无源UHF RFID电子标签模拟前端设计

提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.     

应用于能量收集中的接口电路的设计

针对从周围环境中收集能量的微型发电机输出功率和电压非常小,无法直接应用的问题。文中设计了一种超低输入电压、低功耗且高效的接口电路。该接口电路包含两级,第一级是无源级和仅由一个有源二极管组成的第二级。为降低有源二极管的功耗,采用一个工作在亚阈值区的衬底输入比较器用来驱动MOS开关。设计采用TSMC 018 μm 标准CMOS工艺,使用Cadence Spectre在室温的条件下进行仿真。结果表明,在输入电压为500 mV（100 Hz）,负载电阻为50 kΩ时整流器的电压转换率为977%,能量转换率为913%。整流器能够在输入电压振幅为320 mV以上实现高效整流。     

无源UHF RFID电子标签模拟前端设计

提出了一种符合ISO/IEC 18000-6B标准的高性能无源UHF RFID电子标签模拟前端,在915MHz ISM频带下工作时其电流小于8μA.该模拟前端除天线外无外接元器件,通过肖特基二极管整流器从射频电磁场接收能量.该RFID模拟前端包括本地振荡器、时钟产生电路、复位电路、匹配网络和反向散射电路、整流器、稳压器以及AM解调器等.该芯片采用支持肖特基二极管和EEPROM的Chartered 0.35μm 2P4M CMOS工艺进行流片,读取距离大于3m,芯片面积为300μm×720μm.     

利用环境电磁波为无线传感器节点供电新方案

采用无线传感器节点的环境电磁波能量获取关键技术,设计了一种可行的供电方案.通过对所处环境的频谱能量分析和采用合适的天线及转换电路,收集到足够能量驱动节点工作.同时设计了带有唤醒机制的低功耗电源管理电路,以适应节点在环境电磁波能量较少地区的工作.通过获取能量稳定性、有效工作范围和传感器节点的性能相关测试和分析,验证了方案...     

一种用于电磁能量收集的可扩展宽频超表面能量收集器

设计了一种用于X波段和Ku波段电磁能量收集的可扩展宽频超表面能量收集器,其由周期性结构单元、整流器和负载组成。通过结构单元相互连接构建能量传输通道,实现入射能量的传输和聚集,进而增强了超表面能量收集器捕获能量的能力。通过超表面阵列和整流器的共面集成设计,减少了能量传输中的功率损耗,并简化了结构。仿真结果表明,该超表面能量收集器在6.5～19 GHz频带下具有良好的吸收,在12.75 GHz谐振频率下具有98%的半功率带宽。对制备的10×9的超表面有限阵列进行测试,结果表明,在可用输入功率为16 dBm时,超表面能量收集器的射频-直流转换效率最高可达56.2%。设计的超表面能量收集器具有宽带吸收、阵列数量可扩展的特点,能够在不同环境下高效地收集电磁能量。     

基于可重构天线的能量收集器特性研究

基于频率可重构原理设计的五频段天线,通过调节寄生单元和馈电线的长度来改变天线的局部结构,从而获得不同的工作频段。该天线可在470~770MHz,800~930MHz,934~960MHz,1 854~1892MHz,2 407~2 509MHz五种频段之间实现可重构,覆盖了无线通信系统工作频段,各个状态具有较好的特性。在此基础上,搭建的能量收集器可以对接收到的信号能量进行收集,环境能量收集器系统包括可重构天线、匹配网络和整流升压。通过仿真软件ADS和HFSS对收集器各部分优化、仿真,仿真结果显示各部分性能良好,该收集器的灵敏度较高。最后经过实测,佐证了收集器的整体效率较高,最大收集效率可达58...     

小面积低功耗RFID射频前端电路设计

提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案.射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块,射频的工作频率为860～960 MHz.基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺,设计了RFID射频前端电路.采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.     

小面积低功耗RFID射频前端电路设计

提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案.射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块,射频的工作频率为860～960 MHz.基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺,设计了RFID射频前端电路.采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.     

小面积低功耗RFID射频前端电路设计

提出了一个适用于EPC Gen2协议的小面积低功耗RFID射频前端电路的设计方案. 射频前端电路包括整流器、ASK解调器、ASK和BPSK调制器和传感器模块，射频的工作频率为860～960MHz. 基于具有不挥发存储器和肖特基二极管选项的0.35μm CMOS工艺，设计了RFID射频前端电路. 采用开关电容电路技术实现了小面积低功耗RFID射频前端电路.     

基于环境微弱能量收集的低阈值CMOS电路设计

环境中存在着丰富的电磁波能量,而人体运动产生的机械能则是一种不受外界干扰非常稳定的能源,这些能源的存在使设备为自身供电成为可能.由于射频电磁波能量和振动能量密度低的特性,设计了一种能够匹配低功耗低电压的复合能量收集与管理电路.该电路采用0.18 μm标准CMOS工艺,对电源转化模块、电源调节模块(整流电路、滤波电路、升压电路,以及为升压电路提供时钟信号的振荡电路)和储能模块进行了分析与设计.整流电路的最低输入电压为200 mV,整流效率达到75％.升压电路采用新型电荷泵电路,具有4.8倍升压效果,输出电压最高达到970 mV,电压纹波率为0.5％.当输入电流为50 μA时,该电路转换率为10％,输出平均功率为1.14μW.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks