Effects of surface track potential on secondary electron emission and surface stopping power

In ion-surface scattering a positive surface track potential is induced on the surface behind the projectile due to ionizing collisions. The surface track potential is expected to affect secondary electron emission as well as the energy loss process of the projectile ions. We measure secondary electron yield induced by 0.5 MeV/u H⁺, He²⁺, Li²⁺ and B³⁺ ions during grazing angle scattering at a KCl(0 0 1) surface. The position-dependent secondary electron production rate was derived from the observed secondary electron yield. The secondary electron production rate is normalized by the mean square charge of the reflected ions. The normalized rate decreases with Z₁ suggesting that the surface track potential recapture the secondary electrons. We also measure the energy losses of 0.5 MeV/u H⁺, He²⁺, Li²⁺, B³⁺ and C⁴⁺ ions during grazing angle scattering at a KCl(0 0 1) surface. The observed result suggests that the surface stopping power is reduced by the surface track potential.     

Fe3GaAs/GaAs(0 0 1): a stable and magnetic metal-semiconductor heterostructure

We show that in agreement with the ternary Fe-Ga-As phase diagram, the solid-state interdiffusions in epitaxial Fe/GaAs(0 0 1) heterostructures lead, at a temperature of approximately 500 °C, to the formation of thermodynamically stable Fe₃GaAs/GaAs(0 0 1) contacts quite similar to the well-known silicide/Si ones. The Fe₃GaAs films are made of grains epitaxial on GaAs with a well-defined interface. Their magnetic and electrical properties make Fe₃GaAs on GaAs an attractive metallization scheme for future magnetoelectronic devices. The results we report concern (25 or 80 nm Fe)/GaAs(0 0 1) heterostructures annealed at 480 and 500 °C for 10 min and characterized ex situ by He⁺ Rutherford backscattering and ion channeling, X-ray diffraction, transmission electron microscopy and alternating gradient field magnetometry.     

A high-pressure mass spectrometric study of ion-molecule reactions in a mixture of CF4 and He

Gas phase ion-molecule reactions of positive He⁺ ions produced from helium with neutral carbon tetrafluoride have been studied. The measurements were made with a quadrupole mass spectrometer with a high-pressure ion source. The fractional abundance I_i/∑I_i of dominant ions CF₃⁺, CF₂⁺ and helium ions has been determined as a function of the (1% CF₄ and 99% He) gas mixture pressure (in the range 1.33-31.92 Pa) and of the repeller electrode potential (ranging from 3 to 10 V).     

Extended deep level defects in Ge-condensed SiGe-on-Insulator structures fabricated using proton and helium implantations

SiGe-on-Insulator (SGOI) structures were created using the Ge condensation method, where an oxidation process is performed on the SiGe/Si structure. This method involves rapid thermal chemical vapor deposition and H⁺/He⁺ ion-implantations. Deep level defects in these structures were investigated using deep level transient spectroscopy (DLTS) by varying the pulse injection time. According to the DLTS measurements, a deep level defect induced during the Ge condensation process was found at 0.28 eV above the valence band with a capture cross section of 2.67 × 10^− 17 cm², two extended deep levels were also found at 0.54 eV and 0.42 eV above the valence band with capture cross sections of 3.17 × 10^− 14 cm² and 0.96 × 10^− 15 cm², respectively. In the SGOI samples with ion-implantation, the densities of the newly generated defects as well as the existing defects were decreased effectively. Furthermore, the Coulomb barrier heights of the extended deep level defects were drastically reduced. Thus, we suggest that the Ge condensation method with H⁺ ion implantation could reduce deep level defects generated from the condensation and control the electrical properties of the condensed SiGe layers.     

Surface planarization and masked ion-beam structuring of YBa2Cu3O7 thin films

Surface planarization and masked ion-beam structuring (MIBS) of high-T_c superconducting (HTS) YBa₂Cu₃O_7-δ (YBCO) thin films grown by pulsed-laser deposition (PLD) method is reported. Chemical-mechanical polishing, plasma etching, and oxygen annealing of YBCO films strongly reduce the particulate density (~ 10^-2 ×) and surface roughness (~ 10^-1 ×) of as-grown PLD layers. The resistivity, critical temperature T_c ≈ 90 K and critical current density J_c (77 K) > 1 MA/cm² of films are not deteriorated by the planarization procedure. The YBCO films are modified and patterned by irradiation with He⁺ ions of 75 keV energy. Superconducting tracks patterned by MIBS without removal of HTS material and, for comparison, by wet-chemical etching show same T_c and J_c(T) values. Different micro- and nano-patterns are produced in parallel on planarized films. The size of irradiated pattern depends on the mask employed for beam shaping and features smaller than 70 nm are achieved.     

Ion bombardment of polyethylene—influence of polymer structure

Polyethylenes of various macromolecular and supermolecular structures were studied from the point of view of their susceptibility to an ion beam treatment. An influence of molecular weight (M_w), molecular weight distribution (M_w/M_n) and the degree of branching were compared within the set of low-density polyethylenes (LDPE) studied. An influence of the length of branches was compared between LDPE, linear low-density (LLDPE) and high-density (HDPE) polyethylenes. An influence of the degree of crystallinity and the morphology of a crystalline phase were compared for HDPE samples solidified under various thermal conditions and ultra-high molecular weight polyethylene (UHMWPE). Plate polymer targets ∼2 mm were bombarded with 100 keV He⁺ or 130 keV Ar⁺ ions (dose of 10¹⁴-10¹⁶ ions/cm²; ion energy stream density <0.1 μA/cm²), micromechanical properties of their surface layer (hardness, mechanical modulus and elastic recovery) determined and compared to the virgin materials.Ar⁺ ion beam bombardment generally lowers micromechanical properties of the polyethylenes, whereas He⁺ ion beam treatment makes them higher. The effect is the stronger the higher the molecular weight of polyethylene. However, a long chain branching adversely affects the modification. The degree of crystallinity facilitates an ion beam bombardment from the point of view of micromechanical properties of the materials, however, also the morphology of a crystalline phase was found to play a role.     

PIXE detection limits for dental enamel from some human teeth by excitation with protons and He ions from a 3 MeV Van der Graaff accelerator

A technique has been developed to measure elemental content in human teeth using H⁺ and ⁴He²⁺ ion beam analysis. Teeth of Oradea inhabitants were sampled in two stomatological clinics in Oradea in the period of 2004 and 2005 years. Tooth samples were irradiated in vacuum with 2 MeV proton and 3 MeV alpha beams from a Van der Graaff electrostatic accelerator of EG-5 experimental facility in FLNP, JINR. The particle induced X-ray emission (PIXE) analysis, apart from determination of Ca, allowed an optimised detection of Cr, Cu, Fe and Zn above the detection limits by the use of Al and Mylar filters. The detection limits for K_α X-rays using proton and alpha beams are determined and discussed.     

Study of defects in the near-surface layer created in silicon by H2 or He implantation

Thermal donors formation in silicon implanted with H₂⁺ or He⁺ ions or co-implanted with both kinds of ions and annealed at 720 K under atmospheric and enhanced pressure was studied. Interaction between defects from different implanted layers was also analysed. Local strain in implanted layers was found to determine the process of defect and impurity redistribution.     

High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness

High quality thin aluminum nitride (AlN) films have been deposited onto a silicon (1 0 0) substrate by radio frequency magnetron sputtering of a pure Al target using different gas (Ar, N₂) mixtures. The depositions were carried out at substrate temperatures varying from room temperature (plasma heating) up to 400°C. The crystalline structures were investigated by X-ray diffractometry (XRD) revealing a pronounced texture of the deposited films. Some of the compounds investigated were deposited onto a thin buffer layer of pure Al. The film surface morphology was investigated by Atom Force Microscopy (AFM) (SPM-9500J3 from Shimadzu Co), and was found to depend distinctively upon the different deposition conditions. Generally, two kinds of structures were found—a columnar one, which was densely packed or organized in planar parallel sheets, and a flat structure, (typical for mono-crystals), with rms roughness below 0.2 nm. In this paper, the influence of argon added to the sputtering gas environment on the film properties is investigated and discussed. The depth elemental distributions were calculated using 2.4 MeV ⁴He⁺ Rutherford Backscattering Spectrometry (RBS). Finally, the mechanical characteristics were described using hardness tests.     

Erbium ion implantation into different crystallographic cuts of lithium niobate

Single crystals like lithium niobate are frequently doped with optically active rare-earth or transition-metal ions for a variety of applications in optical devices such as solid-state lasers, amplifiers or sensors. To exploit the potential of the Er:LiNbO₃, one must ensure high intensity of the 1.5 μm luminescence as an inevitable prerequisite. One of the important factors influencing the luminescence properties of a lasing ion is the crystal field of the surrounding, which is inevitably determined by the crystal structure of the pertinent material. From that point it is clear that it cannot be easy to affect the resulting luminescence properties - intensity or position of the luminescence band - without changing the structure of the substrate. However, there is a possibility to utilise a potential of the ion implantation of the lasing ions, optionally accompanied with a sensitising one, that can, besides the doping, also modify the structure of the treated area od the crystal. This effect can be eventually enhanced by a post-implantation annealing that may help to recover the damaged structure and hence to improve the desired luminescence.In this paper we are going to report on our experiments with ion-implantation technique followed with subsequent annealing could be a useful way to influence the crystal field of LN. Optically active Er:LiNbO₃ layers were fabricated by medium energy implantation under various experimental conditions. The Er⁺ ions were implanted at energies of 330 and 500 keV with fluences ranging from 1.0 × 10¹⁵ to 1.0 × 10¹⁶ ion cm⁻² into LiNbO₃ single-crystal cuts of both common and special orientations. The as-implanted samples were annealed in air and oxygen at two different temperatures (350 and 600 °C) for 5 h. The depth concentration profiles of the implanted erbium were measured by Rutherford Backscattering Spectroscopy (RBS) using 2 MeV He⁺ ions. The photoluminescence spectra of the samples were measured to determine the emission of 1.5 μm.It has been shown that the projected range Rp of the implanted erbium depends on the beam energies of implantation. The concentration of the implanted erbium corresponds well with the fluence and is similar in all of the cuts of lithium niobate used. What was different were the intensities of the 1.5 μm luminescence bands not only before and after the annealing but also in various types of the crystal cuts. The cut perpendicular to the cleavage plane 〈10-14〉 exhibited the best luminescence properties for all of the experimental conditions used. In order to study the damage introduced by the implantation process, the influence of the annealing procedure on the recovery of the host lattice was examined by RBS/channelling. The RBS/channelling method serves to determine the disorder density in the as-implanted surface layer.     

Effect of base and oxygen partial pressures on the electrical and optical properties of indium molybdenum oxide thin films

Indium molybdenum oxide thin films were RF sputtered at room temperature on glass substrates with a reference base pressure of 7.5 × 10^− 4 Pa. The electrical and optical properties of the films were studied as a function of oxygen partial pressures (OPP) ranging from 1.5 × 10^− 3 Pa to 3.5 × 10^− 3 Pa. The obtained data show that the bulk resistivity of the films increased by about 4 orders of magnitude (from 7.9 × 10^− 3 to 7.6 × 10¹ Ω-cm) when the OPP increased from 1.5 × 10⁻³ to 3.5 × 10^− 3 Pa, and the carrier concentration decreased by about 4 orders (from 1.77 × 10²⁰ to 2.31 × 10¹⁶ cm^− 3). On the other hand, the average visible transmittance of 30.54% of the films (brown colour; OPP = 1.5 × 10^− 3 Pa) was increased with increasing OPP to a maximum of 80.47% (OPP = 3.5 × 10^− 3 Pa). The optical band gap calculated from the absorption edge of the transmittance spectra ranges from 3.77 to 3.88 eV. Further, the optical and electrical properties of the films differ from those deposited at similar conditions but with a base pressure lower than 7.5 × 10^− 4 Pa.     

Preparation and upconversion property of TeO2:Er/Yb nanoparticles

Different crystal structure of TeO₂ nanoparticles were used as the host materials to prepare the Er³⁺/Yb³⁺ ions co-doped upconversion luminescent materials. The TeO₂ nanoparticles mainly kept the original morphology and phase after having been co-doped the Er³⁺/Yb³⁺ ions. All the as-prepared TeO₂:Er³⁺/Yb³⁺ nanoparticles showed the green emissions (525 nm, 545 nm) and red emission (667 nm) under 980 nm excitation. The green emissions at 525 nm, 545 nm and red emission at 667 nm were attributed to the ²H_11/2 → ⁴I_15/2, ⁴S_3/2 → ⁴I_15/2 and ⁴F_9/2 → ⁴I_15/2 transitions of the Er³⁺ ions, respectively. For the α-TeO₂:Er³⁺/Yb³⁺ (3/10 mol%) nanoparticles, three-photon process involved in the green (²H_11/2 → ⁴I_15/2) emission, while two-photon process involved in the green (⁴S_3/2→⁴I_15/2) and red (⁴F_9/2 → ⁴I_15/2) emissions. For the β-TeO₂:Er³⁺/Yb³⁺ (3/10 mol%) nanoparticles, two-photon process involved in the green (²H_11/2 → ⁴I_15/2), green (⁴S_3/2 → ⁴I_15/2) and red (⁴F_9/2 → ⁴I_15/2) emissions. It suggested that the crystal structure of TeO₂ nanoparticles had an effect on transition processes of the Er³⁺/Yb³⁺ ions. The emission intensities of the α-TeO₂:Er³⁺/Yb³⁺ (3/10 mol%) nanoparticles and β-TeO₂:Er³⁺/Yb³⁺ (3/10 mol%) nanoparticles were much stronger than those of the (α + β)-TeO₂:Er³⁺/Yb³⁺ (3/10 mol%) nanoparticles.     

Spectral properties of Tm:NaGd(MoO4)2 crystal

The Tm³⁺:NaGd(MoO₄)₂ crystal with dimensions of Φ 15 × 38 mm² was grown by Czochralski method. Polarized absorption and fluorescence spectra at room temperature were investigated. The absorption bands attributed to ³H₆ → ³H₄ transition have large absorption cross-sections, which are 3.99 × 10⁻²⁰ and 2.36 × 10⁻²⁰ cm² for σ- and π-polarization, respectively. The emission bands corresponding to the ³H₄ → ³H₆ transition are strong and broad with emission cross-sections of 1.33 × 10⁻²⁰ and 1.20 × 10⁻²⁰ cm² for σ- and π-polarization, respectively. The correlative full widths at half maximum are 35 nm for σ-polarization and 36 nm for π-polarization. The fluorescence lifetime for the ³H₄ → ³F₄ transition is 146 μs and the luminescent quantum efficiency is 76.8%.     

The effect of In ion on the optical characteristics of Er in Er/Yb:LiNbO3 crystal

The effect of In³⁺ ion on the optical characteristics of Er³⁺ ion in Er/Yb:LiNbO₃ crystal under 980 nm excitation has been investigated. The Er and Yb contents in the crystals were measured by an inductively coupled plasma atomic emission spectrometer (ICP-AES). A significant enhancement of 1.54 μm emission was observed for Er/Yb:LiNbO₃ crystal doped with 1 mol% In₂O₃. The studies on the UV-vis absorption and the OH⁻ absorption spectra indicate that the threshold concentration of In³⁺ ion decreases with the Er/Yb doping in Er/Yb/In:LiNbO₃ crystal. The 1 mol% In₂O₃ doping results in the reduction of absorption cross section in the UV-vis region, meaning the formation of Er³⁺ cluster sites. The enhancement of 1.54 μm emission is attributed to the larger probabilities of the cross relaxation processes ⁴S_3/2 + ⁴I_15/2 → ⁴I_9/2 + ⁴I_13/2 (Er), ⁴S_3/2 + ⁴I_15/2 → ⁴I_13/2 + ⁴I_9/2 (Er) and ⁴I_9/2 + ⁴I_15/2 → ⁴I_13/2 + ⁴I_13/2 (Er) induced by Er³⁺ cluster sites.     

High-sensitivity and high-resolution low-energy ion scattering

Low-Energy Ion Scattering (LEIS or ISS) is used to selectively analyze the atomic composition of the outer atomic layer of surfaces. In addition, the spectrum gives (non-destructively) the in-depth distribution. Using a double toroidal energy analyzer with parallel energy detection and time-of-flight filtering a high sensitivity and mass resolution of LEIS is achieved. This is demonstrated for a highly dispersed catalyst of Pt/Au on γ-alumina. The improved depth resolution is illustrated for self-assembled monolayers of alkanethiols (12-20 carbon atoms) on gold. Even for these low Z carbon atoms a clear shift of 8 eV/carbon atom is observed (using 1.5 keV ⁴He⁺ ion scattering). This opens many new possibilities for studies of ultra-thin diffusion barriers, high-k dielectrics and biosensors.     

Luminescence of rare earth borosilicates with the stillwellite and related structures

By hydrothermal reactions it was possible to prepare well-crystallized borosilicates of composition La_{1 − x − y}Ln_xLn′_yBSiO₅ with the trigonal stillwellite structure. Ln = Eu³⁺ and Tb³⁺ produce compounds with only weak luminescence. Compounds with Ln = Ce³⁺ are strong UV phosphors with peak intensity at x = 0.08 and abrupt concentration quenching at x = 0.10. Compounds with Ln = Ce³⁺ and Ln′ = Tb³⁺ exhibit effective Ce³⁺ → Tb³⁺ coactivation and strong green luminescence. This family of borosilicates appears to be useful phosphor hosts, aside from the necessity of non-traditional synthesis.     

Rare-earth doped solid-state phosphor with temperature induced variable chromaticity

Temperature induced variable chromaticity lanthanide multidoped solid-state phosphors are presented. The phosphors are composed of ytterbium-sensitized multiple-doped (Tm, Er, Ho) PbGeO₃-PbF₂-CdF₂ glass excited at 1.064 µm. The temperature induced color variation exploits the heat enhanced effective absorption cross-section of the ytterbium sensitizer under quasi-resonance excitation. The temperature enhancement of the energy-transfer mechanism between the sensitizer and the appropriate active light emitter allows the selective intensity control of the RGB emissions due to distinct excitation routes. The suitable combination of active ions generated variable chromaticity light with CIE-1931 coordinates changing from CIE-X = 0.283; Y = 0.288 at 20 °C to CIE-X = 0.349;Y = 0.412 at 190 °C, and CIE-X = 0.285; Y = 0.361 at 25 °C to CIE-X = 0.367; Y = 0.434 at 180 °C in Yb³⁺/Tm³⁺/Ho³⁺ and Yb³⁺/Tm³⁺/Er³⁺ samples, respectively.     

Novel multiferroic La0.95Sb0.05FeO3 orthoferrite

A series of La_1−xSb_xFeO₃ was prepared using the conventional solid state method. XRD revealed the formation of the orthorhombic structure with space group Pbnm. The data showed that, the molar magnetic susceptibility and coercive field H_C were increased from 9.16 × 10⁻³ to 26.9 × 10⁻³ emu g⁻¹ mol and 1196 to 5465 Oe from for LaFeO₃ to La_0.95Sb_0.05FeO₃, respectively. The coercive field (H_C) of the sample with x = 0.05 increased 6 times than that of the parent LaFeO₃ and the saturation magnetization (M_s) was increased from 0.1614 emu g⁻¹ for the parent LaFeO₃ to 0.2654 emu g⁻¹ for the doped sample_. The dielectric constant (?′) was increased with increasing the Sb³⁺ content. The ac conductivity (σ) increases from 2.36 × 10⁻³ Ω⁻¹ m⁻¹ for the LaFeO₃ to 30 × 10⁻³ Ω⁻¹ m⁻¹ for the sample La_0.95Sb_0.05FeO₃ at T = 553 K and frequency 1 MHz. The sample La_0.95Sb_0.05FeO₃ is concluded to be a novel single phase multiferroic material.     

The effect of sodium doping to CuInSe2 monograin powder properties

The effect of sodium doping to the electrical and photoluminescence properties of CuInSe₂ monograin powders was studied. Sodium was added in controlled amounts from 5 × 10¹⁶ cm^− 3 to 1 × 10²⁰ cm^− 3. The photoluminescence spectra of Na-doped stoichiometric CuInSe₂ powders had two bands with peak positions at 0.97 and 0.99 eV. The photoluminescence bands showed the shift of peak positions depending on the Na doping level. Peak positions with maximum energy were observed if added sodium concentration was 1 × 10¹⁹ cm^− 3. This material had the highest carrier concentration 2 × 10¹⁷ cm^− 3. In the case of stoichiometric CuInSe₂ (Cu:In:Se = 25.7:25.3:49.0), Na doping at concentrations of 3 × 10¹⁷ cm^− 3 and higher avoided the precipitation of Cu-Se phase. Solar cells output parameters were dependent on the Na doping level. Sodium concentration 3 × 10¹⁸ cm^− 3 resulted in the best open-circuit voltage.     

Growth, spectroscopic properties and laser performance of Nd-doped potassium ytterbium tungstate laser crystal

The 5 at.% Nd³⁺-doped potassium ytterbium tungstate (Nd³⁺:KYb(WO₄)₂, hereafter Nd:KYbW) laser crystal with the dimension up to 28 mm × 15 mm × 12 mm was grown by the top seeded solution growth (TSSG) method. The infrared spectrum of crystal sample was measured, and the vibrational peaks were assigned. According to the absorption and emission spectra of crystal sample, the absorption and emission cross-sections are 16.03 × 10⁻²⁰ cm² at 808 nm and 10.72 × 10⁻²⁰ cm² at 1067 nm, respectively. The fluorescence life of ⁴F_3/2 energy level is 196.33 μs, and the fluorescence branching ratio for the ⁴F_3/2-⁴I_11/2 transition at 1067 nm is 55.74%. The energy transfer between Nd³⁺ and Yb³⁺ ions was observed from the fluorescence spectra pumped by 808 and 980 nm LD sources and the Stark levels of Yb³⁺ in Nd:KYbW crystal were determined. Highly efficient laser output up to 305 mW of Nd:KYbW crystal at 1067 nm has been achieved under pumping by a CW 808 nm laser diode at room temperature. The optical-optical conversion efficiency is 33.9% and the slope efficiency is 46.8%.