共查询到18条相似文献,搜索用时 203 毫秒
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结合当前掺杂ZnO功能薄膜的制备方法、工艺条件,综述了不同掺杂元素对ZnO薄膜的结构、电学、光学性能、气敏特性以及应用领域等方面的影响,并展望了ZnO功能薄膜的发展趋势. 相似文献
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金刚石虽然具有极为优异的性能,如具有很大的能隙,高的电子迁移率、空穴迁移率和高热导率,以及负的电子亲和势,但要将它用于半导体材料时还不能直接使用,必须要先进行金刚石的P型和n型掺杂。因此,研究金刚石的P型和n型掺杂具有很重要的现实意义。在金刚石薄膜中掺杂时,一般是掺入硼原子以实现P型掺杂,掺入氮原子或磷原子以实现n型掺杂。然而,由于N和P在金刚石中的施主能级太深,现在n型掺杂金刚石薄膜制备尚不成功,这是金刚石实用化的障碍。本文介绍了金刚石膜掺硼目的、方法和制备,总结了掺硼金刚石膜在微电子、电化学、光电子、工具等领域应用状况以及存在问题。 相似文献
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ZnO纳米材料的p型掺杂研究进展 总被引:1,自引:0,他引:1
随着近年来各种形貌ZnO纳米材料的生长及ZnO纳米器件的研究,ZnO纳米材料的p型掺杂逐渐成为研究的重点之一.主要介绍了ZnO纳米材料的p型掺杂及其器件研究进展,简要讨论了当前掺杂研究的局限,展望了今后的发展方向. 相似文献
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R. Weingrtner M. Bickermann S. Bushevoy D. Hofmann M. Rasp T. L. Straubinger P. J. Wellmann A. Winnacker 《Materials Science and Engineering: B》2001,80(1-3):357-361
An optical characterization method for determination of spatial doping level concentration in n-type 4H-SiC and p-type 6H-SiC is discussed. The absorption bands of free charge carriers at 460 nm in n-type 4H-SiC are used to determine its doping concentration. In p-type 6H-SiC, the band edge related absorption at 410 nm is a measure for the doping concentration. In both cases, Hall measurements are performed for calibration. Various examples of SiC-wafer mappings are shown and the relationships to crystal growth conditions, i.e. control of doping level and distribution, are investigated. 相似文献
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Ian Y.Y. Bu 《Vacuum》2011,86(1):106-110
The aim of this study is to synthesis large area, plastic compatible of p-type nanocrystalline silicon through conventional sputter system. The growth of and p-type doping of nanocrystalline silicon onto plastic substrates using D.C. magnetron sputtering was investigated. The film properties were examined by Raman spectroscopy, X-ray Diffraction, scanning electron microscopy and energy dispersive spectrometry. Nanocrystalline silicon was achieved with careful control of ion bombardment energy. Through a narrow experimental, window room temperature, nanocrystalline silicon can be synthesised on aluminium. It is believed the aluminium reduces the required energy for crystallite nucleation. PN junction was formed through sputtering of Al/Al-Si/n-type Si/AZO structure. The I-V characteristic showed good rectifying behaviour and confirms p-type doping via aluminium induced crystallization. 相似文献
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The interpretation of Raman spectra of GaSb can be complicated by the presence of a so-called surface space-charge region (SSCR), resulting in an inhomogeneous near-surface Raman scattering environment. To fully interpret Raman spectra, it is important to have an understanding of the SSCR profile relative to the Raman probe depth. However, a priori determination of even the actual SSCR width is not always possible for GaSb under a wide range of doping levels. The primary objective of this report is to provide a convenient reference to aid in the determination of relative contributions to an observed GaSb Raman spectrum of SSCR scattering and bulk scattering for a range of excitation wavelengths, doping levels, and SSCR widths and types. Raman spectra of both n-type and p-type doped GaSb epilayers were obtained using 488 nm, 514.5 nm, 647.1 nm, and 752.55 nm excitation radiation. Both n-type and p-type doped GaSb epilayers were selected for investigation because these layers exhibit the two different SSCR types that are typically encountered with as-grown GaSb and related materials. A range of doping levels were examined for each doping type so as to examine the effects of a varying SSCR width on the observed spectra. A secondary objective of this report is to demonstrate the performance of a spectroscopic system based on 752.55 nm excitation that is sensitive to bulk carrier properties in n-type and p-type doped GaSb epilayers over a wide doping range, unlike visible-wavelength-based optical systems. 相似文献
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《Vacuum》2012,86(1):106-110
The aim of this study is to synthesis large area, plastic compatible of p-type nanocrystalline silicon through conventional sputter system. The growth of and p-type doping of nanocrystalline silicon onto plastic substrates using D.C. magnetron sputtering was investigated. The film properties were examined by Raman spectroscopy, X-ray Diffraction, scanning electron microscopy and energy dispersive spectrometry. Nanocrystalline silicon was achieved with careful control of ion bombardment energy. Through a narrow experimental, window room temperature, nanocrystalline silicon can be synthesised on aluminium. It is believed the aluminium reduces the required energy for crystallite nucleation. PN junction was formed through sputtering of Al/Al–Si/n-type Si/AZO structure. The I–V characteristic showed good rectifying behaviour and confirms p-type doping via aluminium induced crystallization. 相似文献