基于Eclipse属性编辑工具的研究

Eclipse基于Java提供了一个可扩展开发平台,允许软件以插件的形式在其上运行,由Eclipse来提供统一的、美观的图形界面。而Eclipse RCP是使用Eclipse结构风格设计弹性的可扩展的应用程序,可重用Eclipse中已存在的方法和编码模式。GEF是一个图形化编辑框架,它允许开发人员以图形化的方式展示和编辑模型。这里采用了Eclipse RCP和GEF的相关技术,结合RCP中的插件技术和GEF中提供的图形编辑工具及请求、命令、策略等技术实现了属性编辑工具。     

网格计算平台GBuilder的设计研究

针对GT3对网格开发存在的不足，提出了基于开放源码的开发工具Eclipse平台，通过相应的面向对象方法学知识，以插件形式来封装对OGSA标准的事务调度，构建网格计算平台GBuilder，使用户开发网格服务实现可视化操作。主要工作包括基于GT3开发网格服务流程的设计、网格计算平台GBuilder的体系结构设计和功能描述、以及设计该平台的支撑软件Eclipse和EMF插件的介绍。     

基于RCP与GEF的组织结构图的设计与实现

文章在介绍Eclipse RCP技术平台和GEF框架的基础上,基于MVC模式设计并实现了一种轻量级的企业组织结构图系统。采用GEF图形框架开发的软件具有结构清晰、可维护性高和代码重用性强等优点。GEF框架为仪器仪表的用户接口、图形编辑软件的开发提供了一个理想的解决方案。     

基于元模型的视图层PIM建模方法

模型驱动架构的核心思想是将建模语言当作开发语言使用,基于UML的平台无关模型建模方法主要关注于系统的体系结构与业务逻辑设计,对视图层支持较差。研究基于元模型的视图层PIM建模方法,给出视图层PIM模型中界面逻辑模型和界面布局模型的表示法及语义内容;基于EMOF元模型对UML建模语言进行扩展;使其对上述两种模型提供语义上和表示法的支持,最后基于Eclipse GMF框架开发了视图层PIM辅助设计工具GMTP。     

基于RePast仿真平台的矿井逃生模型

基于RePast的仿真平台可以很好地实现计算机仿真,因此可以用来对矿井逃生进行仿真研究。本文采用基于Java的Eclipse开发平台和RePast建模仿真软件构建模型的运行平台,建立了矿井逃生仿真模型,用来模拟井下工作人员在遭遇火灾时的逃生情况,结果表明,利用这一模型能够较好地实现逃生仿真。     

基于GEF的业务模式图形编辑器的设计与实现

业务模式是根据客户需求而制定的一些规则和方法。改变传统手工编织代码来实现这些规则和方法,通过设计业务模式图形编辑器将这些规则和方法图形化使得项目开发效率更高。GEF提供了标准程序结构和组件框架,缩短了开发时间并提供了一致性的外观模型,GEF也提供了标准的开发框架,为图形编辑器的设计提供了基础组件,并进一步研究运用了框架中的命令设计模式,可以很容易地实现撤消/重做等功能。在此基于Eclipse平台和GEF架构设计和实现业务模式图形编辑器,提高开发效率和软件的可维护性。     

基于Eclipse平台的软件建模工具综述

Eclipse是一个开源平台,允许集成了众多开发插件。本文从软件建模的角度出发,介绍了最新的软件建模工具插件及特点,分析了软件建模过程。为广大涉及软件建模的研究和工作人员提供一个相关工具的汇总说明和指导。     

基于GEF和EMF的JavaEE快速开发工具设计

讨论了基于GEF和EMF技术的JavaEE应用快速开发工具,即jStudio。该工具是一个桌面程序,采用MDA模型驱动开发。通过可视化、图形化的编辑器建立业务模型对象,生成增、删、改、查等所有代码,并能够自动编译、自动发布和部署及同步更新数据库,能够快速高效地自动生成基于Struts＋Spring＋Hibernate框架的JavaEE应用系统和构件。实践检验表明,jStudio能极大地提高软件开发效率和生产力,加快软件价值的实现。     

Android平台的即时通信系统客户端设计方案

为解决在基于Linux操作系统的Android手机平台上即时通信问题,实现在系统客户端进行文本、图片、音乐的传送和播放。采用Java语言环境下Android应用开发工具和API接口,并使用Eclipse加上Android集成开发环境插件为手段,对客户端架构、应用模块框架、数据存储、主要功能和核心模块开发技术等全方面分析,从而提供了实现即时通信系统的客户端解决方案。     

基于DSL的MES系统建模平台的设计与实现

给出了一种适用于MES系统的建模平台的设计方法。该平台能够将业务需求通过友好的图形化用户交互界面转化为模型,从而实现各种业务模块功能的建模配置,此外,该平台也可根据模型生成基于SOA的运行代码,在系统运行平台上运行。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.