Novel thermoelectric materials based on boron-doped silicon microchannel plates

The thermoelectric properties of boron-doped silicon microchannel plates (MCPs) were investigated. The samples were prepared by photo-assisted electrochemical etching (PAECE). The Seebeck coefficient and electrical resistivity at room temperature (25 °C) were measured to determine the thermoelectric properties of the samples. In order to decrease the very high resistivity, boron doping was introduced and by modulating the doping time, a series of samples with different resistivity as well as Seebeck coefficient were obtained. Boron doping changed the electrical resistivity of the samples from 1.5 × 10⁵ Ω cm to 5.8 × 10⁻³ Ω cm, and the absolute Seebeck coefficient deteriorated relatively slightly from 674 μV/K to 159 μV/K. According to the Seebeck coefficient and electrical conductivity, the power factor was calculated and a peak value of 4.7 × 10⁻¹ mW m⁻¹ K⁻² was obtained. The results indicate that silicon MCPs doped with boron are promising silicon-based thermoelectric materials.     

Effect of deposition temperature on the structural and thermoelectric properties of bismuth telluride thin films grown by co-sputtering

Thermoelectric bismuth telluride thin films were prepared on SiO₂/Si substrates by radio-frequency (RF) magnetron sputtering. Co-sputtering method with Bi and Te targets was adopted to control films' composition. Bi_xTe_y thin films were elaborated at various deposition temperatures with fixed RF powers, which yielded the stoichiometric Bi₂Te₃ film deposition without intentional substrate heating. The effects of deposition temperature on surface morphology, crystallinity and electrical transport properties were investigated. Hexagonal crystallites were clearly visible at the surface of films deposited above 290 °C. Change of dominant phase from rhombohedral Bi₂Te₃ to hexagonal BiTe was confirmed with X-ray diffraction analyses. Seebeck coefficients of all samples have negative value, indicating the prepared Bi_xTe_y films are n-type conduction. Optimum of Seebeck coefficient and power factor were obtained at the deposition temperature of 225 °C (about − 55 μV/K and 3 × 10^− 4 W/K²·m, respectively). Deterioration of thermoelectric properties at higher temperature could be explained with Te deficiency and resultant BiTe phase evolution due to the evaporation of Te elements from the film surface.     

Rapid microwave synthesis of indium filled skutterudites: An energy efficient route to high performance thermoelectric materials

Filled skutterudites are promising thermoelectric materials due to reduced thermal conductivity upon inserting a guest atom or ‘rattler’ into the CoSb₃ structure. By using an indium rattler dimensionless Figure of Merit (ZT) values >1 at 650 K have been reported. The conventional synthesis of these compounds typically takes several days (∼3 days) to obtain the final well-sintered material for property measurements. We report here a microwave-assisted synthesis method that reduces the initial calcination time from 2 days to 2 min. This route significantly reduces the time needed to produce materials suitable for property and device testing.     

Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 °C

In order to investigate the high temperature application of surface activated silicon/silicon wafer bonding, the wafers were bonded at room temperature and annealed up to 600 °C followed by optical, electrical, mechanical and nanostructure characterization of the interface. Void-free interface with high bonding strength was observed that was independent of the annealing temperature. The bonding strength was as high as 20 MPa. The normalized interfacial current density was increased with the increase in the annealing temperature. A thin interfacial amorphous layer with a thickness of 8.3 nm was found before annealing, which was diminished at 600 °C. A correlation between the current density and nanostructure of the interface was observed as a function of the annealing temperature. The high quality silicon/silicon bonding indicates its potential use not only in low temperature microelectronic applications, but also in high temperature harsh environments.     

Room temperature plasma oxidation: A new process for preparation of ultrathin layers of silicon oxide, and high dielectric constant materials

In this paper we present basic features and oxidation law of the room temperature plasma oxidation, (RTPO), as a new process for preparation of less than 2 nm thick layers of SiO₂, and high-k layers of TiO₂. We show that oxidation rate follows a potential law dependence on oxidation time. The proportionality constant is function of pressure, plasma power, reagent gas and plasma density, while the exponent depends only on the reactive gas. These parameters are related to the physical phenomena occurring inside the plasma, during oxidation. Metal-Oxide-Semiconductor (MOS) capacitors fabricated with these layers are characterized by capacitance-voltage, current-voltage and current-voltage-temperature measurements. Less than 2.5 nm SiO₂ layers with surface roughness similar to thermal oxide films, surface state density below 3 × 10¹¹ cm^− 2 and current density in the expected range for each corresponding thickness, were obtained by RTPO in a parallel-plate reactor, at 180 mW/cm² and pressure range between 9.33 and 66.5 Pa (0.07 and 0.5 Torr) using O₂ and N₂O as reactive gases. MOS capacitors with TiO₂ layers formed by RTPO of sputtered Ti layers are also characterized. Finally, MOS capacitors with stacked layers of TiO₂ over SiO₂, both layers obtained by RTPO, were prepared and evaluated to determine the feasibility of the use of TiO₂ as a candidate for next technology nodes.     

A simple, low-cost approach to prepare flexible highly conductive polymer composites by in situ reduction of silver carboxylate for flexible electronic applications

In recent years, efforts to prepare flexible highly conductive polymer composites at low temperatures for flexible electronic applications have increased significantly. Here, we describe a novel approach for the preparation of flexible highly conductive polymer composites (resistivity: 2.5 × 10⁻⁵ Ω cm) at a low temperature (150 °C), enabling the wide use of low cost, flexible substrates such as paper and polyethylene terephthalate (PET). The approach involves (i) in situ reduction of silver carboxylate on the surface of silver flakes by a flexible epoxy (diglycidyl ether of polypropylene glycol) to form highly surface reactive nano/submicron-sized particles; (ii) the in situ formed nano/submicron-sized particles facilitate the sintering between silver flakes during curing. Morphology and Raman studies indicated that the improved electrical conductivity was the result of sintering and direct metal-metal contacts between silver flakes. This approach developed for the preparation of flexible highly conductive polymer composites offers significant advantages, including simple low temperature processing, low cost, low viscosity, suitability for low-cost jet dispensing technologies, flexibility while maintaining high conductivity, and tunable mechanical properties. The developed flexible highly conductive materials with these advantages are attractive for current and emerging flexible electronic applications.     

Texture development of Ca3Co4O9 thermoelectric oxide by high temperature plastic deformation and its contribution to the improvement in electric conductivity

High temperature uniaxial compression is conducted on Ca₃Co₄O₉ layered cobaltite, in order to achieve a thermoelectric oxide with low resistivity by the development of (0 0 1) texture. It is found that flow stress varies depending on deformation temperature and strain rate. Development of a sharp texture having the maximum (0 0 1) pole density of about 33 times as high as the random level is achieved. It is found that the high temperature compression process is quite effective for the simultaneous achievement of densification and (0 0 1) texture development. It is experimentally confirmed that resistivity decreases drastically by the construction of a sharp (0 0 1) texture.     

Thermal oxidation properties of titanium nitride and titanium-aluminum nitride materials — A perspective for high temperature air-stable solar selective absorber applications

Air-stable high temperature solar selective surfaces have the advantages of simplifying the design, and reducing the cost of solar thermal energy conversion systems. Previous studies on the properties of titanium nitride (TiN) or titanium-aluminum nitride (TiAlN) films suggested that these materials could be a candidate for solar energy applications. In this paper, we report that oxidation occurs at 450 °C, and an oxide layer of about 20-30 nm was formed after only a few minutes of heat treatment with oxygen. The thickness of the oxide layer is comparable to the thickness of the absorbing layer of the solar thermal selective absorbers, which can affect significantly the solar thermal performance. TiN produced at higher nitrogen pressure (2.1 Pa with 40% nitrogen in argon) could absorb oxygen more easily into bulk and was less oxidation resistant during the heat treatment than that produced at 0.4 Pa of 40% nitrogen in argon. The hardness after the oxidation treatment was slightly increased by approximately 10%, consistent with reported oxidation resistant properties of this material for mechanical protection applications. As a result of this study, TiN or TiAlN as an element may not be suitable candidates for use as solar selective absorbers in air-stable high temperature applications.     

High energy density lithium ion batteries using Li2.6Co0.4 − xCuxN (anode) and Cu0.04V2O5 (cathode) electrode materials

Li_2.6Co_0.4 - xCu_xN (x = 0, 0.15) anode materials were prepared by conventional solid state reaction. Between both materials, Li_2.6Co_0.25Cu_0.15N exhibited better capacity retention than that of Li_2.6Co_0.4N. According to electrochemical impedance spectroscopy, the better cycling behavior of Li_2.6Co_0.25Cu_0.15N has been attributed to the improvement in interfacial compatibility between the electrode and electrolyte interface. A possible explanation to this was given. Li_2.6Co_0.4 - xCu_xN/Cu_0.04V₂O₅ full-cells were assembled to investigate the reliability of Li_2.6Co_0.4 - xCu_xN anode materials in practical applications. The Li_2.6Co_0.25Cu_0.15N/Cu_0.04V₂O₅ cell delivered a specific capacity of 260 mA h g^− 1, and a specific energy of 505.7 mW h g^− 1, which was much higher than that of C/LiCoO₂ lithium ion batteries.