Anomalous elastic properties of RF-sputtered amorphous TeO2+x thin film for temperature-stable SAW device applications.

The anomalous elastic properties of TeO2+x thin films deposited by rf diode sputtering on substrates at room temperature have been studied. The deposited films are amorphous, and IR spectroscopy reveals the formation of Te-O bond. X-ray photoelectron spectroscopy confirms the variation in the stoichiometry of TeO2+x film from x=0 to 1 with an increase in the oxygen percentage in processing gas composition. The elastic parameters of the films in comparison to the reported values for TeO2+x single crystal are found to be low. However, the temperature coefficients of elastic parameters of all deposited films exhibit anomalous behavior showing positive values for TC(C11) in the range (32.0 to 600.0)x10(-4) degrees C(-1) and TC(C44)=(35.0 to 645.5)x10(-4) degrees C(-1) against the negative values TC(C11)=-2.7x10(-4) degrees C(-1) and TC(C44)=-0.73x10(-4) degrees C(-1) reported for TeO2+x single crystal. The variation in the elastic parameters and their temperature coefficients is correlated with the change in the three-dimensional network of Te-O bonding. The anomalous elastic properties of the TeO2+x films grown in 100% O2 are useful for potential application in the design of temperature stable surface acoustic wave devices.     

Solubility of Fullerenes C60 and C70 in Seven Normal Alcohols and Their Deduced Solubility in Water

The solubilities of C₆₀ and C₇₀ at 25°C in seven normal alcohols obey the relationship InY = a + bX + cX², where Y is solubility and X is the Hildebrand solubility parameter of the solvent. Extrapolation to the solubility parameter of water yields solubilities in water of 1.3'10^-11 (C₆₀) and 1.3'10^-10(C₇₀) ng/ml with an uncertainty of one order of magnitude.     

The shear coefficient for quartz crystal of rectangular crosssection in Timoshenko's beam theory

In this paper, we derive the shear coefficient K for quartz crystal of rectangular cross section in Timoshenko's beam theory of three-dimensional (3-D) elasticity. The theoretical result gives K as a function of the transformed elastic stiffness constants C₂₂ ^', cˆ₄₄, C₆₆'. For an isotropic material it agrees completely with that derived by G.R. Cowper (1966). In addition, a value of K and its temperature coefficient versus cut angle is calculated so that K has a value of 0.796-0.867 and its temperature coefficient of the first order varies from -15.3×10 ^-6/°C to +13.2×10^-6/°C, when a Z-plate of quartz crystal is rotated with a cut angle &thetas; of 0-180° about the x axis. The values of K are then compared with those for isotropic materials obtained by other authors     

The Rectification Studies on the P -Ion Implanted C60/Si Films

N-type doping of the C₆₀ films deposited on Si substrates has been achieved by 80 keV P⁺-ion implantation with doses of 2×10¹⁴ cm^-2 at room temperature. The heterostructures composed of the n-type doped C₆₀ films and n- or p-type Si(111), Si(100) substrates are studied in view of semiconductor heterojunctions. The rectification and other electrical characteristics of the P⁺-ion implanted n-C₆₀/n-(p-)Si heterostructures are disclosed by the current-voltage (I-V) measurements at room temperature. The n-C₆₀/p-Si heterostructures show stronger rectification than n-C₆₀/n-Si heterostructures and Si(111) substrates are found to be more suitable for forming n-C₆₀/Si heterostructures than Si(100) substrates.     

纳米晶体钛基掺钽TiO2薄膜的摩擦磨损性能

采用室温直流反应磁控溅射技术在纳米晶体钛表面制备掺钽TiO2薄膜,研究了掺Ta量对纳米晶体钛基TiO2薄膜摩擦磨损性能的影响。结果表明：在室温模拟人体体液条件下,掺钽TiO2薄膜与不锈钢淬火钢球（Φ4mm）对摩的磨损率为10^-6-10^-5mm^3·m^-1 N^-1级;随着Ta含量的增加,薄膜的摩擦系数和磨损率呈先...     

INHIBITORY EFFECTS OF FULLERENE C60 DERIVATIVES ON ENDOTHELIUM-DERIVED RELAXATION IN RABBIT THORACIC AORTA

Inhibitory effects of newly synthesized fullerene C₆₀ derivatives 1 (C₆₀-bis(N,N-dimethylpyrrolidinium iodide)), 2 (C₆₀-proline-N-acetic acid) and 3 (C₆₀-ethylenediamine-N, N'-diacetic acid) on acetylcholine-induced relaxation in endothelium-intact rabbit thoracic aorta precontracted by phenylephrine (10^-6 M) were studied. Fullerene C₆₀ derivative 1 (3 × 10^-6 M), 2 (10^-5 M) and 3 (10^-5 M) reduced the maximum amplitude of the acetylcholine-induced relaxation without significantly changing the pD₂ values obtained from the concentration - response curves. In the presence of fullerene C₆₀ derivative 1 (10^-5 M) the acetylcholine-induced relaxation was eliminated and an acetylcholine-induced contraction was observed. These results suggest that fullerene C₆₀ derivative 1 strongly inhibits endothelium (nitric oxide)-dependent acetylcholine-induced relaxation in thoracic aorta of rabbit.     

Ni2O3对C3S形成过程的影响及其固溶效应

C3S是水泥熟料中最重要的矿物,杂质离子固溶进入C3S晶格并促进其单斜型或三方型稳定存在,研究离子在C3S中的固溶作用机理,能更深入了解阿利特的微结构及性质。利用化学分析、XRD、DTA及相图分析,研究Ni2O3对C3S形成过程的影响及其固化效应。结果表明:Ni2O3主要以+2价的形式在CaO-Si O2二元体系中存在,因其优先与Si O2反应形成固溶体,f-CaO随Ni2O3掺量递增而增大;当Ni2O3掺量大于其CaO-Si O2二元体系固溶极限时,f-CaO变化趋势呈相反趋势,且促进C3S形成效应明显。通过最小二乘法及Ni2O3固溶度的精确界定,可推导出Ni2O3在C3S中的固溶反应分子式为:(Ca3-0.53xNi0.53x)(Si1-0.47xNi0.47x)O5(x=0.0442)。     

Thermally Activated Decay Processes of Isolated Superhot C60 in Molecular Beams

We have studied thermally activated decay processes of an ensemble of isolated superhot C₆₀ molecules in molecular beams by several different methods. Highly vibrationally excited C₆₀ molecules in effusive or supersonic beams (with average vibrational energy of 10-20 eV) were generated in an all ceramic, two-stage high temperature nozzle source. the decay kinetics due to various decay processes of the initially canonical ensemble was followed by a mass spectrometric methods for a large range of initial temperatures (T_o=1100 - 1950 K). the processes studied are: (1) fragmentation (C₂ emission) of the neutral C₆₀ (2) C₂ emission from the C⁺₆₀ ions (3) black-body like radiative cooling, and (4) delayed electron emission. the experiments described here are: (a) Depletion of the integrated C₆₀ flux. (b) Analysis of C₆₀ time-of-flight distributions. (c) Dependence of electron impact induced ionization/ fragmentation of C₆₀ upon its initial thermal excitation, and (d) Thermal energy dependence of delayed electron emission. It is shown that thermal kinetics models using a single set of independently measured parameters uniquely reproduce all the experimental observations. the models take into account the different cooling processes and their time evolution. We analyze in detail the evolution of the initially canonical vibrational energy distribution during the flight time to the detector as it is gradually being distorted due to evaporative and radiative cooling mechanisms. It is concluded that the correct parameters to be used for describing the thermally activated decay kinetics of superhot C₆₀ are activation energy of E_o = 4.3 - 4.8 eV for the neutral fragmentation channel C₆₀ → C₅₈ + C₂ and E₁=4.0 - 4.3 for the ion fragmentation channel C⁺₆₀→ C⁺₅₈ + C₂, and corresponding pre-exponential factors of A_o = A₁ = 2.5 × 10¹³ sec^-1. the emissivity coefficient for black body like radiation was found to be ε = 4.5 × 10^-5.     

Structure and Defects in Thin C60 Films

Thin C₆₀ films were deposited by vacuum sublimation of soot on single-crystal and amorphous substrates. The absence of higher fullerenes was confirmed by IR, Raman and UV-VIS spectroscopy. X-ray diffraction revealed a high density of stacking faults (probabilities in the range 10^-2), correlated with lattice distortions. Analysis of the UV-VIS absorption bands yielded values of the h_u → t_1g and h_u → t_1u optical gaps.     

Preparation and characterization of C60S16 and C70S48 thin films

In this study, we have investigated different methods for preparation of thin films of C₆₀ and C₇₀-sulfur compounds. Films of good quality were obtained by reaction of amorphous C₆₀ and C₇₀ films with a saturated sulfur solution in toluene at 40°C or with saturated sulfur vapour at a temperature of 140°C for several hours. The quality of the fullerene-sulfur films were strongly dependent on the microstructure of the initially deposited fullerene film and the synthesis temperature. X-ray diffraction analyses showed that both methods lead to the formation of films consisting of C₆₀S₁₆ and C₇₀S₄₈ (space groups C 2/c and Amm2, respectively). C₆₀S₁₆ films synthesised on Al₂O₃(012) and Si(100) substrates were texture-free while C₇₀S₄₈ films typically exhibited a preferential (100) orientation. The films were also characterised by Raman and IR- spectroscopy, which confirmed that the interactions between the fullerene molecules and the S₈ rings are weak. The fullerene-sulfur compounds were found to be unstable at high vacuum conditions. Both materials C₆₀S₁₆ and C₇₀S₄₈ are non-conductive at room temperature with conductivities less then 10⁻⁵ (Ω/cm).     

He Ion Bombardment of C70 Fullerene: An FT-IR and Raman Study

C₇₀ fullerene films deposited on a silicon substrate have been bombarded with He⁺ ions at 30 keV at room temperature in vacuum. The structural changes undergone by C₇₀ have been followed by both FT-IR and Raman spectroscopy. The results have been compared to the behavior of C₆₀ fullerene and discussed in an astrochemical context. The main conclusion is that C₇₀, contrary to C₆₀, does not form oligomers at low radiation dose but it is directly and gradually degraded to amorphous carbon (carbon black).     

An electron diffraction study of the ZnIn2Se4 crystal structure: A novel phase

A novel layered-structure ZnIn₂Se₄ phase has been obtained. Texture electron diffraction patterns aid in the identification of a crystal structure with lattice parameters a = 4.045 Å and c = 52.29 Å, space group R m, and z = 4.5. Crystal electron diffraction patterns displayed superstructural reflection, thus indicating a √3-fold increase in the a parameter. The similirity of reflection locations and intensities both on the crystal rotation electron diffraction pattern and on texture electron diffraction patterns showed that no phase transition occurred on specimen pounding. Electrophysical and optical parameters (E_g = 1.68 eV; N = 8 × 10²² m^-3; = 0.1Ωm) are studied at 300 K. The Hall coefficient is constant (R_H = 7.2 × 10^-5m³C^-1, mobility μ = 8 × 10^-3m²V^-1s^-1 at 200–300 K.     

Electron Microscopic Investigations of Transformations from C60 to Diamond, Filament and Microcapillary

We report the transformation of C₆₀ into diamond by electron beam pulse annealing of flash evaporated films (at 10^-6 torr) of C,₆₀, or by direct evaporation of C₆₀ in helium (100 torr) atmosphere. The formation of filament and microcapillaries (tubulene-like structures) by electron beam annealing of the C₆₀ deposit is also reported.     

C60 Films Formed by Ionized Cluster Beam Deposition: Structure and Doping by Ion Implantation

C₆₀ films were formed on a variety of substrates by ionized cluster beam (ICB) technique. Their structure was found to depend on the acceleration voltages and substrate. Then the Coo films were implanted by P⁺-ions with doses from 0—2×10¹⁴ ion/cm². The in situ measurement of electrical conductivity revealed an abrupt decrease of three orders in resistance. The temperature coefficient of resistivity of the P⁺-ion implanted C₆₀ film remained in a negative value.     

Ultrastable optical frequency reference at 1.064 μm using a C2HD molecular overtone transition

Saturated molecular overtone transitions in the visible and near infrared can be detected with record-high sensitivities using our cavity-enhanced frequency modulation technique. We have stabilized a Nd:YAG laser onto the P(5) line in (ν₂+3ν₃) overtone band of C₂HD at 1.064 μm and established its absolute frequency. Excellent signal-to-noise ratio produced an Allan variance of 3.4×10^-13 at 1 s averaging, improving to 1×10^-14 after 800 s. Selection of slow molecules with low power and gas pressure gave a linewidth 13 times below the room temperature transit time limit     

Temperature dependent luminescence in (Eu, Dy) doped tellurite glass

This short paper reports both the photoluminescence and the lifetime measurements of a prominent emission transition (⁵D₀→⁷F₂) of Eu³⁺ both in the presence and absence of the codopant rare earth ion (Dy³⁺) in an optical glass of the composition (79−x)TeO₂+6AlF₃+15LiF+xLn₂O₃ as a function of temperature down to 10 K.     

Effect of lead on formation and dielectric tunability of (Pbx,Sr1–x)0.85Bi0.1TiO3 thin films

(Pb_x,Sr_{1 x})_0.85Bi_0.1TiO₃ thin films with the perovskite phase structure were prepared on an ITO glass substrate by sol-gel method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and an impedance analyzer were respectively used in order to characterize the phase status, morphology and dielectric properties of the thin films. The results show that during the formation process of (Pb_x, Sr_{1 x})_0.85KBi_0.1TiO₃ thin films, the nucleus of the perovskite phase are initially formed and then congregated. These aggregated nucleus are then transformed as the perovskite-phase crystalline in the thin film. Finally, the crystalline phase grows and separates gradually to form the perfect crystalline-phase structure. The content of the perovskite phase formed in the thin film under rapid thermal process (RTP) is more than that formed under traditional heat treatment with kinetic equilibrium. This is due to the high active decomposed ions that form the perovskite phase directly when heat-treated by RTP. The formation of the perovskite phase therefore overcomes a much lower barrier under RTP than that under traditional calcinations. The structure of the perovskite phase has a close relation to the ratio of Pb/Sr in the system because of the radius difference between Pb²⁺ and Sr²⁺. The transformation temperature between the cubic and the tetragonal structures of the perovskite phase increases with increasing Pb²⁺ content because the radius of Pb²⁺ is larger than that of Sr²⁺. It appears at room temperature when the content of Pb²⁺/Sr²⁺ is about 40/60 in the thin film. Meanwhile, the tetragonality of the perovskite phase is increased when Pb²⁺ ions increase due to its high polarization. The higher tunability of the (Pb_x,Sr_{1 x})_0.85Bi_0.1TiO₃ thin film is exhibited when the film composition is close to the transformation point between the paraelectric and ferroelectric phases. Pb²⁺ions show a dominant factor to affect the Curie point of the system and then changing tunability.     

Formation of Transparent and Photo Conducting Films by High Temperature Chemical Conversion of Solution Grown Precursor Films

The formation of photoconducting ZnO and transparent conducting CdO films by high temperature oxidation and thermal decomposition of chemically deposited ZnS and Cd(OH)₂ precursor films respectively is reported. The ZnS to ZnO and Cd(OH)₂ to CdO conversions were confirmed by x-ray diffraction (XRD)₂ electrical and optoelectronic studies. As deposited ZnS and Cd(OH)₂ films exhibited very low dark conductivity and no photoconductivity. Air oxidation of ZnS films at about 400°C for at least 15 minutes converted them to ZnO films with higher dark and photoconductivity. Cd(OH)₂ to CdO conversion occurred at about 300°C. CdO films exhibited a dark conductivity of the order of 10³ (Ωcm)^-1 and an optical transmittance in the range of 90%. These characteristics of ZnO and CdO films make them suitable candidates for the development of low cost photoconductors and solar cell structures.     

Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devices

Highly conducting p- and n-type poly-Si:H films were deposited by hot wire chemical vapor deposition (HWCVD) using SiH₄+H₂+B₂H₆ and SiH₄+H₂+PH₃ gas mixtures, respectively. Conductivity of 1.2×10² (Ω cm)⁻¹ for the p-type films and 2.25×10² (Ω cm)⁻¹ for the n-type films was obtained. These are the highest values obtained so far by this technique. The increase in conductivity with substrate temperature (T_s) is attributed to the increase in grain size as reflected in the atomic force microscopy results. Interestingly conductivity of n-type films is higher than the p-type films deposited at the same T_s. To test the applicability of these films as gate contact Al/poly-Si/SiO₂/Si capacitor structures with oxide thickness of 4 nm were fabricated on n-type c-Si wafers. Sputter etching of the poly-Si was optimized in order to fabricate the devices. The performance of the HWCVD poly-Si as gate material was monitored using C–V measurements on a MOS test device at different frequencies. The results reveal that as deposited poly-Si without annealing shows low series resistance.     

Sc2W3O12薄膜制备及其负热膨胀性能

采用脉冲激光沉积法制备了斜方相Sc₂W₃O₁₂薄膜。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对Sc₂W₃O₁₂靶材和Sc₂W₃O₁₂薄膜组分、表面形貌和靶材断面形貌进行表征, 研究衬底温度与氧分压对薄膜制备的影响。采用变温XRD和热机械分析仪(TMA)分析了Sc₂W₃O₁₂陶瓷靶材和薄膜的负热膨胀特性。实验结果表明: 经1000℃烧结6 h得到结构致密的斜方相Sc₂W₃O₁₂陶瓷靶材, 其在室温到600℃的温度范围内平均热膨胀系数为-5.28×10^-6 K^-1。在室温到500℃衬底温度范围内脉冲激光沉积制备的Sc₂W₃O₁₂薄膜均为非晶态, 随着衬底温度的升高, 薄膜表面光滑程度提高; 随着沉积氧压强增大, 表面平整性变差。非晶膜经1000℃退火处理7 min后得到斜方相Sc₂W₃O₁₂多晶薄膜, 在室温到600℃温度区间内, Sc₂W₃O₁₂薄膜的平均热膨胀系数为-7.17×10^-6 K^-1。