与标准集成电路工艺兼容的硅基光学器件研究

着重介绍了与标准集成电路工艺兼容的硅基光学器件的最新研究进展,包括硅基光发射器、硅基光波导和调制器件、硅基光电探测器和接收机以及硅基光电子集成回路的工作原理、制作工艺和集成技术.与标准集成电路工艺兼容的硅基光电子集成回路能有效地解决电互连芯片内部串扰、带宽和能耗等问题,并能够充分利用现有成熟的集成电路工艺,实现大规模生产,具有广阔的实用前景.     

新颖的硅基光电材料

光电集成是未来信息技术发展的重要方向之一,硅基光电集成具有巨大的应用前景,在硅基材料及集成方面源头创新空间很大。论述了新颖的硅基材料研究现状及应用前景。     

SOI光电子集成

SOI（Silicon-on-Insulator)光电子集成已成为十分引人注目的研究课题，其工艺与CMOS工艺完全兼容，可以实现低成本的SOI基整片集成光电子回路。本文综述了近几年来SOI集成光电子器件的发展以及一些最新的研究进展，着重分析几种最新型光无源器件的工作原理和结构，包括SOI光波导、SOI光波导耦合器、SOI光波导开关、相位阵列波导光栅（PAWG）、基于SOI的光探测器等，并介绍了中国科学院半导体所集成光电子国家重点实验室的研究进展。     

硅基材料的发光特性及机理

硅基发光材料及器件是实现光电子集成的关键,文章介绍了目前取得较大进展的包括多孔硅,掺铒硅,钠米硅等几种主要硅基材料的发光特性及发光机理。     

光波导放大器用材料的研究进展

回顾了3种光放大器的工作原理、应用现状,分析了4类主要的光波导放大器用材料的性能、特点和研究现状.分析表明,非氧化物玻璃和硅基光波导材料对研制光波导放大器有很好的应用潜力.     

离子注入技术与硅基发光材料

硅基发光材料是未来光电子集成的基础材料。离子注入技术在琪发光材料的研究与开发中有极重要的作用。多孔硅的发现是硅基发光材料的一项重大进展。     

光电导型混晶Si1-xGex波导探测器

首次报导了光电导型混晶Ｓｉ－ｘＧｅｘ波导探测器。混晶Ｓｉ１－ｘＧｅｘ是在硅基ＳｉＯＮ／ＳｉＯ２／Ｓｉ上用快速加热超低压化学气相淀积生长并经６５０℃退火３０ｍｉｎ得到的。探测器宽１０μｍ,长２ｍｍ。探测器加２０Ｖ偏置电压是,探测灵敏在０．０２２－０．０１０Ａ／Ｗ之间。混晶Ｓｉ１－ｘＧｅｘ造成探测器的光谱响应曲线发生蓝移。当锗组分ｘ＝０．３５、０．４、０．５、和０．６时,探测器峰值波长分别对应为８７５     

提高稀土掺杂光波导放大器增益的技术进展

稀土掺杂光波导放大器(RDWA)是继光纤放大器(RDFA)之后的新一代稀土掺杂光放大器,其更适用于未来光放大器集成化、小型化的要求,并且在降低成本方面优势明显。提高RDWA性能通常从提高稀土离子发光效率和降低波导损耗两个方面进行探究,这就要求更加合适的掺杂材料和高性能的波导结构,以及尽可能低的传输损耗。总结了稀土掺杂玻璃基、聚合物基、硅基及低损耗材料基质光波导放大器的研究进展,最后展望了本领域的发展前景。     

硅基发光材料研究进展

硅基发光材料是光电子集成的基础材料。发光多孔硅是硅基发光材料的一个新进展，已实现了硅基光电子集成。随着多孔硅研究的深化和纳米科学的发展，硅基发光材料正向纳米方向开拓，与此同时，在新的理论认识与技术条件下，硅材料改性，杂质发光，缺陷工程和硅然异质外延也呈现出新的发展趋势。     

半导体所硅基光子学研究取得重要突破

<正>基于硅基微纳波导的硅基光子学由于可以实现超小体积、低能耗、CMOS兼容的单片高密度光电集成,已被各国公认为突破计算机和通信超大容量、超高速信息传输和处理瓶颈的最理想技术之一。     

Study of the monolithic integration of sub-bandgap detection, signal amplification and optical attenuation on a silicon photonic chip

We report the development of a silicon integrated circuit that combines conventional electronic circuitry with all-silicon optical waveguides, detectors and modulators. The circuit functions as an optical channel power leveller by amplifying current from a photodetector and feeding that current back to a modulator on the same waveguide. This article describes the use of local oxidation of silicon (LOCOS) for optical waveguide fabrication, the use of deep diffused wells to ensure electrical isolation between the forward biased modulator and detector diodes, and defect-engineering of the photodiodes to give them sufficient responsivity at the operating wavelength of 1.55 μm.     

Photodetector performance enhancement using an electron accelerator controlled by light

A new method of photodetector performance enhancement using an embedded optical accelerator circuit within the photodetector is proposed. The principle of optical tweezer generation using a light pulse within a PANDA ring is also reviewed. By using a modified add-drop optical filter known as a PANDA microring resonator, which is embedded within the photodetector circuit, the device performance can be improved by using an electron injection technique, in which electrons can be trapped by optical tweezers generated by a PANDA ring resonator. Finally, electrons can move faster within the device via the optical waveguide without trapping center in the silicon bulk to the contact, in which the increase in photodetector current is seen. Simulation results obtained have shown that the device's light currents are increased by the order of four, and the switching time is increased by the order of five. This technique can be used for better photodetector performance and other semiconductor applications in the future.     

Locally oxidized silicon surface-plasmon Schottky detector for telecom regime

We experimentally demonstrate an on-chip nanoscale silicon surface-plasmon Schottky photodetector based on internal photoemission process and operating at telecom wavelengths. The device is fabricated using a self-aligned approach of local-oxidation of silicon (LOCOS) on silicon on insulator substrate, which provides compatibility with standard complementary metal-oxide semiconductor technology and enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. Additionally, LOCOS technique allows avoiding lateral misalignment between the silicon surface and the metal layer to form a nanoscale Schottky contact. The fabricated devices showed enhanced detection capability for shorter wavelengths that is attributed to increased probability of the internal photoemission process. We found the responsivity of the nanodetector to be 0.25 and 13.3 mA/W for incident optical wavelengths of 1.55 and 1.31 μm, respectively. The presented device can be integrated with other nanophotonic and nanoplasmonic structures for the realization of monolithic opto-electronic circuitry on-chip.     

Analysis and design of a rib-like-based slot waveguide for nonlinear silicon nanophotonics

Design of efficient nonlinear optical waveguides is an essential requirement for development of silicon nanophotonics. These waveguides should have a unique capability to play the main role in realization of both passive and active optical devices. A high-performance dielectric rib-like-based slot waveguide is proposed for nonlinear silicon nanophotonics. Its slot region can be filled with Si-nc:SiO₂ which exhibits a high third-order nonlinear effect. Study of numerical results shows that this new slot waveguide has a nonlinear parameter of the same order of magnitude as an equally sized silicon nanophotonics strip-based slot waveguide. The new waveguide can be fabricated easily by etching a slot in the core region of the silicon-on-insulator (SOI)-based rib-like waveguide.     

光电集成加速度地震检波器中声光波导相位调制器的设计与实验

提出了一种新型的光电集成加速度地震检波器,这是一种全新的微光机电系统(MOEMS),为实现硅基底上的光波导M-Z干涉仪的相位调制,采用了声光相位调制的方法,该相位调制器利用叉指换能器(IDT)激发出声表面波(SAW)实现对光波导的相位调制,在对光波导声光相位调制机理深入研究的基础上,设计并制作了器件,实验结果与理论相一致。     

Light coupling into an optical microcantilever by an embedded diffraction grating

By measuring the excitation efficiency of an optical waveguide on a diffraction grating one can accurately register the changes in the incidence angle of the exciting light beam. This phenomenon was applied to detect ultrasmall deflections of silicon dioxide cantilevers of submicrometer thickness that were fabricated with corrugation on top to act as diffraction grating couplers. The power of light coupled into the cantilevers was monitored with a conventional photodetector and modulated using mechanical vibration of the cantilever, thus changing the spatial orientation of the coupler with respect to the incident light beam. The technique can be considered as an alternative to the methods known for detection of cantilever deflection.     

Wide-angle narrow-bandpass optical detection system optimally designed to have a large signal-to-noise ratio

A method for achieving optimal design of a wide-angle narrow-bandpass optical detection system composed of a spherical interference filter and a circular photodetector is introduced. It was found that there is an optimal photodetector diameter that maximizes the signal-to-noise ratio (SNR) for a given filter configuration. We show how to optimize optical detection systems based on spherical interference filters for all the important parameters simultaneously. The SNR values of these systems are compared with the SNR values of spherical-step-filter-based detection systems. When large silicon photodetectors are used, the two systems have equal SNR values so that the more economical step-filter systems are preferable. The results given here in the near-infrared region can be used for the optimization of any configuration of a detection system based on a spherical interference filter and a silicon photodetector working at the same wavelength range, without further calculations.     

Magneto-optical non-reciprocal devices in silicon photonics

Silicon waveguide optical non-reciprocal devices based on the magneto-optical effect are reviewed. The non-reciprocal phase shift caused by the first-order magneto-optical effect is effective in realizing optical non-reciprocal devices in silicon waveguide platforms. In a silicon-on-insulator waveguide, the low refractive index of the buried oxide layer enhances the magneto-optical phase shift, which reduces the device footprints. A surface activated direct bonding technique was developed to integrate a magneto-optical garnet crystal on the silicon waveguides. A silicon waveguide optical isolator based on the magneto-optical phase shift was demonstrated with an optical isolation of 30 dB and insertion loss of 13 dB at a wavelength of 1548 nm. Furthermore, a four port optical circulator was demonstrated with maximum isolations of 15.3 and 9.3 dB in cross and bar ports, respectively, at a wavelength of 1531 nm.