共查询到20条相似文献,搜索用时 15 毫秒
1.
Morisette D.T. Cooper J.A. Jr. Melloch M.R. Dolny G.M. Shenoy P.M. Zafrani M. Gladish J. 《Electron Devices, IEEE Transactions on》2001,48(2):349-352
The static and dynamic characteristics of large-area, high-voltage 4H-SiC Schottky barrier diodes are presented. With a breakdown voltage greater than 1200 V and a forward current in excess of 6 A at 2 V forward bias, these devices enable for the first time the evaluation of SiC Schottky diodes in practical switching circuits. These diodes were inserted into standard test circuits and compared to commercially available silicon devices, the results of which are reported here. Substituting SiC Schottky diodes in place of comparably rated silicon PIN diodes reduced the switching losses by a factor of four, and virtually eliminated the reverse recovery transient. These results are even more dramatic at elevated temperatures. While the switching loss in silicon diodes increases dramatically with temperature, the SiC devices remain essentially unchanged. The data presented here clearly demonstrates the distinct advantages offered by SiC Schottky rectifiers, and their emerging potential to replace silicon PIN diodes in power switching applications 相似文献
2.
Characterization, Modeling, and Application of 10-kV SiC MOSFET 总被引:4,自引:0,他引:4
《Electron Devices, IEEE Transactions on》2008,55(8):1798-1806
3.
SiC power Schottky and PiN diodes 总被引:3,自引:0,他引:3
Singh R. Cooper J.A. Jr. Melloch M.R. Chow T.P. Palmour J.W. 《Electron Devices, IEEE Transactions on》2002,49(4):665-672
The present state of SiC power Schottky and PiN diodes are presented in this paper. The design, fabrication, and characterization of a 130 A Schottky diode, 4.9 kV Schottky diode, and an 8.6 kV 4H-SiC PiN diode, which are considered to be significant milestones in the development of high power SiC diodes, are described in detail. Design guidelines and practical issues for the realization of high-power SiC Schottky and PiN diodes are also presented. Experimental results on edge termination techniques applied to newly developed, extremely thick (e.g., 85 and 100 μm) 4H-SiC epitaxial layers show promising results. Switching and high-temperature measurements prove that SiC power diodes offer extremely low loss alternatives to conventional technologies and show the promise of demonstrating efficient power circuits. At sufficiently high on-state current densities, the on-state voltage drop of Schottky and PiN diodes have been shown to be comparable to those offered by conventional technologies 相似文献
4.
SiC devices: physics and numerical simulation 总被引:10,自引:0,他引:10
The important material parameters for 6H silicon carbide (6H-SiC) are extracted from the literature and implemented into the 2-D device simulation programs PISCES and BREAKDOWN and into the 1-D program OSSI Simulations of 6H-SiC p-n junctions show the possibility to operate corresponding devices at temperatures up to 1000 K thanks to their low reverse current densities. Comparison of a 6H-SiC 1200 V p-n--n+ diode with a corresponding silicon (Si) diode shows the higher switching performance of the 6H-SiC diode, while the forward power loss is somewhat higher than in Si due to the higher built-in voltage of the 6H-SiC p-n junction. This disadvantage can be avoided by a 6H-SiC Schottky diode. The on-resistances of Si, 3C-SiC, and 6H-SiC vertical power MOSFET's are compared by analytical calculations. At room temperature, such SiC MOSFET's can operate up to blocking capabilities of 5000 V with an on-resistance below 0.1 Ωcm2, while Si MOSFET's are limited to below 500 V. This is checked by calculating the characteristics of a 6H-SiC 1200 V MOSFET with PISCES. In the voltage region below 200 V, Si is superior due to its higher mobility and lower threshold voltage. Electric fields in the order of 4×106 V/cm occur in the gate oxide of the mentioned 6H-SiC MOSFET as well as in a field plate oxide used to passivate its planar junction. To investigate the high frequency performance of SiC devices, a heterobipolartransistor with a 6H-SiC emitter is considered. Base and collector are assumed to be out of 3C-SiC. Frequencies up to 10 GHz with a very high output power are obtained on the basis of analytical considerations 相似文献
5.
We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different structures of IMPATT diodes at sub-millimeter-wave frequencies up to 2.18 THz. The computer simulation study establishes the feasibility of the SiC based IMPATT diode as a high power density terahertz source. The most significant feature lies in the noise behavior of the SiC IMPATT diodes. It is noticed that the 6H-SiC DDR diode shows the least noise measure of 26.1 dB as compared to that of other structures. Further, it is noticed that the noise measure of the SiC IMPATT diode is less at a higher operating frequency compared to that at a lower operating frequency. 相似文献
6.
宽禁带SiC材料被认为是高性能电力电子器件的理想材料,比较了Si和SiC材料的电力电子器件在击穿电场强度、稳定性和开关速度等方面的区别,着重分析了以SiC器件为功率开关的电力电子装置对电力系统中柔性交流输电系统(FACTS)、高压直流输电(HVDC)装置、新能源技术和微电网技术领域的影响。分析表明,SiC电力电子器件具有耐高压、耐高温、开关频率高、损耗小、动态性能优良等特点,在较高电压等级(高于3 kV)或对电力电子装置性能有更高要求的场合,具有良好的应用前景。 相似文献
7.
Silicon carbide (SiC) CMOS circuits have been developed recently to provide monolithic control for SiC MOS power switching devices. Although SiC CMOS is not well suited for high-end microprocessor applications, it must provide the necessary response time performance required for safe operation in high-voltage power switching applications. Despite previous developments in SiC CMOS process technology; which have enabled digital circuit operation using a 5 V power supply, circuit switching speeds were in the microsecond range. An obvious way to improve circuit performance is to scale device lateral and vertical dimensions. This paper describes recent progress in the development of a submicron, single metal, p-well CMBS process technology using 6H-SiC. Conventional NMOS transistors are fabricated with 0.5-mm (drawn) channel lengths and exhibit acceptable short-channel effects. Conventional PMOS transistors exhibit punchthrough at 0.8-mm channel lengths and require considerable channel engineering efforts which are also presented. Several digital logic gates and a ring oscillator have been fabricated with nanosecond gate switching performance. Performance limiting factors like parasitic series resistance is also investigated 相似文献
8.
Hefner A.R. Jr. Singh R. Jih-Sheg Lai Berning D.W. Bouche S. Chapuy C. 《Power Electronics, IEEE Transactions on》2001,16(2):273-280
The electrical performance of silicon carbide (SiC) power diodes is evaluated and compared to that of commercially available silicon (Si) diodes in the voltage range from 600 V through 5000 V. The comparisons include the on-state characteristics, the reverse recovery characteristics, and power converter efficiency and electromagnetic interference (EMI). It is shown that a newly developed 1500-V SiC merged PiN Schottky (MPS) diode has significant performance advantages over Si diodes optimized for various voltages in the range of 600 V through 1500 V. It is also shown that a newly developed 5000 V SiC PiN diode has significant performance advantages over Si diodes optimized for various voltages in the range of 2000 V through 5000 V. In a test case power converter, replacing the best 600 V Si diodes available with the 1500 V SiC MPS diode results in an increase of power supply efficiency from 82% to 88% for switching at 186 kHz, and a reduction in EMI emissions 相似文献
9.
Juntao Li Chengquan Xiao Xingliang Xu Gang Dai Lin Zhang Yang Zhou An Xiang Yingkun Yang Jian Zhang 《半导体学报》2017,38(2):024003-4
This paper presents the design and fabrication of an etched implant junction termination extension(JTE) for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices. 相似文献
10.
Silicon carbide high-power devices 总被引:2,自引:0,他引:2
Weitzel C.E. Palmour J.W. Carter C.H. Jr. Moore K. Nordquist K.K. Allen S. Thero C. Bhatnagar M. 《Electron Devices, IEEE Transactions on》1996,43(10):1732-1741
In recent years, silicon carbide has received increased attention because of its potential for high-power devices. The unique material properties of SiC, high electric breakdown field, high saturated electron drift velocity, and high thermal conductivity are what give this material its tremendous potential in the power device arena. 4H-SiC Schottky barrier diodes (1400 V) with forward current densities over 700 A/cm2 at 2 V have been demonstrated. Packaged SITs have produced 57 W of output power at 500 MHz, SiC UMOSFETs (1200 V) are projected to have 15 times the current density of Si IGBTs (1200 V). Submicron gate length 4H-SiC MESFETs have achieved fmax=32 GHz, fT=14.0 GHz, and power density=2.8 W/mm @ 1.8 GHz. The performances of a wide variety of SiC devices are compared to that of similar Si and GaAs devices and to theoretically expected results 相似文献
11.
Peter G. Muzykov Qingchun Zhang Al Burk Tangali S. Sudarshan 《Microelectronics Reliability》2009,49(1):32-37
The silicon carbide bipolar junction transistor (BJT) is attractive for use in high-voltage switching applications offering high-voltage blocking characteristics, low switching losses, and is capable of operating at current densities exceeding 300 A/cm2. However, performance reliability issues such as degradation of current gain and on-resistance currently prohibit commercial production of 4H-SiC BJTs. This paper examines the physical mechanisms responsible for this degradation as well as the impact that these physical phenomena have on device performance. Results were obtained through the examination of several types of N-P-N BJT structures using various fabrication methodologies. Electron-beam induced current (EBIC) and potassium hydroxide (KOH) etching were used to characterize defect content in the material, before and after device current stress, when possible. It was found that Shockley stacking faults (stress-induced structures) associated with the forward voltage drift phenomenon in SiC bipolar diodes, also play a major role in the reduction of gain and an increase of on-resistance of the BJTs. However, results from some devices suggest that additional processes at the device periphery (edge of the emitter) may also contribute to degradation in electrical performance. Hence, it is essential that the sources of electrical degradation, identified in this paper, be eliminated for SiC BJTs to be viable for commercial scale production. 相似文献
12.
The emergence of silicon carbide (SiC) based power semiconductor switches, with their superior features compared with silicon (Si) based switches, has resulted in substantial improvement in the performance of power electronics converter systems. These systems with SiC power devices have the qualities of being more compact, lighter, and more efficient; thus, they are ideal for high-voltage power electronics applications. In this study, commercial Si pn and SiC Schottky diodes are tested and characterized, their behavioral static and loss models are derived at different temperatures, and they are compared with respect to each other. 相似文献
13.
14.
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode 总被引:1,自引:0,他引:1
Fujihira K. Tamura S. Kimoto T. Matsunami H. 《Electron Devices, IEEE Transactions on》2002,49(1):150-154
The p-i-n diodes were fabricated using 31 /spl mu/m thick n/sup -/- and p-type 6H-SiC epilayers grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum doping, respectively. The diode exhibited a very high breakdown voltage of 4.2 kV with a low on-resistance of 4.6 m/spl Omega/cm/sup 2/. This on-resistance is lower (by a factor of five) than that of a Si p-i-n diode with a similar breakdown voltage. The leakage current density was substantially lower even at high temperatures. The fabricated SiC p-i-n diode showed fast switching with a turn-off time of 0.18 /spl mu/s at 300 K. The carrier lifetime was estimated to be 0.64 /spl mu/s at 300 K, and more than 5.20 /spl mu/s at 500 K. Various characteristics of SiC p-i-n diodes which have an advantage of lower power dissipation owing to conductivity modulation were investigated. 相似文献
15.
与传统硅基功率二极管相比,碳化硅肖特基势垒二极管(SiC SBD)可提高开关频率并大幅减小开关损耗,同时有更高的耐压范围.设计并制作了具有场限环结终端和Ti肖特基接触的1.2 kV/30 A SiC SBD器件,研究了该SiC SBD在100~300℃时的反向恢复特性.实验结果表明,温度每上升100℃,SiC SBD反向电压峰值增幅为5%左右,而反向恢复电流与反向恢复时间受温度影响不大;温度每升高50℃,反向恢复损耗功率峰值降低5%.实验结果表明该SiCSBD在高温下能够稳定工作,且具有良好的反向恢复特性,适用于卫星、航空和航天探测、石油以及地热钻井探测等需要大功率、耐高温和高速器件的领域. 相似文献
16.
For Part I see ibid., vol.46, no.3, pp.478-84 (Mar. 1999). This paper outlines the dynamic reverse-breakdown characteristics of low-voltage (<250 V) small-area <5×10-4 cm2 4H-SiC p+-n diodes subjected to nonadiabatic breakdown-bias pulsewidths ranging from 0.1 to 20 μs 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn rectifiers. This result indicates that highly reliable low-voltage SiC rectifiers may be attainable despite the presence of elementary screw dislocations. However, the impact of elementary screw dislocations on other more useful 4H-SiC power device structures, such as high-voltage (>1 kV) pn junction and Schottky rectifiers, and bipolar gain devices (thyristors, ICBT's, etc.) remains to be investigated 相似文献
17.
This paper propose a novel reliability analysis approach for electrostatic discharge (ESD) stress on 4H-SiC junction barrier Schottky (JBS) diodes using the technology of Micro-Raman spectroscopy. Several conventional analysis are firstly used to determine the failure site after the JBS diodes are destructed by ESD stress, including optical microscope (OM), Photoemission microscopy (PEM) and scanning electron microscopy (SEM). Then, the Micro-Raman spectroscopy is applied to analyze element identification and crystal structure of micro failure site. The analysis reveals that high electric field and high temperature concentrate in the high-voltage termination, resulting in diode burnout and changing the physical microstructure of base SiC. Furthermore, in the micro failure site, 4H-SiC with different Raman spectrum from base 4H-SiC are clearly found, and carbon escapes out from base SiC by combustion, leaving a mixture of amorphous silicon and polysilicon, which is decomposed from the base SiC on the failure surface. 相似文献
18.
19.
High performance of high-voltage 4H-SiC Schottky barrier diodes 总被引:1,自引:0,他引:1
High performance of high-voltage rectifiers could be realized utilizing 4H-SiC Schottky barrier diodes. A typical specific on-resistance (Ron) of these devices was 1.4×103 Ω cm3 at 24°C (room temperature) with breakdown voltages as high as 800 V. These devices based on 4H-SiC had R on's lower than 6H-SiC based high-power rectifiers with the same breakdown voltage. As for Schottky contact metals, Au, Ni, and Ti were employed in this study. The barrier heights of these metals for 4H-SiC were determined by the analysis of current-voltage characteristics, and the reduction of power loss could be achieved by controlling the barrier heights 相似文献
20.
碳化硅(SiC)PiN二极管是应用在高压大功率整流领域中的一种重要的功率二极管。受SiC外延材料的载流子寿命限制以及常规SiC PiN二极管较低的阳极注入效率的影响,SiC PiN二极管的正向导通性能较差,这极大限制了其在高压大电流领域的应用。文章提出了一种带P型埋层的4H-SiC PiN二极管,较常规SiC PiN二极管增强了阳极区的少子注入效率,降低了器件的导通电阻,增大了正向电流。仿真结果表明,当正向偏压为5 V时,引入P型埋层的SiC PiN二极管的正向电流密度比常规SiC PiN二极管提升了52.8%。 相似文献