共查询到18条相似文献,搜索用时 125 毫秒
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针对当前大功率的全桥ZVZCS变换器存在功耗过高,实用率不高的问题,提出一种实用的电路拓扑结构,并对该电路拓扑进行了简单的分析。该变换器超前管采用MOSFET,实现了零电压开通和关断,滞后管采用IGBT,实现了零电流开通和关断。对变换器主电路各参数进行选定后,通过采集的相关波形,验证了设计的变换器的正确性,将该变换器应用在电力操作电源上运行,性能优良,满足了市场要求。 相似文献
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基于准谐振型软开关的高频开关电源变换器 总被引:2,自引:1,他引:2
传统高频开关电源变换电路采用硬开关技术,电路功耗大,承受电压、电流应力高。为了克服硬开关技术中开关管在有电流通过的情况下被强制关断,有电压情况下被强制导通而带来的各种不利因素,采用准谐振型软开关技术,即零电流开关(ZCS)准谐振变换器、零电压开关(ZVS)准谐振变换器,由电感、电容组成谐振回路,利用电感、电容之间的能量交换,使主开关管在零电压下导通或零电流下截止,达到了减少开关损耗及电磁干扰的目的。软开关技术在新型开关电源中广泛采用。 相似文献
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对模数转换器中的传统开关电路的导通电阻进行了详细的理论分析,提出了一种互补型栅压自举开关电路.该电路结构相比于传统开关,通过少量的功耗代价换取了更优的频域性能,在不同工艺角下具有更好的鲁棒性,适用于先进工艺下的低电压工作环境.互补型栅压自举开关电路采用28 nm工艺设计,在1V的电源电压下,对800fF的负载电容进行速率为800 MS/s的采样,在低频输入下(181.25 MHz)实现的无杂散动态范围(SFDR)为89 dB,四倍奈奎斯特输入频率下(1 556 MHz)实现的SFDR为65 dB,开关电路面积为80 μm×20 μm. 相似文献
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介绍仅用一个主开关管及一个辅助开关提高设备的输入侧三相交流功率因数的零电流关断(ZCS)升压型变换器的基本电路,说明升压电感电流工作在不连续状态的必要性。采用三相整流电压的6次谐波前馈(注入),以减小三相电源的5次庇波电流。减小主开关管关断损耗采用了零电流关断电路。 相似文献
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Face to the growing number of applications using DC–DC power converters, the improvement of their reliability is subject to an increasing number of studies. Especially in safety critical applications, designing fault-tolerant converters is becoming mandatory. In this paper, a switch fault-tolerant DC–DC converter is studied. First, some of the fastest Fault Detection Algorithms (FDAs) are recalled. Then, a fast switch FDA is proposed which can detect both types of failures; open circuit fault as well as short circuit fault can be detected in less than one switching period. Second, a fault-tolerant converter which can be reconfigured under those types of fault is introduced. Hardware-In-the-Loop (HIL) results and experimental validations are given to verify the validity of the proposed switch fault-tolerant approach in the case of a single switch DC–DC boost converter with one redundant switch. 相似文献
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Moschopoulos G. Jain P.K. Yan-Fei Liu Joos G. 《Power Electronics, IEEE Transactions on》1999,14(4):653-662
A zero-voltage-switched (ZVS) pulsewidth-modulated (PWM) boost converter with an energy feedforward auxiliary circuit is proposed in this paper. The auxiliary circuit, which is a resonant circuit consisting of a switch and passive components, ensures that the converter's main switch and boost diode operate with soft switching. This converter can function with PWM control because the auxiliary resonant circuit operates for a small fraction of the switching cycle. Since the auxiliary circuit is a resonant circuit, the auxiliary switch itself has both a soft turn on and turn off, resulting in reduced switching losses and electromagnetic interference (EMI). This is unlike other proposed ZVS boost converters with auxiliary circuits where the auxiliary switch has a hard turn off. Peak switch stresses are only slightly higher than those found in a conventional PWM boost converter because part of the energy that would otherwise circulate in the auxiliary circuit and drastically increase peak switch stresses is fed to the load. In this paper, the operation of the converter is explained and analyzed, design guidelines are given, and experimental results obtained from a prototype are presented. The proposed converter is found to be about 2%-3% more efficient than the conventional PWM boost converter 相似文献
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《Industrial Electronics, IEEE Transactions on》2009,56(6):2108-2114
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介绍了典型的零电流转换ZCT(Zero Current Transition)PWM直流变换器的基本工作原理,分析了其存在的主开关电流应力大和辅开关硬关断的问题,提出了一种改进型开关电路。对其拓扑结构和工作原理进行了详细分析,设计了电路参数,并对其进行了Pspice仿真。结果证明此改进能够使辅助开关近似零电流关断,提高了变换器的性能。 相似文献
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A new ZVT-PWM DC-DC converter 总被引:7,自引:0,他引:7
In this paper, a new active snubber cell that overcomes most of the drawbacks of the normal "zero voltage transition-pulse width modulation" (ZVT-PWM) converter is proposed to contrive a new family of ZVT-PWM converters. A converter with the proposed snubber cell can also operate at light load conditions. All of the semiconductor devices in this converter are turned on and off under exact or near zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional voltage and current stresses on the main switch and main diode occur. Also, the auxiliary switch and auxiliary diodes are subjected to voltage and current values at allowable levels. Moreover, the converter has a simple structure, low cost, and ease of control. A ZVT-PWM boost converter equipped with the proposed snubber cell is analyzed in detail. The predicted operation principles and theoretical analysis of the presented converter are verified with a prototype of a 2 kW and 50 kHz PWM boost converter with insulated gate bipolar transistor (IGBT). In this study, a design procedure of the proposed active snubber cell is also presented. Additionally, at full output power in the proposed soft switching converter, the main switch loss is about 27% and the total circuit loss is about 36% of that in its counterpart hard switching converter, and so the overall efficiency, which is about 91% in the hard switching case, increases to about 97% 相似文献