Millimetre-wave wideband reflection-type CPW MMIC phase shifter

A reflection-type coplanar waveguide (CPW) phase shifter fabricated using a standard monolithic microwave integrated circuit (MMIC) process is presented. Air-gap overlay CPW couplers were employed for wideband 3 dB coupling and low loss at millimetre wave. The two-stage cascaded analogue phase shifter showed insertion losses of 6.9 ± 1.6 dB, return losses > 10 dB, and maximum rms phase error of +5.5° for the relative phase shift from -20° to 135°, over a wideband 27 to 47 GHz     

Ultra compact, low loss, varactor tuned phase shifter MMIC atC-band

This paper presents a high yield, ultra compact, low loss phase shifter MMIC, realized with a commercial 0.6 μm GaAs MESFET process. Phase shift is enabled by varying the varactor capacitances of the lumped element equivalent of a transmission line. Continuously adjustable phase control over 90° is achieved from 4 GHz up to 6 GHz, with a loss of less than 2.2 dB. At 5.2 GHz, a loss of 1.2 dB and a loss variation of ±0.5 dB is measured. Phase and loss variations for several circuits from different wafers are within ±1° and ±0.1 dB, respectively, indicating low dependences on process variations. The phase shifter requires a circuit size of only 0.2 mm², which to our knowledge is the smallest size for a continuously adjustable passive phase shifter with comparable performance, reported to date     

Design and performance of a Ka-band monolithic phase shifterutilizing nonresonant FET switches

This paper describes design consideration and performance of a Ka-band monolithic phase shifter utilizing nonresonant FET switches. The switches show broad-band on/off characteristics up to 60 GHz without using inductors; thus, robust circuit design is possible for a switched-line phase shifter. To determine circuit topology, we introduce a schematic design approach. As a result, desired phase shift as well as good matching characteristics can be realized. The developed 4-bit monolithic phase shifter demonstrates an overall phase deviation less than 5° rms and an insertion loss variation less than 0.65 dB rms from 33 to 35 GHz. For all 16 states, the insertion loss is measured to be 13.1±1.1 dB and the VSWR is less than 1.6. The chip size of the monolithic phase shifter is 2.5 mm×2.2 mm     

A hybrid phase shifter circuit based on TlCaBaCuO superconductingthin films

A superconductor-semiconductor hybrid reflection-type phase shifter circuit has been designed, fabricated, and characterized for 180° phase bit with center frequency of 4 GHz and bandwidth of 0.5 GHz for operation at 77 K. All of the passive components of the phase shifter circuit such as input/output feed lines, 3 dB Lange coupler, impedance matching networks, and transmission lines consisted of thallium based superconducting TlCaBaCuO thin films of 4000 Å thickness on lanthanum aluminate substrate. Metal-Schottky field-effect-transistors (MESFET's) on GaAs semiconductor were used as active devices for switching action (on-state and off-state) in the phase shifter circuit. The phase shift and insertion losses were investigated as a function of frequency from 3.6 to 4.6 GHz at 77 K. The circuit exhibited a fairly flat response of 180° phase shift with a maximum deviation of less than 2° and a maximum insertion loss of 2 dB for on-state and 2.2 dB for off-state conditions over 0.5 GHz bandwidth at 4 GHz. The insertion losses were also fairly flat within the bandwidth. The insertion losses were constant between 50 and 80 K, giving the circuit a large range of operation at or below 77 K. The performance of this circuit as compared to a gold microstrip-semiconductor circuit designed identically was superior by a factor of 1.5, and may be due to lower conductor losses and lower surface resistance in the superconducting microstrips     

X波段4bit MMIC数字移相器的设计与实现

基于WIN 0.25 μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计并制备了一款X波段4 bit单片微波集成电路(MMIC)数字移相器.22.5°和45°移相单元采用开关滤波型拓扑结构,90°和180°移相单元采用高低通滤波型拓扑结构.对拓扑结构工作原理进行分析,并采用ADS2014软件完成电路的电磁仿真及优化.测试结果表明,该4 bit MMIC数字移相器获得了优良的宽带性能,且与仿真结果吻合良好.在8～ 13 GHz频带内,移相器的均方根(RMS)相位精度误差小于6.5°,插入损耗优于-6.8 dB,RMS插入损耗波动低于0.5 dB,输入回波损耗优于-13 dB,输出回波损耗优于-9.5 dB.该4 bit MMIC数字移相器在相对带宽为47％的X频段内性能优良,适用于有源相控阵雷达等通信系统中.     

A 10- to 21-GHz, low-cost, multifrequency, and full-duplexphased-array antenna system

This paper presents a novel phased-array antenna system with multifrequency, full-duplex operation, and wide-beam scanning. The system consists of a wideband power divider, a low-loss and low-cost multiline phase shifter controlled by dual piezoelectric transducers (PETS), a four-channel multiplexer, microwave monolithic integrated circuit (MMIC) amplifiers, and a stripline-fed Vivaldi antenna array. The multiline PET phase shifter has a low perturbation loss of less than 2 dB and a total loss of less than 4 dB up to 40 GHz, with a maximum phase shift of 650°. Using dual-aligned PETS for bidirectional phase shifting results in wide scan angles of 38.6°, 37.6°, 43°, and 40° for the four channels at 10, 12, 19, and 21 GHz, respectively. The four-channel diplexer demonstrates low insertion loss with high isolation between channels. The new multifrequency phased-array system provides wide-beam scanning and full-duplex capability using a simple, low-cost architecture. The system can be used for applications in mobile satellite communications     

A 0.13-μ m CMOS Phase Shifter Using Tunable Positive/Negative Refractive Index Transmission Lines

This letter presents a tunable positive/negative refractive index transmission line (TL) phase shifter utilizing active circuits. It comprises a microstrip TL loaded with series varactors and a shunt monolithic microwave integrated circuit (MMIC) to synthesize a tunable inductor. This implementation increases the phase tuning range and maintains the input and output matching of the phase shifter across the entire phase tuning range, while eliminating the need for bulky passive inductors. The phase shifter is capable of providing both positive and negative phase shifts. The MMIC tunable inductors are fabricated in a 0.13-mum CMOS process and operate from a 1.5-V supply. The phase shifter achieves a phase of -40deg to +34deg at 2.5GHz from a single stage with less than -19dB return loss, and better than 1.1-dB insertion loss at 2.5 GHz. The phase shifter has a 1-GHz bandwidth over which the return loss remains better than 12.1dB     

A wide range analog MMIC attenuator with integral 180° phaseshifter

A circuit topology is discussed for achieving a wide-range analog attenuator in MMIC form using enhancement mode FET's by combining it with a 90° phase shift network. By switching the phase shift network between a 90° phase lead high-pass structure and a 90° phase lag low-pass structure, a dual-purpose circuit is formed comprising both a variable attenuation and 180° phase shift function. The approach requires only a single control voltage for the attenuator and achieves an attenuation range of over 30 dB in L-band with less than 10° of phase imbalance over the range. In the low-loss state, the phase shifter achieves a 10° phase balance over a 250 MHz bandwidth with less than 0.3 dB of amplitude imbalance     

K-band HBT and HEMT monolithic active phase shifters using vector sum method

Two monolithic 3-bit active phase shifters using the vector sum method to K-band frequencies are reported in this paper. They are separately implemented using commercial 6-in GaAs HBT and high electron-mobility transistor (HEMT) monolithic-microwave integrated-circuit (MMIC) foundry processes. The MMIC HBT active phase shifter demonstrates an average gain of 8.87 dB and a maximum phase error of 11/spl deg/ at 18 GHz, while the HEMT phase shifter has 3.85-dB average measured gain with 11/spl deg/ maximum phase error at 20 GHz. The 20-GHz operation frequency of this HEMT MMIC is the highest among all the reported active phase shifters. The analysis for gain deviation and phase error of the active phase shifter using the vector sum method due to the individual variable gain amplifiers is also presented. The theoretical analysis can predict the measured minimum root-mean-square phase error 4.7/spl deg/ within 1/spl deg/ accuracy.     

Optimum design of waveguide E-plane stub-loaded phaseshifters

Broadband low-insertion-loss E-plane stub-loaded rectangular waveguide phase shifters are designed with the method of field expansion into normalized eigenmodes, which includes higher-order mode interaction between the step discontinuities. Computer-optimized three-stub prototypes of 90° differential phase shift with reference to an empty waveguide of appropriate length, designed for R140-band (12.4-18 GHz) and R320-band (26.5-40 GHz) waveguides, achieve typically ±0.5° phase shift deviation within about 20% bandwidth. For two-stub designs, the corresponding values are about +2.5°/-1° and 17%. Both designs achieve minimum return loss of 30 dB. The theory is verified by measurements of a compact R120-band (10-15 GHz) waveguide phase shifter design example milled from a solid block, showing measured insertion loss of about 0.1 dB and about +2.5°/-0.5° phase error between 10.7 and 12.7 GHz     

A Ku‐Band 5‐Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

This paper describes the performance of a Ku‐band 5‐bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5‐bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than 7.5° root‐mean‐square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5‐bit phase shifter, the insertion losses were 8.2 ± 1.4 dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5‐bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm × 1.65 mm. The packaged phase shifter demonstrated a phase error of less than 11.3° RMS, measured insertion losses of 12.2 ± 2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm × 6.20 mm.     

A low-cost 8 to 26.5 GHz phased array antenna using a piezoelectrictransducer controlled phase shifter

A new phased array antenna of wide bandwidth and good beam scanning angle has been developed using a low cost multiline phase shifter controlled by a piezoelectric transducer (PET) and a stripline fed Vivaldi antenna array. The multiline progressive PET phase shifter has a low perturbation loss of less than 2 dB and a total loss of less than 4 dB up to 40 GHz with a maximum phase shift of 480°. The proposed phased array antenna consists of four E- or H-plane Vivaldi antennas, a PET phase shifter, and a power divider. The phased array shows a wide beam scanning capability of ±27° over a wide bandwidth from 8 to 26.5 GHz covering X, Ku, and K bands     

A new high performance phase shifter using BaxSr1-xTiO3 thin films

In this paper, a new device topology has been proposed to implement parallel plate capacitors using Ba_xSr_1-xTiO₃ (BST) thin films. The device layout utilizes a single parallel capacitor and minimizes conductor losses in the base electrode. The new design simplifies the monolithic process and overcomes the problems associated with electrode patterning. An X-band 180° phase shifter has been implemented using the new device design. The circuit provided 240° phase shift with an insertion loss of only 3 dB at 10 GHz at room temperature. We have shown a figure of merit 93°/dB at 6.3 GHz and 87°/dB at 8.5 GHz. To our knowledge, these are the best figure of merit results reported in the literature for distributed phase shifters implemented using BST films at room temperature     

Passive broadband millimetre-wave uniplanar MMIC balun

A new uniplanar monolithic microwave integrated circuit (MMIC) balun using lumped circuits is presented. The proposed planar balun consists of a wideband Wilkinson power divider and a broadband 180° phase shifter using novel series and parallel LC reflective terminating circuits. To demonstrate the design methodology, a 24?44 GHz MMIC balun was realised as a 1.4 mm _{GaAs chip. The measured return losses for the unbalanced and balanced ports are better than 212, 210 and 27 dB, respectively. The measured amplitude and phase imbalance between the two output ports are less than 0.5 dB and 7°, respectively, and maximum insertion loss is 5 dB.}     

An antenna diversity MMIC vector modulator for HIPERLAN with lowpower consumption and calibration capability

The design and performance of a vector-modulator-based phase shifter for high-performance radio local area networks at 5.2 GHz is presented in this paper. Low power consumption is achieved using a 0.6-μm GaAs MESFET process. At a voltage supply of 1.4 V and with a current consumption between 3.5-7 mA, the gain is 0.6 dB and the 1-dB input compression point is -9 dBm. A full 360° phase control range is achieved by combining two of the three vectors, which have phase offsets of 120°, with variable amplitude. Chip size is only 1.3 mm ². The proposed vector modulator applies a new circuit configuration of variable-gain amplifiers to compensate their transmission phase errors. Within a gain control range of 20 dB, the phase error can be reduced to ±3°, which is about a factor of eight better than the results obtained by single FET amplifiers. A simple calibration procedure for the proposed vector modulators is presented to improve the manufacturing yield and to decrease the impact due to temperature changes and aging. A maximum gain error of ±0.8 dB and a maximum phase error of ±7° have been measured after applying this calibration to the designed vector modulator     

Millimeter-wave-band amplifier and mixer MMICs using a broad-band45° power divider/combiner

This paper demonstrates millimeter-wave-band amplifier and mixer monolithic microwave integrated circuits (MMIC's) using a broad-band 45° power divider/combiner. At first, we propose a broad-band 45° power divider/combiner, which combines a Wilkinson divider/combiner, 45° delay line, and 90° short stub. A coupling loss of 4.0±0.2 dB and a return loss and an isolation of more than 19 dB with 45±1° phase difference was obtained from 17 to 22 GHz for the fabricated K-band MMIC 45° power divider/combiner. Next, a parallel amplifier using the broad-band 45° power divider/combiner, which can be used in a power-combining circuit configuration requiring no isolator, is shown. Comparing the transmitter intermodulation generated in the parallel amplifier using the broad-band 45° power divider/combiner and that generated in the one using the conventional type, the broad-band suppression effect was confirmed. Finally, an application of the broad-band 45° power divider/combiner to a single-sideband (SSB) subharmonically pumped (SHP) mixer requiring no IF switch is shown. In an RF frequency range from 22.89 to 26.39 GHz, the fabricated K-band MMIC mixer achieved (for up-conversion) the good results of more than -13-dB conversion gain and more than 24-dB image-rejection ratio. These contribute significantly to the miniaturization of millimeter-wave communication equipment     

InGaAs microwave switch transistors for phase shifter circuits

A new InGaAs insulated-gate FET (IGFET) with 1 μm gate length and three different gate widths has been designed, fabricated and characterized as switch devices for microwave control applications in phase shifter circuits. The devices employed a plasma deposited silicon dioxide gate insulator and had multiple air bridged source regions. The details of the DC current-voltage (I-V) characteristics and small signal S-parameter measurements up to 20 GHz are presented. The switch IGFET's had a drain saturation current density of 300 mA/mm gate width with breakdown voltages of higher than 35 V. An insertion loss of 1.0, 0.6, and 0.4 dB at 10 GHz and 1.4, 0.8, and 0.4 dB at 20 GHz have been measured for the 300, 600, and 1200 μm gate width IGFET's, respectively. Equivalent circuit models fitted to the measured S-parameters for IGFET's yielded on-state resistances from 10.7 to 3.3 Ω, off-state resistances from 734.4 to 186.8 R and off-state capacitances from 0.084 to 0.3 pF as the gate width is increased from 300 to 1200 μm The simulation results using IGFET models for the phase shifter circuits indicated a maximum phase error of 0.11°, 0.26°, and 0.479 with 0.74, 0.96, and 1.49 dB maximum insertion loss and greater than 33, 26, and 19 dB return loss for the 11.25°, 22.5°, and 45° phase bits, respectively, over the 9.5-10.5 GHz frequency band     

Optimum field theory design of broad-band E-plane branchguide phase shifters and 180° couplers

Optimum rectangular waveguide E-plane branch guide phase shifters and 180° branch guide couplers are designed with the rigorous method of field expansion into normalized eigenmodes. The design includes both the higher order mode interaction between the step discontinuities and the finite step and branch heights. The phase shifter design applies the Schiffman principle to branch guide couplers where two ports are short-circuited. The 180° coupler design combines the advantage of the broadband potential of multiple-branch couplers with the low-insertion-loss qualities of E-plane stub-loaded phase shifters. A computer-optimized phase shifter prototype for the waveguide Ku-band (12-18 GHz) shows a 90°±1° differential phase shift with reference to an empty waveguide within about 23% bandwidth. Five-branch three-stub coupler prototypes, designed for 3±0.2 dB coupling, for the waveguide Ku- and Ka-bands (26-40 GHz) achieve a 180°±1° differential phase shift at the output ports within about 19% bandwidth, as well as more than 30 dB isolation and return loss. The theory is verified by measured results     

Miniaturised 45° power divider using three-dimensional MMICtechnology

A miniaturised 45° power divider using three-dimensional MMIC technology is described. The divider comprises stacked thin-film microstrip lines that sandwich a ground plane between them. It has an area of only 0.43 mm², and it exhibits a coupling of 4.5±0.2 dB and a phase difference of 45±1° from 28 to 33 GHz     

Ultracompact reflective-type phase shifter MMIC at C-band with360° phase-control range for smart antenna combining

An ultracompact reflective-type monolithic microwave integrated circuit (MMIC) phase shifter is presented, fabricated using a commercial 0.6-μm GaAs MESFET process. The circuit has been developed for low-cost smart antenna receivers, operating in accordance to the IEEE 802.11a and the high-performance radio local area network (HIPERLAN) wireless network standards at C-band. Capacitance control, required for phase control, is performed by usual MESFETs with capacitance control ratios (C_max/C_min) of less than four. The impact of the reflective terminations on the maximum phase-control range and the corresponding loss is discussed. This investigation comprises single capacitive terminations, single resonated terminations, and terminations with two resonated loads-in parallel (DRL). With the DRL terminations, phase-control ranges of over 360° have been reached even with such limited capacitance control ranges. A transformation network is proposed for the DRL termination to reduce loss and loss variations. In this configuration, maximum signal losses of 9 and 3 dB, and 1-dB input compression points of higher than 2 and 8 dBm were measured for the phase shifter at 5.2 GHz within phase-control ranges of 360° and 90°, respectively. The branch-line coupler of the phase shifter has been realized by using lumped elements, thereby minimizing the circuit size. The total chip area is only 0.9 mm², which to our knowledge is the smallest size for a passive reflective-type phase shifter with 360° phase-control range reported to date