Significance of Al on the morphological and optical properties of Ti1−xAlxN thin films

TiN and Ti_1−xAl_xN thin films with different aluminum concentrations (x = 0.35, 0.40, 0.55, 0.64 and 0.81) were synthesized by reactive magnetron co-sputtering technique. The structure, surface morphology and optical properties were examined using Grazing Incidence X-ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Raman spectroscopy and spectroscopic ellipsometry, respectively. The structure of the films were found to be of rocksalt type (NaCl) for x = 0.0–0.64 and X-ray amorphous for x = 0.81. AFM topographies show continuous mound like structure for the films of x between 0.0 and 0.64, whereas the film with x = 0.81 showed smooth surface with fine grains. Micro-Raman spectroscopic studies indicate structural phase separation of AlN from TiAlN matrix for x > 0.40. Ti_1−xAl_xN has the tendency for decomposition with the increase of Al concentration whereas c-TiN and hcp-AlN are stable mostly. The optical studies carried out by spectroscopic ellipsometry measurements showed a change from metallic to insulating behavior with the increase in x. These films are found to be an insulator beyond x = 0.81.     

Magnetic properties and microstructures of perpendicular anisotropy (SmCo7/Cu)n films

Pseudobinary SmCo_7 − xCu_x intermetallic compound films with a TbCu₇-type structure were prepared by sputtered (SmCo₇/Cu)_n multilayer. After annealing, the spacer layer Cu (0.5-1.5 nm) diffused into the SmCo₇ matrix and stabilized the SmCo₇ meta-stable phase. The resulting microstructure was investigated by transmission electron microscopy. Perpendicular anisotropy was obtained by introducing a Cu/Ti dual underlayer during sputtering, resulting in prefer-orientated SmCo₇ (00L) X-ray diffraction peaks. This study observes a maze-like domain pattern in perpendicular anisotropy films and finds single- and multi-domain particles in correlated AFM and MFM images.     

Structural, electrical and optical properties of transparent Zn1 − xMgxO nanocomposite thin films

Zn_1 − xMg_xO thin films of various Mg compositions were deposited on quartz substrates using inexpensive ultrasonic spray pyrolysis technique. The influence of varying Mg composition and substrate temperature on structural, electrical and optical properties of Zn_1 − xMg_xO films were systematically investigated. The structural transition from hexagonal to cubic phase has been observed for Mg content greater than 70 mol%. AFM images of the Zn_1 − xMg_xO films (x = 0.3) deposited at optimized substrate temperature clearly reveals the formation of nanorods of hexagonal Zn_1 − xMg_xO. The variation of the cation-anion bond length to Mg content shows that the lattice constant of the hexagonal Zn_1 − xMg_xO decreases with corresponding increase in Mg content, which result in structure gradually deviating from wurtzite structure. The tuning of the band gap was obtained from 3.58 to 6.16 eV with corresponding increase in Mg content. The photoluminescence results also revealed the shift in ultraviolet peak position towards the higher energy side.     

Compositional dependence on the optical properties of amorphous As2 − xS3 − xSbx thin films

In this paper, we report results of the optical properties of thermally deposited As_2 − xS_3 − xSb_x thin films with x = 0.02, 0.07, 0.1 and 0.15. We have characterized the deposited films by Fourier Transform Infrared, Raman and X-ray photoelectron spectroscopy (XPS). The relationship between the structural and optical properties and the compositional variation were investigated. It was found that the optical bandgap decreases with increase in Sb content. The XPS core level spectra show a decrease in As₂S₃ percentage with increase in Sb content. This is confirmed from the shifting of the Raman peak from AsS₃ vibrational mode towards SbS₃ vibrational mode.     

Influence of laser-irradiation on the optical constants Se75S25 − xCdx thin films

Amorphous thin films of glassy alloys of Se₇₅S_25 − xCd_x (x = 2, 4 and 6) were prepared by thermal evaporation onto chemically cleaned glass substrates. Optical absorption and reflection measurements were carried out on as-deposited and laser-irradiated thin films in the wavelength region of 500-1000 nm. Analysis of the optical absorption data shows that the rule of no-direct transitions predominates. The laser-irradiated Se₇₅S_25 − xCd_x films showed an increase in the optical band gap and absorption coefficient with increasing the time of laser-irradiation. The results are interpreted in terms of the change in concentration of localized states due to the shift in Fermi level. The value of refractive index increases decreases with increasing photon energy and also by increasing the time of laser-irradiation. With the large absorption coefficient and change in the optical band gap and refractive index by the influence of laser-irradiation, these materials may be suitable for optical disc application.     

Selection of metal ion irradiation for controlling Ti1−xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering

We demonstrate, for the first time, the growth of metastable single-phase NaCl-structure high-AlN-content Ti_1−xAl_xN alloys (x ≤ 0.64) which simultaneously possess high hardness and low residual stress. The films are grown using a hybrid approach combining high-power pulsed magnetron (HPPMS/HIPIMS) and dc magnetron sputtering of opposing metal targets. With HIPIMS applied to the Al target, Alⁿ⁺ ion irradiation (dominated by Alⁿ⁺) of the growing film results in alloys 0.55 ≤ x ≤ 0.60 which exhibit hardness H ∼ 30 GPa and low stress σ = 0.2-0.7 GPa, tensile. In sharp contrast, films with corresponding AlN concentrations grown with HIPIMS applied to the Ti target, giving rise to Tiⁿ⁺ ion irradiation (with a significant Ti²⁺ component), are two-phase - cubic (Ti,Al)N and hexagonal AlN - with low hardness, H = 18-19 GPa, and high compressive stress ranging up to 2.7 GPa. Annealing alloys grown with HIPIMS applied to the Al target results in age hardening due to spinodal decomposition; the hardness of Ti_0.41Al_0.59N increases from 30 to 33 GPa following a 900 °C anneal.     

Structural and optical properties of rock-salt Cd1 − xZnxO thin films prepared by thermal decomposition of electrodeposited Cd1 − xZnxO2

Cd_1 − xZn_xO nanocrystalline thin films with rock-salt structure were obtained through thermal decomposition of Cd_1 − xZn_xO₂ (x = 0, 0.37, 0.57, 1) thin films which were electrodeposited from aqueous solution at room temperature. X-ray diffraction results showed that the Zn ions were incorporated into rock salt-structure of CdO and the crystal lattice parameters decreased with the increase of Zn contents. The bandgaps of the Cd_1 − xZn_xO thin films were obtained from optical transmission and were 2.40, 2.51, 2.63 and 3.25 eV, respectively.     

Calorimetric and optical study of amorphous Se85 − xTe15Bix glassy alloy

Bulk samples of Se_85 − xTe₁₅Bi_x (where x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained by melt quenching technique. Differential scanning calorimetric (DSC) technique has been applied to determine the thermal properties of Se-rich Se_85 − xTe₁₅Bi_x glassy alloys in the glass transition and crystallization regions at four heating rates (5, 10, 15, 20 K min^− 1). The glass transition temperature (T_g) and peak crystallization temperature(T_p) are found to shift to a higher temperature with increasing heating rate. With Bi addition, the value of (T_g)increases. (T_p) is found to increase as Bi is introduced to the Se-Te host, however further increase in Bi concentration is responsible for the reduction of. Thin film of bulk samples are deposited on glass substrate using thermal evaporation technique under vacuum for optical characterization. Optical band gap is estimated using Tauc's extrapolation and is found to decrease from 1.46 to 1.24 eV with the Bi addition.     

Initial study on the structure and optical properties of Zn1−xFexO films

Zn_1−xFe_xO (x = 0, 0.052, 0.103, 0.157 and 0.212) films were prepared by the radio-frequency magnetron sputtering technique on Si (111) substrates and the microstructure of which was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. The samples had a preferential c-axis orientation and the position of (002) diffraction peak shifted to the lower degree side with increasing Fe component. In order to investigate the optical transmittance properties of Zn_1−xFe_xO films, we prepared the films on Al₂O₃ (001) substrates simultaneity and the UV-VIS optical transmittance spectra showed that the band gap energy of Zn_1−xFe_xO films decreased with increase of Fe concentration. Photoluminescence spectra of the samples were observed at room temperature.     

Effect of Nb substitution on the structural, dielectric and magnetic properties of multiferroic BiFe1−xNbxO3 ceramics

Polycrystalline BiFe_1−xNb_xO₃ ceramics have been synthesized by standard solid-state reaction method. The effect of Nb substitution on the dielectric, magnetic and magnetoelectric properties of the BiFeO₃ multiferroic perovskite was studied. X-ray diffraction pattern revealed that all the samples with x = 0.00-0.10 showed rhombohedral perovskite structure. We obtained single phase upto doping concentration of x = 0.05 and with further increase in Nb concentration, some impurity peaks appeared. An anomaly in the dielectric constant (?) and dielectric loss (tan (δ)) in the vicinity of the antiferromagnetic Néel temperature (T_N) was observed. Nb substitution reduced the antiferromagnetic Néel temperature (T_N) in BiFe_1−xNb_xO₃. Proper amount of Nb could decrease the dielectric loss. Magnetic hysteresis loops measured at 5 K/300 K and temperature dependent magnetization curves indicated ferromagnetism in Nb substituted BiFeO₃ ceramics. The room temperature magnetic moment was found to increase with increase in Nb concentration. The dependence of dielectric constant on the magnetic field is an evidence of magnetoelectric coupling in BiFe_1−xNb_xO₃ ceramics.     

Microstructure and martensitic transformation of Ti49Ni51 − xHfx high temperature shape memory alloys

In present work, the microstructure and martensitic transformation of Ti₄₉Ni_51 − xHf_x (x = 3-15) alloys were studied. The microstructure of Ti₄₉Ni_51 − xHf_x alloys consists of B19′ martensite and (Ti,Hf)₂Ni phase at room temperature. The martensitic transformation behavior is characterized by a single-stage transformation. With increasing Hf content, the transformation temperature increases from 75 to 279 °C resulting from the reduced valence electron concentration, indicating that the replacement of Hf for Ni is effective in increasing the transformation temperatures. The results suggest that the Ti₄₉Ni_51 − xHf_x shape memory alloy is one of potential candidates for high temperature applications.     

Different microstructure and dielectric properties of Ba1−xCaxTiO3 ceramics and pulsed-laser-ablated films

A comparative study of the microstructure and dielectric properties between Ba_1−xCa_xTiO₃ (BCT) ceramics and films were performed in the whole Ca concentration range of x = 0-1. The ceramics were prepared by conventional solid-state reaction technique and the films by the method of pulsed-laser deposition. X-ray diffraction (XRD) study of the BCT ceramics exhibited a pure tetragonal phase for x = 0-0.25, a tetragonal-orthorhombic diphase for x = 0.25-0.85 and a pure orthorhombic phase for x = 0.90-1.00. And the dielectric phase transition temperature from tetragonal to cubic was marginally affected by the Ca doping into BaTiO₃. However, BCT films deposited on Pt/Si/SiO₂/Si substrates showed a different microstructure and dielectric properties. Tetragonal-orthorhombic diphase was not found in the BCT films for x = 0.25-0.85, and a large decrease of the Curie point and diffuse phase transition were observed in the BCT films. Based on the compositional analysis, such phenomena were ascribed to the occupancy of some Ca²⁺ to the Ti⁴⁺ sites in the BCT films.     

Laser-induced amorphization and crystallization on Se80Te20−xPbx thin films

Thin films of glassy alloys of a-Se₈₀Te_20−xPb_x (x=2, 6 and 10) was crystallized in a specially designed sample holder under a vacuum of 10⁻² Pa. The amorphous and crystallized films were induced by pulse laser (wavelength: 337.1 nm, frequency: 10 Hz, pulse duration: 4 ns and pulse energy: 0.963 mJ). After laser irradiation on amorphous and crystalline films: optical band gaps were measured. Crystallization and amorphization of chalcogenide films is accompanied by the change in the optical band gap. The change in optical energy gap could be determined by identification of the transformed phase. This change in the optical band gap may be due to the increase in the grain size and the reduction in the disorder of the system.     

A study of atomic layer deposited LiAlxOy films on Mg-Li alloys

LiAl_xO_y films with thicknesses of 65-200 nm were deposited by the atomic layer deposition (ALD) technique on the LZ101 Mg-Li alloy. The ALD-deposited LiAl_xO_y films exhibit an amorphous structure and have an atomic ratios of Li:Al:O = 1:1:2. The potentio-dynamic polarization tests show that the corrosion resistance of Mg-Li alloys can be significantly improved due to the dense and pinhole-free structure as well as the excellent coverage and conformity of the ALD-deposited LiAl_xO_y films.     

Yttrium-doped effect on thermoelectric properties of La0.1Sr0.9TiO3 ceramics

Ceramic samples of La_0.1Y _x Sr_0.9–x TiO₃ with different yttrium concentration have been synthesized by conventional solid state reaction technique, and their thermoelectric properties have been investigated. X-ray diffraction characterization confirms that the main crystal structure is of perovskite, but with a small amount of second phase of Y₂Ti₂O₇ for samples with x = 0.05, 0.08, and 0.10. SEM images indicate all ceramic samples are dense and compact, and the largest grain size appears in sample with x = 0.03 and 0.05. Also the second phase can also be identified from the SEM images for x = 0.05, 0.08, and 0.10 samples. Electrical conductivity and Seebeck coefficient of samples have been measured in the temperature range between 300 and 1100 K. With increasing of yttrium concentration, electrical resistivity decreases, and reaches 0.8 mΩ cm for x = 0.10 sample at room temperature. The absolute Seebeck coefficients increase monotonically with increasing temperature in the whole temperature range. Sample with x = 0.03 exhibits the highest absolute Seebeck coefficient 219 μV K⁻¹ at 1059 K, as well as the maximum power factor 11 μW cm⁻¹ K⁻² at 624 K.     

Effect of annealing temperature on the tribological behavior of ZnO films prepared by sol-gel method

The tribological behavior of zinc oxide (ZnO) films grown on glass and silicon (100) substrates by sol-gel method was investigated. Particularly, the as-coated films were post-annealed at different temperatures in air to investigate the effect of annealing temperature. Crystal structural and surface morphology of the films were measured by X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). XRD patterns and AFM images indicated that the crystallinity and grain size of the films were enhanced and increased, respectively, with temperature. The tribological behavior of films was evaluated by sliding the ZnO films against a Si₃N₄ ball under 0.5 gf normal load using a reciprocating pin-on-plate tribo-tester. The wear tracks of the films were measured by AFM to quantify the wear resistance of the films. The results showed that the wear resistance of the films could be improved by the annealing process. The wear resistance of the films generally increased with annealing temperature. Specifically, the wear resistance of the films was significantly improved when the annealing temperature was higher than 550° C. The increase in the wear resistance is attributed to the increase in hardness and modulus of the film with annealing temperature.     

Structural properties of thin Bi1−xSbx alloy films

Measurements of the structural properties of thin films of Bi_1?xSb_x alloy using an electron microscope and X-ray diffractometer were performed. The change in the lattice parameter of the alloy depending on the Sb concentration was established to be in agreement with Vegard's law. The existence of texture in thin films of Bi_1?xSb_x alloy was also confirmed. The dependence of the linear dimension of the average size of the crystallites on the antimony concentration was investigated.     

Reactively sputtered GaAsxN1−x thin films

Thin films of GaAs_xN_1−x alloys were deposited by reactive rf magnetron sputtering of GaAs target with a mixture of argon and nitrogen as the sputtering gas. Growth rate was found to decrease from ∼ 7 μm/h to ∼ 2 μm/h as the nitrogen content increased from 0% to 40%. XRD and TEM studies of the films reveal the presence of hexagonal GaN with a significant increase of the lattice parameters in a narrow range of composition of the sputtering gas (5-10% nitrogen), which is attributed to the incorporation of arsenic. The limited availability of nitrogen in the sputtering atmosphere is found to encourage the incorporation of arsenic in the alloy films. Optical absorption coefficient spectra of the films were obtained from reflection and transmission data. The effect of arsenic incorporation is seen in the optical absorption spectra of the films, which show a continuous shift of the absorption edge to lower energies with respect to that of gallium nitride.     

Mössbauer and magnetic studies of Mg1+2xSbxFe2−3xO4 spinel ferrites

Spinel-related Mg_1+2xSb_xFe_2−3xO₄ samples (x = 0.0, 0.05, 0.10, 0.15, 0.20, and 0.30) prepared using the conventional double sintering technique were investigated using ⁵⁷Fe Mössbauer spectroscopy and magnetic measurements. Mössbauer spectra favor a cationic distribution of the form (Mg_δFe_1−δ)^A[Mg_1+2x−δSb_xFe_1+δ−3x]^BO₄ among the tetrahedral-A and octahedral-B sites of the spinel structure. The cation distribution parameter (δ) was found to vary with the Sb⁵⁺ concentration (x). The Mössbauer hyperfine magnetic fields at both sites and the Curie temperatures of the ferrites decrease as x increases. This was attributed to gradual weakening in the magnetic exchange interaction as more Fe³⁺ ions are substituted by diamagnetic Sb⁵⁺ and Mg²⁺ ones. The sample with x = 0.30 exhibits short range magnetic order due to cationic clustering and/or superparamagnetism. The magnetization of all samples was found to be temperature-dependent implying that δ depends on temperature in addition to x. At low temperatures the substituted ferrites (x ≠ 0.0) unexpectedly exhibit higher magnetization values relative to that of the pure ferrite MgFe₂O₄. This behavior, while at variance with the Néel's model for ferrimagnetism, is explicable in terms of the spin canting mechanism proposed in the Yafet–Kittel model.     

Compositional effects on the optical properties of Gex Sb40−x Se60 thin films

Ge_x Sb_40−x Se₆₀ (x = 0, 2.42 and 23.41 at.%) thin chalcogenide films were deposited on glass and quartz substrates by the conventional thermal evaporation technique at 300 K. The chemical composition of the bulk material and as-deposited films were determined by energy dispersive analysis X-ray spectrometry (EDAX). X-ray diffraction pattern (XRD) of Ge_x Sb_40−x Se₆₀ (x = 0, 2.42 and 23.41 at.%) thin films indicates that they have amorphous structure. The optical transmission and reflection spectra were measured in the range of 500 to 2500 nm. The optical absorption coefficient spectra were studied for deposited samples. It is observed that the optical absorption edge shift to higher energy range, as the germanium content, x, increases in the film. The type of electronic transition, responsible for the optical properties, is indirect allowed transition. It is found that the optical band gap increases as the Ge content increases.The average coordination number (N_c) in Ge_x Sb_40−x Se₆₀ films increases, but the number of chalcogenide atoms remains constant. The number of Ge - Se bonds and the average bond energy of the system increase with the increase of the average coordination number. The optical band gap, E_g, increases with the increase of the average coordination number, (N_c). Also the energy gap, E₀₄, is discussed in terms of its relation to the chemical composition. The dispersion of the refractive index (n) is discussed in terms of the Single Oscillator Model (SOM) (Wimple - Didomenico model). The single oscillator energy (E₀), the dispersion energy (E_d) and the optical dielectric constant (?_∞) are also estimated.