高弯曲性薄型层压基材——NFX系列

概述了高弯曲性层压型基材——NFX系列的开发,它的特征在于高弯曲性和低刚性,它是FPC用薄型高弯曲性2层FCCL。     

应用6—σ方法分析薄型覆铜板Hi—Pot试验失败原因与改进方案

应用6-σ方法、工具研究分析了薄型覆铜板Hi-Pot试验失败的原因并提出了针对性的改进方案。     

日本多家CCL厂在今年JPCA展览会上推出薄型化覆铜板

据日本《日经BP社》报道，当前BGA、CSP和SiP（系统级封装）等领域的封装基板厚度，其发展趋势越来越走向薄型化。这样可以降低封装的安装高度，或者在同样的安装高度下通过增加配备的芯片数，提高产品功能的需求越来越高。     

薄型电子布的价格低迷是制约其市场的关键

由于电子产品的轻、薄、短、小、高密度组装，促使印制电路板迅速向多层、超多层方向发展，以“薄”为特点的封装用基板也成为印制板用新型覆铜板的一大热点。这一切又都离不开薄型、极薄型与超极薄型电子布。     

对适应无铅化FR-4型覆铜板性能的探讨（上）

电子安装采用无铅焊料,对PCB的基板材料——FR-4型覆铜板,在加工中有哪些工艺上的改变、需要CCL提高哪些性能上的要求等问题,进行了初步的分析、探讨。     

覆铜板技术（连载四）

在电子产品和家用电器的领域中，对覆铜板而言，环氧覆铜板是应用最广泛的一种产品，随着电子计算机的改进和普及，加速了印制电路的高密度化和高精细化。在这种情况下，发展起来的覆铜板，主要是环氧覆铜板，其代表性的产品有：     

挠性覆铜板

本文主要介绍挠性覆铜板的组成、制造方法及技术发展。     

薄型IC封装用无卤素覆铜板基材

在研发成功低吸水性分子主链和捕捉金属离子型树脂的基础上．研制成功了绝缘可靠性优良的薄型IC封装用无卤素覆铜板基材。因为这种材料当绝缘层厚度为40μm时就有良好的绝缘可靠性．所以能实现厚度为100μm封装结构基板。而且在无卤素的情况下能达到UL94-V级的阻燃性，并能做到符合环保要求的无铅焊锡装配。     

用于挠性覆铜板的聚酰亚胺膜

本文主要介绍用于挠性覆铜板(FCCL)的聚酰亚胺膜，其中包括原材料、制造方法和产品特性。     

日本在覆铜板用新型环氧树脂及其固化剂方面的新发展

近年来,在印制电路板高性能化、高密度化、薄型化以及环保严要求(无铅兼容、无卤化等)的发展下,覆铜板作为PCB的重要基板材料,在制造中对主要原材料——环氧树脂在性能、品种上有了更高的需求。为此,近年日     

Anomalously high tensile creep rates from thin cast Sn3.9Ag0.6Cu lead-free solder

The present paper compares the creep and microstructural changes during creep behavior of bulk and thin cast forms of Sn3.9Ag0.6Cu. The processing parameters of the thin cast material were selected to result in a very fine microstructure analogous to what occurs in very small size solder electronic interconnections. We found that the thin cast material is less creep resistant than the bulk material. A comparison of Ag element maps between as-crept bulk and thin cast material shows that the relevant climb process occurs in a very different environment in the bulk material as compared to the thin cast material. In the bulk material, the relevant climb process occurs within a finely dispersed intermetallic compound (IMC) eutectic, which covers broad areas within the material. In the thin cast material, the relevant climb process occurs primarily in the beta-Sn grains that continuously surround isolated, coarse IMC particles. This resulted in the activation energy of the bulk material being larger than that for the thin cast material. Finally, it is important to note that the strength deficiency of the thin cast material is persistent—once the material is cast in thin cast form, it will remain weak in comparison to the bulk material. Therefore, using data obtained from bulk material samples for the construction of thermomechanical models of very small scale solder interconnections is likely to result in significant, intrinsic errors.     

Silicon and Nanoscale Metal Interface Characterization Using Stress-Engineered Superlayer Test Methods

Thin film layers are utilized in emerging microelectronics, optoelectronics, and microelectromechanical systems (MEMS) devices. Typically, these thin film layers are composed of different materials with dissimilar properties. A common mode of failure for thin films is delamination caused by external loading or intrinsic stress present in the materials. To characterize bonded thin film material systems, it is necessary to measure the interfacial fracture toughness. When material thicknesses approach micro- and nanoscales, interfacial fracture toughness measurement is a challenging task. Accordingly, innovative test techniques need to be developed to study interfacial fracture parameters. The ongoing research at Georgia Institute of Technology is developing fixtureless delamination test techniques that can be used to measure interfacial properties of micro- and nanoscale thin films. The single substrate decohesion test (SSuDT) and the single-strip decohesion Test (SSDT) are such fixtureless tests under development. In these tests, a thin film interface material of interest is deposited on a substrate. Then, delamination is driven by a superlayer material on top of the interface material. This superlayer material is sputter deposited and has high intrinsic stress. A deposited release layer material allows for the contact area between the interface material and the substrate to be controlled. These tests differ in geometry, but share the same generic methodology and can be used for a number of material systems over a wide range of mode mixities. This paper presents the methodology and implementation of the SSuDT and SSDT tests and compares results to better understand their scope. A case study of the interfacial fracture toughness as a function of mode mixity for titanium and silicon interface was performed.      

Investigations of Indium Tin Oxide—Barium Strontium Titanate–Indium Tin Oxide Heterostructure for Tunability

This letter reports for the first time the interesting behavior of the interface between indium tin oxide (ITO) as a high resistive electrode and barium strontium titanate tunable paraelectric thin film material. The interface is consisting of barium strontium titanate (BST) thin film dielectric material sandwiched between two ITO high resistive layers, all are integrated above glass substrate. When dc field is applied between the ITO layers, the BST thin film material properties are tuned. It is found that the ITO/BST/ITO heterostructure exhibits a tunable resistor performance. To our knowledge; these results are never reported.     

非晶衬底上择优取向ZnO纳米晶薄膜的溶胶-凝胶法制备技术

使用一种新的溶胶-凝胶技术制备了ZnO固体薄膜,此技术的特点在于操作简单、环保、实用.此技术可在非晶基片(如玻璃、石英等)上制备c轴择优取向的大面积ZnO纳米晶薄膜.薄膜的红外透过率高,具备制作无机红外-紫外双色探测器的紫外光敏材料和光伏有机太阳能电池、有机红外探测器的透明导电电极等光电子器件的材料应用价值.     

Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques

Advanced micro-mechanical characterization methods provide material properties of thin films for modeling thermo-mechanical behavior of thin films for micro-electronic applications. Here, we focus on the local measurement method of nanoindentation for finding visco-elastic properties, and a global method of substrate curvature testing that provides linear elastic properties. Our specimen SiLK, Dow chemicals, is a low-k dielectric thin polymer film with a thickness of 400 nm, 6 and 8 μm, deposited on Si substrate. Our results show temperature dependent linear elastic and linear visco-elastic material properties for thin film materials.     

磁控射频溅射法制备光波导薄膜研究

采用磁控射频溅射法制备了用作光波导器件的玻璃薄膜。通过选取不同的溅射材料,在不同溅射条件下制备的玻璃薄膜的光学参数进行的测量、比较,并对其作为光波导的性能进行研究,通过理论上推导与计算,得出了在１,５５ｕｍ窗口下制备光波导器件的玻璃薄膜所应具备的溅射条件。     

下一代汽车电子的刚-挠性PCB

讨论了用于汽车电子的刚-挠电路板材料,包括了多(动态)可挠曲的(聚酰亚胺)挠性电路材料、少(半)可挠曲的(薄FR-4挠性)电路材料和中等可挠曲的黄色-挠曲电路材料.     

Effect of anode material on high-field-induced hole current in SiO2 layer of metal-oxide-semiconductor field-effect transistor

The effects of three anode materials: polysilicon (semiconductor), aluminium and gold (metals) on hole currents in oxide layers of MOSFET's are presented for both thin (19 nm) and the thick (78 nm) oxide layers. Similar anode material effects were observed in both the thin and the thick oxide layers. The results suggest that anode hole generation plays the same role for both the thin and the thick oxide layers in our experiment. The larger the anode electron barrier height, the larger the hole current generation efficiency. The observable anode material effect decreases with increase of oxide electric field. When the oxide electric field is larger than 10 MV/cm, the observable anode material effect disappears. Our results show that the anode hole generation is the dominant mechanism on both the thin and thick oxide layers for oxide electric fields smaller than 10 MV/cm. For oxide electric fields larger than 10 MV/cm, further analysis is needed to identify the dominant mechanism of high-field-induced oxide hole currents     

Sol–gel deposited SiO2 and hybrid low dielectric constant thin films

The paper presents the comparative analysis of effect of hydrochloric (HCl), hydrofluoric (HF) acid catalyst and organic material methylmethacrylate (MMA) on dielectric constant of thin films. The dielectric constant of thin film obtained by using HCl catalyst is 3.63 which have been successfully reduced to 2.97 for hybrid thin films via incorporation of carbon. The deposited low k dielectric thin films observed to have good adhesion with p-silicon substrate and hence pertinent for interlayer dielectric (ILD) in ultra-large scale integrated (ULSI) circuits applications. The deposited films have been characterized by ellipsometer for refractive index, further material compositions have been studied by using Fourier transform infrared (FTIR) spectroscopy and energy dispersive spectroscopy (EDAX).     

Study of electromagnetic wave propagation through dielectric slab doped randomly with thin metallic wires using finite element method

A new numerical simulation method using the finite element methodology (FEM) is presented to study electromagnetic propagation through a dielectric material slab doped randomly with thin and short metallic wires. The FEM approach described in many standard text books and published papers, is appropriately modified to account for the presence of thin and short metallic wires. Using this modified FEM approach, the transmission and reflection characteristics of a material slab (homogeneous dielectric slab doped randomly with thin and short metallic wires) placed in an X-band rectangular waveguide are estimated. The estimated results are compared with the numerical results obtained using the CST microwave studio simulation tool.