling as well as the derivation of best focus information at every patch in the image--and a contour map function derived from the selected patch depths--are incorporated in a new software package (Auto-Montage Pro). The utility of these procedures is demonstrated with examples from the study of human osteoporotic bone, where results show uncoupling of resorption and formation. The procedure can be combined with pseudo-colour coding for the direction of apparent illumination when using backscattered electron (BSE) detectors in contrasting positions.     

Imaging of specimens at optimized low and very low energies in scanning electron microscopes.

The modern trend towards low electron energies in scanning electron microscopy (SEM), characterised by lowering the acceleration voltages in low-voltage SEM (LVSEM) or by utilising a retarding-field optical element in low-energy SEM (LESEM), makes the energy range where new contrasts appear accessible. This range is further extended by a scanning low-energy electron microscope (SLEEM) fitted with a cathode lens that achieves nearly constant spatial resolution throughout the energy scale. This enables one to optimise freely the electron beam energy according to the given task. At low energies, there exist classes of image contrast that make particular specimen data visible most effectively or even exclusively within certain energy intervals or at certain energy values. Some contrasts are well understood and can presently be utilised for practical surface examinations, but others have not yet been reliably explained and therefore supplementary experiments are needed.     

Strategies for optimum use of superposition diffractogram in scanning electron microscopy

Characteristics of the superposition diffractogram used for precisely estimating scanning electron microscopy (SEM) resolution are investigated. It is shown that the choice of pixel density to satisfy the sampling theorem, the direction of scanning, the choice of image shift direction, the properties of the specimen, the effect of external disturbances such as vibration and stray magnetic fields, and the effect of the window function required in the Fourier transform, are all factors which must be considered in order to make the superposition diffractogram a practical technique. An additional important improvement required to exploit fully the ability of the superposition diffractogram, which potentially is very high, is a special scanning mode which employs a digital scan generator, and digital image processing technology with autocorrelation functions.     

Analytical scanning electron microscopy for solid surface

A scanning electron microscope of ultra-high-vacuum (UHV-SEM) with a field emission gun (FEG) is operated at the primary electron energies of from 100 eV to 3 keV. The instrument can form the images that contain information on surface chemical composition, chemical bonding state (electronic structure), and surface crystal structure in a microscopic resolution of several hundred angstroms (Å) using the techniques of scanning Auger electron microscope, scanning electron energy loss microscope, and scanning low-energy electron diffraction (LEED) microscope. A scanning tunneling microscope (STM) also has been combined with the SEM in order to obtain the atomic resolution for the solid surface. The instrumentation and examples of their applications are presented both for scanning LEED microscopy and STM.     

A method for personal expertise-independent evaluation of image resolution in scanning electron microscopy

The two conventional methods currently employed for the evaluation of image resolution in scanning electron microscopy are the gap method and a fast Fourier transform (FFT) method. These can be highly dependent on personal expertise on the distinction between signal information and noise contained in a micrograph. Hence, the present paper proposes an alternative method (referred to as a contrast-to-gradient (CG) method) that can determine the image resolution of a micrograph without requiring personal expertise on the judgment of noise. The image resolution in the CG method is defined as a weighted harmonic mean of the local resolution, which is proportional to the quotient of the threshold contrast divided by the local gradient. The local gradient is calculated from the quadratic function that best fits the local pixel intensities over 5 x 5 pixels. It has been shown that the CG method, compared with the FFT method, has a broader range of applications for various types of images, such as low-contrast, noise-containing, filter-processed, highly directional, and quasi-periodic feature images.     

Mechanical scanning of the specimen in the scanning electron microscope

A scanning electron microscope (SEM) system equipped with a motor drive specimen stage fully controlled with a personal computer (PC) has been utilized for obtaining ultralow magnification SEM images. This modem motor drive stage works as a mechanical scanning device. To produce ultra-low magnification SEM images, we use a successful combination of the mechanical scanning, electronic scanning, and digital image processing techniques. This new method is extremely labor and time saving for ultra-low magnification and wide-area observation. The option of ultra-low magnification observation (while maintaining the original SEM functions and performance) is important during a scanning electron microscopy session.     

Primary considerations for image enhancement in high-pressure scanning electron microscopy

The mechanisms of electron beam scattering are examined to evaluate its effect on contrast and resolution in high-pressure scanning electron microscopy (SEM) techniques reported in the literature, such as moist-environment ambient-temperature SEM (MEATSEM) or environmental SEM (ESEM). The elastic and inelastic scattering cross-sections for nitrogen are calculated in the energy range 5–25 keV. The results for nitrogen are verified by measuring the ionization efficiency, and measurements are also made for water vapour. The effect of the scattered beam on the image contrast was assessed and checked experimentally for a step contrast function at 20 kV beam voltage. A considerable degree of beam scattering can be tolerated in high-pressure SEM operation without a significant degradation in resolution. The image formation and detection techniques in high-pressure SEM are considered in detail in the accompanying paper.     

Comparison in spatial spreads of secondary electron information between scanning ion and scanning electron microscopy

Monte Carlo simulations have been carried out to compare the spatial spreads of secondary electron (SE) information in scanning ion microscopy (SIM) with scanning electron microscopy (SEM). Under Ga ion impacts, the SEs are excited by three kinds of collision-partners, that is, projectile ion, recoiled target atom, and target electron. The latter two partners dominantly contribute to the total SE yield gamma for the materials of low atomic number Z2. For the materials of high Z2, on the other hand, the projectile ions dominantly contribute to gamma. These Z2 dependencies generally cause the gamma yield to decrease with an increasing Z2, in contrast with the SE yield delta under electron impacts. Most of the SEs are produced in the surface layer of about 5lambda in depth (lambda: the mean free path of SEs), as they are independent of the incident probe. Under 30 keV Ga ion impacts, the spatial spread of SE information is roughly as small as 10 nm, decreasing with an increasing Z2. Under 10 keV electron impacts, the SEI excited by the primary electrons has a small spatial spread of about 5lambda, but the SEII excited by the backscattered electrons has a large one of several 10 to several 100 nanometers, decreasing with an increasing Z2. The main cause of a small spread of SE information at ion impact is the short ranges of the projectile ions returning to the surface to escape as backscattered ions, the recoiled target atoms, and the target electrons in collision cascade. The 30 keV Ga-SIM imaging is better than the 10 keV SEM imaging in spatial resolution for the structure/material measurements. Here, zero-size probes are assumed.     

Helium ion microscopy and its application to nanotechnology and nanometrology

Helium ion microscopy (HeIM) presents a new approach to nanotechnology and nanometrology, which has several potential advantages over the traditional scanning electron microscope (SEM) currently in use in research laboratories and manufacturing facilities across the world. Owing to the very high source brightness, and the shorter wavelength of the helium (He) ions, it is theoretically possible to focus the ion beam into a smaller probe size relative to that of the electron beam of an SEM. Hence, resolution 2 × – 4 × better than that of comparable SEMs is theoretically possible. In an SEM, an electron beam interacts with the sample and an array of signals are generated, collected and imaged. This interaction zone may be quite large depending upon the accelerating voltage and materials involved. Conversely, the helium ion beam interacts with the sample, but it does not have as large an excitation volume and, thus, the image collected is more surface sensitive and can potentially provide sharp images on a wide range of materials. Compared with an SEM, the secondary electron yield is quite high—allowing for imaging at extremely low beam currents and the relatively low mass of the helium ion, in contrast to other ion sources such as gallium, potentially results in minimal damage to the sample. This article reports on some of the preliminary work being done on the HeIM as a research and measurement tool for nanotechnology and nanometrology being done at NIST. SCANNING 30: 457–462, 2008. Published 2008 by Wiley Periodicals, Inc.     

Deconvolution of scanning electron microscopy images

This paper describes a method of removing blurs in scanning electron microscopy (SEM) images caused by the existence of a finite beam size. Although the resolution of electron microscopy images has been dramatically improved by the use of high-brightness electron guns and low-aberration electron lenses, it is still limited by lens aberration and electron diffraction. Both are inevitable in practical electron optics. Therefore, a further reduction in resolution by improving SEM hardware seems difficult. In order to overcome this difficulty, computer deconvolution has been proposed for SEM images. In the present work, the SEM image is deconvoluted using the electron beam profile estimated from beam optics calculation. The results show that the resolution of the deconvoluted image is improved to one half of the resolution of the original SEM image.     

Third International Congress for Stereology

This article gives a survey of the actual experience with the relatively new technique of photo-emission electron microscopy. After describing the principal technique and the features of a modern high resolution instrument, the questions of image generation, contrast formation and resolution are considered. In particular the influence of the depth of information on resolution for flat polished sections is studied and some comparisons with the scanning electron microscope (SEM) are made.* The different fields of application of the photo-EEM are shown by examples.     

Feature evaluation of complex hysteresis smoothing and its practical applications to noisy SEM images

Quality of a scanning electron microscopy (SEM) image is strongly influenced by noise. This is a fundamental drawback of the SEM instrument. Complex hysteresis smoothing (CHS) has been previously developed for noise removal of SEM images. This noise removal is performed by monitoring and processing properly the amplitude of the SEM signal. As it stands now, CHS may not be so utilized, though it has several advantages for SEM. For example, the resolution of image processed by CHS is basically equal to that of the original image. In order to find wide application of the CHS method in microscopy, the feature of CHS, which has not been so clarified until now is evaluated correctly. As the application of the result obtained by the feature evaluation, cursor width (CW), which is the sole processing parameter of CHS, is determined more properly using standard deviation of noise Nσ. In addition, disadvantage that CHS cannot remove the noise with excessively large amplitude is improved by a certain postprocessing. CHS is successfully applicable to SEM images with various noise amplitudes. SCANNING 35:292‐301, 2013. © 2012 Wiley Periodicals, Inc     

Use of backscattered electron detector arrays for forming backscattered electron images in the scanning electron microscope

The backscattered electron (BSE) signal in the scanning electron microscope (SEM) can be used in two different ways. The first is to give a BSE image from an area that is defined by the scanning of the electron beam (EB) over the surface of the specimen. The second is to use an array of small BSE detectors to give an electron backscattering pattern (EBSP) with crystallographic information from a single point. It is also possible to utilize the EBSP detector and computer-control system to give an image from an area on the specimen--for example, to show the orientations of the grains in a polycrystalline sample ("grain orientation imaging"). Some further possibilities based on some other ways for analyzing the output from an EBSP detector array, are described.     

Theoretical study of the ultimate resolution of SEM

This work aims to clarify the problem of why the ultimate resolution assessed experimentally from the observation of 0.8 nm separation of Au-Pd fine particles is beyond the theoretical resolution limit of scanning electron microscopy (SEM). The correlation between the spatial distribution of secondary electrons on a sample surface and the resolution estimated by edge-to-edge separation in SEM was studied by a Monte Carlo simulation with secondary electron generation included. The result clearly indicates that the edge-to-edge separation can extend beyond the theoretical ultimate resolution, particularly by image processing for contrast expansion and by improving the signal to noise ratio (S/N).     

Are the core structures of dislocations and grain boundaries resolvable by HREM?

Linear or planar defect structures have been recently studied by high resolution electron microscopy (HREM). Defects are generally difficult to solve for several reasons: they are non-periodic and their images are limited to a very few projections along low index axes. For edge dislocations in materials having a high lattice friction, image analysis is possible and relatively fine details are now available about core radii and location of the atom pairs. The accuracy, however, of the proposed structures is within ± 0·025 nm if a priori information is known. This is not always sufficient to distinguish between several models. For a high angle tilt grain boundary the situation is comparable. A discussion of the errors introduced by several factors (object orientation, optical axis alignment) and measurement of experimental parameters is presented. At present all the information content of an image is not used: intensity profiles and quantitative comparison of simulated and experimental images should provide better ways for solving an unknown structure. However, the improvement of the point resolution is the key factor for further progress in defect analysis.     

Nanotip electron gun for the scanning electron microscope

Experimental nanotips have shown significant improvement in the resolution performance of a cold field emission scanning electron microscope (SEM). Nanotip electron sources are very sharp electron emitter tips used as a replacement for the conventional tungsten field emission (FE) electron sources. Nanotips offer higher brightness and smaller electron source size. An electron microscope equipped with a nanotip electron gun can provide images with higher spatial resolution and with better signal-to-noise ratio. This could present a considerable advantage over the current SEM electron gun technology if the tips are sufficiently long-lasting and stable for practical use. In this study, an older field-emission critical dimension (CD) SEM was used as an experimental test platform. Substitution of tungsten nanotips for the regular cathodes required modification of the electron gun circuitry and preparation of nanotips that properly fit the electron gun assembly. In addition, this work contains the results of the modeling and theoretical calculation of the electron gun performance for regular and nanotips, the preparation of the SEM including the design and assembly of a measuring system for essential instrument parameters, design and modification of the electron gun control electronics, development of a procedure for tip exchange, and tests of regular emitter, sharp emitter and nanotips. Nanotip fabrication and characterization procedures were also developed. Using a "sharp" tip as an intermediate to the nanotip clearly demonstrated an improvement in the performance of the test SEM. This and the results of the theoretical assessment gave support for the installation of the nanotips as the next step and pointed to potentially even better performance. Images taken with experimental nanotips showed a minimum two-fold improvement in resolution performance than the specification of the test SEM. The stability of the nanotip electron gun was excellent; the tip stayed useful for high-resolution imaging for several hours during many days of tests. The tip lifetime was found to be several months in light use. This paper summarizes the current state of the work and points to future possibilities that will open when electron guns can be designed to take full advantage of the nanotip electron emitters.     

Digital image processing of combined SEM and EDX signals

Due to the complexity of biological tissue and man-made materials, the limits of light microscopy in quantitative image analysis are often reached. The scanning electron microscope provides a much higher resolution in such situations, especially when using the low noise secondary electrons signal. However, secondary electrons are sensitive to topography rather than to the elements constituting the specimen. This effect usually makes discrimination of distinct phases or objects by simple grey value thresholding difficult or even impossible. The additional information given by an energy dispersive X-ray system is the step to overcome this problem. The combination of both signals—grey level and energy dispersive information—leads to a masking procedure which eliminates image sections, not belonging to the phase under investigation, from the evaluation.     

Enhanced EDX images by fusion of multimodal SEM images using pansharpening techniques

The goal of this paper is to explore the potential interest of image fusion in the context of multimodal scanning electron microscope (SEM) imaging. In particular, we aim at merging the backscattered electron images that usually have a high spatial resolution but do not provide enough discriminative information to physically classify the nature of the sample, with energy‐dispersive X‐ray spectroscopy (EDX) images that have discriminative information but a lower spatial resolution. The produced images are named enhanced EDX. To achieve this goal, we have compared the results obtained with classical pansharpening techniques for image fusion with an original approach tailored for multimodal SEM fusion of information. Quantitative assessment is obtained by means of two SEM images and a simulated dataset produced by a software based on PENELOPE.