微波3dB微带双分支定向耦合器的小型化

分析理论上的3dB微带双分支线定向耦合的S参量特性。在此基础上,用接开路线的方法对标准3dB微带双分支线定向耦合器小型化,用奇偶模分析方法分析理论S参量特性,应用微带电路仿真软件ADS进行仿真,比较理论分析计算绘制的S参量特性曲线与仿真获得的S参量特性曲线,设计出小型化的微波频域3dB微带双分支线定向耦合器。     

小型化高方向性的微带双定向耦合器设计

为解决弱耦合时微带平行耦合线定向耦合器方向性低的问题,提出了适用于大功率场合的小型化高方向性微带双定向耦合器。基于传统四分之一波长平行耦合三线微带双定向耦合器结构,采用扇形微带电容加载可明显减小耦合器尺寸并增大隔离度,通过耦合边缘引入锯齿结构进一步提高了方向性。负载电阻采用扇形微带短截线接地设计,避免电气化过孔,使得加工更加简单。设计了一个中心频率为915 MHz、耦合度为20 dB 的微带双定向耦合器,利用HFSS 仿真软件对耦合器结构进行优化设计,并做了实物加工和测试。实测结果表明,在中心频率处耦合度为20.2 dB,方向性达到32.1 dB;在0.74~1.35 GHz 频带内,输入匹配良好,耦合度波动小于0.5 dB,方向性高于20 dB。     

Ka波段3dB定向耦合器的设计与仿真

定向耦合器广泛地用在现代微波系统中,文中介绍了两种应用在平衡式放大器中的3dB定向耦合器。首先对微带分支线耦合器与波导耦合器进行了理论分析,然后利用电磁仿真软件HFSS,对两种耦合器进行了建模仿真。仿真结果验证了这两种定向耦合器的可实现性,最后比较了两种耦合器的性能,并且总结了各自的特点。     

Ka波段3dB定向耦合器的设计与仿真

定向耦合器广泛地用在现代微波系统中,文中介绍了两种应用在平衡式放大器中的3dB定向耦合器。首先对微带分支线耦合器与波导耦合器进行了理论分析,然后利用电磁仿真软件HFSS,对两种耦合器进行了建模仿真。仿真结果验证了这两种定向耦合器的可实现性,最后比较了两种耦合器的性能,并且总结了各自的特点。     

微带分支线定向耦合器的小型化

基于尺寸原因定向耦合器在微波电路中的应用受到限制,采用接终端开路短截线的方法使四分之一波长的微带线变成T型结构,并进一步对短截线等效成为十字型微带线的方法,设计出小型化的定向耦合器。通过使用ADS软件进行仿真,设计的定向耦合器各项性能指标符合要求,面积为常规微带分支线定向耦合器的36%。     

一种结构新颖的小型化微带分支线定向耦合器

提出一种通过小型化而制作出的具有新型结构的微带分支线定向耦合器,其中小型化运用了将传统的传输线等效为传输线两端接终端开路线达到缩短目的,得到的主线与分支线之间的终端开路线可继而等效为传输线两边接短截线形式以避免终端开路线的重叠,从而最终得到一种新的结构。与传统耦合器相比面积缩小了64%。通过理论计算得到的频率特性与ADS仿真得到的频率特性基本一致,从而验证了可行性。     

一种新型小型化双频分支线耦合器的设计

设计了一款新型的小型化双频分支线耦合器。通过在端口处加载一段扩展的传输线实现分支线耦合器的双频工作。使用微带过渡结构连接不同介质层中的两个微带线电路以降低耦合器的尺寸。利用传输线理论将传统的λ/4 传输线等效为T 型传输线结构,并将端口处的扩展部分进行折叠处理,达到进一步缩减器件尺寸的目的。本文设计了一个工作频率在0. 97/1. 8GHz 的双频分支线耦合器,并进行实物加工,仿真结果性能良好,实测与仿真数据非常吻合。     

一种基于微带均衡器结构的定向耦合器的研究

提出了一种新颖的基于微带均衡器结构的宽频带高定向性微带线定向耦合器,并对该结构进行了理论分析、设计、制作和测量。该结构的新颖之处是通过对耦合度随频率的变化曲线进行均衡得到宽频带特性。该结构采用三电容补偿的微带线定向耦合器结构,并通过在耦合端集成微带均衡器结构实现。测量结果显示,该结构在2.5～3.5GHz工作频带内的耦合度随频率的变化范围约为1dB,隔离度低于-34dB,较之传统结构的微带线定向耦合器均有大幅的提高。测量结果很好地验证了设计方法的正确性。     

一种新型Ka频段六路功率分配/合成网络

指出了二进制(2n)功率合成方式的不足,介绍了波导—微带探针过渡和3 dB分支波导定向耦合器的原理。提出了改进型分支波导三路功率分配器,该结构具有损耗低、驻波好、幅度相位一致性好和端口隔离度高等优点。针对现有合成方式的不足,提出了一种新型基于波导的Ka频段六路功率分配/合成网络,该结构由改进型分支波导三路功率分配器、3 dB分支波导定向耦合器和E面波导—微带探针过渡组成。     

微带混合环定向耦合器计算机辅助设计

本文介绍了用奇偶模和场匹配法分析微带混合环定向耦合器特性的方法,并编制了软件对微带混合环定向耦合器S参数进行优化。利用编制的优化软件设计了一个3公分微带定向耦合器和5.9GHz功分器,测试结果和计算结果吻合得相当好。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.