On the extraction of PiN diode design parameters for validation of integrated power converter design

Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.     

Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part II: Parameter Extraction

In this paper, a parameter extraction procedure for high-voltage diodes with local lifetime control is proposed. It is designed for use with the physics-based diode model described in Part I, which is capable of simulating diodes with local lifetime control. The parameter extraction procedure described requires a forward characteristic and a reverse recovery measurement. The parameter extraction procedure is illustrated using finite-element simulations. The physics-based model using the parameters extracted is then compared with experimental results.     

Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters

Feedback control of insulated gate bipolar transistors (IGBTs) in the active region can be used to regulate the device switching trajectory. This facilitates series connection of devices without the use of external snubber networks. Control must be achieved across the full active region of the IGBT and must balance a number of conflicting system goals including diode recovery. To date, the choice of control parameters has been a largely empirical process. This paper uses accurate device models and formalized optimization procedures to evaluate IGBT active voltage controllers. A detailed optimization for the control of IGBT turn-on is presented in this paper     

A new approach for nonlinear distortion correction in endoscopicimages based on least squares estimation

Images captured with a typical endoscope show spatial distortion, which necessitates distortion correction for subsequent analysis. In this paper, a new methodology based on least squares estimation is proposed to correct the nonlinear distortion in the endoscopic images. A mathematical model based on polynomial mapping is used to map the images from distorted image space onto the corrected image space. The model parameters include the polynomial coefficients, distortion center, and corrected center. The proposed method utilizes a line search approach of global convergence for the iterative procedure to obtain the optimum expansion coefficients. A new technique to find the distortion center of the image based on curvature criterion is presented. A dual-step approach comprising token matching and integrated neighborhood search is also proposed for accurate extraction of the centers of the dots contained in a rectangular grid, used for the model parameter estimation. The model parameters were verified with different grid patterns. The distortion-correction model is applied to several gastrointestinal images and the results are presented. The proposed technique provides high-speed response and forms a key step toward online camera calibration, which is required for accurate quantitative analysis of the images.     

一种有机发光二极管的电路仿真宏模型

文章介绍了一种有机发光二极管的电路仿真宏模型及其元件参数数值的提取方法。该电路仿真宏模型不但表征了有机发光二极管的全固态多层结构,而且表征有机发光二极管发光的物理过程。同时还提出了采用交流阻抗法提取该有机发光二极管电路仿真宏模型的元件参数的方法。该有机发光二极管的电路仿真宏模型可用于有源二极管显示器的背板电路设计过程中,背板电路与有机发光二极管器件的联合电路功能仿真,从而实现更准确的背板电路性能评估。     

MOSFET和Poly-Si TFTs参数提取策略的研究

随着半导体制造技术的不断改善和工艺的不断升级,精确的模型参数对于代工厂和设计者尤为重要.而参数提取策略的选择是整个参数提取过程中的关键步骤.该研究以伯克利大学开发的SPICE Level-3 MOSFET和多晶硅薄膜晶体管模型为研究对象,以包括了短沟效应、窄沟效应、漏致势垒降低效应的MOSFET阈值电压方程和多晶硅薄膜晶体管统一漏电流方程作为研究出发点,然后分别讨论了模型中几个主要参数的提取方法,最后给出了参数提取的流程图.     

Investigation of artificial neural network algorithm based IGBT online condition monitoring

Reliability of Insulated Gate Bipolar Transistor (IGBT) has drawn much attention in recent years. Online monitoring of IGBT is an effective mehod to improve IGBT operation reliability. State-of-the-art online monitoring methods for IGBT are based on thermal sensitive electrical parameters (TSEPs) extraction, but the TSEPs can be hardly obtained with required accuracy in practical application. This paper investigates Artificial Neural Network (ANN) based IGBT online monitoring method. DC link voltage and H-bridge output voltage, which are practical measurable parameters, are selected as the input of ANN. Both single input single output (SISO) and multiple input single output (MISO) neural networks are analysed and discussed. With the proposed method, the relationship of the practical measurable parameters and investigated TSEP, on-resistance of IGBT, can be established. By applying the existing criterion of TSEPs for the IGBT reliability, the prediction of the IGBT failure can be achieved. Simulations verify that the errors brought by the established model are within precision requirements.     

基于高压IGBT暂态机理模型的分析与研究

随着绝缘栅双极性晶体管（IGBT）使用的电压等级越来越高,关于绝缘栅双极性晶体管（IGBT）开关暂态的研究显得尤为重要。在机理模型的基础上能细划分为MOSFET与BJT,即金属氧化层半导体场效晶体管与双极结型晶体管两个部分,对其进行建模,列举出模型参数提取方法。该模型可在Matlab中实现,把IGBT作为案例列出模型参数数值,分析比较高压开通暂态、关闭暂态与开关损耗仿真结果,以此检验机理模型对高压IGBT是否适用。     

Method for photovoltaic parameter extraction according to a modified double‐diode model

The variables presented in the current–voltage equation of a photovoltaic (PV) device are usually called PV parameters. There are several different methods for PV parameter extraction from measured data according to different models. However, many of these methods provide results that do not represent I–V curves of thin films devices correctly. This can occur because either the applied model or the PV parameter extraction methods are not suitable. It is also possible that the extracted parameters provide a good mathematical representation of the curves but without physical meaning (e.g. negative series resistance). This work presents a method for PV parameter extraction based on a modified double‐diode model. In this model, the ideality factor related to the recombination of the charge carriers in the space‐charge region is assumed as a variable. This method has been tested for different I–V curves of different PV module technologies providing very good results and parameters with physical meaning in all the cases. Copyright © 2012 John Wiley & Sons, Ltd.     

1200V场终止型绝缘栅双极晶体管的ADE物理建模及参数提取

绝缘栅双极晶体管（IGBT）是微电子学研究的热点之一,而相关电路仿真迫切需要该器件的等效模型.本文提出基于傅里叶解双极扩散方程（ADE）的1200V场终止型IGBT物理模型,通过RC电路等效漂移区载流子分布,精确求解双极扩散方程.该模型针对大功率IGBT的工作原理,采用大注入假设条件,在综合分析场终止层的同时,根据1200V场终止型IGBT的特点考虑漂移区载流子的复合效应.在提取器件模型所需的关键参数后,用实际IGBT的测量结果对该模型的仿真结果进行了验证,通过分析静态以及关断瞬态特性曲线,仿真与实验数据误差均值小于8%,证明所建模型及参数提取方法的精确度.     

A thermal model for insulated gate bipolar transistor module

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.     

A design-oriented methodology for accurate modeling of on-chip interconnects

An accurate modeling methodology for typical on-chip interconnects used in the design of high frequency digital, analog, and mixed signal systems is presented. The methodology includes the parameter extraction procedure, the equivalent circuit model selection, and mainly the determination of the minimum number of sections required in the equivalent circuit for accurate representing interconnects of certain lengths within specific frequency ranges while considering the frequency-dependent nature of the associated parameters. The modeling procedure is applied to interconnection lines up to 35 GHz obtaining good simulation-experiment correlations. In order to verify the accuracy of the obtained models in the design of integrated circuits (IC), several ring oscillators using interconnection lines with different lengths are designed and fabricated in Austriamicrosystems 0.35 μm CMOS process. The average error between the experimental and simulated operating frequency of the ring oscillators is reduced up to 2% when the interconnections are represented by the equivalent circuit model obtained by applying the proposed methodology.     

基于大功率逆变器IGBT开关瞬态电压、电流波形的杂散参数抽取方法

由于线路杂散电感的存在,IGBT（insulated gate bipolar transistor）开通关断时将在开关管两端产生电压尖峰。为了研究其的影响,需要对线路杂散电感进行抽取。为此,本文提出一种基于IGBT开关瞬态电压、电流波形的杂散参数抽取方法。在IGBT的开通过程中,考虑了IGBT反并联二极管的反向恢复过程,井且利刖加该过程引起电压尖峰进行线路的杂散电感的抽取;在IGBT的关断过程中,通过对关断波形进行了更详细的分析,给出更精确的线路杂散电感的抽取方法。最后,将该方法应用于一台75kVA的单相逆变器;实验结果证明了本方法的有效性与正确性。     

A comparison of IGBT models for use in circuit design

In choosing an accurate insulated gate bipolar transistor (IGBT) model for power electronic circuit design, physics-based models are frequently preferred due to their high accuracy and fast simulation speed in comparison to other types of models. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on two particular IGBTs-the BUP202 and the BUK854-representing the two common types of IGBT, respectively, the nonpunchthrough and the punchthrough IGBT. The models are investigated for the IGBT's operation in three situations typical of low-power (600 V, 10 A) applications     

利用I2V 正向特性提取PN 二极管主要参数的研究

研究了利用电流－电压（I－V）正向特性提取PN结二极管参数的方法，与通常使用的PN结二极管模型不同，本文模型考虑了并联电导对电流的影响，在I－V特性曲线上读取四级（V，I）值，用牛顿法对模型方程组进行数值求解，可提取出PN结二极管的主要参数：反向饱和电流，串联电阻，发射系数以及并联电导。结果表明，该方法简便，实用。     

Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance model

A straightforward method for extracting the base and emitter resistances is presented. The method has the following properties: 1) only a standard forward Gummel measurement on one transistor is required; 2) current-crowding and conductivity-modulation in the base are accounted for through the use of an accurate base resistance model; and 3) the resistance parameters are extracted using a nonlinear optimization step. Furthermore, a technique for extraction of the high-injection parameters of a modified collector current model is also presented.     

IGBT junction and coolant temperature estimation by thermal model

The capability of IGBT (Insulated Gate Bipolar Transistor) to handle heat is one of its main limitations of high power application. This paper aims to study an IGBT thermal model under flow cooling condition and estimate the IGBT module junction and coolant temperature. Firstly, this paper studies the IGBT module internal sandwich structure and calculates the thermal resistance and thermal capacitor for each layer using a 1D physical model. Then a Cauer electric model is built for the IGBT module to evaluate the thermal constant time of the model. The liquid cooling method is applied in this project for fast cooling and the thermal parameters are studied and measured since this cooling method involves both solid and liquid. In order to estimate the junction temperature, the sensing temperature from NTC (Negative temperature coefficient) resistor inside the module is used as reference temperature. The equivalent thermal models, also named Foster model, from both junction to NTC and NTC to coolant are built, respectively. With these thermal models, the junction and coolant temperature estimation methods are derived. For the purpose of making the estimation accurate, the thermal coupling effect is carefully studied. Finally, the thermal model is verified by inverter application with current steps sweeping; the estimated temperature is compared with thermal camera measurement result which demonstrates good accuracy of the thermal model. The estimated coolant temperature is also well matched with thermocouple measurement result.     

Stepping toward standard methods of small-signal parameterextraction for HBTs

An improved HBT small-signal parameter extraction procedure is presented in which all the equivalent circuit elements are extracted analytically without reference to numerical optimization. Approximations required for simplified formulae used in the extraction routine are revised, and it is shown that the present method has a wide range of applicability, which makes it appropriate for GaAs and InP-based single and double HBTs. Additionally, a new method is developed to extract the total delay time of HBTs at low frequencies, without the need to measure h₂₁ at very high frequencies and/or extrapolate it with -20 dB/dec roll-off. The existing methods of finding the forward transit time are also modified to improve the accuracy of this parameter and its components. The present technique of parameter extraction and delay time analysis is applied to an InGaP/GaAs DHBT and it is shown that: (1) variations of all the extracted parameters are physically justifiable; (2) the agreement between the measured and simulated S- and Z-parameters in the entire range of frequency is excellent; and (3) an optimization step following the analytical extraction procedure is not necessary. Therefore, we believe that the present technique can be used as a standard extraction routine applicable to various types of HBTs     

Large-Signal Diode Modeling—An Alternative Parameter-Extraction Technique

An alternative numerical optimization method of large-signal equivalent-circuit diode modeling using dc and small-signal$S$-parameter measurements is described. In general, there are two ways to extract the equivalent-circuit parameters to model a nonlinear device such as a diode. They are based on numerical optimization or noniterative analytical procedure. The former is usually better in approximating the device response. Nevertheless, it requires arbitrary selection of a voltage-dependent$S$-parameter set to obtain the voltage-independent parameters. In this alternative numerical optimization method, an arbitrary selection of a voltage-dependent$S$-parameter set to obtain the voltage-independent parameters is not required. Validation of this parameter-extraction technique is done via modeling a forward-biased tunnel diode and a reverse-biased varactor diode. The models are further verified by implementing them in designing and developing an oscillator and a voltage-controlled oscillator.     

跨谱段SAR散射中心多维参数解耦和估计方法

微波光子雷达发射大带宽跨谱段的信号,为目标的精细电磁特性描述和准确识别提供基础的同时,也亟需与之相应的大带宽大转角情况下的电磁模型参数提取方法。相比窄带条件,跨谱段信号数据量大,所含物理量信息维度高且复杂,大转角情况下距离和方位向耦合。该文提出跨谱段SAR散射中心多维参数解耦和估计方法,首先结合极坐标格式算法(PFA)和属性散射中心模型构造2维解耦波数域散射中心模型,再结合坐标下降法(CDA)将复杂的高维耦合参数估计方法简化为循环迭代的1维参数估计方法,有效降低字典维度和估计复杂度,并引入Hooke-Jeeves算法提高估计精度。最后根据各个散射中心的参数估计结果对它们的结构和位置进行识别,对仿真数据的处理实验验证了该文方法的有效性。